Methods and compounds for making coatings, waveguides and other optical devices

Abstract

A method comprises reacting a compound of the general formula R14-mMOR3m wherein m is an integer from 2 to 4, R1 is selected from alkyl, alkenyl, aryl, alkynyl or epoxy, and wherein R1 is nonfluorinated, or fully or partially fluorinated; OR3 is alkoxy; and M is an element selected from group 14 of the periodic table; with a compound of the general formula R2M1 wherein R2 is selected from alkyl, alkenyl, aryl, alkynyl or epoxy, and wherein R2 is at least partially fluorinated; and M1 is an element from group I of the periodic table; so as to make a compound of the general formula R14-mMOR3m-1R2. A similar method of the invention comprises reacting a compound of the general formula R14-mMOR3m-nXn wherein m is an integer from 2 to 4, and n is an integer from 0 to 3 and is not greater than m; R1 is selected from alkyl, alkenyl, aryl, alkynyl or epoxy, and wherein R1 is nonfluorinated, or fully or partially fluorinated; OR3 is alkoxy; X is a halogen; and M is an element selected from group 14 of the periodic table; with a compound of the general formula R2M1, wherein R2 is selected from alkyl alkenyl, aryl, alkynyl or epoxy, and wherein R2 is at least partially fluorinated; and M1 is an element from group I of the periodic table; so as to make a compound of the general formula R2MR14-mOR3m-nXn-1. These compounds thus formed can be further reacted to attach an additional Rx group, or hydrolyzed, alone or with one or more similar compounds, to form a material having a molecular weight of from 500 to 10,000, which material can be deposited on various substrates as a coating or deposited and patterned for a waveguide or other optical device components.

Description

BACKGROUND OF THE INVENTION

[0001] Growing internet and data communications are resulting in the need for greater numbers and types of optical components within expanding optical networks. DWDM systems, or any system that utilizes light to transmit information, utilize a variety of components for creating, transmitting, manipulating and detecting light. Such optical device components, also referred to as optoelectronic or photonic components, often comprises at least a portion that is transmissive to light at particular wavelengths. Fibers and planar light guides are examples of passive light transmissive optical components within an optical network. However, light manipulators (components that modify, filter, amplify, etc. light within the optical network) also often have portions that are transmissive to light, as often do photodetectors and light emittors.

[0002] Regardless of the type of optical device component, it is usually desirable that a material is used that is highly transmissive to the wavelengths used to transmit information through the optical network. In addition to low optical absorbance, the material should preferably have low polarization dependent loss and have low birefringence and anisotropy, and low stress. It is also desirable that the material be easy to deposit or form, preferably at a high deposition rate and at a relatively low temperature. Once deposited or formed, it is desirable that the material can be easily patterned, preferably directly patterned without the need for photoresist and etching steps, and preferably patterned with small feature sizes if needed. Once patterned, the material should preferably have low surface and/or sidewall roughness. The material should also preferably be hydrophobic to avoid uptake of moisture once installed and in use, and be stable with a relatively high glass transition temperature (not degrade or otherwise physically and/or chemically change upon further processing or when in use).

[0003] Often, current materials used for making optical device components have some, but not all, of these characteristics. For example, inorganic materials such as silica are relatively stable, have relatively high glass transition temperatures have relatively low optical loss. However, silica materials often require higher deposition temperatures (limiting substrates and components on the substrates) and have lower deposition rates and cannot be directly patterned. Organic materials such as polymers can be deposited at lower temperatures and at higher deposition rates, but are relatively unstable and have lower glass transition temperatures. What are needed are materials for optical device components that have a larger number of the preferred characteristics set forth above.

SUMMARY OF THE INVENTION

[0004] A method comprises reacting a compound of the general formula R14-mMOR3m wherein m is an integer from 2 to 4, R1 is selected from alkyl alkenyl, aryl, alkynyl or epoxy, and wherein R1 is nonfluorinated, or fully or partially fluorinated; OR3 is alkoxy; and M is an element selected from group 14 of the periodic table; with a compound of the general formula R2M1 wherein R2 is selected from alkyl, alkenyl, aryl, alkynyl or epoxy, and wherein R2 is at least partially fluorinated; and M1 is an element from group I of the periodic table; so as to make a compound of the general formula R14-mMOR3m-1R2.

[0005] A similar method of the invention comprises reacting a compound of the general formula R14-mMOR3m-nXn wherein m is an integer from 2 to 4, and n is an integer from 0 to 3 and is not greater than m; R1 is selected from alkyl, alkenyl, aryl, alkynyl or epoxy, and wherein R1 is nonfluorinated, or fully or partially fluorinated; OR3 is alkoxy; X is a halogen; and M is an element selected from group 14 of the periodic table; with a compound of the general formula R2M1, wherein R2 is selected from alkyl alkenyl, aryl, alkynyl or epoxy, and wherein R2 is at least partially fluorinated; and M1 is an element from group I of the periodic table; so as to make a compound of the general formula R2MR14-mOR3m-nXn-1. These compounds thus formed can be further reacted to attach an additional Rx group, or hydrolyzed, alone or with one or more similar compounds, to form a material having a molecular weight of from 500 to 10,000, which material can be deposited on various substrates as a coating or deposited and patterned for a waveguide or other optical device components.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0006] Compounds:

[0007] In the present invention, compounds are made that can be hydrolyzed and condensed (alone or with one or more other compounds) into a material having a molecular weight of from 500 to 10,000 (preferably from 1,000 to 3,000), which material can be deposited by spin-on, spray coating, dip coating, or the like. Such compounds are preferably partially or fully fluorinated, though not necessarily so in all embodiments. The compounds will preferably have an element M selected from groups 3-6 or 13-16 of the periodic table, which element is preferably tri-, tetra- or penta-valent, and more preferably tetravalent, such as those elements selected from group 14 of the periodic table. Connected to this element M are from three to five substituents, wherein from one to three of these substituents are organic groups to be discussed further below, with the remainder being a halogen or an alkoxy group.

[0008] Compound Example I:

[0009] In one embodiment of the invention, a compound is provided of the general formula: R1MOR33, where R1 is any partially or fully fluorinated organic group (preferably a partially or fully fluorinated aryl, alkenyl, alkynyl or alkyl group), where M is an element selected from column 14 of the periodic table, and where OR3 is an alkoxy group—except where M is Si, R1 is perfluorinated phenyl or perfluorinated vinyl, and OR3 is ethoxy, which, though not novel per se, can be part of one of the novel methods of the invention as will be discussed further below. R1 can have an inorganic component, though if so, a portion should preferably be a partially or fully fluorinated organic component. In a more preferred example of this embodiment, R1 comprises a double bond that is capable of physical alteration or degradation in the presence of an electron beam, or electromagnetic radiation and a photo initiator (or sensitizer, photoacid or thermal initiator—to be discussed further below). In this example, R1 could be an alkenyl group such as a vinyl group, or could be an epoxy or acrylate group, that is preferably partially or fully fluorinated. Such a group, as will be discussed further herein, can allow for crosslinking upon application of an electron beam or preferably electromagnetic radiation (e.g. directing ultraviolet light through a mask with the material comprising a photoinitiator). In the alternative, R1 could be an organic group that is (or a hybrid organic-inorganic group that comprises) a single or multi ring structure (an “aryl group”) or an alkyl group of any length, such as from 1 to 14 carbon atoms or longer (preferably 4-10)—the alkyl group capable of being a straight or branched chain. If R1 is a ring structure, or a carbon chain of sufficient length (e.g. 4 (or 5) or more carbons), then such an R1 group can provide bulk to the final material once hydrolyzed, condensed and deposited on a substrate. If R1 is a ring structure, whether single ring or multi ring, it can have substituents thereon, fluorinated, though not necessarily, such as alkyl or alkenyl substituents (preferably from 1 to 5 carbons), and where the substituents on the ring structure can be at from 1 to 3 locations around the ring. R1 can be a 4 to 8 sided ring structure (preferably 5 or 6 sided) which ring structure could comprise N or 0. R1 could comprise nitrogen, or R1 can also have an oxygen component, such as a carboxylate group (e.g. acrylate, butenecarboxylate, propenecarboxylate, etc.).

[0010] In the example above, in R1MOR33, M can be a tetravalent element from column 14 of the periodic table (e.g. Si or Ge), or a tetravalent element from column 16—e.g. Se (or a tetravalent early transition metal—such as titanium or zirconium). Also, OR3 is an alkoxy group, though preferably one having from 1 to 4 carbon atoms (longer alkoxy groups can be used, but are more expensive). Specific examples include: 12

[0011] Compound Example II:

[0012] In yet another embodiment of the invention, a compound is provided of the general formula: R1MOR32X, where R1 is any partially or fully fluorinated organic group (preferably a partially or fully fluorinated aryl, alkenyl, alkynyl or alkyl group) as set forth above, where M is an element selected from group 14 of the periodic table as mentioned above, where X is a halogen, and where OR3 is an alkoxy group as above. X in this example is preferably F, Cl, Br or I, and more preferably Cl or Br. Specific examples of compounds within this category include 34

[0013] Compound Example III

[0014] In another embodiment of the invention, a compound is provided of the general formula: R1MX2OR3, where R1 is any partially or fully fluorinated organic group (preferably a partially or fully fluorinated aryl, alkenyl, alkynyl or alkyl group) as set forth above, where M is an element selected from group 14 of the periodic table as mentioned above, where OR3 is an alkoxy group as above, and where X is a halogen as above—Except where M is Si R1 is perfluorinated phenyl, X is Cl, and OR3 is ethoxy, which, though not novel per se, is novel when used as part of the methods of the invention as will be discussed further below. Specific examples within this category include 5

[0015] Compound Example IV:

[0016] In a further embodiment of the invention, a compound is provided of the general formula: R1MX3, where R1 is any partially or fully fluorinated organic group (preferably a partially or filly fluorinated aryl, alkenyl, alkynyl or alkyl group) as set forth above, where M is an element selected from group 14 of the periodic table as mentioned above, and where X is a halogen as above—Except where M is Si, R1 is perfluorinated phenyl, perfluorinated methyl or perfluorinated vinyl, and X is Cl, which, though not novel per se, are novel when used as part of the methods of the invention as will be discussed further below. (f M is Si and X is Cl, some of these novel trichlorosilanes could be used for forming self assembled monolayers for making a surface hydrophobic, preferably by application in the vapor phase to a surface made of silicon and having OH end groups and moisture.) Specific examples within this category include 67

[0017] Compound Example V:

[0018] In yet another embodiment of the invention, a compound is provided of the general formula: R1R2MOR32, where R1 is any partially or fully fluorinated organic group (preferably a partially or fully fluorinated aryl, alkenyl, alkynyl or alkyl group) as set forth above with respect to R1, R2 is any partially or fully fluorinated organic group (preferably a partially or fully fluorinated aryl alkenyl, alkynyl or alkyl group) as set forth above with respect to R1, or any such organic groups nonfluorinated, and where R1 and R2 are the same or different from each other, where M is an element selected from group 14 of the periodic table as mentioned above, and where OR3 is an alkoxy group as above—except where M is Si, OR3 is ethoxy and R1 and R2 are perfluorinated phenyl groups, which compound is not novel per se, but is novel when used as part of the methods of the invention as set forth below. Specific examples within this category include: 8910

[0019] Compound Example VI:

[0020] In another embodiment of the invention, a compound is provided of the general formula: R1R2MOR32, where R1 is any partially or fully fluorinated organic group (preferably a partially or fully fluorinated aryl, alkenyl, alkynyl or alkyl group) as set forth above with respect to R1, R2 is any partially or fully fluorinated organic group (preferably a partially or fully fluorinated aryl alkenyl, alkynyl or alkyl group) as set forth above with respect to R1, or any such organic groups nonfluorinated, and where R1 and R2 are the same or different from each other, where M is an element selected from group 14 of the periodic table as mentioned above, and where OR3 is an alkoxy group as above, and where X is a halogen. R1 and R2 can be the same or different from each other. Specific examples within this category include: 1112

[0021] Compound Example VII:

[0022] In a further embodiment of the invention, a compound is provided of the general formula: R1 R2MX2, where R1 is any partially or fully fluorinated organic group (preferably a partially or fully fluorinated aryl, alkenyl, alkynyl or alkyl group) as set forth above with respect to R1, R2 is any partially or fully fluorinated organic group (preferably a partially or fully fluorinated aryl, alkenyl, alkynyl or alkyl group) as set forth above with respect to R1, or any such organic groups nonfluorinated, and where R1 and R2 are the same or different from each other, where M is an element selected from group 14 of the periodic table as mentioned above, and where X is a halogen as above—Except where M is Si, R1 and R2 are perfluorinated phenyl, and X is Cl, which, though not novel per se, is novel when used as part of the methods of the invention as will be discussed further below. Specific examples within this category include: 1314

[0023] As Compounds V-VII have two organic groups, they can be formed by various combinations of Methods A, B and/or C (described in further detail below).

[0024] Compound VIII:

[0025] In a further embodiment of the invention, a compound is provided of the general formula: R1R2 R3MOR3, where R1, R2 and R3 are independently an aryl, alkenyl, alkynyl or alkyl group) as set forth above with respect to R1 and R2, and where R1, R2 and R3 can each be the same or different from each other (and preferably at least one of where R1, R2 and R3 is partially or fully fluorinated), where M is preferably an element selected from group 14 of the periodic table as above, and where OR3 is an alkoxy group as above. One example is 15

[0026] though the organic groups need not each be the same as in this example, and need not each be fluorinated (though preferably at least one of the organic groups is fluorinated).

[0027] Compound IX:

[0028] In another embodiment of the invention, a compound is provided of the general formula: R1R2 R3MX, where R1, R2 and R3 are independently an aryl, alkenyl, alkynyl or alkyl group) as set forth above with respect to R1 and R2, and where R1, R2 and R3 can each be the same or different from each other (and preferably at least one of where R1, R2 and R3 is partially or fully fluorinated), where M is preferably an element selected from group 14 of the periodic table as above, and where X is a halogen as above. One example is: 16

[0029] As Compounds VIII and IX have three organic groups, they can be formed by various combinations of Methods A, B and/or C (which methods are described in further detail below).

[0030] Other Compounds:

[0031] Additional compounds within the scope of the invention include those having the general formula R1MHX2 where R1, M and X are as above and H is hydrogen. One example is: 17

[0032] Other examples, where the fluorinated phenyl group is replaced with a substituted phenyl, fluorinated alkyl vinyl, etc. are possible.

[0033] It should be noted that M in the compound formula examples above need not be tetravalent, M can also have other valencies, though preferably tri- or penta-valent. Examples would include early transition metals in group 3 or 5 of the periodic table (e.g. Y, V or Ta), or elements in columns 13 (column headed by B) or 15 (column headed by N), such as B, Al or As. In such situations, the compounds above would have one fewer or one additional alkoxy (OR3), halogen (X) or an organic group (R1 or R2 independently from the other organic group(s)). Examples include R1MOR3X, R1MOR32, R1MX2, R1R2MX, R1R2MOR3, where M is a trivalent early transition metal (or similar examples with five substituents selected from R1 and/or R2 groups, as well as alkoxy and halogen groups for pentavalent elements (including metalloids or transition metals). Such compounds could have the formula R13-mMOR3m, R15-mMOR3m, R2R14-mMOR3m or R2R14-mMOR3m. If such tri- or penta-valent elements are used, such a compound would preferably be hydrolyzed and condensed as a dopant, rather than as the main portion of the material at the time of hydrolysis and condensation (likewise with non-silicon tetravalent elements that form compounds in accordance with the tetravalent examples above, such as germanium compounds).

[0034] It should also be noted that the structures illustrated above are exemplary only, as other ring structures (3 sided—e.g. epoxy, or 4 to 8 sided—preferably 5 or 6 sided) are possible, which structures can include nitrogen or oxygen in or bound the ring. The aryl group can have from 1 to 3 substitutents, such as one or more methyl, ethyl, ally, vinyl or other substituents—that can be fluorinated or not. Also, carbon chain R groups can include oxygen (e.g. carboxylate) or nitrogen, or sulpher. If an alkyl group is bound to the silicon (or other M group), it can have from 1 to 4 carbons (e.g. a C2+ straight or C3+ branched chain), or up to 14 carbons (or more)—if used as a bulk enhancing group for later hydrolysis and deposition, 4 or more carbons are preferable. These aryl groups can be fully or partially fluorinated, as can alkenyl or alkynyl groups if used.

[0035] Methods of Making the Compounds for Later Hydrolysis and Condensation:

[0036] In a number of the following examples of methods within the scope of the present invention, “M” is silicon, OR3 is ethoxy, and X is CL. However, as noted above, other alkoxy groups could easily be used (methoxy, propoxy, etc.), and other group 3-5 or 13-16 elements could be used in place of silicon and other halogens in place of chlorine. Starting materials can vary from tetraethoxy silane, to ethoxy silanes having one or more organic groups bound to the silicon, to chorosilanes having one or more chlorine groups and/or one or more organic groups, as well as starting materials having chlorine and alkoxy groups and with one or more organic groups. Any compound examples within Compounds I-IX above could be used as starting materials—or could be intermediate or final compounds as will be seen below. For example, trifluorovinyltriethoxysilane could be a final compound resulting from reacting a particular trifluorovinyl compound with tetraethoxysilane, or trifluorovinylsilane could be a starting material that, when reacted with a particular pentafluorophenyl compound, results in pentafluorophenyltrifluorovinyldiethoxysilane. As mentioned above, it is also preferred that any organic groups that are part of the starting material or are “added” by chemical reaction to become part of the compound as set forth below, are partially or fully fluorinated (or fully or partially deuterated), though such is not necessary as will also be seen below.

[0037] One example of a method of the present invention comprises providing a compound R14-q MOR3q where M is selected from group 14 of the periodic table, OR3 is an alkoxy group, R1 is an alkyl, alkenyl, aryl or alkynyl, and q is from 2 to 4; reacting the compound R14-q MOR3q with either a) Mg and R2X2 where X2 is Cl, Br or I and R2 is an alkyl alkenyl, aryl or alkynyl group, or b) reacting with R2X1 where R2 is an alkyl alkenyl, aryl or alkynyl group and wherein R2 is fully or partially fluorinated or deuterated and X1 is an element from group 1 of the periodic table; so as to replace one of the OR3 groups in R14-q MOR3q so as to form R14-q R2MOR3q-1.

[0038] The starting material preferably has 1 or 2 (or no) organic groups (R1) bound to the group 14 element “M”, which organic groups may or may not comprise fluorine, with the remaining groups bound to M being alkoxy groups. An additional preferably fluorinated (partially of fully) organic group becomes bound to the group 14 element by one of a number of reactions. One method (Method A) involves reacting the starting material with magnesium and a compound having the desired organic group (R2) bound to a halogen X2 (preferably Cl, Br or I)—namely R2 X2, which reaction replaces one of the alkoxy groups with the organic group R2. In the above example, a single alkoxy group is replaced, however, depending upon the molar ratios of starting material to R2X2 and Mg, more than one alkoxy group can be replaced with an R2 organic group. In one example of the above, a tetraethoxysilane, MOR34 is reacted with a compound R2X2 where R2 is a preferably fluorinated alkyl, aryl, alkenyl or alkynyl group and X2 is preferably Br or I, so as to form R2MOR33. In another example, R1MOR33 is reacted with R2X2 so as to form R1R2MOR32. This group of reactions can be referred to as: reacting the starting material R14-q MOR3q with R2X2 where R2 is a preferably fluorinated alkyl, aryl, alkenyl or alkynyl group and X2 is preferably Br or I, so as to form R14-q R2MOR3q-1.

[0039] This method A can be described as a method comprising reacting a compound of the general formula R14-mMOR3m, wherein m is an integer from 2 to 4, OR3 is an alkoxy, and M is an element selected from group 14 of the periodic table; with a compound of the general formula R2X2+Mg, wherein X2 is Br or I, where R1 and R2 are independently selected from alkyl, alkenyl, aryl or alkynyl, and wherein at least one of R1 and R2 is partially or fully fluorinated, so as to make a compound of the general formula R2MR13-nOR3n, wherein n is an integer from 1 to 3.

[0040] An alternate to the above method (Method B) is to react the same starting materials (R14-q MOR3q) with a compound R2X1 where, as above, R2 is an alkyl, alkenyl, aryl or alkynyl group and wherein R2 is fully or partially fluorinated or deuterated and X1 is an element from group 1 of the periodic table; so as to replace an OR3 group in R14-q MOR3q to form R14-q R2MOR3q-1. In this example, X1 is an element from group 1 of the periodic table, and is preferably Na, Li or K (more preferably Na or Li). In one example of the above, a tetraethoxysilane, MOR34 is reacted with a compound R2X1 where R2 is a preferably fluorinated alkyl, aryl, alkenyl or alkynyl group and X1 is preferably an element from group I of the periodic table, so as to form R2MOR33 In another example, R1MOR33 is reacted with R2X1 so as to form R1R2MOR32.

[0041] This method B can be described as a method comprising reacting a compound of the general formula R14-mMOR3m wherein m is an integer from 2 to 4, R1 is selected from alkyl alkenyl, aryl, or alkyl alkenyl or aryl, and wherein R1 is nonfluorinated, or fully or partially fluorinated, OR3 is alkoxy, and M is an element selected from group 14 of the periodic table; with a compound of the general formula R2M1, wherein R2 is selected from alkyl, alkenyl, aryl, alkynyl, and wherein R2 is at least partially fluorinated; and M1 is an element from group I of the periodic table; so as to make a compound of the general formula R14-mMOR3m-1R2.

[0042] A modification Method C) of the aforementioned (Method B), is to react the starting material (R14-q MOR3q) with a halogen or halogen compound so as to replace one or more of the OR3 groups with a halogen group due to reaction with the halogen or halogen compound. The halogen or halogen compound can be any suitable material such as hydrobromic acid, thionylbromide, hydrochloric acid, chlorine, bromine, thionylchloride or sumiryichloride and the like. Depending upon the ratio of halogen or halogen compound to starting material (and other parameters such as reaction time and/or temperature), one or more alkoxy groups can be replaced by a halogen group—though in most examples, a single alkoxy group or all alkoxy groups will be replaced. If a single alkoxy group is replaced, then the starting material R14-q MOR3q becomes R14-q MOR3q. 1X3 where X3 is a halogen from the halogen or halogen compound reacted with the starting material (or simply begin with starting material R14-q MOR3q-1X3). If all alkoxy groups are replaced due to the reaction with the halogen or halogen compound, then the starting material R14-q MOR3q becomes R14-q MX3q. Then, as mentioned for Method B above, either starting material R14-q MOR3q-1X3 or R14-q MX3q is reacted with a compound R2X1 where R2 is a preferably fluorinated alkyl aryl, alkenyl or alkynyl group and X1 is preferably an element from group I of the periodic table, so as to form R14-q R2MOR3q-1, R14-qR2MX3q-1 (or even R14-qR22MX3q-2 depending upon reaction conditions). A reaction with R14-qMOR3q-1X3 is preferred due to greater ease of control of the reaction.

[0043] This Method C can be described as a method comprising reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is an element selected from group 14 of the periodic table, and OR3 is alkoxy; with a compound of the general formula R1 M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33.

[0044] Related Methods B and C can be described as a single method comprising reacting a compound of the general formula R14-mMOR3m-nXn wherein m is an integer from 2 to 4, and n is an integer from 0 to 2, R1 is selected from alkyl alkenyl, aryl, or alkyl alkenyl or aryl, and wherein R1 is nonfluorinated, or fully or partially fluorinated; OR3 is alkoxy, and M is an element selected from group 14 of the periodic table; with a compound of the general formula R2M1, wherein R2 is selected from alkyl, alkenyl, aryl, alkynyl, and wherein R2 is at least partially fluorinated, and M1 is an element from group I of the periodic table; so as to make a compound of the general formula R2MR14-mOR3m-nXn-1.

[0045] Of course, as will be seen below, the above starting materials in the method examples set forth above are only examples, as many other starting materials could be used. For example, the starting material could be a halide rather than an alkoxy (e.g. a mono-, di- or trichlorosilanes) or another material having both alkoxy and halogen groups on the group 14 element, along with 0, 1 or even 2 organic groups (alkyl alkenyl, aryl, alkynyl) also bound to the group 14 element. Though the methods of the invention preferably use starting materials having the group 14 element set forth above, many different combinations of alkoxy groups, halogen groups, and organic groups (alkyl, alkenyl, . . . etc.) can be bound to the group 14 element. And, of course, such starting materials can be commercially available starting materials or can be made from other available starting materials (in which case such materials are intermediate compounds in the methods of the invention).

[0046] In addition, the methods of the invention include, it is within the scope of the invention, that a method for forming a final compound could include Methods A, B and/or C above. For example, one organic group, preferably fluorinated, could become bound to the group 14 element M by Method A followed by binding a second organic group, preferably fluorinated, to the group 14 element M by Method B. Or, Method B could be performed first, followed by Method A—or Method C could be performed in combination with Methods A and/or B, etc. And, of course, any particular reaction (binding of an organic group to M1 could be performed only once by a particular reaction, or multiple times (binding of multiple organic groups, the same or different from each other) by repeating the same reaction (a, b or c) multiple times. Many combinations of these various reactions and starting materials are possible. Furthermore, any of the methods or method combinations could include any of a number of additional steps including preparation of the starting material, replacing one or more alkoxy groups of the final compound with halogens, purifying the final compound, hydrolysis and condensation of the final compound (as will be described further below), etc.

EXAMPLE 1

[0047] (making a Compound I via Method B):

CF2═CF—Cl+sec/tert-BuLi→CF2═CF—Li+BuCl

CF2═CF—Li+Si(OEt)4→CF2═CF—Si(OEt)3+EtOLi

[0048] 200 ml of freshly distilled dry Et2O is added to a 500 ml vessel (under an argon atmosphere). The vessel is cooled down to −80° C. and 15 g (0.129 mol) of CF2═CFCl gas is bubbled to Et2O. 100 ml (0.13 mol) of sec-BuLi is added dropwise during three hours. The temperature of the solution is kept below −60° C. all the time. The solution is stirred for 15 minutes and 29 ml (27.08 g, 0.130 mol) of Si(OEt)4 is added in small portions. The solution is stirred for over night allowing it to warm up to room temperature. Formed red solution is filtered and evaporated to dryness to result crude trifluorovinyltriethoxysilane, CF2═CFSi(OEt)3. 18

EXAMPLE 2

[0049] (making a Compound I via Method C):

CF2═CF—Li+ClSi(OEt)3→CF2═CF—Si(OEt)3+LiCl

[0050] CF2═CFSi(OEt)3 is also formed when 30.80 g (0.155 mol) ClSi(OEt)3 in Et2O is slowly added to solution of CF2═CF—Li (0.155 mol, 13.633g, prepared in situ) in Et2O at −78° C. Reaction mixture is stirred overnight allowing it slowly warm to room temperature. LiCl is removed by filtration and solution evaporated to dryness to result yellow liquid, crude trifluorovinyltriethoxysilane,

EXAMPLE 3

[0051] (making a Compound IV via Method B or C):

[0052] Follow steps in Example 1 or 2 above, followed by

CF2═CF—Si(OEt)3+excess SOCl2+py.HCl→CF2═CF—SiCl3+3 SO2+3 EtCl

[0053] 24.4 g (0.100 mol) crude trifluorovinyltriethoxysilane, 44 mL (0.60 mol, 71.4 g) thionylchloride and 1.1 g (0.0045 mol) pyridinium hydrochloride are refluxed and stirred for 24 h. Excess of SOCl2 is evaporated and trifluorovinyltriethoxysilane 19

[0054] is purified by distillation.

EXAMPLE 4

[0055] (making a Compound I via Method A):

C7F7Br+Mg+excess Si(OEt)4→C7F7Si(OEt)3

[0056] 250 g (0.8418 mol) heptafluorobromotoluene, 22.69 g (0.933 mol) magnesium powder, small amount of iodine (15 crystals) and 750 mL (3.3672 mol, 701.49 g) tetraethoxysilane are mixed together at room temperature and diethylether is added dropwise to the vigorously stirred solution until an exothermic reaction is observed (˜250 mL). After stirring at room temperature for 16 h diethylether is evaporated. An excess of n-heptane (˜600 mL) is added to precipitate the magnesium salts. Solution is filtrated and evaporated to dryness. The residue is fractionally distilled under reduced pressure to yield heptafluorotoluene-triethoxysilane. 20

EXAMPLE 5

[0057] (making a Compound IV via Method A):

[0058] Follow the steps in Example 4, followed by

C7F7Si(OEt)3+6 SOCl2+py.HCl→C7F7SiCl3   2.

[0059] where 114.1 g (0.300 mol) heptafluorotoluenetriethoxysilane, 131 mL (1.800 mol, 214.1 g) thionylchloride and 4.51 g (0.039 mol) pyridinium hydrochloride are refluxed and stirred for 16 h. Excess of SOCl2 is evaporated and perfluorotoluenetrichlorosilane 21

[0060] isolated by vacuum-distillation.

EXAMPLE 6

[0061] (making a Compound III via Method A):

[0062] Follow same steps as in Example 5, except isolate (by vacuum distillation at the end), perfluorotoluenedichloroethoxysilane, CF3—C6F4—Si(OEt)Cl2 22

EXAMPLE 7

[0063] (making a Compound V from a Compound I or II via Method C):

C6F5Si(OEt)3+SOCl2+py-HCl→C6F5Si(OEt)2Cl+EtCl  1.

C6F5Si(OEt)2Cl+CF2═CFLi→C6F5(CF2═CF)Si(OEt)2  2.

C6F5(CF2═CF)Si(OEt)2+excess SOCl2+py-HCl→C6F5(CF2═CF)SiCl2  3.

[0064] 152.0 g (0.460 mol) pentafluorophenyl triethoxysilane, 34 mL (0.460 mol. 54.724 g) thionylchloride and 6.910 g (0.0598 mol) pyridinium hydrochloride are refluxed and stirred for 18 h. Pyridinium hydrochloride is precipitated at −78° C. and the solution is filtrated. Pentafluorophenylchlorodiethoxysilane 23

[0065] is isolated by vacuum distillation.

[0066] Then 49.712 g (0.155 mnol) pentafluorophenylchlorodiethoxysilane, C6F5SiCl(OEt)2, in Et2O is slowly added to solution of CF2═CF—Li (0. 155 mol, 13.633g, prepared in situ) in Et2O at −78° C. Reaction mixture is stirred overnight while it will slowly warm to room temperature. LiCl is removed by filtration and the product, pentafluorophenyltrifluorovinyldiethoxysilane, 24

[0067] purified by distillation.

EXAMPLE 8

[0068] (making a Compound VII from a Compound I or II via Method C):

[0069] Follow the steps above for Example 7, and then

[0070] 12.1 g (0.0328 mol) pentafluorophenyltrifluorovinyldiethoxysilane, 12 mL (0.1638 nmol. 19.487 g) thionylchloride and 0.50 g (0.0043 mol) pyridinium hydrochloride are refluxed and stirred for 24 h. Excess of SOCl2 is evaporated and residue is fractionally distilled under reduced pressure to yield a mixture of 80 % pentafluorophenyltrifluorovinyldiethoxysilane. 25

EXAMPLE 9

[0071] (making a Compound I via Method A):

C6F5Br+Mg+2 Ge(OEt)4→C6F5Ge(OEt)3

[0072] 61.5 mL (0.4944 mol, 122.095 g) pentafluorobromobenzene, 13.22 g (0.5438 mol) magnesium powder and 250.00 g (0.9888 mol) tetraethoxy germane are mixed together at room temperature and diethylether is added dropwise to the vigorously stirred solution until an exothermic reaction is observed (400 mL). After stirring at 35° C. for 16 h the mixture is cooled to room temperature and diethylether evaporated. An excess of n-heptane (˜400 mL) is added to precipitate the magnesium salts. Solution is filtrated and evaporated to dryness. The residue is fractionally distilled under reduced pressure to yield pentafluorophenyl-triethoxygermane. 26

EXAMPLE 10

[0073] (making a Compound IV via Method A):

[0074] Follow the steps in Example 9, then:

[0075] 50 g (0.133 mol) pentafluorophenyl triethoxygermane, 58 mL (0.80 mol, 95.2 g) thionylchloride and 1.97 g (0.017 mol) pyridinium hydrochloride are refluxed and stirred for 24 h. Excess of SOCl2 is evaporated and pentafluorophenyltrichlorogermane isolated by vacuum distillation. 27

EXAMPLE 11

[0076] (making a Compound I via Method A):

C10F7Br+Mg+excess Si(OEt)4→C10F7Si(OEt)3

[0077] 166.5 g (0.50 mol) 2-bromoperfluoronaphthalene, 13.37 g (0.55 mol) magnesium powder and 448.0 mL (2.00 mol, 416.659 g) tetraethoxysilane are mixed together at room temperature and diethylether is added dropwise to the vigorously stirred solution until an exothermic reaction is observed (-200 mL). After stirring at 35° C. for 16 h the mixture is cooled to room temperature and diethylether evaporated. An excess of n-heptane (˜400 mL) is added to precipitate the magnesium salts. Solution is filtrated and evaporated to dryness. The residue is fractionally distilled under reduced pressure to yield perfluoronaphthalenetriethoxysilane. 28

EXAMPLE 12

[0078] (making a Compound IV via Method A):

[0079] Follow the steps in Example 11, then

[0080] 100 g (0.240 mol) perfluoronaphthalenetriethoxysilane, 105.2 mL (1.442 mol, 171.55 g) thionylchloride and 3.54 g (0.0306 mol) pyridinium hydrochloride are refluxed and stirred for 24 h. Excess of SOCl2 is evaporated and perfluoronaphthalenetriethoxysilane isolated by vacuum distillation. 29

EXAMPLE 13

[0081] (making Compound V via Method A):

C6F5Br+Mg+4 MeSi(OMe)3→C6F5(Me)Si(OMe)2

[0082] 57.9 mL (0.465 mol. 114.726 g) bromopentafluorobenzene, 12.42 g (0.511 mol) magnesium powder and 265 mL (1.858 mol. 253.128 g) methyltrimethoxysilane are mixed together at room temperature and diethylether is added dropwise to the vigorously stirred solution until an exothermic reaction is observed (˜320 mL). After stirring at 45° C. for 16 h the mixture is cooled to room temperature and diethylether evaporated. An excess of n-heptane (˜300 mL) is added to precipitate the magnesium salts. Solution is filtrated and evaporated to dryness. The residue, methylpentafluorophenyl)dimethoxysilane, is used without further purification. 30

EXAMPLE 14

[0083] (making Compound VII via Method A):

[0084] Follow steps in Example 13, then

[0085] 81.68 g (0.300 mol) methyl(pentafluorophenyl)dimethoxysilane, 109 mL (1.50 mol. 178.4 g) thionylchloride and 3.69 g (0.0319 mol) pyridinium hydrochloride are refluxed and stirred for 16 h. Excess of SOCl2 is evaporated and methyl(pentafluorophenyl)dichlorosilane isolated by vacuum-distillation. 31

EXAMPLE 15

[0086] (making a Compound V via Method A):

2 C6F5Br+2 Mg+Si(OEt)4→(C6F5)2Si(OEt)2

[0087] 265.2 mL (1.95 mol. 525.353 g) bromopentafluorobenzene, 52.11 g (2.144 mol) magnesium powder and 216 mL (0.975 mol, 203.025 g) tetraethoxysilane are mixed together at room temperature and diethylether is added dropwise to the vigorously stirred solution until an exothermic reaction is observed (˜240 mL). The solution is stirred for 30 minutes after which additional 90 mL of Et2O is carefully added. After stirring at 35° C. for 16 h the mixture is cooled to room temperature and diethylether evaporated. An excess of n-heptane (˜600 mL) is added to precipitate the magnesium salts. Solution is filtrated and evaporated to dryness. The residue is fractionally distilled under reduced pressure to yield di(pentafluorophenyl)diethoxysilane. 32

EXAMPLE 16

[0088] (making a Compound V via Method C):

C6F5Cl+sec-BuLi→C6F5Li+sec-BuCl

C6FsLi+C6F5Si(OEt)2Cl→(C6F5)2Si(OEt)2+LiCl

[0089] 39.52 g (0.195 mol) chloropentafluorobenzene is weighed to a 1000 mL vessel and 250 mL Et2O is added. The vessel is cooled down to −70° C. and 150 mL (0.195 mol) of sec-BuLi (1.3 M) is added dropwise during one hour. The temperature of the solution is kept below −50° C. all the time. The solution is stirred for 30 minutes and 62.54 g (0.195 mol) of diethoxychloropentafluorophenylsilane in Et2O (100 mL) is added in small portions. The solution is stirred for over night allowing it to warm up to room temperature. Formed clear solution is filtered and evaporated to dryness to result di(pentafluorophenyl)diethoxysilane, (C6F5)2Si(OEt)2.

EXAMPLE 17

[0090] (making a Compound VII via Method A or C):

[0091] Follow the steps in Example 15 or Example 16, then:

(C6F5)2Si(OEt)2+SOCl2+py.HCl→(C6F5)2SiCl2

[0092] 180.93 g (0.400 mol) di(pentafluorophenyl)diethoxysilane, 146 mL (2.00 mol. 237.9 g) thionylchloride and 4.92 g (0.0426 mol) pyridinium hydrochloride are refluxed and stirred for 16 h. Excess of SOCl2 is evaporated and di(pentafluorophenyl)dichlorosilane isolated by vacuum-distillation. 33

EXAMPLE 18

[0093] (making an “Other Compound” via Method A):

C6F5MgBr+HSiCl3→C6F5(H)SiCl2

[0094] 600.0 mL (0.300 mol) pentafluorophenyl magnesiumbromide (0.5 M sol. in Et2O) is added dropwise to a solution of 30.3 mL (0.300 mol, 40.635 g) HSiCl3 in Et2O at −70° C. Reaction mixture is allowed to warm slowly to room temperature by stirring overnight. Diethylether is evaporated and an excess of n-heptane (˜200 mL) is added to precipitate the magnesium salts. Solution is filtrated and evaporated to dryness. The residue, pentafluorophenyldichlorosilane, is purified by fractional distillation. 34

EXAMPLE 19

[0095] (making a Compound I via Method C):

CH≡C—Na+ClSi(OEt)3→CH≡C—Si(OEt)3+NaCl

[0096] 79.49 g (0.400 mol) ClSi(OEt)3 in Et2O is slowly added to a slurry of CH≡C—Na (0.400 mol. 19.208 g) in Xylene/light mineral oil at −78° C. Reaction mixture is stirred overnight allowing it slowly warm to room temperature. NaCl is removed by filtration and solution evaporated to dryness to result acetylenetriethoxysilane. 35

EXAMPLE 20

[0097] (making a Compound VII via Method A):

C6F5Br+Mg+CH2═CH—Si(OEt)3→C6F5(CH2═CH)Si(OEt)2   1.

C6F5(CH2═CH)Si(OEt)2+SOCl2+py-HCl→C6F5(CH2═CH)SiCl2   2.

[0098] 100 mL (0.8021 mol, 198.088 g) pentafluorobromobenzene, 24.90 g (1.024 mol) magnesium powder and 670 mL (3.2084 mol, 610.623 g) vinyltriethoxysilane are mixed together at room temperature and Et2O is added dropwise to the vigorously stirred solution until an exothermic reaction is observed (˜400 mL). After stirring at 35° C. for 16 h the mixture is cooled to room temperature and diethylether evaporated. An excess of n-heptane (˜500 mL) is added to precipitate the magnesium salts. Solution is filtrated and evaporated to dryness. The residue is fractionally distilled under reduced pressure to yield pentafluorophenylvinyldiethoxysilane. 36

[0099] 120.275 g (0.3914 mol) pentafluorophenylvinyldiethoxysilane, 143 mL (1.9571 mol, 232.833 g) thionylchloride and 5.880 g (0.0509 mol) pyridinium hydrochloride are refluxed and stirred for 24 h. Excess of SOCl2 is evaporated and pentafluorophenylvinyldiethoxysilane 37

[0100] isolated by vacuum distillation.

EXAMPLE 21

[0101] (making a Compound I from Method B):

CH2═CH—C(═O)—O—Na+ClSi(OEt)3→CH2═CH—C(═O)—O—Si(OEt)3+NaCl

[0102] 6.123 g (0.0651 mol) sodium acrylate is dissolved to 25 mL TBF and cooled to −70° C. 12.8 mL (0.0651 mol, 12.938 g) chlorotriethoxysilane in THF (15 mL) is added dropwise to reaction solution. The solution is stirred for over night allowing it to warm up to room temperature. NaCl is removed by filtration and solution evaporated to dryness to result clear liquid, acryltriethoxysilane. 38

EXAMPLE 22

[0103] (making a Compound II):

CF3—(CF2)7—CH2—CH2—Si(OEt)3+SOCl2+py.HCl→CF3—(CF2)7—CH2—CH2—Si(OEt)2Cl

[0104] 183.11 g (0.300 mol) 1H,1H,2H,2H-Perfluorodecyltriethoxysilane, 22 mL (0.300 mol, 35.69 g) thionylehloride and 4.51 g (0.039 mol) pyridinium hydrochloride are refluxed and stirred for 16 h. Excess of SOCl2 is evaporated and 1H,1H,2H,2H-Perfluorodecylchlorodi(ethoxy)silane isolated by vacuum-distillation. 39

[0105] Though this example is not using Methods A, B or C, method C could be used to add a second organic group (replacing the Cl group), or Methods A and B could be used replace an ethoxy group in the starting material with an additional organic group. Also, the starting material could be made by Methods A, B or C (starting earlier with a tetraethoxysilane and reacting as in the other examples herein).

EXAMPLE 23

[0106] (making a Compound I via Method A):

C8F17Br+Mg+excess Si(OEt)4→C8F17Si(OEt)3

C8F17Si(OEt)3+excess SOCl2+py.HCl→C8F17SiCl3

[0107] 250 g (0.501 mol) 1-Bromoperfluorooctane (or 273.5 g, 0.501 mol 1-Iodoperfluorooctane), 13.39 g (0.551 mol) magnesium powder, small amount of iodine (15 crystals) and 363 mL (2.004 mol, 339.00 g) tetraethoxysilane are mixed together at room temperature and diethylether is added dropwise to the vigorously stirred solution until an exothermic reaction is observed (˜200 mL). After stirring at room temperature for 16 h diethylether is evaporated. An excess of n-heptane (˜400 mL) is added to precipitate the magnesium salts. Solution is filtrated and evaporated to dryness. The residue is fractionally distilled under reduced pressure to yield perfluorooctyltriethoxysilane. 40

EXAMPLE 24

[0108] (making a Compound IV via Method A):

[0109] Follow the steps in Example 23, then

[0110] 174.7 g (0.300 mol) perfluorooctyltriethoxysilane, 131 mL (1.800 mol. 214.1 g) thionylchloride and 4.51 g (0.039 mol) pyridinium hydrochloride are refluxed and stirred for 16 h. Excess of SOCl2 is evaporated and perfluorooctyltriethoxysilane isolated by vacuum-distillation. 41

EXAMPLE 25

[0111] (making a Compound I via Method A):

CF2═CF—O—CF2—CF2—Br+Mg+excess Si(OEt)4→CF2═CF—O—CF2—CF2—Si(OEt)3

[0112] 138.47 g (0.500 mol) 2-Bromotetrafluoroethyl trifluorovinyl ether, 13.37 g (0.550 mol) magnesium powder, small amount of iodine (10 crystals) and 362 mL (2.000 mol, 338.33 g) tetraethoxysilane are mixed together at room temperature and diethylether is added dropwise to the vigorously stirred solution until an exothermic reaction is observed (˜200 mL). After stirring at room temperature for 16 h diethylether is evaporated An excess of n-heptane (˜400 mL) is added to precipitate the magnesium salts. Solution is filtrated and evaporated to dryness. The residue is fractionally distilled under reduced pressure to yield tetrafluoroethyl trifluorovinyl ether triethoxysilane. 42

EXAMPLE 26

[0113] (making a Compound IV via Method A):

[0114] Follow steps in Example 25, followed by

[0115] 108.1 g (0.300 mol) tetrafluoroethyl trifluorovinyl ether triethoxysilane, 131 mL (1.800 mol, 214.1 g) thionylchloride and 4.51 g (0.039 mol) pyridinium hydrochloride are refluxed and stirred for 16 h. Excess of SOCl2 is evaporated and tetrafluoroethyl trifluorovinyl ether trichlorosilane is isolated by vacuum-distillation. 43

EXAMPLE 27

[0116] (making a Compound I via Method B):

CF≡C—Li+ClSi(OEt)3→CF≡C—Si(OEt)3+LiCl

[0117] 30.80 g (0.155 mol) ClSi(OEt)3 in Et2O is slowly added to solution of CF≡C—Li (0.155 mol. 7.744 g, prepared in situ) in Et2O at −78° C. Reaction mixture is stirred overnight allowing it slowly warm to room temperature. LiCl is removed by filtration and solution evaporated to dryness to result fluoroacetylenetriethoxysilane. 44

EXAMPLE 28

[0118] (making a Compound VIII via Method C):

(C6F5)2Si(OFt)2+SOCl2→(C6F5)2Si(OEt)Cl+EtCl+SO2

C6F5Li+(C6F5)2Si(OEt)Cl→(C6F5)3SiOEt+LiCl

(C6F5)3SiOEt+SOCl2→(C6F5)3SiCl+EtCl+SO2

[0119] 180.93 g (0.400 mol) di(pentafluorophenyl)diethoxysilane, 29 mL (0.400 mol, 47.6 g) thionylchloride and 4.92 g (0.0426 mol) pyridinium hydrochloride are refluxed and stirred for 16 h. Unreacted SOCl2 is evaporated and di(pentafluorophenyl)ehloroethoxysilane isolated by vacuum distillation. 45

[0120] 88.54 g (0.200 mol) of di(pentafluorophenyl)chloroethoxysilane in Et2O is slowly added to solution of C6F5—Li (0.200 mol. 34.80 g, prepared in situ) in Et2O at −78° C. The solution is stirred for over night allowing it to warm up to room temperature. Formed clear solution is filtered and evaporated to dryness to result tri(pentafluorophenyl)ethoxysilane, (C6F5)3SiOEt. 46

EXAMPLE 29

[0121] (making a Compound IX via Method C):

[0122] Follow steps in Example 28, followed by

[0123] 114.86 g (0.200 mol) tri(pentafluorophenyl)ethoxysilane, 14.6 mL (0.200 mol, 23.8 g) thionylchloride and 2.46 g (0.0213 mol) pyridinium hydrochloride are refluxed and stirred for 16 h. Unreacted SOCl2 is evaporated and tri(pentafluorophenyl)chlorosilane isolated by vacuum-distillation. 47

[0124] In addition to altering the organic groups in the above examples, it is of course also possible to use other reagents in the methods above. For example, in place of diethyl ether, other solvents such as THF could be used. In place of n-heptane (in Method A) other non polar solvents such as n-hexane could be used. And in place of thionyl chloride (for replacing one or more alkoxy groups with a halogen), chlorine, hydrochloric acid, hydrobromic acid, thionylbromide, chlorine or sulfurylchloride could be used. Also, the temperatures and times (and other process parameters) can be varied as desired. In one embodiment, it is preferred that the molar ratio of the starting material to R2X1 (Methods B or C) is 0.5:1 to 2:1—preferably 1:1. Also, the starting material and R2X1 are preferably mixed at a temperature less than −40 C. degrees, e.g. between −50 C. and −100 C. and warmed to a higher temperature over a period of four hours or more (this higher temperature can be room temperature or higher if desired)—or over a longer period of time such as overnight.

[0125] As can be seen from the examples above, Methods B and C of the invention involve reacting a first compound (having an M group selected from group 14 of the periodic table, 0, 1 or 2 organic groups bound to M) with a second compound (having an element from group 1 of the periodic table and a “new” organic group). As can also be seen from the above, such a reaction can take place if the first compound has alkoxy groups bound to M or both alkoxy and halogen groups (0, 1 or 2 halogen groups) bound to M. Method C, as mentioned earlier, is a variation of Method B—and both methods can be viewed as comprising: reacting a compound of the general formula R14-mMOR3m-nXn, where R1 is any nonfluorinated (including deuterated) or partially or fully fluorinated organic group (preferably a partially or fully fluorinated aryl, alkenyl, alkynyl or alkyl group) as set forth above, where M is selected from group 14 of the periodic table, where X is a halogen, where OR3 is an alkoxy group, where m=2 to 4 and n=0 to 2. R14-mMOR3m-nXn is reacted with R2X1 where R2 is selected from alkyl, alkenyl, aryl or alkynyl (and where R2 is fluorinated (fully or partially), and where X1 is an element from group 1 of the periodic table. X1 is preferably Na, Li or K, more preferably Na or Li, and most preferably Li. M is preferably Si, Ge or Sn, more preferably Si or Ge, and most preferably Si. X is preferably Cl, Br or I, more preferably Cl or Br, and most preferably CL OR3 is preferably an alkoxy group having from 1 to 4 carbon atoms, more preferably from 1 to 3 carbons, and most preferably 2 carbons (ethoxy). Also, “m” is preferably 3 or 4, whereas “n” is preferably 0 or 1.

[0126] R1 and R2 are independently preferably partially or fully fluorinated (though not necessarily as can be seen in prior examples) organic groups such as an aryl group (by aryl group we mean any organic group having a ring structure) though preferably a five or six carbon ring that is unsubstituted or substituted. For a six carbon ring structure, 1, 2 or 3 substituents can be bound to the ring, which substituents can be actively bound to the ring via a variation on the Method C set forth above (to be described further below). The substituents can be alkyl groups of any desired length, straight or branched chain, preferably fluorinated, and preferably having from 1 to 4 carbon atoms. Or the substituents on the ring structure can comprise a C═C double bond and be an alkenyl group (by alkenyl group we mean any organic group with a C═C double bond) such as an acrylate, vinyl or allyl group. A fluorinated vinyl, methyl or ethyl group on a fluorinated phenyl group are examples. Or, the aryl group could be a multi ring structure (e.g. perfluoronaphthalene or a biphenyl group). Or R1 and R2 could independently be an alkenyl group such as a vinyl or longer chain group having a C═C double bond, or a group having other types of double bonds (e.g C═O double bonds or both C═C and C═O double bonds) such as acrylate and methacrylate groups. R1 and R2 could also be an alkynyl group (by alkynyl group we mean any organic group with a carbon-carbon triple bond) as mentioned previously, as well as an alkyl group. If an alkyl group (by alkyl group we mean a carbon chain of any length), preferably the carbon chain is from 1 to 14, and more preferably from 4 to 8. Perfluorinated alkyl groups from 1 to 8 carbons can be used, as well as fluorinated (e.g. partially fluorinated) groups longer than 8 carbons. All the organic groups above could be deuterated in stead of fluorinated (or partially deuterated and partially fluorinated), though fully or partially fluorinated (particularly fully fluorinated) is preferred.

[0127] In Method C set forth above, an organic (or hybrid) group “R” (e.g. R2) becomes bound to a group 3-6 or 13-16 element “M” by replacing a halogen “X” bound to “M” via the specified reaction. In an alternative to this method (Method D), an organic (or hybrid) group “R” (e.g. R1) comprises the halogen “X”—preferably Cl or Br (rather than “X” being bound to “M”). Thus when the reaction is performed, R2 replaces X bound to R1, such that R2 becomes bound to R1 (which is in turn bound to M). Preferably the other groups bound to M are alkoxy groups (OR3) or other organic groups. More particularly, such a method comprises providing a compound XaR1MOR32R4 where a is from 1 to 3, X is a halogen(s) bound to R1, R1 is an organic group (preferably an aryl, alkyl, alkenyl or alkynyl—more preferably an alkyl or aryl group), OR3 is an alkoxy, and R4 is either an additional alkoxy group or an additional organic group (selected from aryl, alkyl, alkenyl or alkynyl), and reacting this compound with R2M1 where M1 is selected from group 1 of the periodic table and R2 is an organic group preferably selected from aryl, alkyl alkenyl and alkynyl, etc., so as to form R2aR1MOR32R4.

[0128] In one embodiment, R4 is an alkoxy group the same as OR3, such that the method comprises reacting XaR1MOR33 with R2M1 to form R2aR1MOR33 (where R1 and OR3 are bound to M and R2 is bound to R1. In another embodiment, R4 is an organic group selected from aryl, alkyl, alkenyl and alkynyl. Preferably OR3 is a methoxy, ethoxy or propoxy, R1 is an aryl or alkyl (straight or branched chain) having from 1 to 14 carbons, and R2 is an aryl, alkyl, alkenyl or alkynyl, where a=1 or 2 if R1 is an alkyl and a=1, 2 or 3 if R1 is an aryl group. R2 can be an epoxy, acrylate, methacrylate, vinyl, allyl or other group capable of cross linking when exposed to an electron beam or in the presence of a photoinitiator and electromagnetic energy (e.g. UV light).

EXAMPLE A

[0129] (forming a Compound I or IV via Method D): 1$\begin{array}{c}1.1\text{,4}-{\mathrm{Br}}_2{C}_6{F}_4+\mathrm{Mg}+{\mathrm{Si}\left(\mathrm{OEt}\right)}_4\to \mathrm{Br}\left(C_6{F}_4\right){\mathrm{Si}\left(\mathrm{OEt}\right)}_3\\ 2.\mathrm{Br}\left(C_6{F}_4\right){\mathrm{Si}\left(\mathrm{OEt}\right)}_3+{\mathrm{CF}}_2=\mathrm{CFLi}\to \left({\mathrm{CF}}_2=\mathrm{CF}\right)\left(C_6{F}_4\right){\mathrm{Si}\left(\mathrm{OEt}\right)}_3\\ 3.\left({\mathrm{CF}}_2=\mathrm{CF}\right)\left(C_6{F}_4\right){\mathrm{Si}\left(\mathrm{OEt}\right)}_3+\mathrm{excess}{\mathrm{SOCl}}_2\stackrel{\mathrm{py}·\mathrm{HC1}}{\to }\left({\mathrm{CF}}_2=\mathrm{CF}\right)\left(C_6{F}_4\right){\mathrm{SiCl}}_3\end{array}$

[0130] 250 g (0.812 mol) 1,4-dibromotetrafluorobenzene, 21.709 g (0.8932 mol) magnesium powder, small amount of iodine (15 crystals) and 181 mL (0.812 mol. 169.164 g) tetraethoxysilane were mixed together at room temperature and diethylether was added dropwise to the vigorously stirred solution until an exothermic reaction was observed (˜250 mL). After sting at room temperature for 16 h diethylether was evaporated. An excess of n-heptane (˜600 mL) was added to precipitate the magnesium salts. Solution was filtrated and evaporated to dryness. The residue was fractionally distilled under reduced pressure to yield 4-bromotetrafluorophenyltriethoxysilane. 48

[0131] 78.246 g (0.200 mol) 4-bromotetrafluorophenyltriethoxysilane in Et2O is slowly added to solution of CF2=CF-Li (0.200 mol. 17.592 g, prepared in situ) in Et2O at −78° C. Reaction mixture is stirred overnight while it will slowly warm to room temperate. LiBr is removed by filtration and the product, 4-triethoxysilylperfluorostyrene, purified by distillation. 49

[0132] 117.704 g (0.300 mol) 4-triethoxysilylperfiuorostyrene, 131 mL (1.800 mol, 214.1 g) thionylchloride and 4.51 g (0.039 mol) pyridinium hydrochloride were refluxed and sniffed for 16 h. Excess of SOCl2 was evaporated and 4-trichlorosilyl-perfiuorostyrene isolated by vacuum-distillation. 50

[0133] The above example could be modified where 2 or 3 halogens (in this case Br) are bound to the phenyl group so as to result in multiple vinyl substituents. Also, the phenyl group could be another organic group such as an straight or branched chain alkyl group, a multi ring aryl group, etc., whereas the vinyl group could be any suitable organic group capable of binding to a group I element (in the above example Li) and replacing the halogen (in the above example Br). Examples other than vinyl include methyl, ethyl, propyl, phenyl, epoxy and acrylate.

EXAMPLE B

[0134] (forming a Compound I via Method D): 2${\mathrm{CF}}_2\mathrm{Cl}-C\left(=O\right)-\mathrm{ONa}+{\mathrm{ClSi}\left(\mathrm{OEt}\right)}_3\to \&AutoLeftMatch;{\mathrm{CF}}_2\mathrm{Cl}-C\left(=O\right)-O-{\mathrm{Si}\left(\mathrm{OEt}\right)}_3+\mathrm{NaCl}{\mathrm{CF}}_2=\mathrm{CF}-\mathrm{Li}+{\mathrm{CF}}_2\mathrm{Cl}-C\left(=O\right)-O-{\mathrm{Si}\left(\mathrm{OEt}\right)}_3\to {\mathrm{CF}}_2=\mathrm{CF}-{\mathrm{CF}}_2-C\left(=O\right)-O-{\mathrm{Si}\left(\mathrm{OEt}\right)}_3+\mathrm{LiCl}$

[0135] 15.246 g (0.10 mol) sodium chlorodifluoroacetate, is dissolved to 100 mL Et2O and cooled to −70° C. 19.7 mL (0.10 mol, 19.872 g) chlorotriethoxysilane in Et2O (50 mL) was added dropwise to reaction solution. The solution was stirred for over night allowing it to warm up to room temperature. NaCl is removed by filtration and solution evaporated to dryness to result clear colourless liquid, chlorodifluoroacetic acid, triethoxysilyl ester. 51

[0136] 29.27 g (0.10 mol) chlorodifluoroacetic acid, triethoxysilyl ester, is dissolved to 100 mL Et2O and slowly added to solution of CF2═CF—Li (0.10 mol, 8.796 g, prepared in situ) in Et2O at −78° C. Reaction mixture is stirred overnight allowing it slowly warm to room temperature. LiCl is removed by filtration and solution evaporated to dryness to result yellow liquid, crude perfluoro-3-butene acid, triethoxysilyl ester. 52

EXAMPLE C

[0137] (forming a Compound I or IV via Method D): 3$\mathrm{Br}\left(C_6{F}_4\right){\mathrm{Si}\left(\mathrm{OEt}\right)}_3+C_6{F}_5-\mathrm{Li}\to C_6{F}_5-C_6{F}_4-{\mathrm{Si}\left(\mathrm{OEt}\right)}_3+\mathrm{LiBr}$$C_6{F}_5-C_6{F}_4-{\mathrm{Si}\left(\mathrm{OEt}\right)}_3+\mathrm{excess}{\mathrm{SOCl}}_2\stackrel{\mathrm{py}·\mathrm{HCl}}{\to }{C}_6{F}_5-C_6{F}_4-{\mathrm{SiCl}}_3$

[0138] 78.246 g (0.200 mol) 4-bromotetrafluorophenyltriethoxysilane in Et2O is slowly added to solution of C6F5—Li (0.200 mol, 34.80 g, prepared in situ) in Et2O at −78° C. Reaction mixture is stirred overnight while it will slowly warm to room temperature. LiBr is removed by filtration and the product, perfluorobiphenyltriethoxysilane, purified by distillation. 53

[0139] 143.516 g (0.300 mol) perfluorobiphenyltriethoxysilane, 131 mL (1.800 mol. 214.1 g) thionylchloride and 4.51 g (0.039 mol) pyridinium hydrochloride were refluxed and stirred for 16 h. Excess of SOCl2 was evaporated and perfluorobiphenyltrichlorosilane isolated by vacuum-distillation. 54

EXAMPLE D

[0140] (forming a Compound I or IV via Method D): 55

[0141] 143.94 g (0.40 mol) 1,4-dibromooctafluorobutane, 10.69 g (0.44 mol) magnesium powder, small amount of iodine (15 crystals) and 88 mL (0.40 mol, 82.42 g) tetraethoxysilane were mixed together at room temperature and diethylether was added dropwise to the vigorously stirred solution until an exothermic reaction was observed (˜200 mL). After stirring at room temperature for 16 h diethylether was evaporated. An excess of n-heptane (˜400 mL) was added to precipitate the magnesium salts. Solution was filtrated and evaporated to dryness. The residue was fractionally distilled under reduced pressure to yield 4-bromooctafluorobutanetriethoxysilane. 56

[0142] 88.641 g (0.200 mol) 4-bromooctafluorobutanetriethoxysilane in Et2O is slowly added to solution of CF2═CF—Li (0.200 mol, 17.592 g, prepared in situ) in Et2O at −78° C. Reaction mixture is stirred overnight while it will slowly warm to room temperature. LiBr is removed by filtration and the product, perfluoro-1-hexenetriethoxysilane, purified by distillation. 57

[0143] 133.295 g (0.300 mol) perfluoro-1-hexenetriethoxysilane, 131 mL (1.800 mol. 214.1 g) thionylchloride and 4.51 g (0.039 mol) pyridinium hydrochloride were refluxed and stirred for 16 h. Excess of SOCl2 was evaporated and perfluoro-1-hexenetrichlorosilane isolated by vacuum-distillation. 58

[0144] In the above “Method D” examples, R1, R2, R3 and R4 are preferably partially or fully fluorinated.

[0145] Hydrolysis and Condensation of the Compound(s):

[0146] Compounds IV, VII and IX have organic (or hybrid) R group(s) and halogen(s) (preferably Br or Cl) bound to M (selected from groups 3-6 or 13-16—preferably group 14)). These compounds can be hydrolyzed alone or in any combination to result in a material having a —M—O—M—O— backbone with R groups bound to the backbone, and that preferably has a molecular weight of from 500 to 10,000 (more preferably from 1000 to 5000). In one embodiment, a compound selected from Compound IV is hydrolyzed with another compound selected from Compound IV. In another embodiment, a single compound from Compound VII is hydrolyzed. Many other combinations are possible, including: a) Compound IV+Compound VII; b) Compound IV+Compound IV+Compound IV; c) Compound VII+Compound VII; d) Compound IV+Compound VII+Compound IX; e) Compound IV+Compound IV+Compound IX; f) Compound VII+Compound IX, etc. Any other combinations, in any desired ratio, can be used for the hydrolysis and eventual deposition.

HYDROLYSIS EXAMPLE 1

[0147] Compound IV+Compound IV:

[0148] If one of the compounds to be hydrolyzed and condensed is pentafluorophenyltrichlorosilane, this can be prepared as in the methods set forth above, by:

C6F5Br+Mg+excess Si(OEt)4→C6F5Si(OEt)3+(C6F5)2Si(OEt)2

C6F5Si(OEt)3+SOCl2+py.HCl→C6F5SiCl3

[0149] 100 mnL (0.8021 mol, 198.088 g) pentafluorobromobenzene, 24.90 g (1.024 mol) magnesium powder and 716 mL (3.2084 mol, 668.403 g) tetraethoxysilane are mixed together at room temperature and diethylether is added dropwise to the vigorously stirred solution until an exothermic reaction is observed (˜200 mL). After stirring at 35° C. for 16 h the mixture is cooled to room temperature and diethylether evaporated. An excess of n-heptane (˜500 mL) is added to precipitate the magnesium salts. Solution is filtrated and evaporated to dryness. The residue is fractionally distilled under reduced pressure to yield pentafluorophenyltriethoxysilane. 59

[0150] 100 mL (0.375 mol, 124.0 g) pentafluorophenyltriethoxysilane, 167 mL (2.29 mol, 272.0 g) thionylchloride and 5.63 g (0.0487 mol) pyridinium hydrochloride are refluxed and stirred for 24 h. Excess of SOCl2 is evaporated and pentafluorophenyltrichlorosilane 60

[0151] isolated by vacuum-distillation.

[0152] If a second of the compounds to be hydrolyzed and condensed is trifluorovinyltriethoxysilane, this can be prepared by:

[0153] 119 mL (0.155 mol) sec-butyllithium (1.3 M solution in cyclohexane) is added under argon with stirring to 18.053 g (0.155 mol) chlorotrifluoroethylene 61

[0154] dissolved in Et2O at −80° C. After the addition is complete the reaction mixture is stirred for 15 min to yield lithiumtrifluoroethylene. 62

[0155] 30.80 g (0.155 mol) ClSi(OEt)3 in Et2O is slowly added to solution of CF2═CF—Li (0.155 mol. 13.633g, prepared in situ) in Et2O at −78° C. Reaction mixture is stirred overnight while it will slowly warm to room temperature. LiCl is removed by filtration and the product, trifluorovinyltriethoxysilane, 63

[0156] is isolated by distillation.

[0157] 24.4 g (0.100 mol) trifluorovinyltriethoxysilane, 44 mL (0.60 mol. 71.4 g) thionylchloride and 0.497 g (0.0045 mol) pyridinium hydrochloride are refluxed and stirred for 24 h. Excess of SOCl2 is evaporated and trifluorovinyltrichlorosilane 64

[0158] is purified by distillation.

[0159] Then, to a solution of trifluorovinyltrichlorosilane and pentafluorophenyltrichlorosilane at a molar ratio 1:1 in dehydrated tetrahydrofuran, is added dropwise a stoichiometric amount of water (e.g. H20 or D20) in THF at 0° C. (nonstoichiometric amounts, higher or lower, can also be used). After stirring for 1 hour, the solution is neutralized with 3 equivalents of sodium hydrogencarbonate. After confirming the completion of generation of carbonic acid gas from the reaction solution, the solution is filtered and volatile compounds are removed by vacuum evaporation to obtain colorless, transparent viscous fluid, poly(pentafluorophenyltrifluorovinylsiloxane), in a three dimensional network of alternating silicon and oxygen atoms. 65

[0160] The above is but one example of a method comprising: reacting a compound of the general formula R1MX33 with a compound of the general formula R2AMX33 where R1 is selected from alkyl alkenyl, aryl and alkynyl, R2 is selected from alkenyl, aryl or alkynyl, M is an element selected from groups 3-6 or 13-16 though preferably from group 14 of the periodic table, and X3 is a halogen; with H20 or D20; so as to form a compound having a molecular weight of from 500 to 10,000 with a —M—O—M—O— backbone with R1 and R2 substituents on each M.

[0161] In the hydrolysis example above, silicon atoms of the network are modified by pentafluorophenyl and trifluorovinyl groups in an approximate ratio 1:1. Of course other ratios are possible depending upon the ratio of starting materials, and, of course, other three dimensional networks can be achieved by having other (or additional) starting materials selected from Compound IV, VII and IX, along with other hydrolyzable materials. An alternate example is a method comprising: reacting a compound of the general formula R1R2MX32 where R1 is selected from alkyl, alkenyl, aryl and alkynyl, R2 is selected from alkenyl, aryl or alkynyl, M is an element selected from group 14 of the periodic table, and X3 is a halogen; with D20; so as to form a compound having a molecular weight of from 500 to 10,000 with a —M—O—M—O— backbone with R1 and R2 substituents on each M.

[0162] Also, though “M” in the above hydrolysis example is silicon, it is possible to have materials with other M groups, or “dope” one or more silanes to be hydrolyzed with a lesser amount of a compound having a different M group such as germanium (or boron, aluminum, selenium, etc.).

[0163] Deposition of the Hydrolyzed and Condensed Material:

[0164] The material formed as above preferably has a molecular weight between 500 and 10,000, more preferably between 1000 and 5000. Other molecular weights are possible within the scope of the invention, however a weight between 1000 and 5000 provides the best properties for depositing the material on a substrate. The substrate can be any suitable substrate, such as any article of manufacture that could benefit from a hydrophobic and/or transparent layer or coating, In the fields of electronics and optical communications, the material could be deposited as a final passivation layer, as a glob top coating, as an underfill in a flip chip process, as a hermetic packaging layer, etc. Because the material can be patterned as will be discussed further below, the material could be deposited on a substrate (e.g. a glass, quartz, silicon or other wafer) as a buffer/cladding, waveguide/core or other layer within a waveguide or other optoelectronic/photonic device.

[0165] In general, the siloxane oligomer having the molecular weight as set forth above is mixed with a suitable solvent and deposited. If the material is to be patterned by exposure to electromagnetic radiation (e.g. UV light) then a photoinitiator can be mixed into the material along with the solvent. There are many suitable types of photoinitiators that could be used, such as Irgacure 184, Irgacure 500, Irgacure 784, Irgacure 819, Irgacure 1300, Irgacure 1800, Darocure 1173 or Darocure 4265. The initiator could be highly fluorinated, such as 1,4-bis(pentafluorobenzoyl)benzene or Rhodosil 2074 photoinitiator. Also, thermal initiators can be applied for thermal crosslinking of organic carbon double bond moieties, such as with Benzoyl peroxide, 2,2′-Azobisisobutyronitrile, or tert-Butyl hydroperoxide.

[0166] Deposition Example 1: Add 10 w-% of methyl isobutyl ketone and 2 w-% of Irgacure 819 photoinitiator to result in the formation of a spin-coatable and photo-sensitive material. The material is deposited by spin coating, spray coating, dip coating, etc. onto a substrate or other article of manufacture. As mentioned herein, many other organic groups can be used in place of the above groups, though preferably one of the groups in one of the compounds is capable of cross linking when exposed to electromagnetic energy (or an electron beam)—e.g. an organic group with a ring structure (e.g. an epoxy) or a double bond (e.g. vinyl, allyl, acrylate, etc.).

[0167] Forming a Waveguide:

[0168] One use of the material set forth above is as a layer within a waveguide. Though the waveguide could be a fiber optic waveguide (with substantially circular cross section) the example below is in relation to a planar waveguide. On a substrate (PCB, IC, silicon, glass or quartz wafer, etc.) is deposited a lower cladding layer. (A buffer layer can first be deposited if desired.) The cladding layer is made by forming Compounds IV, VII and/or IX and hydrolyzing such compound(s), followed by mixing the hydrolyzed material with a solvent and thermal initiator and then depositing onto the substrate. After deposition, the cladding layer can be fully or partially baked (or exposed to UV light if a photoinitiator is used in place of the thermal initiator) to solidify the cladding. On the cladding layer is deposited a core layer that is made and deposited as above, except with a different ratio of compounds or different compounds that are hydrolyzed/condensed to form the material ready for deposition. By modifying the hydrolysable compounds and/or ratios of compounds in the core layer vs. those in the cladding layer, a different index of refraction is achieved. A developer (e.g. e.g. methanol ethanol, propanol, acetone, methyl isobutyl ketone, tetrahydrofuran, Dow Chemical DS2100, Dow Chemical DS3000, etc.) is then applied to remove unexposed material. In this way, a core for the waveguide is formed. Then an upper cladding layer is made and deposited in the same way as the lower cladding layer. Though in this example the mask is a binary mask (the material is either fully exposed or not exposed to electromagnetic radiation), it is also possible to provide partial exposure (e.g. in a continuum from full exposure to a low or non-exposure level as in a gray scale mask). Such a gray scale exposure can form a vertical taper in the waveguide when the developer is applied.

[0169] This invention has been described in connection with the preferred embodiments. Many variations of the above embodiments are contemplated as being within the scope of the invention.

Claims

1. A method comprising: reacting a compound of the general formula (I) R14-mMOR3m wherein m is an integer from 2 to 4, R1 is selected from alkyl alkenyl, aryl, alkynyl or epoxy, and wherein R1 is nonfluorinated, or fully or partially fluorinated; OR3 is alkoxy; and M is an element selected from group 14 of the periodic table; with a compound of the general formula R2M1 wherein R2 is selected from alkyl, alkenyl, aryl, alkynyl or epoxy, and wherein R2 is at least partially fluorinated; and M1 is an element from group I of the periodic table; so as to make a compound of the general formula R14-mMOR3m-1R2.

2. The method of claim 1, wherein Ml is Na, Li or K.

3. The method of claim 1, wherein R2 is fully or partially fluorinated.

4. The method of claim 3, wherein R2 is a fully or partially fluorinated alkenyl or alkynyl group.

5. The method of claim 1, wherein R2 is an alkyl group having from 1 to 10 carbons, vinyl or allyl group.

6. The method of claim 1, wherein R2 is a fully or partially fluorinated alkenyl group.

7. The method of claim 1, wherein R1 is a fully or partially fluorinated or nonfluorinated alkenyl group.

8. The method of claim 1, wherein R1 is an aryl group having one or more rings, or an alkyl group having from 1 to 14 carbons.

9. The method of claim 8, wherein R1 is an aryl group or alkyl group that is fully or partially fluorinated.

10. The method of claim 9, wherein the aryl group or alkyl group of R1 is fully fluorinated.

11. The method of claim 10, wherein R1 is a fully or partially fluorinated phenyl or fluorinated alkyl group having from 4 to 10 carbon atoms.

12. The method of claim 11, wherein the fully or partially fluorinated phenyl group of R1 is substituted with fully or partially fluorinated methyl, vinyl or ethyl groups.

13. The method of claim 1, wherein OR3 is C1—C4 alkoxy.

14. The method of claim 1, wherein M is Si, Ge, Al or Sn.

15. The method of claim 1, further comprising: a) reacting a compound of the general formula: R54-mM2R6m wherein m is an integer from 2 to 4, R5 is selected from alkyl alkenyl, aryl, or fluorinated alkyl, alkenyl or aryl; R6 is alkoxy; and M2 is an element selected from groups 3-6 or 13-16 of the periodic table; with a compound of the general formula: R7M3 wherein R7 is selected from alkyl, alkenyl, aryl, alkynyl, and wherein R7 is at least partially fluorinated; and M3 is an element from group I of the periodic table; so as to make a compound of the general formula: R7M2R53-nR6n wherein n is an integer from 1 to 3.

16. The method of claim 15, wherein M is Si, and M2 is an element selected from groups 14-16 of the periodic table other than Si.

17. The method of claim 15, wherein at least one of R1, R2, R5 and R7 comprise an alkenyl group and wherein R2MR13-nOR3n and R7M2R53-nR6n are hydrolyzed and condensed together so as to undergo cross linking.

18. The method of claim 1, wherein OR3 is C1—C3 alkoxy.

19. The method of claim 1, wherein R2 is a C2+straight chain or C3+branched chain.

20. The method of claim 1, wherein either R1 or R2 is a perfluorinated organic group having an unsaturated double bond.

21. The method of claim 1, wherein R1 or R2 is an epoxy group.

22. The method of claim 1, wherein m is 2 or 3.

23. The method of claim 22, wherein M is Si or Ge.

24. The method of claim 2, wherein Ml is Na or Li.

25. The method of claim 1, further comprising reacting the compound of the general formula R2MR13-mOR3m with a halogen or halide compound so as to form compound of the general formula R2MR13-mX3p where X3 is a halogen and p is from 1 to 3 but not greater than m.

26. The method of claim 25, wherein p is 2.

27. The method of claim 25, wherein X3 is Br or Cl.

28. The method of claim 27, wherein p is 2 or 3.

29. The method of claim 25, wherein the halogen or halide compound is hydrobromic acid, thionylbromide, hydrochloric acid, chlorine, thionylchloride or sulfurylchloride.

30. The method of claim 29, wherein the halogen or halide compound is reacted with R2MR13-mOR3m in the presence of a catalyst.

31. The method of claim 30, wherein the catalyst is pyridinium hydrochloride.

32. The method of claim 1, wherein m is 3, R2 is fluorinated alkyl, R1 is fluorinated aryl or C4+alkyl and OR3 is C1—C4 alkoxy.

33. The method of claim 32, wherein R2 is fluorinated vinyl and R1 is fluorinated phenyl.

34. The method of claim 1, wherein m is 3, R2 is fluorinated alkenyl or fluorinated aryl.

35. The method of claim 34, wherein OR3 is methoxy or ethoxy.

36. The method of claim 35, wherein OR3 is ethoxy.

37. The method of claim 1, wherein the molar ratio of the compound of the general formula R14-mMOR3m to the compound of the general formula R2M1 is from 0.5:1 to 2:1.

38. The method of claim 1, wherein the compound of the general formula I is dissolved in ether.

39. The method of claim 1, wherein R14-mMOR3m is prepared by reacting R1X2+Mg+OR34M, wherein X2 is Br or I, if m is 2 or 3.

40. The method of claim 39, wherein R1 is single or multi-ring aryl, single or multi-ring fully or partially fluorinated aryl, single or multi-ring fully or partially fluorinated aryl, C5+alkyl, fully or partially fluorinated C5+alkyl.

41. The method of claim 39, wherein X2 is Br.

42. The method of claim 25, wherein p is 2.

43. The method of claim 42, further comprising performing a condensation reaction with the compound of the general formula R2MR13-nX3p.

44. The method of claim 43, wherein the condensation reaction is performed with H2O or D2O.

45. The method of claim 44, wherein the condensation reaction forms an intermediate R2MR1(OD)2 or R2MR1(OH)2.

46. The method of claim 45, wherein a material is formed with a repeating —M—O—M—O— backbone having R2 and R1 substituents on each M and the material having a molecular weight of from 500 to 10000.

47. The method of claim 46, wherein the molecular weight is from 1500 to 5000.

48. The method of claim 1, wherein R2 and R1 are fully fluorinated.

49. The method of claim 44, wherein the condensation reaction is performed with D2O.

50. The method of claim 1, wherein either R2 or R1 is an aryl group that is a single ring or polycyclic aromatic substituent.

51. The method of claim 50, wherein either R2 or both R1 and R2 area fully or partially fluorinated single ring or polycyclic aromatic substituent.

52. The method of claim 51, wherein either R2 or R1 has one or two rings.

53. The method of claim 46, further comprising spinning on the material having a molecular weight of from 500 to 10000 onto a substrate.

54. The method of claim 53, further comprising heating the material on the substrate or exposing the material on the substrate to electromagnetic radiation or an electron beam.

55. The method of claim 54, wherein the material is exposed to an electron beam or to electromagnetic radiation via a mask so as to selectively further cross link the material and increase the molecular weight of the material in selected areas.

56. The method of claim 55, further comprising removing non-exposed material with a developer.

57. The method of claim 56, wherein the developer is selected from methanol, ethanol, propanol, acetone, methyl isobutyl ketone, Dow Chemical DS2100, Dow Chemical DS3000, diluted nitric acid, hydrochloric acid, sulfuric acid, HF, aqueous NaOH or KOH solutions.

58. The method of claim 53, wherein the material is spun on after mixing with a solvent.

59. The method of claim 58, wherein wherein the solvent is selected from isopropanol, ethanol, methanol, THF, mesitylene, toluene, cyclohexanone, cyclopentanone, dioxane, methyl isobutyl ketone, or perfluorinated toluene.

60. The method of claim 1, wherein M is Si.

61. The method of claim 58, wherein the material is mixed with a solvent and photoinitiator prior to spin on.

62. The method of claim 61, wherein the photoinitiator is selected from Irgacure 184, Irgacure 500, Irgacure 784, Irgacure 819, Irgacure 1300, Irgacure 1800, Darocure 1173 or Darocure 4265, 1,4-bis(pentafluorobenzoyl)benzene or Rhodosil 2074.

63. The method of claim 58, wherein after spin-on, the material is patterned and, along with at least one additional layer deposited on the substrate, formed into a component for an optical device.

64. The method of claim 1, wherein R14-mMOR3m and R2M1 are mixed at a temperature less than −40 C.

65. The method of claim 64, wherein R14-mMOR3m and R2M1 are mixed at a temperature of between −50 and −100 C.

66. The method of claim 64, wherein R14-mMOR3m and R2M1 are mixed in an ether and brought to a temperature over 0 C. during a period of four hours or more.

67. The method of claim 66, wherein R14-mMOR3m and R2M1 are brought to room temperature overnight.

68. The method of claim 1, wherein R2 is an aryl group having a single ring or a multi ring structure.

69. The method of claim 68, wherein the single ring or multi ring structure is substituted with one or more groups selected from alkyl, alkenyl and/or alkynyl.

70. The method of claim 69, wherein the one or more substituent groups on the single or multi-ring aryl is at least partially fluorinated.

71. The method of claim 16, wherein M2 is Ge, Al or Sn.

72. The method of claim 1, wherein m is 2.

73. The method of claim 1, wherein m is 3.

74. The method of claim 25, wherein p is 1.

75. The method of claim 1, wherein R1 is nonfluorinated.

76. The method of claim 75, wherein R1 is nonfluorinated methyl of vinyl.

77. The method of claim 1, further comprising hydrolyzing and condensing R2MR13-mOR3m, alone or with another compound of the same formula where M or the R groups are different, so as to form a cross linked material comprising a three dimensional network of M and 0 atoms with the M atoms having R1 and/or R2 substituents.

78. The method of claim 77, further comprising depositing the cross linked material on a substrate.

79. The method of claim 78, wherein the depositing is by dip coating, spraying or spin coating.

80. The method of claim 79, wherein the substrate is a glass, quartz or semiconductor substrate.

81. The method of claim 79, wherein the substrate is a printed circuit board.

82. The method of claim 78, further comprising providing one or more light emittors or photodetectors on the substrate before or after depositing the cross linked material.

83. The method of claim 78, further comprising exposing the deposited material to electromagnetic radiation or an electron beam to further cross link the material.

84. The method of claim 83, wherein the exposure to electromagnetic radiation is via a mask so as to expose a portion of the material and leave a remaining portion unexposed.

85. The method of claim 84, wherein the unexposed portion of the material is removed with a developer.

86. The method of claim 1, wherein R1 is a fully or partially fluorinated or nonfluorinated alkenyl or alkynyl group.

87. The method of claim I, wherein R1 is a fully or partially fluorinated or nonfluorinated vinyl or allyl group.

88. The method of claim 1, wherein R1 is a fully or partially fluorinated alkenyl group.

89. The method of claim 1, wherein R2 is a fully or partially fluorinated alkenyl group.

90. The method of claim 1, wherein R2 is a single ring aryl, multi-ring aryl, or alkyl group.

91. The method of claim 90, wherein the single ring aryl, multi-ring aryl, or alkyl group of R2 is fully or partially fluorinated.

92. The method of claim 91, wherein the aryl, multi-ring aryl, or alkyl group of R2 is fluorinated.

93. The method of claim 92, wherein R2 is a fully or partially fluorinated phenyl or fluorinated C1—C5 alkyl group.

94. The method of claim 93, wherein the fully or partially fluorinated phenyl group of R2 is substituted with fully or partially fluorinated methyl, vinyl or ethyl groups.

95. The method of claim 1, further comprising purifying R2MR14-mOR3m-1.

96. The method of claim 1, wherein one of R1 and R2 comprises an unsaturated double bond or ring structure, and the other of R1 and R2 comprises an a carbon chain having 4 or more carbon atoms or a single or multi aromatic ring structure.

97. The method of claim 1, wherein R1 or R2 comprises a ring structure or double bond capable of degradation in the presence of an electron beam or in the presence of a photoinitiator and electromagnetic energy.

98. The method of claim 1, wherein m=4, such that MOR34 is reacted with R2M1 to form R2MOR33.

99. The method of claim 1, wherein m=3, such that R1MOR33 is reacted with R2M1 to form R2MR1OR32.

100. The method of claim 1, wherein m=2, such that R12MOR32 is reacted with R2M1 to form R2R12MOR3.

101. A method comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is an element selected from group 14 of the periodic table, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33.

102. The method of claim 101, wherein M1 is Na, Li or K.

103. The method of claim 101, wherein R1 is fully or partially fluorinated.

104. The method of claim 103, wherein R1 is a fully or partially fluorinated alkenyl or alkynyl group.

105. The method of claim 1 wherein R1 is a vinyl or allyl group.

106. The method of claim 101, wherein R1 is a fully or partially fluorinated alkenyl group.

107. The method of claim 101, wherein R2 is a fully or partially fluorinated alkenyl group.

108. The method of claim 101, wherein R1 is a single ring aryl, multi-ring aryl, or alkyl group having 1 or more carbons.

109. The method of claim 108, wherein the single ring aryl, multi-ring aryl, or alkyl group of R1 is fully fluorinated.

110. The method of claim 109, wherein R1 is a substituted or unsubstituted single ring aryl group that is perfluorinated.

111. The method of claim 110, wherein R1 is a fully or partially fluorinated phenyl or fully or partially fluorinated C1—C5 alkyl group.

112. The method of claim 111, wherein the fluorinated phenyl group of R1 is substituted with fluorinated methyl, vinyl, allyl or ethyl groups.

113. The method of claim 101, wherein OR3 is C1—C4 alkoxy.

114. The method of claim 101, wherein M is Si, Ge, Pb or Sn.

115. The method of claim 101, further comprising: a) reacting a compound of the general formula: R54-mM2R6m wherein m is an integer from 2 to 4, R5 is selected from alkyl alkenyl, aryl, or fluorinated alkyl alkenyl or aryl; R6 is alkoxy; and M2 is an element selected from group 14 of the periodic table; with a compound of the general formula: R7M3 wherein R7 is selected from alkyl, alkenyl, aryl, alkynyl, and wherein R7 is at least partially fluorinated; and M3 is an element from group I of the periodic table; so as to make a compound of the general formula: R7M2R53-nR6n, wherein n is an integer from 1 to 3.

116. The method of claim 114, wherein M is Si and M2 is an element selected from groups 3-6 or 13-16 of the periodic table other than Si.

117. The method of claim 115, wherein at least one of R1, R7 and R5 comprise an alkenyl group and wherein R1MOR33 and R7M2R53-nR6n are halogenated, hydrolyzed and condensed together so as to undergo cross linking.

118. The method of claim 101, wherein OR3 is C1—C3 alkoxy.

119. The method of claim 101, wherein R1 is a C2+straight or C3+branched chain.

120. The method of claim 101, wherein M1 is Na or Li.

121. The method of claim 101, wherein X3 is Br or Cl.

122. The method of claim 121, wherein X3 is Cl.

123. The method of claim 120, wherein M1 is Li.

124. The method of claim 101, further comprising: reacting the compound of the general formula R1MOR33 with a halogen or halide compound so as to form a compound of the general formula R1MOR32X3 where X3 is a halogen.

125. The method of claim 124, wherein X3 is Br or Cl.

126. The method of claim 125, wherein X3 is Cl.

127. The method of claim 124, wherein the halogen or halide compound is hydrobromic acid, thionylbromide, hydrochloric acid, chlorine, thionylchloride or sulfurylchloride.

128. The method of claim 127, wherein the halogen or halide compound is reacted with R1MOR32X3 in the presence of a catalyst.

129. The method of claim 101, wherein R1 is fully fluorinated.

130. The method of claim 129, wherein R1 is a single or multi ring aryl group having one or more methyl, ethyl allyl or vinyl substituents.

131. The method of claim 130, wherein the substituents on the single or multi ring aryl group are perfluorinated.

132. The method of claim 101, wherein R1 is a substituted or unsubstituted alkyl, alkenyl, aryl or alkynyl group.

133. The method of claim 131, wherein R1 is a 4 to 8 sided ring structure.

134. The method of claim 133, wherein the 4 to 8 sided ring structure comprises one or more double bonds.

135. The method of claim 134, wherein the 4 to 8 sided ring structure comprises N, S or O.

136. The method of claim 133, wherein R1 is a 5 or 6 sided ring structure.

137. The method of claim 101, further comprising: reacting the compound of the general formula R1MOR33 with a compound of the general formula R2M2; where R2 is selected from alkyl, alkenyl, aryl and alkynyl; and M2 is an element from group I of the periodic table; so as to form a compound of the general formula R1R2MOR32.

138. The method of claim 137, wherein M2 is Na, Li or K.

139. The method of claim 137, wherein R2 is fully or partially fluorinated.

140. The method of claim 139, wherein R2 is a fully or partially fluorinated alkenyl or alkynyl group.

141. The method of claim 137, wherein R2 is a vinyl, acrylate, methacrylate, epoxy or allyl group.

142. The method of claim 137, wherein R2 is a fully or partially fluorinated alkenyl group.

143. The method of claim 137, wherein R1 or R2 is an epoxy group.

144. The method of claim 137, wherein R2 is an aryl, multi-ring aryl, or alkyl group having 4 or more carbons.

145. The method of claim 144, wherein the aryl, multi-ring aryl, or alkyl group of R2 is fluorinated.

146. The method of claim 145, wherein the aryl, multi-ring aryl, or alkyl group of R2 is fully fluorinated.

147. The method of claim 146, wherein R2 is a fluorinated phenyl or fluorinated C4+alkyl group.

148. The method of claim 147, wherein the fluorinated phenyl group of R2 is substituted with fluorinated methyl, ethyl or vinyl groups.

149. The method of claim 137, wherein OR3 is C1—C4 alkoxy.

150. The method of claim 137, wherein M is Si, Ge or Sn.

151. The method of claim 150, wherein M is Si or Ge.

152. The method of claim 150, wherein M is Si.

153. The method of claim 151, wherein M is Ge.

154. The method of claim 137, wherein OR3 is C1—C3 alkoxy.

155. The method of claim 137, wherein R2 is a straight or branched chain having 5 or more carbons.

156. The method of claim 137, wherein M2 is Na or Li.

157. The method of claim 101, further comprising: reacting the compound of the general formula R1MOR33 with a halogen or halide compound so as to form a compound of the general formula R1MOR3X32 where X3 is a halogen.

158. The method of claim 157, wherein R1 or R2 is fluorinated vinyl.

159. The method of claim 156, wherein M2 is Li.

160. The method of claim 137, further comprising: reacting the compound of the general formula R1R2MOR32 with a halogen or halide compound so as to form a compound of the general formula R1R2MX32 or R1R2MOR3X3, where X3 is a halogen.

161. The method of claim 160, wherein X3 is Br or Cl.

162. The method of claim 161, wherein X3 is Cl.

163. The method of claim 160, wherein the halogen or halide compound is hydrobromic acid, thionylbromide, hydrochloric acid, chlorine, thionylchloride or sulfurylchloride.

164. The method of claim 163, wherein the halogen or halide compound is chlorine or a chloride compound.

165. The method of claim 137, wherein R2 is fully or partially fluorinated.

166. The method of claim 165, wherein R2 is fully or partially fluorinated.

167. The method of claim 166, wherein R2 is fully fluorinated.

168. The method of claim 137, wherein R1 is a substituted or unsubstituted alkyl, alkenyl, aryl or alkynyl group.

169. The method of claim 167, wherein R1 is a substituted or unsubstituted alkyl, alkenyl, aryl or alkynyl group.

170. The method of claim 168, wherein the aryl group is substituted with one or more groups selected from alkyl, alkenyl and/or alkynyl groups.

171. The method of claim 137, wherein R1 is a single or multi ring aryl group.

172. The method of claim 171, wherein R1 is a substituted or unsubstituted single ring aryl group.

173. The method of claim 160, wherein R1R2MX32 is formed.

174. The method of claim 137, wherein R1 is different than R2.

175. The method of claim 137, wherein R1 is the same as R2.

176. The method of claim 137, wherein R1 comprises a double or triple bond and R2 comprises a ring structure or a carbon chain of two or more carbons.

177. The method of claim 137, wherein R2 comprises a double or triple bond and R1 comprises a ring structure or carbon chain of two or more carbons.

178. The method of claim 101, wherein X3MOR33 is formed by reacting MOR34 with a halide or halogen compound.

179. The method of claim 101, further comprising: reacting the compound of the general formula R1MOR33 with a halogen or halide compound so as to form a compound of the general formula R1MX33 where X3 is a halogen.

180. The method of claim 179, wherein X3 is Br or Cl.

181. The method of claim 180, wherein X3 is CL.

182. The method of claim 179, wherein the halogen or halide compound is hydrobromic acid, thionylbromide, hydrochloric acid, chlorine, thionylchloride or sulfurylchloride.

183. The method of claim 179, wherein the halogen or halide compound is chlorine or chloride compound.

184. The method of claim 137, further comprising: reacting the compound of the general formula R1R2MOR32 with a halogen or halide compound so as to form a compound of the general formula R1R2MX32, where X3 is a halogen.

185. The method of claim 137, wherein either R1 or R2 is a fluorinated methyl or ethyl group.

186. The method of claim 101, wherein M is Si.

187. The method of claim 101, wherein X3MOR3 and R1M1 are mixed at a temperature less than −40 C.

188. The method of claim 187, wherein X3MOR3 and R1M1 are mixed at a temperature of between −50 and −100 C.

189. The method of claim 187, wherein X3MOR3 and R1M1 are mixed in an ether and brought to a temperature over 0 C. during a period of four hours or more.

190. The method of claim 189, wherein X3MOR3 and R1M1 are brought to room temperature overnight.

191. The method of claim 190, further comprising removing M1X3 by filtration followed by distillation by purification of R1MOR33.

192. The method of claim 187, wherein R1 is a perfluorinated alkenyl or perfluorinated alkynyl group.

193. The method of claim 101, wherein R1 is (CF2)xCF═CF2 where x=0 to 10.

194. The method of claim 193, wherein R1 is a fluorinated methyl group.

195. The method of claim 101, wherein R1 is an aryl group selected from perfluoronaphthalene, perfluorophenyl, perfluoropyridine, perfluorotoluene, perfluorofuran, perfluorothiophene and perfluorostyrene.

196. The method of claim 101, wherein R1 is an alkenyl group comprised of a vinyl group on a straight or branched chain perfluorinated alkyl.

197. The method of claim 101, further comprising: reacting a compound of the general formula X4M2R63, where X4 is a halogen, M2 is an element selected from group 14 of the periodic table, and R6 is alkoxy; with a compound of the general formula R7M5; where R7 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R7 is partially or fully fluorinated; and M5 is an element from group I of the periodic table; so as to form a compound of the general formula R7MR63.

198. The method of claim 197, wherein M is Si and M2 is an element selected from groups 3-6 or 13-16 of the periodic table other than Si.

199. The method of claim 160, wherein the compound of the general formula R1R2MOR3X3 is formed, followed by reacting with a compound of the general formula R8M4, wherein M4 is an element from group I of the periodic table and R8 is an alkyl, alkenyl, aryl or alkynyl group.

200. The method of claim 124, further comprising: reacting the compound of the general formula R1MOR32X3 with a compound of the general formula R2M2; where R2 is selected from alkyl alkenyl, aryl and alkynyl; and M2 is an element from group I of the periodic table; so as to form a compound of the general formula R1R2MOR32.

201. A method comprising: reacting a compound of the general formula (I) R14-mMOR3m-nXn wherein m is an integer from 2 to 4, and n is an integer from 0 to 3 and is not greater than m; R1 is selected from alkyl, alkenyl, aryl, alkynyl or epoxy, and wherein R1 is nonfluorinated, or fully or partially fluorinated; OR3 is alkoxy; X is a halogen; and M is an element selected from group 14 of the periodic table; with a compound of the general formula R2M1 wherein R2 is selected from alkyl, alkenyl, aryl, alkynyl or epoxy, and wherein R2 is at least partially fluorinated; and M1 is an element from group I of the periodic table; so as to make a compound of the general formula R2MR14-mOR3m-nXn-1 if n>0 or R2MR14-mOR3m-1 if n=0.

202. The method of claim 201, wherein M1 is Na, Li or K.

203. The method of claim 201, wherein R2 is fully or partially fluorinated.

204. The method of claim 203, wherein R2 is a fully or partially fluorinated alkenyl or alkynyl group.

205. The method of claim 201, wherein R2 is an alkyl group having from 1 to 14 carbons, vinyl or allyl group.

206. The method of claim 201, wherein R2 is a fully or partially fluorinated alkenyl group.

207. The method of claim 201, wherein R1 is a fully or partially fluorinated or nonfluorinated alkenyl group.

208. The method of claim 201, wherein R1 is an aryl group having one or more rings, or an alkyl group having from 1 to 14 carbons.

209. The method of claim 208, wherein the aryl group or alkyl group of R1 is filly or partially fluorinated.

210. The method of claim 209, wherein the aryl group or alkyl group of R1 is fully fluorinated.

211. The method of claim 210, wherein R1 is a fully or partially fluorinated phenyl or fluorinated alkyl group having from 4 to 10 carbon atoms.

212. The method of claim 211, wherein the fully or partially fluorinated phenyl group of R1 is substituted with fully or partially fluorinated methyl, vinyl or ethyl groups.

213. The method of claim 201, wherein OR3 is C1-C4 alkoxy.

214. The method of claim 201, wherein M is Si, Ge, Al or Sn.

215. The method of claim 201, further comprising: a) reacting a compound of the general formula: R54-mM2R6m wherein m is an integer from 2 to 4, R5 is selected from alkyl, alkenyl, aryl, or fluorinated alkyl, alkenyl or aryl; R6 is alkoxy; and M2 is an element selected from groups 3-6 or 13-16 of the periodic table; with a compound of the general formula: R7M3 wherein R7 is selected from alkyl, alkenyl, aryl, alkynyl, and wherein R7 is at least partially fluorinated; and M3 is an element from group I of the periodic table; so as to make a compound of the general formula: R7M2R53-nR6n, wherein n is an integer from 1 to 3.

216. The method of claim 215, wherein M is Si, and M2 is an element selected from groups 14-16 of the periodic table other than Si.

217. The method of claim 215, wherein at least one of R2, R1, R7 and R5 comprise an alkenyl group and wherein R2MR13-nOR3n and R7M2R53-nR6n are hydrolyzed and condensed together so as to undergo cross linking.

218. The method of claim 201, wherein OR3 is C1—C3 alkoxy.

219. The method of claim 201, wherein R2 is a C2+straight chain or C3+branched chain.

220. The method of claim 201, wherein n is 1.

221. The method of claim 220, wherein n is 2.

222. The method of claim 201, wherein m is 2 or 3.

223. The method of claim 222, wherein M is Si.

224. The method of claim 202, wherein M1 is Na or Li.

225. The method of claim 201, wherein n is 1 such that R2MR14-mOR3m-1 is made and further comprising reacting the compound of the general formula R2MR14-mOR3m-1 with a halogen or halide compound so as to form compound of the general formula R2MR14-mX3m-1 where X3 is a halogen.

226. The method of claim 225, wherein m is 3.

227. The method of claim 201, wherein X is Br or Cl.

228. The method of claim 227, wherein n is from 1 to 3.

229. The method of claim 225, wherein the halogen or halide compound is hydrobromic acid, thionylbromide, hydrochloric acid, chlorine, thionylchloride or sulfurylchloride.

230. The method of claim 229, wherein the halogen or halide compound is reacted with R2MR14-mOR3m-1 in the presence of a catalyst.

231. The method of claim 230, wherein the catalyst is pyridinium hydrochloride.

232. The method of claim 201, wherein m is 3, R2 is fluorinated alkyl, R1 is fluorinated aryl or C4+alkyl and OR3 is C1—C4 alkoxy.

233. The method of claim 232, wherein R2 is fluorinated vinyl and R1 is fluorinated phenyl.

234. The method of claim 201, wherein m is 3, R2 is fluorinated alkenyl or fluorinated aryl.

235. The method of claim 234, wherein OR3 is methoxy or ethoxy.

236. The method of claim 235, wherein OR3 is ethoxy.

237. The method of claim 201, wherein the molar ratio of the compound of the general formula R14-mMOR3m-nXn to the compound of the general formula R2M1 is from 0.5:1 to 2:1.

238. The method of claim 201, wherein the compound of the general formula R14-mMOR3m-nXn is dissolved in ether.

239. The method of claim 201, wherein R14-mMOR3m-nXn is prepared by reacting R1X2+Mg+OR34M, wherein X2 is Br or I, if m is 2 or 3, to form R14-mMOR3m followed by reacting R14-mMOR3m with a halogen or halogen compound to form R14-mMOR3m-nXn.

240. The method of claim 239, wherein R1 is single or multi-ring aryl, single or multi-ring fully or partially fluorinated aryl, C5+alkyl, fully or partially fluorinated C5+alkyl.

241. The method of claim 239, wherein X2 is Br.

242. The method of claim 225, wherein m is 2.

243. The method of claim 242, further comprising performing a condensation reaction with the compound of the general formula R14-mMOR3m-nXn.

244. The method of claim 243, wherein the condensation reaction is performed with H2O or D2O.

245. The method of claim 244, wherein the condensation reaction forms an intermediate R14-mMOR3m-n(OD)n or R14-mMOR3m-n(OH)n.

246. The method of claim 245, wherein a material is formed with a repeating —M—O—M—O— backbone having R2 and R1 substituents on each M and the material having a molecular weight of from 500 to 10000.

247. The method of claim 246, wherein the molecular weight is from 1500 to 5000.

248. The method of claim 201, wherein R2 and R1 are fully fluorinated.

249. The method of claim 244, wherein the condensation reaction is performed with D2O.

250. The method of claim 201, wherein either R2 or R1 is an aryl group that is a single ring or polycyclic aromatic substituent.

251. The method of claim 250, wherein either R2 or R1 is a fully or partially fluorinated single ring or polycyclic aromatic substituent.

252. The method of claim 251, wherein either R2 or R1 has one or two rings.

253. The method of claim 246, further comprising spinning on the material having a molecular weight of from 500 to 10000 onto a substrate.

254. The method of claim 253, further comprising heating the material on the substrate or exposing the material on the substrate to electromagnetic radiation or an electron beam.

255. The method of claim 254, wherein the material is exposed to an electron beam or to electromagnetic radiation via a mask so as to selectively further cross link the material and increase the molecular weight of the material in selected areas.

256. The method of claim 255, further comprising removing non-exposed material with a developer.

257. The method of claim 256, wherein the developer is selected from methanol, ethanol, propanol, acetone, methyl isobutyl ketone, Dow Chemical DS2100, Dow Chemical DS3000, diluted nitric acid, hydrochloric acid, sulfuric acid, HF, aqueous NaOH or KOH solutions.

258. The method of claim 253, wherein the material is spun on after mixing with a solvent.

259. The method of claim 258, wherein the solvent is selected from isopropanol, ethanol, methanol, THF, mesitylene, toluene, cyclohexanone, cyclopentanone, dioxane, methyl isobutyl ketone, or perfluorinated toluene.

260. The method of claim 201, wherein M is Si.

261. The method of claim 258, wherein the material is mixed with a solvent and photoinitiator prior to spin on.

262. The method of claim 261, wherein the photoinitiator is selected from Irgacure 184, Irgacure 500, Irgacure 784, Irgacure 819, Irgacure 1300, Irgacure 1800, Darocure 1173 or Darocure 4265, 1,4-bis(pentafluorobenzoyl)benzene or Rhodosil 2074.

263. The method of claim 258, wherein after spin-on, the material is patterned and, along with at least one additional layer deposited on the substrate, formed into a component for an optical device.

264. The method of claim 201, wherein R14-mMOR3m and R2M1 are mixed at a temperature less than −40 C.

265. The method of claim 264, wherein R14-mMOR3m and R2M1 are mixed at a temperature of between −50 and −100 C.

266. The method of claim 264, wherein R14-mMOR3m and R2M1 are mixed in an ether and brought to a temperature over 0 C. during a period of four hours or more.

267. The method of claim 266, wherein R14-mMOR3m and R2M1 are brought to room temperature overnight.

268. The method of claim 201, wherein R2 is an aryl group having a single ring or a multi ring structure.

269. The method of claim 268, wherein the single ring or multi ring structure is substituted with one or more groups selected from alkyl, alkenyl and/or alkynyl.

270. The method of claim 269, wherein the one or more substituent groups on the single or multi-ring aryl is at least partially fluorinated.

271. The method of claim 216, wherein NU is Ge, Al or Sn.

272. The method of claim 201, wherein m is 4.

273. The method of claim 201, wherein m is 3.

274. The method of claim 201, wherein n is 0.

275. The method of claim 201, wherein R1 is nonfluorinated allyl or vinyl.

276. The method of claim 275, wherein R1 is nonfluorinated methyl of vinyl.

277. The method of claim 201, further comprising hydrolyzing and condensing R2MR13-nOR3n, alone or with another compound of the same formula where M or the R groups are different, so as to form a cross linked material comprising a three dimensional network of M and oxygen atoms with the M atoms having R1 and/or R2 substituents.

278. The method of claim 277, further comprising depositing the cross linked material on a substrate.

279. The method of claim 278, wherein the depositing is by dip coating, spraying or spin coating.

280. The method of claim 279, wherein the substrate is a glass, quartz or semiconductor substrate.

281. The method of claim 279, wherein the substrate is a printed circuit board.

282. The method of claim 278, further comprising providing one or more light emittors or photodetectors on the substrate before or after depositing the cross linked material.

283. The method of claim 278, further comprising exposing the deposited material to electromagnetic radiation or an electron beam to further cross link the material.

284. The method of claim 283, wherein the exposure to electromagnetic radiation is via a mask so as to expose a portion of the material and leave a remaining portion unexposed.

285. The method of claim 284, wherein the unexposed portion of the material is removed with a developer.

286. The method of claim 201, wherein R1 is a fully or partially fluorinated or nonfluorinated alkenyl or alkynyl group.

287. The method of claim 201, wherein R1 is a fully or partially fluorinated or nonfluorinated vinyl or allyl group.

288. The method of claim 201, wherein R1 is a fully or partially fluorinated alkenyl group.

289. The method of claim 1, wherein R2 is a fully or partially fluorinated alkenyl group.

290. The method of claim 201, wherein R1 is a 4 to 8 sided ring structure.

291. The method of claim 290, wherein the 4 to 8 sided ring structure comprises N, S or O.

292. The method of claim 290, wherein R1 is a 5 or 6 sided ring structure.

293. The method of claim 292, wherein R2 is a fully or partially fluorinated phenyl or fluorinated C1—C5 alkyl group.

294. The method of claim 293, wherein the fully or partially fluorinated phenyl group of R2 is substituted with fully or partially fluorinated methyl, vinyl or ethyl groups.

295. The method of claim 201, further comprising purifying R2MR14-mOR3m-1.

296. The method of claim 201, wherein R1 or R2 is an epoxy group.

297. The method of claim 201, wherein R1 or R2 comprises a ring structure or double bond capable of degradation in the presence of an electron beam or in the presence of a photoinitiator and electromagnetic energy.

298. The method of claim 201, wherein m=4 and n=1, such that MOR33X is reacted with R2M1 to form R2MOR33.

299. The method of claim 201, wherein m=3 and n=1, such that R1MOR32X is reacted with R2M1 to form R2MR1OR32.

300. The method of claim 201, wherein n=2.

301. A method comprising: providing a compound R14-qMOR3q where M is an element selected from group 14 of the periodic table , OR3 is an alkoxy group, R1 is an alkyl, alkenyl, aryl or alkynyl, and q is from 2 to 4; reacting the compound R14-qMOR3q with either a) Mg and R2X2 where X2 is Cl, Br or I and R2 is an alkyl, alkenyl, aryl or alkynyl group, and wherein R2 is fully or partially fluorinated, or b) with R2M1 where R2 is an alkyl, alkenyl, aryl or alkynyl group and wherein R2 is fully or partially fluorinated and M1 is an element from group 1 of the periodic table; so as to replace one of the OR3 groups in R14-qMOR3q so as to form R14-qMOR3q-1.

302. The method of claim 301, further comprising: reacting R14-qR2MOR3q-1 with either a) Mg and R4X2 where X2 is Cl, Br or I and R4 is an alkyl, alkenyl, aryl or alkynyl group, and wherein R4 is fully or partially fluorinated, or b) with R4M1 where R4 is an alkyl, alkenyl, aryl or alkynyl group and wherein R4 is partially or fully fluorinated and M1 is an element from group 1 of the periodic table; so as to replace another of the OR3 groups in R14-qR2MOR3q-1 so as to form R14-qR2R4MOR3q-2.

303. The method of claim 301, wherein q is 4.

304. The method of claim 301, wherein q is 3.

305. The method of claim 301, wherein R14-qMOR3q is reacted with Mg and R2X2 to form R14-qR2MOR3q-1.

306. The method of claim 305, wherein R14-qR2MOR3q-1 is reacted with Mg and R4X2 to form R14-qR2R4MOR3q-2.

307. The method of claim 305, wherein R14-qR2MOR3q-1 is reacted with R4M1 so as to form R14-qR2R4MOR3q-2.

308. The method of claim 301, wherein R14-qMOR3q is reacted with R1M1 to form R14-qR2MOR3q-1.

309. The method of claim 308, wherein R14-qR2MOR3q-1 is reacted with Mg and R4X2 to form R14-qR2R4MOR3q-2.

310. The method of claim 308, wherein R14-qR2MOR3q-1 is reacted with R4M1 so as to form R14-qR2R4MOR3q-2.

311. The method of claim 301, further comprising reacting R14-qR2R4MOR3q-2 with a halogen or halide compound so as to form R14-qR2R4MX3q-2 where X3 is a halogen.

312. The method of claim 311, wherein q is 4, such that R2R4MOR32 is reacted with the halogen or halide compound so as to form R2R4MX32.

313. The method of claim 312, wherein R2R4MX32 is hydrolyzed with H2O or D2O so as to form a compound having a repeating —M—O—M—O three dimensional network backbone with R2 and R4 groups on each M group.

314. The method of claim 313, wherein at least one of R2 and R4 is an alkenyl or aryl group.

315. The method of claim 313, wherein at least one of R2 and R4 is an acrylate, methacrylate, allyl, epoxy or vinyl group.

316. The method of claim 301, wherein q is 4 and further comprising reacting R2MOR33 with a halogen or halide compound so as to form R2MX33 where X3 is a halogen.

317. The method of claim 316, further comprising condensing R2MX33 with R5MX33 where R5 is an alkyl alkenyl, aryl or alkynyl, M is an element selected from group 14 of the periodic table, and X3 is a halogen, in the presence of D2O or H2O so as to form a compound having a repeating —M—O—M—O three dimensional network backbone with R2 and R5 groups on alternating M groups.

318. The method of claim 317 wherein at least one of R2 and R5 is an alkenyl, aryl or alkynyl group.

319. The method of claim 318, wherein the other of R2 and R5 is an aryl or alkyl group having 4 or more carbons and where R2 and R5 are not the same.

320. The method of claim 317, the compound R5MX33 is formed by reacting the compound MOR34 with either a) Mg and R5X2 where X2 is Cl, Br or I, or b) with R5M1 where and M1 is an element from group 1 of the periodic table; so as to replace one of the OR3 groups in MOR34 so as to form R5MX33.

321. The method of claim 302, wherein q is 4 and further comprising reacting R2R4MOR32 with a halogen or halide compound so as to form R2R4MX32 where X3 is a halogen.

322. The method of claim 321, further comprising condensing R2R4MX32 with R5MX33 where R5 is an alkyl, alkenyl, aryl or alkynyl, M is an element selected from group 14 of the periodic table, and X3 is a halogen, in the presence of D2O or H2O so as to form a compound having a repeating —M—O—M—O three dimensional network backbone with R2 and R4 groups on a portion of the M groups and R5 groups on another portion of the M groups.

323. The method of claim 322, wherein at least one of R2, R4 and R5 is an alkenyl, alkynyl or aryl group.

324. The method of claim 323, wherein R2 and R4 are the same as each other but different from R5, and R5 is an alkenyl, alkynyl or aryl group.

325. The method of claim 321, further comprising condensing R2R4MX32 with R5R6MX32 where R5 and R6 are separately an alkyl, alkenyl, aryl or alkynyl, M is an element selected from group 14 of the periodic table, and X3 is a halogen, in the presence of D2O or H2O so as to form a compound having a repeating —M—O—M—O three dimensional network backbone with R2 and R4 groups on a portion of the M groups and R5 and R6 groups on another portion of the M groups.

326. The method of claim 301, wherein R1 or R2 is an epoxy group.

327. The method of claim 307, wherein R14-qR2MOR3q-1 is first reacted with a halogen or halide compound to form R14-qR2X3MOR3q-2 where X3 is a halogen, prior to reacting with R4M1 so as to form R14-qR2R4MOR3q-2.

328. The method of claim 308, wherein R14-qMOR3q is first reacted with a halogen or halide compound to form R14-qX3MOR3q-1 before being reacted with R2M1 to form R14-qR2MOR3q-1.

329. The method of claim 310, wherein R14-qR2MOR3q-1 is first reacted with a halogen or halide compound to form R14-qR2X3MOR3q-2 prior to being reacted with R4M1 so as to form R14-qR2R4MOR3q-2.

330. The method of claim 313, wherein cross linking between —M—O—M—O— chains is via a straight or branched carbon chain.

331. The method of claim 330, wherein the cross linking is via a fully fluorinated carbon chain or fully fluorinated cyclobutane group.

332. The method of claim 301, wherein the compound R14-qMOR3q is R1MOR33 that is formed by reacting the compound MOR34 with either a) Mg and R1X2 where X2 is Cl, Br or I and R2 is an alkyl, alkenyl, aryl or alkynyl group, or b) with R1M1 where R2 is an alkyl, alkenyl, aryl or alkynyl group and M1 is an element from group 1 of the periodic table; so as to replace one of the OR3 groups in MOR34 so as to form R1MOR33.

333. The method of claim 301, wherein R1 is nonfluorinated, partially fluorinated or fully fluorinated, and wherein R2 is fully or partially fluorinated.

334. The method of claim 333, wherein R1 is fully or partially fluorinated.

335. The method of claim 334, wherein both R1 and R2 are fully fluorinated.

336. The method of claim 301, wherein R1 and/or R2 comprise an inorganic element or moiety within a predominantly organic substituent.

337. The method of claim 301, wherein M1 is Na, Li or K.

338. The method of claim 301, wherein R1 or R2 comprises a double bond.

339. The method of claim 301, wherein R2 is a C1-10 alkyl, vinyl or allyl group.

340. The method of claim 301, wherein R1 is a fully or partially fluorinated or nonfluorinated alkenyl group.

341. The method of claim 301, wherein R1 is a single ring aryl, multi-ring aryl, or alkyl group having 1 or more carbons.

342. The method of claim 341, wherein the single ring aryl, multi-ring aryl, or alkyl group of R1 is fully or partially fluorinated.

343. The method of claim 342, wherein the aryl, multi-ring aryl, or alkyl group of R1 is fluorinated.

344. The method of claim 343, wherein R1 is a fully or partially fluorinated phenyl or fluorinated C1—C5 alkyl group.

345. The method of claim 344, wherein the fully or partially fluorinated phenyl group of R1 is substituted with fully or partially fluorinated methyl, vinyl or ethyl groups.

346. The method of claim 301, wherein OR3 is C1—C4 alkoxy.

347. The method of claim 301, wherein M is Si, Ge, Al or Sn.

348. The method of claim 301, wherein R2 is a C2+straight chain or C3+branched chain.

349. The method of claim 301, wherein q is 3.

350. The method of claim 301, wherein M1 is Na or Li.

351. The method of claim 301, wherein R14-qMOR3q is first reacted with a halogen or halide compound so as to form a compound of the general formula R14-qMOR3q-1X4 where X4 is a halogen, followed by reaction with the R2M1 to form R14-qR2MOR3q-1.

352. The method of claim 351, wherein X4 is Br or Cl.

353. The method of claim 351, wherein the halogen or halide compound is hydrobromic acid, thionylbromide, hydrochloric acid, chlorine, thionylchloride or sulfurylchloride.

354. The method of claim 329, wherein the halogen or halide compound is reacted with R14-qMOR3q in the presence of a catalyst.

355. The method of claim 354, wherein the catalyst is pyridinium hydrochloride.

356. The method of claim 301, wherein q is 3 or 4, R2 is fluorinated alkyl, R1 is fluorinated aryl or C5+alkyl and OR3 is C1—C4 alkoxy.

357. The method of claim 356, wherein R2 is fluorinated vinyl and R1 is fluorinated phenyl.

358. The method of claim 301, wherein q is 3, and R2 is fluorinated alkenyl or fluorinated aryl.

359. The method of claim 301, wherein R14-qMOR3m is prepared by reacting R1X2+Mg+OR34M, wherein X2 is Br or I, if m is 2 or 3.

360. The method of claim 339, wherein R1 is single or multi-ring aryl single or multi-ring fully or partially fluorinated aryl, C1-4 alkyl, or fully or partially fluorinated C1-4 alkyl.

361. The method of claim 359, wherein X2 is Br.

362. The method of claim 301, wherein q=3 or 4 and further comprising reacting R1R2MOR32 or R2MOR33 with a halogen or halide compound having X6 as a halogen so as to replace one or more OR3 groups with X6 groups so as to form R1R2MX62, R1R2MOR3X6, or R2MOR32X6, R2MX62OR3, R2MX63.

363. A method comprising: reacting a compound of the general formula XaR1MOR32R4 where a is from 1 to 3, X is a halogen bound to R1, R1 is an organic group selected from aryl, alkyl, alkenyl or alkynyl, OR3 is an alkoxy, and R4 is either an alkoxy group or an organic group selected from aryl, alkyl, alkenyl or alkynyl; with R2M1 where M1 is selected from group 1 of the periodic table and R2 is an organic group preferably selected from aryl, alkyl, alkenyl and alkynyl; so as to form a compound of the general formula R2aR1MOR32R4.