This application claims priority to and the benefit of India Patent Application Serial No. 1798/CHE/2014, filed Apr. 3, 2014, which is incorporated herein by reference in its entirety.
This application is related to (1) U.S. application Ser. No. 14/336,931, filed Jul. 21, 2014, entitled “Efficient Cache Utilization in a Tiered Data Structure,” (2) U.S. application Ser. No. 14/336,949, filed Jul. 21, 2014, entitled “Conditional Updates for Reducing Frequency of Data Modification Operations,” (3) U.S. application Ser. No. 14/336,967, filed Jul. 21, 2014, entitled “Compaction of Information in Tiered Data Structure,” (4) U.S. Provisional Application Ser. No. 61/973,215, filed Mar. 31, 2014, entitled “Methods and Systems for Efficient Non-Isolated Transactions,” and (5) U.S. Provisional Application Ser. No. 61/973,221, filed Mar. 31, 2014, entitled “Methods and Systems for Insert Optimization of Tiered Data Structures,” all of which are incorporated herein by reference in their entireties.
The disclosed embodiments relate generally to memory systems, and in particular, to improving the performance and reliability of tiered data structures.
The speed of many computer operations is frequently constrained by the speed and efficiency with which data can be stored and retrieved from data structures associated with a device. Many conventional data structures take a long time to store and retrieve data. However, tiered data structures can be used to dramatically improve the speed and efficiency of data storage. Some tiered data structures enable data searches, data insertions, data deletions, and sequential data access to be performed in logarithmic time. However, further improvements to tiered data structures can further increase the speed, efficiency, and reliability with which data can be stored and retrieved, thereby improving the performance of devices relying on such tiered data structures.
Various implementations of systems, methods and devices within the scope of the appended claims each have several aspects, no single one of which is solely responsible for the attributes described herein. Without limiting the scope of the appended claims, after considering this disclosure, and particularly after considering the section entitled “Detailed Description” one will understand how the aspects of various implementations are used to improving the performance and reliability of tiered data structures.
So that the present disclosure can be understood in greater detail, a more particular description may be had by reference to the features of various implementations, some of which are illustrated in the appended drawings. The appended drawings, however, merely illustrate the more pertinent features of the present disclosure and are therefore not to be considered limiting, for the description may admit to other effective features.
In accordance with common practice the various features illustrated in the drawings may not be drawn to scale. Accordingly, the dimensions of the various features may be arbitrarily expanded or reduced for clarity. In addition, some of the drawings may not depict all of the components of a given system, method or device. Finally, like reference numerals may be used to denote like features throughout the specification and figures.
The various implementations described herein include systems, methods and/or devices used to improve the performance and reliability of tiered data structures.
Some embodiments include a method of managing a datastore storing one or more tiered data structures. In some embodiments, the method is performed by a memory controller (e.g., management module 140,
Some embodiments include a computer system or device (e.g., data storage system 100,
Numerous details are described herein in order to provide a thorough understanding of the example implementations illustrated in the accompanying drawings. However, some embodiments may be practiced without many of the specific details, and the scope of the claims is only limited by those features and aspects specifically recited in the claims. Furthermore, well-known methods, components, and circuits have not been described in exhaustive detail so as not to unnecessarily obscure more pertinent aspects of the implementations described herein.
Computer system 110 is coupled to storage controller 120 through data connections 101. However, in some embodiments computer system 110 includes storage controller 120 as a component and/or a sub-system. Computer system 110 may be any suitable computer device such as a computer, a laptop computer, a tablet device, a wearable computing device, a netbook, an internet kiosk, a personal digital assistant, a mobile phone, a smart phone, a gaming device, a computer server, or any other computing device. Computer system 110 is sometimes called a host or host system. In some embodiments, computer system 110 includes one or more processors, one or more types of memory, a display and/or other user interface components such as a keyboard, a touch screen display, a mouse, a track-pad, a digital camera and/or any number of supplemental devices to add functionality.
Storage medium 130 is coupled to storage controller 120 through connections 103. Connections 103 are sometimes called data connections, but typically convey commands in addition to data, and optionally convey metadata, error correction information and/or other information in addition to data values to be stored in storage medium 130 and data values read from storage medium 130. In some embodiments, however, storage controller 120 and storage medium 130 are included in the same device as components thereof. Furthermore, in some implementations storage controller 120 and storage medium 130 are embedded in a host device, such as a mobile device, tablet, other computer or computer controlled device, and the methods described herein are performed by the embedded storage controller. Storage medium 130 may include any number (i.e., one or more) of memory devices including, without limitation, non-volatile semiconductor memory devices, such as flash memory. For example, flash memory devices can be configured for enterprise storage suitable for applications such as cloud computing, or for caching data stored (or to be stored) in secondary storage, such as hard disk drives. Additionally and/or alternatively, flash memory can also be configured for relatively smaller-scale applications such as personal flash drives or hard-disk replacements for personal, laptop and tablet computers.
In some embodiments, storage medium 130 comprises persistent memory (e.g., non-volatile memory such as flash memory), and storage medium 130 includes a subset or a superset of the following data structures or data regions: persistent key-map 132; log stream 134; and datastore 136. In some embodiments, datastore 136 comprises one or more NVM devices such as magnetic disk storage device(s), optical disk storage device(s), flash memory device(s), 3D memory device(s) (as further described herein), or other non-volatile solid state storage device(s). Storage medium 130 and its included data structures or data regions (e.g., persistent key-map 132, log stream 134, and datastore 136) are described below in more detail with reference to
In some embodiments, storage medium 130 is divided into a number of addressable and individually selectable blocks (sometimes also herein called “slabs”). In some embodiments, the individually selectable blocks are the minimum size erasable units in a flash memory device. In other words, each block contains the minimum number of memory cells that can be erased simultaneously. Each block is usually further divided into a plurality of pages and/or word lines, where each page or word line is typically an instance of the smallest individually accessible (readable) portion in a block. In some embodiments (e.g., using some types of flash memory), the smallest individually accessible unit of a data set, however, is a sector, which is a subunit of a page. That is, a block includes a plurality of pages, each page contains a plurality of sectors, and each sector is the minimum unit of data for reading data from the flash memory device.
For example, one block comprises a predetermined number of pages, for example, 64 pages, 128 pages, 256 pages or another suitable number of pages. Blocks are typically grouped into a plurality of zones. Each block zone can be independently managed to some extent, which increases the degree of parallelism for parallel operations and simplifies management of storage medium 130.
In some embodiments, storage controller 120 includes a management module 140, an input buffer 123, an output buffer 124, an error control module 125 and a storage medium interface (I/O) 128. Storage controller 120 may include various additional features that have not been illustrated for the sake of brevity and so as not to obscure more pertinent features of the example embodiments disclosed herein, and that a different arrangement of features may be possible. Input buffer 123 and output buffer 124 provide an interface to computer system 110 through data connections 101. Similarly, storage medium I/O 128 provides an interface to storage medium 130 though connections 103. In some embodiments, storage medium I/O 128 includes read and write circuitry, including circuitry capable of providing reading signals to storage medium 130 (e.g., reading threshold voltages for NAND-type flash memory).
In some embodiments, management module 140 includes one or more processing units (CPU(s), also sometimes called one or more processors) 122 configured to execute instructions in one or more programs (e.g., stored in memory 302 (
Error control module 125 is coupled to storage medium I/O 128, input buffer 123 and output buffer 124. Error control module 125 is provided to limit the number of uncorrectable errors inadvertently introduced into data. In some embodiments, error control module 125 is executed in software by one or more CPUs 122 of management module 140, and, in other embodiments, error control module 125 is implemented in whole or in part using special purpose circuitry to perform encoding and decoding functions. To that end, error control module 125 includes an encoder 126 and a decoder 127. Encoder 126 encodes data by applying an error control code to produce a codeword, which is subsequently stored in storage medium 130.
When the encoded data (e.g., one or more codewords) is read from storage medium 130, decoder 127 applies a decoding process to the encoded data to recover the data, and to correct errors in the recovered data within the error correcting capability of the error control code. Those skilled in the art will appreciate that various error control codes have different error detection and correction capacities, and that particular codes are selected for various applications for reasons beyond the scope of this disclosure. As such, an exhaustive review of the various types of error control codes is not provided herein. Moreover, those skilled in the art will appreciate that each type or family of error control codes may have encoding and decoding algorithms that are particular to the type or family of error control codes. On the other hand, some algorithms may be utilized at least to some extent in the decoding of a number of different types or families of error control codes. As such, for the sake of brevity, an exhaustive description of the various types of encoding and decoding algorithms generally available and known to those skilled in the art is not provided herein.
During a write operation, input buffer 123 receives data to be stored in storage medium 130 from computer system 110 (e.g., write data). The data held in input buffer 123 is made available to encoder 126, which encodes the data to produce one or more codewords. The one or more codewords are made available to storage medium I/O 128, which transfers the one or more codewords to storage medium 130 in a manner dependent on the type of storage medium being utilized.
A read operation is initiated when computer system (host) 110 sends one or more host read commands on control line 111 to storage controller 120 requesting data from storage medium 130. Storage controller 120 sends one or more read access commands to storage medium 130, via storage medium I/O 128, to obtain raw read data in accordance with memory locations (addresses) specified by the one or more host read commands. Storage medium I/O 128 provides the raw read data (e.g., comprising one or more codewords) to decoder 127. If the decoding is successful, the decoded data is provided to output buffer 124, where the decoded data is made available to computer system 110. In some embodiments, if the decoding is not successful, storage controller 120 may resort to a number of remedial actions or provide an indication of an irresolvable error condition.
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For example, management module 140 receives, from computer system 110, a request to perform a transaction including two or more memory operations on datastore 136. In this example, a first memory operation includes replacing the value of a data object stored in datastore 136 that corresponds to key 77 with a new value. Continuing with this example, management module 140 locates the data object in datastore 136 associated with the first memory operation by mapping key 77 in non-persistent key-map 202 to location information pointing to or giving the location of the data object in datastore 136. For example, key 77, in non-persistent key-map 202, is mapped to an index number for a slab in datastore 136 that stores a leaf node that includes the data object corresponding to key 77.
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In some embodiments, data 229 includes one or more data objects included in the respective node. In some embodiments, a respective data object comprises key information and a corresponding value. In some embodiments, the key information includes a unique key or information from which a unique key can be identified such as a shortened key and a location/length of a key prefix. In some embodiments, the corresponding value is data. In some embodiments, the corresponding value is a pointer identifying a location where the data is stored. In some embodiments, the one or more data objects included in the respective node are contiguous data objects where the unique key information for a respective contiguous data object is adjacent or substantially adjacent to the corresponding value for the respective contiguous data object or other data for the respective contiguous data object that is adjacent to the corresponding value. In some embodiments, the one or more data objects included in the respective node are split data objects where the unique key information for a respective split data object is separated from the corresponding value for the respective split data object by other data for other data objects and the unique key information for the respective split data object is stored with a pointer that identifies a location of the corresponding value for the respective split data object.
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In some embodiments, records 230 each corresponds to a transaction that is associated with a transaction identifier. In some embodiments, a respective complete transaction corresponds to a first start transaction record in log stream 134 that includes a first transaction identifier and a first transaction commit record in log stream 134 that includes the first transaction identifier. In some embodiments, the respective complete transaction also corresponds to one or more operation commit records that include the first transaction identifier. In some embodiments, a respective incomplete transaction corresponds to a second start transaction record in log stream 134 that includes a second transaction identifier for which there is not a corresponding transaction commit record in log stream 134 that includes the second transaction identifier. In some embodiments, the respective incomplete transaction also corresponds to zero or more operation commit records that include the second transaction identifier.
In some embodiments, a respective start transaction record in log stream 134 includes a unique log sequence number and a transaction identifier (e.g., corresponding to the transaction to which the respective start transaction record belongs). In some embodiments, a respective transaction commit record in log stream 134 includes a unique log sequence number and a transaction identifier (e.g., corresponding to the transaction to which the respective transaction commit record belongs).
In some embodiments, a first example operation commit record in log stream 134, that corresponds to a replacement operation of a first data object, includes a unique log sequence number, a transaction identifier (e.g., corresponding to the transaction to which the first operation commit record belongs), key information corresponding to the first data object, a pointer to the old location of the first data object in datastore 136 (e.g., the slab storing the leaf node with the old first data object prior to the replacement operation), and a pointer to the new location of the first data object in datastore 136 (e.g., the slab storing the leaf node with the new first data object after the replacement operation). In some embodiments, a second example operation commit record in log stream 134, that corresponds to a deletion operation of a second data object, includes a unique log sequence number, a transaction identifier (e.g., corresponding to the transaction to which the second operation commit record belongs), key information corresponding to the second data object, a pointer to the old location of the second data object (e.g., the slab storing the leaf node with the old second data object prior to the deletion operation), and a pointer to a new location in datastore 136 (e.g., the slab storing the leaf node with the new second data object with a tombstone after the deletion operation). In some embodiments, a third example operation commit record in log stream 134, that corresponds to an insertion operation of a third data object, includes a unique log sequence number, a transaction identifier (e.g., corresponding to the transaction to which the third operation commit record belongs), key information corresponding to the third data object, a pointer to old location of the third data object in datastore 136 (e.g., the slab storing the leaf node with the new third data object after the insertion operation).
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Each of the above identified elements may be stored in one or more of the previously mentioned memory devices, and corresponds to a set of instructions for performing a function described above. The above identified modules or programs (i.e., sets of instructions) need not be implemented as separate software programs, procedures or modules, and thus various subsets of these modules may be combined or otherwise re-arranged in various embodiments. In some embodiments, memory 302 may store a subset of the modules and data structures identified above. Furthermore, memory 302 may store additional modules and data structures not described above. In some embodiments, the programs, modules, and data structures stored in memory 302, or the computer readable storage medium of memory 302, provide instructions for implementing respective operations in the methods described below with reference to
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Navigating the tiered data structure typically, but optionally, relies on the assumption that keys are always sorted in a predefined key order (e.g., monotonically ascending), so that a node that is associated with data having keys between a first value and a second value is associated with all data in the tiered data structure that has keys between the first value and the second value. In some embodiments, each leaf node has a maximum size and when the leaf node exceeds the maximum size, the leaf node is split into two leaf nodes. In some embodiments, each leaf node has a minimum size and when a leaf node is below the minimum size, the leaf node is combined with one or more other leaf nodes. In some embodiments, each non-leaf node (e.g., root node or internal node) has a maximum number of child nodes, and when splitting of a leaf node results in a non-leaf node having more than the maximum number of child nodes, the non-leaf node is split to accommodate the extra child nodes. In some embodiments, each non-leaf node (e.g., root node or internal node) has a minimum number of child nodes, and when a combining two or more leaf nodes results in a non-leaf node having less than the minimum number of child nodes, the non-leaf node is combined with one or more other non-leaf nodes to accommodate the reduced number of child nodes. The tiered data structure may additionally conform to some or all of the rules associated with B−Trees, B+Trees, B*Trees or other tiered data structures.
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While the preceding examples have been shown with a small number of data objects and nodes, it should be understood that in a typical cache, a much larger number of data objects and nodes are stored in the cache and similar processes are performed. For example, in an 2 GB DRAM cache with a 1 GB data object cache portion, a 1 GB node cache portion, an average node size of 8 KB and an average data object size of 1 KB, the data object cache portion would hold approximately 1 million data objects and the node cache portion would hold approximately 250,000 nodes. In some embodiments, only internal nodes 404 are cached in node cache portion 214. In some embodiments, root node 402 and leaf nodes 406 are cached in node cache portion 214, but most leaf nodes are quickly evicted from node cache portion 214, while internal nodes 404 are frequently used and are thus frequently refreshed in cache 206, so that node cache portion 214 includes primarily internal nodes 404 during normal operation (e.g., 50% or more of the capacity of node cache portion 214 is occupied by internal nodes). Using a data object cache in addition to a node cache instead of solely using a node cache improves the performance of the cache by increasing the likelihood that a requested data object will be available from the cache. For example, using a 1 GB data object cache in addition to a 1 GB node cache approximately quadruples the object capacity of the cache as compared with a 2 GB node cache.
The data objects (e.g., DO59, DO60, DO61, DO63, DO66) in leaf node 406-4 each include unique key information (e.g., K59, K60, K61, K63, K66, respectively) and a corresponding value (e.g., V59, V60, V61, V63, V66, respectively). In some embodiments, the unique key information for some of the data objects is a full unique key for the data objects, while the unique key information for other data objects is a portion of a unique key for the data objects, and the metadata for these data objects indicates a location of a key prefix that is shared with one or more other data objects that can be used to recreate the unique key for the data object in combination with the unique key information stored with the data object. For example, data object 59 includes a full unique key in unique key information K59, while data object 60 includes a partial key in unique key information K60 and metadata M60 associated with data object 60 is used to identify a location of a key prefix (e.g., a portion of K59 that serves as a key prefix for data object 60 and, in combination with unique key information K60 can be used to determine a unique key for data object 60). Similarly, data object 61 includes a partial key in unique key information K61 and metadata M61 associated with data object 61 is used to identify a location of a key prefix (e.g., a portion of K59 that serves as a key prefix for data object 61 and, in combination with unique key information K61 can be used to determine a unique key for data object 61).
Metadata (e.g., M59, M60, M61, M63, and M66) for a corresponding data object optionally includes one or more of the following: key length information 434 indicating a length of unique key information associated with the corresponding data object; data length information 436 indicating a length of the corresponding data object or the value of the corresponding data object; prefix offset information 438 that indicates a location of a start of a key prefix for the corresponding data object; prefix length information 440 that indicates a length of the key prefix for the corresponding data object; data overflow pointer 442 that indicates a location of data for the corresponding data object that is too large to fit in the leaf node; and global version information 444 that indicates a version of the corresponding data object. In some embodiments, global version information 444 includes information identifying the order of each change to data objects in tiered data structure 400 (
In some embodiments different data objects have different types of metadata with different lengths, sometimes called variable-length metadata. Using variable length metadata enables shorter metadata to be used in many situations, and using shorter metadata increases the number of data objects that can be stored in a leaf node. As one example, there are four types of metadata, type-0 metadata, type-1 metadata, type-2 metadata and type-3 metadata. Type-0 metadata is used when the data object has the same key prefix, key length, and data length as the preceding data object, in which case the metadata includes only global version information 444 (e.g., represented as a 64-bit unsigned integer), and other information such as key prefix location, data length and key length are determined by looking at the metadata corresponding to the preceding data object. Type-1 metadata is used when the data object has a key length and data length that can each fit in a single byte and data that fits in the leaf node, in which case the metadata includes key length information 434 (e.g., represented as an 8-bit unsigned integer), data length information 436 (e.g., represented as an 8-bit unsigned integer), prefix offset information 438 (e.g., represented as a 16-bit unsigned integer), prefix length information 440 (e.g., represented as an 8-bit unsigned integer), and global version information 444 (e.g., represented as a 64-bit unsigned integer). Type-2 metadata is used when the data object has a key length and data length that can each fit in two bytes, in which case the metadata includes key length information 434 (e.g., represented as a 16-bit unsigned integer), data length information 436 (e.g., represented as a 16-bit unsigned integer), prefix offset information 438 (e.g., represented as a 16-bit unsigned integer), prefix length information 440 (e.g., represented as a 16-bit unsigned integer), data overflow pointer 442 (e.g., represented as a 64-bit unsigned integer), and global version information 444 (e.g., represented as a 64-bit unsigned integer). Type-3 metadata is used for data objects that do not fit in the other categories, in which case the metadata includes key length information 434 (e.g., represented as a 32-bit unsigned integer), data length information 436 (e.g., represented as a 32-bit unsigned integer), prefix offset information 438 (e.g., represented as a 16-bit unsigned integer), prefix length information 440 (e.g., represented as a 32-bit unsigned integer), data overflow pointer 442 (e.g., represented as a 64-bit unsigned integer), and global version information 444 (e.g., represented as a 64-bit unsigned integer). Type-3 metadata is the most flexible metadata type, but is also the largest of these four metadata types. Enabling the use of other types of metadata (e.g., type-0, type-1, or type-2) saves space in the leaf node when type-3 metadata is not needed to store all of the relevant metadata for a data object. While the example above describes four types of metadata, the principles described above (e.g., using a shorter formats for metadata where the shorter format enables all of the necessary metadata information to be conveyed by the shorter metadata) would apply equally to other types of metadata and thus, in principle, any number of types of metadata could be used in an analogous manner.
In some situations one or more data objects are updated without adding or deleting a data object from leaf node 406-4. However, even though a data object has not been added or deleted, updating a data object will, in some circumstances change a size of the data object (e.g., by changing a type of metadata used by the data object to a smaller or larger size of metadata or by changing a length of the data to a smaller or larger length). The change in the data object or associated metadata will, in many circumstances, change locations of data objects, metadata and headers relative to the locations from which offsets identifying locations of these elements are measured, and thus after a data object or metadata has been updated, management module 140 updates the offset information in the header and metadata corresponding to one or more of the other data objects.
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In some embodiments, management module 140 receives from a requestor (e.g., computer system 110,
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In state 534, leaf node 506-1 includes: data object 512-1 corresponding to (key 1-sequence number 1) with value (V1); new data object 512-9 corresponding to (key 2-sequence number 9) with value (V9); data object 512-2 corresponding to (key 2-sequence number 2) with value (V2); and data object 512-3 corresponding to (key 3-sequence number 3) with value (V3). State 534 indicates that new data object 512-9 was inserted to the left of data object 512-2 (i.e., reverse key order).
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In state 536, internal node 504-2 includes: (key 2-sequence number 9) pointing to rightmost data object 512-9 in leaf node 506-4; (key 3-sequence number 3) pointing to rightmost data object 512-3 in leaf node 506-5; (key 5-sequence number 5) pointing to rightmost data object 512-5 in leaf node 506-2; and (key 8-sequence number 8) pointing to rightmost data object 512-8 in leaf node 506-3. In state 536, leaf node 506-4 includes: new data object 512-10 corresponding to (key 1-sequence number 10) with value (V10); data object 512-1 corresponding to (key 1-sequence number 1) with value (V1); and data object 512-9 corresponding to (key 2-sequence number 9) with value (V9). In state 536, leaf node 506-5 includes: data object 512-2 corresponding to (key 2-sequence number 2) with value (V2); and data object 512-3 corresponding to (key 3-sequence number 3) with value (V3). State 536 indicates that new data object 512-10 was inserted to the left of data object 512-1 (i.e., reverse key order).
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In state 538, internal node 504-3 includes: (key 2-sequence number 11) pointing to rightmost data object 512-11 in leaf node 506-4; (key 3-sequence number 3) pointing to rightmost data object 512-3 in leaf node 506-5; (key 5-sequence number 5) pointing to rightmost data object 512-5 in leaf node 506-2; and (key 8-sequence number 8) pointing to rightmost data object 512-8 in leaf node 506-3. In state 538, leaf node 506-4 includes: data object 512-10 corresponding to (key 1-sequence number 10) with value (V10); data object 512-1 corresponding to (key 1-sequence number 1) with value (V1); and new data object 512-11 corresponding to (key 2-sequence number 11) with value (V11).
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In state 542, leaf node 506-4 includes: data object 512-10 corresponding to (key 1-sequence number 10) with value (V10); data object 512-1 corresponding to (key 1-sequence number 1) with value (V1); new data object 512-12 corresponding to (key 2-sequence number 12) with a tombstone; and data object 512-11 corresponding to (key 2-sequence number 11) with value (V11). State 542 indicates that new data object 512-12 was inserted to the left of data object 512-11 (i.e., reverse key order).
In some embodiments, in response to receiving a request from the requestor (e.g., computer system 110,
In some embodiments, when the request does not specify one or more snapshots, management module 140 performs the cleanup process as to an oldest or all snapshots included in snapshot metadata 138.
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In state 544, internal node 504-4 includes: (key 3-sequence number 3) pointing to rightmost data object 512-3 in leaf node 506-6; (key 5-sequence number 5) pointing to rightmost data object 512-5 in leaf node 506-2; and (key 8-sequence number 8) pointing to rightmost data object 512-8 in leaf node 506-3. In state 544, snapshot metadata 138 includes no snapshot entries, and leaf node 506-6 includes: data object 512-10 corresponding to (key 1-sequence number 10) with value (V10); and data object 512-3 corresponding to (key 3-sequence number 3) with value (V3).
Attention is now directed to
In some embodiments, method 600 is performed in a data storage system (e.g., data storage system 100,
The memory controller detects (602) a request to perform an update operation of a first data object in a tiered data structure of the one or more tiered data structures stored in the datastore, the request includes first key information (e.g., a unique key or information from which a unique key can be identified such as a shortened key and a location/length of a key prefix) corresponding to the first data object and a new value for the first data object. In some embodiments, the corresponding value is data. In some embodiments, the corresponding value is a pointer identifying a location where the data is stored. In some embodiments, the data objects are contiguous data objects where the unique key information for a respective contiguous data object is adjacent or substantially adjacent to the corresponding value for the respective contiguous data object or other data for the respective contiguous data object that is adjacent to the corresponding value. In some embodiments, the data objects are split data objects where the unique key information for a respective split data object is separated from the corresponding value for the respective split data object by other data for other data objects and the unique key information for the respective split data object is stored with a pointer that identifies a location of the corresponding value for the respective split data object. For example, prior to state 534 in
The memory controller locates (604) the first data object using a key-map to map the first key information to a location of the first data object in the datastore. In some embodiments, management module 140 locates the first data object by mapping the first key information to location information in non-persistent key-map 202. In some embodiments, the located first data object is a data object corresponding to the first key information with the highest sequence number. In some embodiments, the location information is the location of the data object in datastore 136, a pointer to the location of the data object in datastore 136, or the location of a slab in datastore 136 storing a leaf node of a respective TDS of the one or more tiered data structures stored in datastore 136 that includes the first data object. For example, with reference to
The memory controller identifies (606) a sequence number associated with the first data object. In
In accordance with a first determination (608) that the sequence number associated with the first data object is greater than a first boundary sequence number corresponding to a first snapshot of the tiered data structure, the memory controller: replaces (610) the first data object in the tiered data structure with a modified first data object including the first key information and the new value; and assigns (612) the modified first data object a unique sequence number. In some embodiments, the boundary sequence number is the highest sequence number associated with the snapshot entries in snapshot metadata 138. In some embodiments, when a snapshot is performed on a respective TDS, the sequence number of the snapshot is the highest sequence number assigned to a data object in the respective TDS at the time the snapshot was performed. In some embodiments, when the snapshot is performed on two or more tiered data structures stored in datastore 136, the sequence number of the snapshot is the highest sequence number assigned to a data object in the two or more tiered data structures at the time the snapshot was performed. In
In some embodiments, when the first data object is not locked in one of the snapshots, the first data object is replaced or updated in-place. In some embodiments, the first data object is replaced by a modified first data object that includes the new value. However, in some other embodiments, the first data object is not replaced by the modified first data object and, instead, the first data object is updated to include the new value. In
In some embodiments, in accordance with the first determination, the memory controller stores (614) the modified first object in the respective leaf node of the tiered data structure in a first manner corresponding to a sorting scheme associated with the key information. In
In some embodiments, the first boundary sequence number corresponds to (616) a highest sequence number assigned to a data object in the tiered data structure prior to the first snapshot. In some embodiments, the boundary sequence number is the highest sequence number associated with the snapshot entries in snapshot metadata 138. In some embodiments, when a snapshot is performed on a respective TDS, the sequence number of the snapshot is the highest sequence number assigned to a data object in the respective TDS at the time the snapshot was performed. In some embodiments, when the snapshot is performed on two or more tiered data structures stored in datastore 136, the sequence number of the snapshot is the highest sequence number assigned to a data object in the two or more tiered data structures at the time the snapshot was performed.
In some embodiments, the memory controller stores (618) snapshot metadata in a respective leaf node of the tiered data structure, the snapshot metadata includes the first boundary sequence number, corresponding to one or more snapshots (e.g., including the first snapshot) of the tiered data structure. In some embodiments, a snapshot is performed on one or more specified tiered data structures or all of the one or more tiered data structures stored in datastore 136. In some embodiments, snapshot metadata 138 stores a snapshot entry for each snapshot of the one or more tiered data structures stored in datastore 136. A respective snapshot entry for a snapshot in snapshot metadata 138 includes a sequence number of the snapshot, a timestamp of the snapshot (e.g., indicating the time the snapshot was performed or the time the snapshot entry was created), and a version number of the snapshot. In some embodiments, the respective snapshot entry also includes an indication of the one or more tiered data structures on which the snapshot was performed. In some embodiments, snapshot metadata 138 is located in a specified node with a well-known ID of one of the one or more tiered data structures stored in datastore 136. In this way, the node comprising snapshot metadata 138 is not (or is infrequently) evicted from cache 206, and the node comprising snapshot metadata 138 is accessed every time the tiered data structure is read from or written to. Alternatively, in some embodiments, each of the one or more tiered data structures stored in datastore 136 includes a node with a well-known ID that stores snapshot metadata corresponding to snapshots of the respective TDS.
In accordance with a second determination (620) that the sequence number associated with the first data object is less than or equal to the first boundary sequence number corresponding to the first snapshot of the tiered data structure, the memory controller: inserts (622) a second data object into the tiered data structure while maintaining the first data object in the tiered data structure, the second data object including the first key information and the new value; and assigns (624) the second data object the unique sequence number. In this embodiment, when the first data object is locked in one of the snapshots, a second data object that includes the new value is inserted into the TDS. In
In some embodiments, in accordance with the second determination, the memory controller stores (626) the second data object in the respective leaf node in a second manner that is substantially opposite to the first manner. In
In some embodiments, after assigning the modified first object or the second data object the unique sequence number, the memory controller performs (628) a second snapshot of the tiered data structure, where the snapshot is associated with a second boundary sequence number different from the first boundary sequence number.
In some embodiments, the memory controller determines (630) whether one or more requests to perform memory operations on the tiered data structure are complete, where the one or more requests include the request to perform the update operation. In some embodiments, management module 140 or a component thereof (e.g., snapshot module 348,
In some embodiments, the memory controller detects (632) a trigger to perform a cleanup process as to one or more snapshots. In some embodiments, the cleanup process is triggered according to a predefined schedule, by an event, or on-demand by a request from a requestor (e.g., computer system 110,
In some embodiments, in response to detecting the trigger, the memory controller performs (634) the cleanup process as to the one or more snapshots. In some embodiments, in response to the request to perform the cleanup process, management module 140 or a component thereof (e.g., cleanup module 350,
In some embodiments, as part of the cleanup process, the memory controller identifies (636) one or more sets of redundant data objects in the tiered data structure that each include two or more data objects that are associated with same key information. For example, in state 542 of
In some embodiments, as part of the cleanup process, for a respective set of the one or more sets of redundant data objects (638), the memory controller: identifies a respective data object associated with a highest sequence number compared to one or more other data objects in the respective set of redundant data objects; and removes the one or more other data objects, distinct from the respective data object, in the respective set of redundant data objects from the tiered data structure. In some embodiments, the one or more other data objects that are removed are data objects (i) associated with sequence numbers less than the sequence number of the identified data object with the highest sequence number in the set of redundant data objects, and (ii) associated with sequence numbers less than or equal to the cleanup sequence number. In some embodiments, the memory controller also removes all data objects that include a tombstone in the TDS (or multiple tiered data structures) associated with the one or more specified snapshots.
In
In some embodiments, as part of the cleanup process, the memory controller deletes (640) information corresponding to the one or more snapshots from snapshot metadata, where the snapshot metadata corresponding to the one or more snapshots of the tiered data structure is stored in a respective leaf node of the tiered data structure. In
In some embodiments, the trigger identifies (642) the one or more snapshots on which to perform the cleanup process. With respect to the example described above in steps 638 and 640, management module 140 receives a request to perform a cleanup process as to the first and second snapshots. In some embodiments, when the trigger does not specify one or more snapshots, an oldest snapshot or all snapshots are specified in the request to perform the cleanup process.
In some embodiments, the memory controller detects (644) a second request to perform a deletion operation of a third data object in the tiered data structure, the second request includes second key information corresponding to the third data object. For example, with respect to
In some embodiments, the memory controller locates (646) the third data object using the key-map to map the second key information to a location of the third data object in the datastore. In some embodiments, management module 140 locates the third data object by mapping the second key information to location information in non-persistent key-map 202. For example, with reference to
In some embodiments, the memory controller identifies (648) a sequence number associated with the third data object. For example, with reference to
In some embodiments, in accordance with a determination that the sequence number associated with the third data object is greater than the first boundary sequence number corresponding to the first snapshot of the tiered data structure, the memory controller (650): replaces the third data object in the tiered data structure with a modified third data object including the second key information and a tombstone; and assigns the modified third object a second unique sequence number. For example, management module 140 determines that the third data object is not locked in one of the snapshots of the TDS because its unique sequence number is greater than boundary sequence number. Continuing with this example, management module 140 updates/replaces in-place the old value the third data object with a tombstone so as to create a third modified data object with a new unique sequence number.
In some embodiments, in accordance with a determination that the sequence number associated with the third data object is less than or equal to the first boundary sequence number corresponding to the first snapshot of the tiered data structure, the memory controller (652): inserts a fourth data object into the tiered data structure while maintaining the third data object in the tiered data structure, the fourth data object including the second key information and the tombstone; and assigns the fourth data object the second unique sequence number. Continuing with the example in steps 646 and 648, management module 140 determines that data object 512-11 is locked in the second snapshot because its unique sequence number (11) is equal to the boundary sequence number (11) corresponding to the second snapshot in snapshot entry 524. Continuing with this example, while maintaining data object 512-11, management module 140 inserts new data object 512-12 corresponding to (key 2-sequence number 12) with a tombstone into leaf node 506-4. In some embodiments, the tombstone indicates that the associated data object has been deleted. In state 542 of
It should be understood that the particular order in which the operations in
Attention is now directed to
In some embodiments, method 700 is performed in a data storage system (e.g., data storage system 100,
The memory controller detects (702) a request to perform an update operation of a first data object in a tiered data structure of the one or more tiered data structures stored in the datastore, the request includes first key information (e.g., a unique key or information from which a unique key can be identified such as a shortened key and a location/length of a key prefix) corresponding to the first data object and a new value for the first data object. In some embodiments, the corresponding value is data. In some embodiments, the corresponding value is a pointer identifying a location where the data is stored. In some embodiments, the data objects are contiguous data objects where the unique key information for a respective contiguous data object is adjacent or substantially adjacent to the corresponding value for the respective contiguous data object or other data for the respective contiguous data object that is adjacent to the corresponding value. In some embodiments, the data objects are split data objects where the unique key information for a respective split data object is separated from the corresponding value for the respective split data object by other data for other data objects and the unique key information for the respective split data object is stored with a pointer that identifies a location of the corresponding value for the respective split data object. For example, prior to state 534 in
The memory controller detects (704) a request to perform a cleanup process as to one or more snapshots of the tiered data structure. In some embodiments, the cleanup process is triggered according to a predefined schedule, by an event, or on-demand by a requestor (e.g., computer system 110,
In some embodiments, in response to the request to perform the cleanup process, management module 140 or a component thereof (e.g., cleanup module 350,
The memory controller locates (706), in the datastore, the first data object using a key-map to map the first key information to a first slab in the datastore storing the first data object. In some embodiments, management module 140 locates the first data object by mapping the first key information to location information in non-persistent key-map 202. In some embodiments, the located first data object is a data object corresponding to the first key information with the highest sequence number. In some embodiments, the location information is the location of the data object in datastore 136, a pointer to the location of the data object in datastore 136, or the location of a slab in datastore 136 storing a leaf node of a respective TDS of the one or more tiered data structures stored in datastore 136 that includes the first data object. For example, with reference to
The memory controller retrieves (708) a first leaf node of the tiered data structure from the first slab, the first leaf node includes the first data object. For example, with reference to
The memory controller stores (710) the first leaf node or a copy thereof in the cache. Continuing with the example in steps 706 and 708, management module 140 stores leaf node 506-1 or a copy thereof in cache 206.
The memory controller identifies (712) a sequence number associated with the first data object. In
In accordance with a first determination (714) that the sequence number associated with the first data object is greater than a boundary sequence number, the memory controller: replaces (716) the first data object in the cached first leaf node or copy thereof with a modified first data object including the first key information and the new value so as to generate modified first leaf node; and assigns (718) the modified first data object a unique sequence number. In some embodiments, the boundary sequence number is the highest sequence number associated with the snapshot entries in snapshot metadata 138. In some embodiments, the boundary sequence number corresponds to the cleanup sequence number. However, in other embodiments, the boundary sequence number corresponds to a later snapshot that is not included in the one or more specified snapshots. In some embodiments, when a snapshot is performed on a respective TDS, the sequence number of the snapshot is the highest sequence number assigned to a data object in the respective TDS at the time the snapshot was performed. In some embodiments, when the snapshot is performed on two or more tiered data structures stored in datastore 136, the sequence number of the snapshot is the highest sequence number assigned to a data object in the two or more tiered data structures at the time the snapshot was performed. In
In some embodiments, when the first data object is not locked in one of the snapshots, the first data object is replaced or updated in-place. In some embodiments, the first data object is replaced by s modified first data object that includes the new value. However, in some other embodiments, the first data object is not replaced by the modified first data object and, instead, the first data object is updated to include the new value. In
In accordance with a second determination (720) that the sequence number associated with the first data object is less than or equal to the boundary sequence number, the memory controller: while maintaining the first data object in the cached first leaf node or copy thereof, inserts (722) a second data object into the cached first leaf node or copy thereof including the first key information and the new value so as to generate modified first leaf node; and assigning (724) the modified first data object a unique sequence number. In this embodiment, when the first data object is locked in one of the snapshots, a second data object that includes the new value is inserted into the TDS. In
The memory controller performs (726) the cleanup process on the modified first leaf node by identifying (728) one or more sets of redundant data objects in the modified first leaf node, where a respective set of redundant data objects includes two or more data objects with same key information. After generating the modified leaf node by performing the update operation on the cached leaf node, management module 140 or a component thereof (e.g., cleanup module 350,
For a respective set of redundant objects, the memory controller (730): identifies a respective data object associated with a highest sequence number compared to the one or more other data objects in the respective set of redundant data objects; and removes the one or more other data objects, distinct from the respective data object, in the respective set of redundant data objects from the modified first leaf node. In some embodiments, the one or more other data objects that are removed are data objects (i) associated with sequence numbers less than the sequence number of the identified data object with the highest sequence number in the set of redundant data objects, and (ii) associated with sequence numbers less than or equal to the cleanup sequence number. In some embodiments, the memory controller also removes all data objects from the modified leaf node that include a tombstone. For example, with respect to modified leaf node 506-4 in state 536 of
The memory controller allocates (732) a second slab in the datastore for the modified first leaf node. In some embodiments, after performing the cleanup process on the modified leaf node, management module 140 or a component thereof (e.g., allocation module 344,
The memory controller assigns (734) the first key information, in the key-map, to the second slab. In some embodiments, management module 140 or a component thereof updates keys in non-persistent key-map 202 that previously mapped to the slab storing the unmodified leaf node (e.g., the retrieved leaf node) to map to the slab allocated for the modified leaf node in step 732.
The memory controller writes (736) the modified first leaf node to the second slab in the datastore. In some embodiments, management module 140 or a component thereof writes the modified leaf node to the slab allocated for the modified leaf node in step 732.
In some embodiments, while maintaining the unmodified first leaf node at the first slab, the memory controller writes (738) an operation commit record corresponding to the update operation to the log stream, the operation commit record includes the first key information, a pointer to the first slab, and a pointer to the second slab. In some embodiments, the update operation is one of two or more memory operations included in a transaction requested by the requestor. The transaction is associated with a unique transaction identifier, and the operation commit record corresponding to the update operation also includes the unique transaction identifier. In some embodiments, after writing the modified leaf node in step 736, the management module 140 or a component thereof writes an operation commit record to log stream 134 that includes the unique transaction identifier, the first key information, a pointer to the slab storing the unmodified leaf node (e.g., the retrieved leaf node), and a pointer to the slab allocated for the modified leaf node in step 732.
It should be understood that the particular order in which the operations in
Semiconductor memory devices include: volatile memory devices such as dynamic random access memory (“DRAM”) or static random access memory (“SRAM”) devices; non-volatile memory devices such as resistive random access memory (“ReRAM”), electrically erasable programmable read only memory (“EEPROM”), flash memory (which can also be considered a subset of EEPROM), ferroelectric random access memory (“FRAM”), and magnetoresistive random access memory (“MRAM”); and other semiconductor elements capable of storing information. Furthermore, each type of memory device may have different configurations. For example, flash memory devices may be configured in a NAND or a NOR configuration.
The memory devices can be formed from passive elements, active elements, or both. By way of non-limiting example, passive semiconductor memory elements include ReRAM device elements, which in some embodiments include a resistivity switching storage element, such as an anti-fuse, phase change material, etc., and optionally a steering element, such as a diode, etc. Further by way of non-limiting example, active semiconductor memory elements include EEPROM and flash memory device elements, which in some embodiments include elements containing a charge storage region, such as a floating gate, conductive nanoparticles or a charge storage dielectric material.
Multiple memory elements may be configured so that they are connected in series or such that each element is individually accessible. By way of non-limiting example, NAND devices contain memory elements (e.g., devices containing a charge storage region) connected in series. For example, a NAND memory array may be configured so that the array is composed of multiple strings of memory in which each string is composed of multiple memory elements sharing a single bit line and accessed as a group. In contrast, memory elements may be configured so that each element is individually accessible such as a NOR memory array. One of skill in the art will recognize that the NAND and NOR memory configurations are exemplary, and memory elements may be otherwise configured.
The semiconductor memory elements included in a single device, such as memory elements located within and/or over the same substrate (e.g., a silicon substrate) or in a single die, may be distributed in a two- or three- dimensional manner (such as a two dimensional (“2D”) memory array structure or a three dimensional (“3D”) memory array structure).
In a two dimensional memory structure, the semiconductor memory elements are arranged in a single plane or single memory device level. Typically, in a two dimensional memory structure, memory elements are located in a plane (e.g., in an x-z direction plane) which extends substantially parallel to a major surface of a substrate that supports the memory elements. The substrate may be a wafer on which the material layers of the memory elements are deposited and/or in which memory elements are formed or it may be a carrier substrate which is attached to the memory elements after they are formed. As a non-limiting example, the substrate may include a semiconductor such as silicon.
The memory elements may be arranged in the single memory device level in an ordered array, such as in a plurality of rows and/or columns. However, the memory elements may be arranged in non-regular or non-orthogonal configurations as understood by one of skill in the art. The memory elements may each have two or more electrodes or contact lines, including a bit line and a word line.
A three dimensional memory array is organized so that memory elements occupy multiple planes or multiple device levels, forming a structure in three dimensions (i.e., in the x, y, and z directions, where the y direction is substantially perpendicular and the x and z directions are substantially parallel to the major surface of the substrate).
As a non-limiting example, each plane in a three dimensional memory array structure may be physically located in two dimensions (one memory level) with multiple two dimensional memory levels to form a three dimensional memory array structure. As another non-limiting example, a three dimensional memory array may be physically structured as multiple vertical columns (e.g., columns extending substantially perpendicular to the major surface of the substrate in the y direction) having multiple elements in each column and therefore having elements spanning several vertically stacked planes of memory devices. The columns may be arranged in a two dimensional configuration, such as in an x-z plane, thereby resulting in a three dimensional arrangement of memory elements. One of skill in the art will understand that other configurations of memory elements in three dimensions will also constitute a three dimensional memory array.
By way of non-limiting example, in a three dimensional NAND memory array, the memory elements may be connected together to form a NAND string within a single plane, sometimes called a horizontal (e.g., x-z) plane for ease of discussion. Alternatively, the memory elements may be connected together to extend through multiple parallel planes. Other three dimensional configurations can be envisioned where some NAND strings contain memory elements in a single plane of memory elements (sometimes called a memory level) while other strings contain memory elements which extend through multiple parallel planes (sometimes called parallel memory levels). Three dimensional memory arrays may also be designed in a NOR configuration and in a ReRAM configuration.
A monolithic three dimensional memory array is one in which multiple planes of memory elements (also called multiple memory levels) are formed above and/or within a single substrate, such as a semiconductor wafer, according to a sequence of manufacturing operations. In a monolithic 3D memory array, the material layers forming a respective memory level, such as the topmost memory level, are located on top of the material layers forming an underlying memory level, but on the same single substrate. In some implementations, adjacent memory levels of a monolithic 3D memory array optionally share at least one material layer, while in other implementations adjacent memory levels have intervening material layers separating them.
In contrast, two dimensional memory arrays may be formed separately and then integrated together to form a non-monolithic 3D memory device in a hybrid manner. For example, stacked memories have been constructed by forming 2D memory levels on separate substrates and integrating the formed 2D memory levels atop each other. The substrate of each 2D memory level may be thinned or removed prior to integrating it into a 3D memory device. As the individual memory levels are formed on separate substrates, the resulting 3D memory arrays are not monolithic three dimensional memory arrays.
Associated circuitry is typically required for proper operation of the memory elements and for proper communication with the memory elements. This associated circuitry may be on the same substrate as the memory array and/or on a separate substrate. As non-limiting examples, the memory devices may have driver circuitry and control circuitry used in the programming and reading of the memory elements.
Further, more than one memory array selected from 2D memory arrays and 3D memory arrays (monolithic or hybrid) may be formed separately and then packaged together to form a stacked-chip memory device. A stacked-chip memory device includes multiple planes or layers of memory devices, sometimes called memory levels.
The term “three-dimensional memory device” (or 3D memory device) is herein defined to mean a memory device having multiple layers or multiple levels (e.g., sometimes called multiple memory levels) of memory elements, including any of the following: a memory device having a monolithic or non-monolithic 3D memory array, some non-limiting examples of which are described above; or two or more 2D and/or 3D memory devices, packaged together to form a stacked-chip memory device, some non-limiting examples of which are described above.
A person skilled in the art will recognize that the invention or inventions descried and claimed herein are not limited to the two dimensional and three dimensional exemplary structures described here, and instead cover all relevant memory structures suitable for implementing the invention or inventions as described herein and as understood by one skilled in the art.
It will be understood that, although the terms “first,” “second,” etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first data object could be termed a second data object, and, similarly, a second data object could be termed a first data object, which changing the meaning of the description, so long as all occurrences of the “first data object” are renamed consistently and all occurrences of the “second data object” are renamed consistently. The first data object and the second data object are both data objects, but they are not the same data object.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the claims. As used in the description of the embodiments and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that the term “and/or” as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
As used herein, the term “if” may be construed to mean “when” or “upon” or “in response to determining” or “in accordance with a determination” or “in response to detecting,” that a stated condition precedent is true, depending on the context. Similarly, the phrase “if it is determined [that a stated condition precedent is true]” or “if [a stated condition precedent is true]” or “when [a stated condition precedent is true]” may be construed to mean “upon determining” or “in response to determining” or “in accordance with a determination” or “upon detecting” or “in response to detecting” that the stated condition precedent is true, depending on the context.
The foregoing description, for purpose of explanation, has been described with reference to specific implementations. However, the illustrative discussions above are not intended to be exhaustive or to limit the claims to the precise forms disclosed. Many modifications and variations are possible in view of the above teachings. The implementations were chosen and described in order to best explain principles of operation and practical applications, to thereby enable others skilled in the art.
Number | Date | Country | Kind |
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1798/CHE/2014 | Apr 2014 | IN | national |
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Number | Date | Country | |
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20150286695 A1 | Oct 2015 | US |