Patent Application
20240367257
Optical systems, such as laser systems, may be utilized to perform manufacturing operations. Laser systems may be used to ablate material from the surface of an object in order to produce three-dimensional (3D) patterns in the object. Such systems find use in manufacturing a variety of patterns for a variety of applications. For example, such systems may be used to pattern surfaces with aerodynamic riblets. Such riblets may reduce aerodynamic drag on surfaces such as the wings, fuselage, or propeller of an aircraft, or the blades of a wind or gas turbine. But it may be difficult to apply these optical systems to the production of 3D patterns in surfaces that are much larger than a field-of-view (FOV) of the optical system. The FOV may be expanded using a variety of optical components such as lenses and telescopes, but this may make it difficult to produce micro-structured patterns. Accordingly, presented herein are systems and methods for large-scale optical manufacturing.
Various embodiments of the invention are disclosed in the following detailed description and the accompanying drawings.
The invention can be implemented in numerous ways, including as a process: an apparatus: a system: a composition of matter; a computer program product embodied on a computer readable storage medium; and/or a processor, such as a processor configured to execute instructions stored on and/or provided by a memory coupled to the processor. In this specification, these implementations, or any other form that the invention may take, may be referred to as techniques. In general, the order of the steps of disclosed processes may be altered within the scope of the invention. Unless stated otherwise, a component such as a processor or a memory described as being configured to perform a task may be implemented as a general component that is temporarily configured to perform the task at a given time or a specific component that is manufactured to perform the task. As used herein, the term “processor” refers to one or more devices, circuits, and/or processing cores configured to process data, such as computer program instructions.
A detailed description of one or more embodiments of the invention is provided below along with accompanying figures that illustrate the principles of the invention. The invention is described in connection with such embodiments, but the invention is not limited to any embodiment. The scope of the invention is limited only by the claims and the invention encompasses numerous alternatives, modifications and equivalents. Numerous specific details are set forth in the following description in order to provide a thorough understanding of the invention. These details are provided for the purpose of example and the invention may be practiced according to the claims without some or all of these specific details. For the purpose of clarity, technical material that is known in the technical fields related to the invention has not been described in detail so that the invention is not unnecessarily obscured.
As used herein, the term “or” shall convey both disjunctive and conjunctive meanings. For instance, the phrase “A or B” shall be interpreted to include element A alone, element B alone, and the combination of elements A and B.
Recent advances in optical manufacturing systems allow the use of short, high-power optical pulses to ablate material from the surface of an object in order to produce three-dimensional (3D) patterns in the object. Such systems find use in manufacturing a variety of patterns for a variety of applications. For example, such systems may be used to pattern surfaces with aerodynamic riblets. Such riblets may reduce aerodynamic drag on surfaces such as the wings, fuselage, or propeller of an aircraft, or the blades of a wind or gas turbine. However, it may be difficult to apply these systems to the production of 3D patterns in surfaces that are much larger than a field-of-view (FOV) of the optical system. The FOV may be expanded using a variety of optical components such as lenses and telescopes, but this may make it difficult to produce micro-structured patterns such as riblets.
Accordingly, the problem of large-scale optical manufacturing of microstructures is addressed by the systems and methods for large-scale optical manufacturing disclosed herein. The systems and methods utilize one or more optical processing systems to generate a first set of alignment marks and, in some embodiments, desired 3D structures (such as riblets), in a first region on a surface. During processing of the first region, the position and orientation of the optical processing systems relative to the target surface is measured and controlled based on the first set of alignment marks. The optical processing systems then move their focus to a second region on the surface. The second region generally partially overlaps the first region such that the optical processing systems can detect the location of the first set of alignment marks. The optical processing systems then generate a second set of alignment marks and, in some embodiments, the desired 3D structures, in a second region of the surface based on the location of the first set of alignment marks. After generation of the second set of alignment marks, control of the position and orientation of the optical processing systems is based on the second set of alignment marks, and the desired 3D structures can be generated to overwrite the first set of alignment marks. This process is repeated in an iterative manner until 3D structures have been generated on all regions of the surface. In alternative embodiments, all of the sets of alignment marks may be formed on the target surface and subsequently the alignment marks may then be used to optically align one or more optical processing systems configured to produce the desired 3D structures on the surface.
A method for processing a surface is disclosed herein. The method generally comprises: (a) optically generating at least one first alignment mark on a first region of a surface using a first optical processing system; and (b) optically generating at least one second alignment mark on a second region of the surface based on a position of the at least one first alignment mark using the second optical processing system. In some embodiments, the at least one first alignment mark comprises a first set of alignment marks and the at least on second alignment mark comprise a second set of alignment marks. In some embodiments, the second region is different from the first region. In some embodiments, the first optical processing system or the second optical processing system comprise a laser processing system. In some embodiments, the first optical processing system and the second optical processing system are different. In some embodiments, the first optical processing system and the second optical processing system are the same. In some embodiments, the surface is selected from the group consisting of: a wing of an aircraft, a fuselage of an aircraft, a propeller of an aircraft, a tail of an aircraft, a blade of a wind turbine, and a blade of a gas turbine. In some embodiments, a first size of the first region corresponds to a first field of view (FOV) of the first optical processing system. In some embodiments, a first size of the first region is smaller than a first FOV of the first optical processing system. In some embodiments, a second size of the second region corresponds to a second FOV of the second optical processing system. In some embodiments, a second size of the second region is smaller than a second FOV of the first optical processing system. In some embodiments, the first and second regions partially overlap. In some embodiments, (a) or (b) comprises marking the at least one first alignment mark on the first region or the at least one second alignment mark on the second region. In some embodiments, the first region or the second regions comprises a base coat and a top coat, and (a) or (b) comprises burning the at least one first alignment mark or the at least one second alignment mark in the base coat. In some embodiments, (a) or (b) comprises ablating the at least one first alignment mark on the first region or the at least one second alignment mark on the second region. In some embodiments. (a) or (b) comprises ablating the at least one first alignment mark on the first region or the at least one second alignment mark on the second region to an ablation depth that is less than a depth of structures to be generated on the first region or the second region. In some embodiments, the first region or the second region comprises a base coat and a top coat, and (a) or (b) comprises ablating the at least one first alignment mark or the at least one second alignment mark on the base coat. In some embodiments, the at least one first alignment mark comprises one or more guide stars projected on the surface. In some embodiments, the at least one first alignment mark or the at least one second alignment mark is selected from the group consisting of: diamond-shaped alignment marks, cross-shaped alignment marks, manji-shaped alignment marks, and Z-shaped alignment marks. In some embodiments, the method further comprises using a third optical processing system to ablate one or more structures on the first region or the second region. In some embodiments, the one or more structures comprise one or more riblets. In some embodiments, the third optical processing system is the same as the first optical processing system or the second optical processing system. In some embodiments, the third optical processing system is different from the first optical processing system or the second processing optical system.
Further disclosed herein is a method for processing a surface comprising: (a) optically generating at least one first alignment mark on a first region of the surface using a first optical processing system; and (b) processing the surface based on a position of the at least one first alignment mark using a second optical processing system. In some embodiments, the method further comprises optically generating the at least one first alignment mark using a first optical processing system. In some embodiments, the processing of the coat layer is performed using a second optical processing system.
Further disclosed herein is a method for processing a coat layer comprising: (a) detecting at least one first alignment mark formed below a coat layer through the coat layer; and (b) processing the coat layer based on a position of the at least one first alignment mark below the coat layer.
Further disclosed herein is a system for large-scale optical manufacturing. The system generally comprises: a first optical processing system configured to: (i) optically generate at least one first alignment mark on a first region of a surface; and a second optical processing system configured to: (ii) optically generate at least one second alignment mark on a second region of the surface based on a position of the at least one first alignment mark. In some embodiments, the at least one first alignment mark comprises a first set of alignments marks and the at least one second alignment mark comprises a second set of alignment marks. In some embodiments, the second region is different from the first region. In some embodiments, the first optical processing system or the second optical processing system comprise a laser processing system. In some embodiments, the first optical processing system and the second optical processing system are different. In some embodiments, the first optical processing system and the second optical processing system are the same. In some embodiments, the surface is selected from the group consisting of: a wing of an aircraft, a fuselage of an aircraft, a propeller of an aircraft, a tail of an aircraft, a blade of a wind turbine, and a blade of a gas turbine. In some embodiments, a first size of the first region corresponds to a first field of view (FOV) of the first optical processing system. In some embodiments, a first size of the first region is smaller than a first FOV of the first optical processing system. In some embodiments, a second size of the second region corresponds to a second FOV of the second optical processing system. In some embodiments, a second size of the second region is smaller than a second FOV of the second optical processing system. In some embodiments, the first and second regions partially overlap. In some embodiments, (i) or (ii) comprises marking the at least one first alignment mark on the first region or the at least one second alignment mark on the second region. In some embodiments, the first region or the second region comprises a base coat and a top coat, and (i) or (ii) comprises burning the at least one first alignment mark or the at least one second alignment mark in the base coat. In some embodiments, (i) or (ii) comprises ablating the at least one first alignment mark on the first region or the at least one second alignment mark on the second region. In some embodiments. (i) or (ii) comprises ablating the at least one first alignment mark on the first region or the at least one second alignment mark on the second region to an ablation depth that is less than a depth of structures to be generated on the first region or the second region. In some embodiments, the first region or the second region comprises a base coat and a top coat, and (i) or (ii) comprises ablating the at least one first alignment mark or the at least one second alignment mark on the base coat. In some embodiments, the at least one first alignment mark comprises one or more guide stars projected on the surface. In some embodiments, the at least one first alignment mark or the at least one second alignment mark is selected from the group consisting of: diamond-shaped alignment marks, cross-shaped alignment marks, manji-shaped alignment marks, and Z-shaped alignment marks. In some embodiments, the system further comprises a third optical processing system configured to ablate one or more structures on the first region or the second region. In some embodiments, the one or more structures comprise one or more riblets. In some embodiments, the third optical processing system is the same as the first optical processing system or the second optical processing system. In some embodiments, the third optical processing system is different from the first optical processing system or the second optical processing system.
In some embodiments, a first size of the first region corresponds to a first field of view (FOV) of the first optical processing system. In some embodiments, the first size of the first region is at least about 1 square millimeter (mm2), 2 mm2, 3 mm2, 4 mm2. 5 mm2. 6 mm2, 7 mm2, 8 mm2, 9 mm2, 10 mm2, 20 mm2, 30 mm2, 40 mm2, 50 mm2. 60 mm2, 70 mm2, 80 mm2, 90 mm2, 1 square centimeter (cm2), 2 cm2, 3 cm2, 4 cm2, 5 cm2, 6 cm2, 7 cm2, 8 cm2, 9 cm2, 10 cm2, 20 cm2, 30 cm2, 40 cm2, 50 cm2, 60 cm2, 70 cm2, 80 cm2. 90 cm2, 1 square decimeter (dm2), 2 dm2, 3 dm2, 4 dm2, 5 dm2, 6 dm2, 7 dm2, 8 dm2, 9 dm2, 10 dm2, 20 dm2, 30 dm2, 40 dm2, 50 dm2, 60 dm2, 70 dm2, 80 dm2, 90 dm2. 1 square meter (m2), 2 m2, 3 m2, 4 m2. 5 m2, 6 m2, 7 m2, 8 m2, 9 m2, 10 m2, 20 m2, 30 m2, 40 m2, 50 m2. 60 m2, 70 m2, 80 m2. 90 m2, 100 m2, or more. In some embodiments, the first size of the first region is at most about 100 m2, 90 m2. 80 m2, 70 m2, 60 m2, 50 m2, 40 m2, 30 m2, 20 m2, 10 m2, 9 m2, 8 m2, 7 m2, 6 m2, 5 m2, 4 m2, 3 m2, 2 m2, 1 m2, 90 dm2, 80 dm2, 70 dm2, 60 dm2, 50 dm2, 40 dm2, 30 dm2, 20 dm2. 10 dm2, 9 dm2. 8 dm2, 7 dm2, 6 dm2, 5 dm2, 4 dm2, 3 dm2, 2 dm2, 1 dm2, 90 cm2, 80 cm2, 70 cm2, 60 cm2, 50 cm2. 40 cm2, 30 cm2, 20 cm2, 10 cm2, 9 cm2, 8 cm2, 7 cm2. 6 cm2, 5 cm2, 4 cm2, 3 cm2, 2 cm2, 1 cm2, 90 mm2, 80 mm2, 70 mm2, 60 mm2, 50 mm2, 40 mm2, 30 mm2, 20 mm2, 10 mm2, 9 mm2, 8 mm2, 7 mm2, 6 mm2, 5 mm2, 4 mm2, 3 mm2, 2 mm2, 1 mm2, or less. In some embodiments, the first size of the first region is within a range defined by any two of the preceding values.
In some embodiments, the first optical processing system comprises a laser processing system. In some embodiments, the first optical processing system comprises a pulsed laser processing system. In some embodiments, the first optical processing system is configured to generate laser pulses.
In some embodiments, the laser pulses have a peak optical power of at least about 1 watt (W), 2 W, 3 W, 4 W, 5 W. 6 W, 7 W, 8 W, 9 W, 10 W, 20 W, 30 W, 40 W, 50 W, 60 W, 70 W, 80 W, 90 W. 100 W, 200 W, 300 W, 400 W, 500 W, 600 W, 700 W, 800 W, 900 W, 1 kilowatt (KW), 2 KW, 3 KW, 4 KW, 5 KW, 6 KW, 7 KW, 8 KW, 9 KW, 10 KW, 20 KW, 30 KW, 40 KW. 50 KW, 60 KW, 70 KW, 80 KW, 90 KW, 100 KW, 200 KW, 300 KW. 400 KW, 500 KW, 600 KW, 700 KW, 800 KW, 900 KW, 1 megawatt (MW), 2 MW, 3 MW, 4 MW, 5 MW, 6 MW, 7 MW, 8 MW, 9 MW, 10 MW, 20 MW, 30 MW, 40 MW, 50 MW, 60 MW, 70 MW, 80 MW, 90 MW, 100 MW, 200 MW, 300 MW, 400 MW, 500 MW, 600 MW, 700 MW, 800 MW, 900 MW, 1 gigawatt (GW), 2 GW, 3 GW, 4 GW, 5 GW, 6 GW. 7 GW, 8 GW. 9 GW, 10 GW, 20 GW, 30 GW. 40 GW, 50 GW, 60 GW, 70 GW, 80 GW, 90 GW, 100 GW. 200 GW, 300 GW, 400 GW, 500 GW, 600 GW, 700 GW, 800 GW, 900 GW, 1,000 GW, or more. In some embodiments, the laser pulses have a peak optical power of at most about 1,000 GW, 900 GW, 800 GW, 700 GW, 600 GW, 500 GW, 400 GW, 300 GW, 200 GW. 100 GW, 90 GW, 80 GW, 70 GW, 60 GW, 50 GW, 40 GW, 30 GW. 20 GW, 10 GW, 9 GW. 8 GW, 7 GW, 6 GW, 5 GW, 4 GW, 3 GW, 2 GW, 1 GW, 900 MW, 800 MW, 700 MW. 600 MW, 500 MW, 400 MW, 300 MW, 200 MW, 100 MW, 90 MW, 80 MW, 70 MW, 60 MW, 50 MW, 40 MW, 30 MW, 20 MW, 10 MW, 9 MW, 8 MW, 7 MW, 6 MW, 5 MW, 4 MW, 3 MW, 2 MW, 1 MW, 900 KW, 800 KW, 700 KW, 600 kW, 500 KW, 400 KW, 300 KW, 200 KW. 100 KW, 90 KW. 80 KW. 70 KW, 60 KW, 50 KW, 40 KW, 30 KW, 20 KW, 10 KW, 9 KW, 8 KW, 7 KW, 6 KW, 5 KW, 4 KW, 3 KW, 2 KW, 1 KW, 900 W, 800 W, 700 W. 600 W, 500 W, 400 W, 300 W, 200 W, 100 W, 90 W, 80 W, 70 W, 60 W, 50 W, 40 W, 30 W, 20 W, 10 W, 9 W, 8 W, 7 W, 6 W, 5 W, 4 W, 3 W, 2 W, 1 W, or less. In some embodiments, the laser pulses have a peak optical power that is within a range defined by any two of the preceding values.
In some embodiments, the laser pulses have a pulse length of at least about 1 picosecond (ps), 2 ps, 3 ps, 4 ps, 5 ps, 6 ps, 7 ps, 8 ps, 9 ps, 10 ps, 20 ps, 30 ps, 40 ps, 50 ps, 60 ps, 70 ps, 80 ps, 90 ps, 100 ps, 200 ps, 300 ps, 400 ps, 500 ps, 600 ps, 700 ps, 800 ps, 900 ps, 1 nanosecond (ns), 2 ns, 3 ns, 4 ns, 5 ns, 6 ns. 7 ns, 8 ns, 9 ns, 10 ns, 20 ns. 30 ns, 40 ns, 50 ns, 60 ns, 70 ns, 80 ns, 90 ns, 100 ns, 200 ns, 300 ns, 400 ns, 500 ns, 600 ns, 700 ns, 800 ns, 900 ns, 1 microsecond (μs), 2 μs, 3 μs, 4 μs, 5 μs, 6 μs, 7 μs, 8 μs, 9 μs, 10 μs, 20 μs, 30 μs, 40 μs, 50 μs. 60 μs, 70 μs, 80 μs, 90 μs, 100 μs, 200 μs, 300 μs, 400 μs, 500 μs, 600 μs, 700 μs, 800 μs, 900 μs, 1,000 μs, or more. In some embodiments, the laser pulses have a pulse length of at most about 1,000 μs, 900 μs, 800 μs, 700 μs, 600 μs. 500 μs, 400 μs, 300 μs, 200 μs, 100 μs, 90 μs, 80 μs, 70 μs, 60 μs, 50 μs, 40 μs, 30 μs, 20 μs, 10 μs, 9 μs, 8 μs. 7 μs, 6 μs, 5 μs, 4 μs, 3 μs, 2 μs, 1 μs, 900 ns, 800 ns, 700 ns, 600 ns, 500 ns, 400 ns, 300 ns, 200 ns, 100 ns, 90 ns, 80 ns, 70 ns, 60 ns, 50 ns, 40 ns, 30 ns, 20 ns, 10 ns, 9 ns, 8 ns, 7 ns, 6 ns, 5 ns, 4 ns, 3 ns, 2 ns, 1 ns, 900 ps, 800 ps, 700 ps. 600 ps, 500 ps, 400 ps, 300 ps, 200 ps, 100 ps, 90 ps, 80 ps, 70 ps, 60 ps, 50 ps, 40 ps, 30 ps, 20 ps, 10 ps, 9 ps, 8 ps, 7 ps, 6 ps, 5 ps, 4 ps. 3 ps, 2 ps, 1 ps, or less. In some embodiments, the laser pulses have a pulse length that is within a range defined by any two of the preceding values.
In some embodiments, the laser pulses have a pulse energy of at least about 1 picojoule (pJ), 2 pJ, 3 pJ, 4 pJ, 5 pJ, 6 pJ, 7 pJ, 8 pJ, 9 pJ, 10 pJ, 20 pJ, 30 pJ, 40 pJ, 50 pJ, 60 pJ. 70 pJ. 80 pJ, 90 pJ, 100 pJ, 200 pJ, 300 pJ, 400 pJ, 500 pJ, 600 pJ, 700 pJ, 800 pJ, 900 pJ, 1 nanojoule (nJ), 2 nJ, 3 nJ, 4 nJ, 5 nJ, 6 nJ, 7 nJ, 8 nJ, 9 nJ, 10 nJ, 20 nJ, 30 nJ, 40 nJ, 50 nJ, 60 nJ, 70 nJ, 80 nJ, 90 nJ, 100 nJ, 200 nJ, 300 nJ, 400 nJ, 500 nJ, 600 nJ, 700 nJ, 800 nJ, 900 nJ, 1 microjoule (μJ), 2 μJ, 3 μJ, 4 μJ, 5 μJ, 6 μJ, 7 μJ, 8 μJ, 9 μJ, 10 μJ, 20 μJ, 30 μJ, 40 μJ, 50 μJ, 60 μJ, 70 μJ, 80 μJ, 90 μJ, 100 μJ, 200 μJ, 300 μJ, 400 μJ, 500 μJ, 600 μJ, 700 μJ, 800 μJ, 900 μJ, 1,000 μJ, or more. In some embodiments, the laser pulses have a pulse energy of at most about 1,000 μJ, 900 μJ, 800 μJ, 700 pJ, 600 μJ, 500 μJ, 400 μJ, 300 μJ, 200 J, 100 J, 90 μJ, 80 μJ. 70 μJ, 60 μJ, 50 μJ, 40 μJ, 30 μJ, 20 μJ, 10 μJ, 9 μJ. 8 μJ, 7 μJ, 6 pJ, 5 μJ, 4 J, 3 μJ, 2 μJ, 1 μJ, 900 nJ, 800 nJ, 700 nJ, 600 nJ, 500 nJ, 400 nJ, 300 nJ, 200 nJ, 100 nJ. 90 nJ, 80 nJ, 70 nJ, 60 nJ, 50 nJ, 40 nJ, 30 nJ, 20 nJ, 10 nJ, 9 nJ, 8 nJ, 7 nJ, 6 nJ, 5 nJ, 4 nJ. 3 nJ, 2 nJ. 1 nJ, 900 pJ, 800 pJ, 700 pJ. 600 pJ, 500 pJ, 400 pJ, 300 pJ, 200 pJ, 100 pJ, 90 pJ, 80 pJ, 70 pJ, 60 pJ, 50 pJ, 40 pJ, 30 pJ, 20 pJ, 10 pJ, 9 pJ, 8 pJ, 7 pJ, 6 pJ, 5 pJ. 4 pJ, 3 pJ, 2 pJ, 1 pJ, or less. In some embodiments, the laser pulses have a pulse energy that is within a range defined by any two of the preceding values.
In some embodiments, the laser pulses have a repetition rate of at least about 1 hertz (Hz), 2 Hz, 3 Hz, 4 Hz, 5 Hz, 6 Hz, 7 Hz, 8 Hz, 9 Hz, 10 Hz, 20 Hz, 30 Hz, 40 Hz, 50 Hz, 60 Hz, 70 Hz, 80 Hz, 90 Hz, 100 Hz, 200 Hz, 300 Hz, 400 Hz, 500 Hz, 600 Hz, 700 Hz, 800 Hz, 900 Hz, 1 kilohertz (kHz), 2 kHz, 3 kHz, 4 kHz, 5 KHz, 6 kHz, 7 kHz, 8 kHz. 9 kHz, 10 KHz, 20 kHz, 30 kHz, 40 KHz, 50 kHz, 60 kHz, 70 kHz, 80 kHz, 90 kHz, 100 KHz. 200 KHz. 300 kHz, 400 kHz, 500 kHz, 600 kHz, 700 kHz, 800 kHz, 900 kHz, 1,000 kHz, or more. In some embodiments, the laser pulses have a repetition rate of at most about 1.000 KHz. 900 kHz, 800 kHz, 700 kHz, 600 kHz, 500 kHz, 400 kHz, 300 kHz, 200 kHz, 100 KHz, 90 KHz, 80 KHz, 70 kHz, 60 kHz, 50 kHz, 40 kHz, 30 kHz, 20 KHz, 10 KHz, 9 kHz, 8 kHz, 7 KHz. 6 kHz, 5 kHz, 4 kHz, 3 kHz, 2 kHz, 1 kHz, 900 Hz, 800 Hz, 700 Hz, 600 Hz, 500 Hz, 400 Hz, 300 Hz, 200 Hz, 100 Hz, 90 Hz, 80 Hz, 70 Hz, 60 Hz, 50 Hz, 40 Hz, 30 Hz, 20 Hz. 10 Hz. 9 Hz, 8 Hz, 7 Hz, 6 Hz, 5 Hz, 4 Hz, 3 Hz, 2 Hz. 1 Hz, or less. In some embodiments, the laser pulses have a repetition rate that is within a range defined by any two of the preceding values.
In some embodiments, the laser pulses have at least one wavelength of at least about 100 nanometers (nm), 125 nm, 150 nm, 175 nm, 200 nm, 225 nm. 250 nm, 275 nm. 300 nm, 325 nm, 350 nm, 375 nm, 400 nm. 425 nm, 450 nm, 475 nm, 500 nm, 525 nm, 550 nm, 575 nm, 600 nm, 625 nm, 650 nm, 675 nm, 700 nm, 725 nm, 750 nm, 775 nm, 800 nm, 825 nm, 850 nm, 875 nm, 900 nm, 925 nm. 950 nm, 975 nm, 1 micrometer (μm), 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, 1.7 μm. 1.8 μm, 1.9 μm, 2 μm, 2.1 μm, 2.2 μm, 2.3 μm, 2.4 μm, 2.5 μm, 2.6 μm, 2.7 μm, 2.8 μm, 2.9 μm, 3 μm, 3.1 μm, 3.2 μm, 3.3 μm, 3.4 μm, 3.5 μm, 3.6 μm, 3.7 μm, 3.8 μm, 3.9 μm, 4 μm. 4.1 μm, 4.2 μm, 4.3 μm, 4.4 μm, 4.5 μm, 4.6 μm, 4.7 μm, 4.8 μm, 4.9 μm, 5μ, 5.1μ, 5.2μ, 5.3 μm, 5.4μ, 5.5 μm, 5.6 μm, 5.7 μm, 5.8 μm, 5.9 μm, 6 μm, 6.1 μm, 6.2 μm, 6.3 μm. 6.4 μm, 6.5 μm, 6.6 μm, 6.7 μm, 6.8 μm, 6.9 μm, 7 μm, 7.1 μm, 7.2 μm, 7.3 μm, 7.4 μm, 7.5 μm, 7.6 μm, 7.7 μm, 7.8 μm, 7.9 μm, 8 μm, 8.1μ, 8.2μ, 8.3 μm, 8.4 μm, 8.5 μm, 8.6μ. 8.7 μm, 8.8 μm, 8.9 μm, 9μ, 9.1μ, 9.2 μm, 9.3 μm, 9.4 μm, 9.5 μm, 9.6 μm, 9.7 μm, 9.8 μm, 9.9 μm, 10 μm, 10.1 μm, 10.2 μm. 10.3 μm, 10.4 μm, 10.5 μm, 10.6 μm. 10.7 μm, 10.8 μm, 10.9 μm, 11 μm, or more. In some embodiments, the laser pulses have at least one wavelength of at most about 11 μm, 10.9 μm, 10.8 μm, 10.7 μm, 10.6 μm. 10.5 μm. 10.4 μm, 10.3 μm, 10.2 μm, 10.1 μm, 10 μm, 9.9 μm, 9.8 μm, 9.7 μm, 9.6 μm, 9.5 μm, 9.4 μm, 9.3 μm. 9.2 μm, 9.1 μm, 9 μm, 8.9 μm, 8.8 μm, 8.7 μm, 8.6 μm, 8.5 μm, 8.4 μm, 8.3 μm, 8.2 μm. 8, 1 μm, 8 μm, 7.9 μm, 7.8 μm, 7.7 μm, 7.6 μm, 7.5 μm, 7.4 μm, 7.3 μm, 7.2 μm, 7.1 μm, 7 μm, 6.9 μm, 6.8 μm, 6.7 μm, 6.6 μm, 6.5 μm, 6.4 μm, 6.3 μm, 6.2 μm, 6.1μ, 6μ, 5.9 μm. 5.8μ, 5.7 μm, 5.6μ, 5.5μ, 5.4μ, 5.3 μm, 5.2 μm, 5.1μ, 5 μm, 4.9 μm, 4.8 μm, 4.7 μm, 4.6 μm, 4.5 μm, 4.4 μm, 4.3 μm, 4.2 μm, 4.1 μm, 4μ, 3.9μ, 3.8 μm, 3.7 μm, 3.6 μm. 3.5μ, 3.4μ, 3.3μ, 3.2μ, 3.1μ, 3 μm, 2.9 μm. 2.8 μm, 2.7 μm, 2.6 μm, 2.5 μm, 2.4 μm, 2.3 μm, 2.2 μm, 2.1 μm, 2 μm, 1.9 μm, 1.8 μm. 1.7 μm, 1.6 μm, 1.5 μm, 1.4 μm, 1.3 μm. 1.2 μm, 1.1 μm, 1 μm, 975 nm, 950 nm. 925 nm, 900 nm, 875 nm, 850 nm, 825 nm, 800 nm, 775 nm, 750 nm, 725 nm. 700 nm, 675 nm, 650 nm, 625 nm, 600 nm, 575 nm, 550 nm. 525 nm, 500 nm, 475 nm, 450 nm, 425 nm, 400 nm, 375 nm, 350 nm, 325 nm, 300 nm, 275 nm, 250 nm, 225 nm, 200 nm. 175 nm, 150 nm, 125 nm. 100 nm, or less. In some embodiments, the laser pulses have at least one wavelength that is within a range defined by any two of the preceding values.
In the example shown, the first optical processing system is used to optically generate a first set of alignment marks on the first region at 120. In some embodiments, the first set of alignment marks have a diamond shape, as described herein with respect to
In some embodiments, the first set of alignment marks is marked on the first region. In some embodiments, the first set of alignment marks is ablated from the first region. In some embodiments, the first set of alignment marks is patterned on the first region. In some embodiments, the first region comprises a base coat and a top coat. In some embodiments, the first set of alignment marks is marked in the base coat. In some embodiments, the first set of alignment marks is ablated on the base coat. In some embodiments, the first set of alignment marks is ablated to an ablation depth that is less than a depth of structures to be generated on the first region. For example, in some embodiments, the first set of alignment marks is ablated to an ablation depth of at least about 1 μm, 2 μm, 3 μm, 4μ, 5 μm, 6 μm, 7 μm, 8 μm, 9μ, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, or more. In some embodiments, the first set of alignment marks is ablated to an ablation depth of at most about 50 μm. 40 μm, 30 μm, 20 μm, 10 μm, 9 μm, 8 μm, 7 μm, 6 μm, 5 μm, 4 μm, 3 μm, 2 μm, 1 μm, or less. In some embodiments, the first set of alignment marks is ablated to an ablation depth that is within a range defined by any two of the preceding values. In some embodiments, the structures to be generated on the first region have a depth of at least about 10 μm, 20 μm, 30 μm, 40 μm, 50 μm. 60 μm. 70 μm. 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm. 170 μm, 180 μm, 190 μm, 200 μm, or more. In some embodiments, the structures to be generated on the first region have a depth of at most about 200 μm, 190 μm, 180 μm, 170 μm, 160 μm, 150 μm, 140 μm, 130 μm, 120 μm, 110 μm, 100 μm, 90μ, 80μ, 70 μm, 60 μm, 50 μm, 40 μm, 30 μm, 20 μm, 10 μm, or less. In some embodiments, the structures to be generated on the first region have a depth that is within a range defined by any two of the preceding values. For example, in some embodiments, the structures to be generated on the first region have a depth between about 1 μm and about 100 μm, between about 1 μm and about 50 μm, between about 10 μm and about 100 μm, or between about 10 μm and about 50 μm.
In the example shown, a second optical processing system is focused on a second region of the surface at 130. In some embodiments, the second region contains the first set of alignment marks. In some embodiments, a second size of the second region corresponds to a second FOV of the second optical processing system. In some embodiments, the second size of the second region is any size described herein with respect to the first size of the first region. In some embodiments, the second size of the second region is the same as the first size of the first region. In some embodiments, the second size of the second region is different than the first size of the first region. In some embodiments, the first and second regions are different. In some embodiments, the first and second regions overlap. In some embodiments, the first and second regions overlap by at least about 1 mm2, 2 mm2, 3 mm2, 4 mm2, 5 mm2, 6 mm2, 7 mm2, 8 mm2, 9 mm2, 10 mm2, 20 mm2. 30 mm2, 40 mm2, 50 mm2, 60 mm2, 70 mm2. 80 mm2, 90 mm2, 1 cm2, 2 cm2, 3 cm2, 4 cm2, 5 cm2, 6 cm2, 7 cm2, 8 cm2, 9 cm2, 10 cm2, 20 cm2, 30 cm2, 40 cm2, 50 cm2, 60 cm2, 70 cm2, 80 cm2. 90 cm2, 1 dm2. 2 dm2, 3 dm2, 4 dm2, 5 dm2, 6 dm2. 7 dm2, 8 dm2, 9) dm2, 10 dm2, 20 dm2, 30 dm2, 40 dm2, 50 dm2, 60 dm2, 70 dm2, 80 dm2, 90 dm2, 1 m2, 2 m2, 3 m2, 4 m2, 5 m2, 6 m2, 7 m2, 8 m2. 9 m2, 10 m2, 20 m2, 30 m2, 40 m2, 50 m2, 60 m2, 70 m2, 80 m2, 90 m2, 100 m2, or more. In some embodiments, the first and second regions overlap by at most about 100 m2, 90 m2, 80 m2, 70 m2, 60 m2. 50 m2, 40 m2, 30 m2, 20 m2, 10 m2, 9 m2, 8 m2, 7 m2, 6 m2, 5 m2, 4 m2, 3 m2, 2 m2, 1 m2, 90 dm2, 80 dm2. 70 dm2, 60 dm2, 50 dm2. 40 dm2, 30 dm2, 20 dm2. 10 dm2, 9 dm2, 8 dm2, 7 dm2, 6 dm2, 5 dm2, 4 dm2, 3 dm2, 2 dm2, 1 dm2, 90 cm2, 80 cm2, 70 cm2, 60 cm2, 50 cm2, 40 cm2, 30 cm2, 20 cm2, 10 cm2, 9 cm2, 8 cm2, 7 cm2, 6 cm2, 5 cm2, 4 cm2, 3 cm2, 2 cm2, 1 cm2, 90 mm2, 80 mm2, 70 mm2. 60 mm2, 50 mm2, 40 mm2, 30 mm2, 20 mm2, 10 mm2, 9 mm2, 8 mm2, 7 mm2, 6 mm2, 5 mm2, 4 mm2, 3 mm2, 2 mm2, 1 mm2, or less. In some embodiments, the first and second regions overlap by an amount that is within a range defined by any two of the preceding values.
In some embodiments, the first and second optical processing systems are different. That is, in some embodiments, the first and second optical processing systems are physically distinct from one another. In some embodiments, the first and second optical processing systems utilize one or more similar optical elements. In some embodiment, the first and second optical processing systems utilize one or more dissimilar optical elements. In some embodiments, the first and second optical processing systems are the same. That is, in some embodiments, the first and second optical processing systems constitute a single optical processing system that performs all of operations 110, 120, 130, and 140 described herein with respect to
In the example shown, the second optical processing system is used to optically generate a second set of alignment marks on the second region at 140. In some embodiments, the second set of alignment marks are generated based on a position of the first set of alignment marks. In some embodiments, the second set of alignment marks have a diamond shape, as described herein with respect to
In some embodiments, the second set of alignment marks is marked on the second region. In some embodiments, second set of alignment marks is ablated from the second region. In some embodiments, the second set of alignment marks is patterned on the second region. In some embodiments, the second region comprises a base coat and a top coat. In some embodiments, the second set of alignment marks is marked in the base coat. In some embodiments, the second set of alignment marks is ablated on the base coat. In some embodiments, the second set of alignment marks is ablated to an ablation depth that is less than a depth of structures to be generated on the first region. For example, in some embodiments, the second set of alignment marks is ablated to any ablation depth described herein with respect to the first set of alignment marks. In some embodiments, the structures to be generated on the first region have any depth described herein.
In some embodiments, after generation of the second set of alignment marks, control of the position and orientation of the optical processing systems is based on the second set of alignment marks, and the desired 3D structures can be generated to over-write the first set of alignment marks.
In some embodiments, the method 100 further comprises repeating operations 130 and 140 to generate a plurality of sets of alignment marks on a plurality of regions on the surface. For example, in some embodiments, the method further comprises performing operations 130 and 140 to generate a third set of alignment marks on a third region based on the first or second set of alignment marks. In some embodiments, the third region partially overlaps the first or second region and contains the first or second set of alignment marks. In some embodiments, the method further comprises performing operations 130 and 140 to generate a fourth set of alignment marks on a fourth region based on the first, second, or third set of alignment marks. In some embodiments, the fourth region partially overlaps the first, second, or third region and contains the first, second, or third set of alignment marks. In some embodiments, the operations 130 and 140 are repeated any number of times to generate a set of alignment marks on any number of additional regions based on any previously generated set of alignment marks. In some embodiments, each additional region partially overlaps any previously generated region and contains any previously generated set of alignment marks.
For example, in some embodiments, the operations 130 and 140 are repeated at least about 1 time, 2 times, 3 times, 4 times, 5 times, 6 times, 7 times, 8 times, 9 times, 10 times, 20 times, 30 times, 40 times, 50 times, 60 times, 70 times, 80 times, 90 times, 100 times, 200 times, 300 times, 400 times, 500 times, 600 times, 700 times, 800 times, 900 times, 1,000 times, 2,000 times. 3,000 times, 4.000 times, 5,000 times. 6,000 times, 7,000 times, 8,000 times, 9,000 times. 10,000 times, 20,000 times, 30,000 times. 40,000 times, 50,000 times, 60,000 times, 70,000 times, 80,000 times, 90,000 times, 100,000 times, 200,000 times, 300,000 times, 400,000 times, 500,000 times, 600,000 times, 700,000 times. 800,000 times, 900,000 times, 1,000,000 times, or more to generate at least about 1 set of alignment marks, 2 sets of alignment marks, 3 sets of alignment marks, 4 sets of alignment marks. 5 sets of alignment marks, 6 sets of alignment marks, 7 sets of alignment marks, 8 sets of alignment marks, 9 sets of alignment marks, 10 sets of alignment marks, 20 sets of alignment marks, 30 sets of alignment marks, 40 sets of alignment marks, 50 sets of alignment marks, 60 sets of alignment marks, 70 sets of alignment marks, 80 sets of alignment marks, 90 sets of alignment marks, 100 sets of alignment marks, 200 sets of alignment marks, 300) sets of alignment marks, 400 sets of alignment marks. 500 sets of alignment marks, 600 sets of alignment marks, 700 sets of alignment marks. 800 sets of alignment marks, 900 sets of alignment marks, 1.000 sets of alignment marks. 2.000 sets of alignment marks, 3,000 sets of alignment marks, 4.000 sets of alignment marks, 5,000 sets of alignment marks, 6,000 sets of alignment marks, 7.000 sets of alignment marks, 8,000 sets of alignment marks, 9,000 sets of alignment marks, 10,000 sets of alignment marks, 20,000 sets of alignment marks, 30,000 sets of alignment marks, 40,000 sets of alignment marks, 50,000 sets of alignment marks, 60,000 sets of alignment marks. 70,000 sets of alignment marks, 80,000 sets of alignment marks, 90.000 sets of alignment marks, 100,000 sets of alignment marks. 200,000 sets of alignment marks, 300,000 sets of alignment marks, 400,000 sets of alignment marks, 500,000 sets of alignment marks, 600,000 sets of alignment marks, 700,000 sets of alignment marks, 800,000 sets of alignment marks, 900,000 sets of alignment marks, 1,000,000 sets of alignment marks, or more in at least about 1 region, 2 regions, 3 regions, 4 regions, 5 regions, 6 regions, 7 regions. 8 regions, 9 regions, 10 regions, 20 regions, 30 regions, 40 regions, 50 regions, 60 regions, 70 regions. 80 regions. 90 regions, 100 regions, 200 regions. 300 regions, 400 regions, 500 regions, 600 regions, 700 regions, 800 regions, 900 regions. 1,000 regions, 2,000 regions, 3,000 regions. 4,000 regions, 5,000 regions, 6,000 regions, 7.000 regions, 8,000 regions, 9,000 regions, 10,000 regions, 20.000 regions, 30,000 regions, 40,000 regions. 50,000 regions, 60,000 regions, 70,000 regions. 80,000 regions, 90,000 regions, 100,000 regions, 200,000 regions, 300,000 regions, 400,000 regions, 500,000 regions, 600,000 regions, 700,000 regions, 800,000 regions, 900,000 regions, 1,000,000 regions, or more.
In some embodiments, operations 130 and 140 are repeated at most about 1,000,000 times, 900,000 times, 800,000 times, 700,000 times, 600,000 times, 500,000 times, 400,000 times, 300,000 times, 200,000 times, 100,000 times, 90,000 times, 80,000 times, 70,000 times, 60,000 times, 50,000 times, 40,000 times, 30,000 times, 20,000 times, 10,000 times, 9,000 times, 8,000 times. 7,000 times, 6,000 times, 5,000 times. 4,000 times, 3.000 times, 2,000 times, 1,000 times. 900 times, 800 times, 700 times, 600 times, 500 times, 400 times, 300 times, 200 times, 100 times, 90 times, 80 times, 70 times. 60 times. 50 times, 40 times, 30 times, 20 times, 10 times, 9 times, 8 times, 7 times, 6 times, 5 times, 4 times, 3 times, 2 times, or 1 time to generate at most about 1,000,000 sets of alignment marks, 900,000 sets of alignment marks, 800,000 sets of alignment marks, 700,000 sets of alignment marks, 600,000 sets of alignment marks, 500,000 sets of alignment marks, 400,000 sets of alignment marks, 300,000 sets of alignment marks, 200,000 sets of alignment marks, 100,000 sets of alignment marks, 90,000 sets of alignment marks. 80,000 sets of alignment marks, 70,000 sets of alignment marks, 60.000 sets of alignment marks, 50,000 sets of alignment marks. 40,000 sets of alignment marks, 30,000 sets of alignment marks, 20,000 sets of alignment marks, 10,000 sets of alignment marks, 9,000 sets of alignment marks, 8,000 sets of alignment marks, 7,000 sets of alignment marks, 6,000 sets of alignment marks, 5,000 sets of alignment marks, 4,000 sets of alignment marks, 3,000 sets of alignment marks, 2,000 sets of alignment marks, 1,000 sets of alignment marks, 900 sets of alignment marks, 800 sets of alignment marks, 700 sets of alignment marks, 600 sets of alignment marks, 500 sets of alignment marks, 400 sets of alignment marks, 300 sets of alignment marks, 200 sets of alignment marks, 100 sets of alignment marks, 90 sets of alignment marks, 80 sets of alignment marks, 70 sets of alignment marks, 60 sets of alignment marks, 50 sets of alignment marks, 40 sets of alignment marks, 30 sets of alignment marks, 20 sets of alignment marks, 10 sets of alignment marks, 9 sets of alignment marks. 8 sets of alignment marks. 7 sets of alignment marks, 6 sets of alignment marks, 5 sets of alignment marks, 4 sets of alignment marks, 3 sets of alignment marks, 2 sets of alignment marks, or 1 set of alignment marks in at most about 1,000,000 regions, 900,000 regions, 800,000 regions, 700,000 regions, 600,000 regions, 500,000 regions, 400,000 regions, 300,000 regions, 200,000 regions, 100,000 regions, 90,000 regions, 80,000 regions, 70,000 regions, 60,000 regions, 50,000 regions. 40,000 regions, 30,000 regions, 20,000 regions. 10,000 regions, 9,000 regions. 8,000 regions, 7,000 regions, 6,000 regions, 5,000 regions, 4,000 regions, 3,000 regions, 2,000 regions, 1,000 regions, 900 regions, 800 regions, 700 regions, 600 regions, 500 regions, 400 regions, 300 regions, 200 regions, 100 regions, 90 regions, 80 regions. 70 regions, 60 regions, 50 regions, 40 regions. 30 regions. 20 regions, 10 regions, 9 regions, 8 regions. 7 regions, 6 regions. 5 regions, 4 regions, 3 regions, 2 regions, or 1 region.
In some embodiments, operations 130 and 140 are repeated a number of times that is within a range defined by any two of the preceding values to generate a number of sets of alignment marks that is within a range defined by any two of the preceding values in a number of regions that is within a range defined by any two of the preceding values. For example, in some embodiments, operations 130 and 140 are repeated between 10,000 and 1,000,000 times, between 10,000 and 500,000 times, between 10,000 and 100,000 times, between 50,000 and 1,000,000 times, between 50,000 and 500,000 times, between 50,000 and 100,000 times, between 100,000 and 1,000,000 times, or between 100,000 and 500,000 times to generate between 10,000 and 1,000,000 sets of alignments marks, between 10,000 and 500.000 sets of alignments marks, between 10,000 and 100,000 sets of alignments marks, between 50,000 and 1,000,000 sets of alignments marks, between 50,000 and 500,000 sets of alignments marks, between 50,000 and 100,000 sets of alignments marks, between 100,000 and 1,000,000 sets of alignments marks, or between 100,000 and 500,000 sets of alignments marks in between 10,000 and 1.000,000 regions, between 10,000 and 500,000 regions, between 10,000 and 100,000 regions, between 50,000 and 1,000,000 regions, between 50,000 and 500.000 regions, between 50,000 and 100,000 regions, between 100,000 and 1,000,000 regions, or between 100,000 and 500.000 regions.
In some embodiments, a set of alignment marks comprises at least about 1 alignment mark. 2 alignment marks, 3 alignment marks, 4 alignment marks, 5 alignment marks, 6 alignment marks, 7 alignment marks, 8 alignment marks, 9 alignment marks, 10 alignment marks, or more. In some embodiments, a set of alignment marks comprises at most about 10 alignment marks, 9 alignment marks, 8 alignment marks, 7 alignment marks, 6 alignment marks, 5 alignment marks, 4 alignment marks, 3 alignment marks, 2 alignment marks, or 1 alignment mark. In some embodiments, a set of alignment marks comprises a number of alignment marks that is within a range defined by any two of the preceding values.
As an example, a Boeing 747 jet has wings whose upper surface area covers approximately 500 square meters. If the first or second optical processing systems have a FOV of 100 mm×100 mm, this amounts to approximately 50.000 regions just to cover the entire surface area of the wings. If the undersides of the wings, the tail surfaces, and the fuselage are also optically processed, this can amount to 250,000 regions or more.
In some embodiments, the method 100 further comprises using a third optical processing system to generate one or more structures on the first region, second region, or any other region described herein. In some embodiments, the one or more structures comprise one or more riblets. In some embodiments, the third optical processing system is the same as the first optical processing system or second optical processing system. In some embodiments, the third optical processing system is different from the first optical processing system or second optical processing system. In some embodiments, the third optical processing system comprises a laser processing system. In some embodiments, the third optical processing system comprises a pulsed laser processing system. In some embodiments, the third optical processing system is configured to generate laser pulses. In some embodiments, the laser pulses have any peak optical power described herein with respect to the first optical processing system. In some embodiments, the laser pulses have any pulse length described herein with respect to the first optical processing system. In some embodiments, the laser pulses have any pulse energy described herein with respect to the first optical processing system. In some embodiments, the laser pulses have any repetition rate described herein with respect to the first optical processing system. In some embodiments, the laser pulses have at least one wavelength described herein with respect to the first optical processing system.
In some embodiments, all sets of alignment marks are generated prior to generating any of the structures on the plurality of regions. In some embodiments, the generation of the sets of alignment marks is interleaved with the generation of the structures on the plurality of regions. For instance, in some embodiments, the first and second sets of alignment marks are generated, then the structures are generated in the first region, then the third set of alignment marks are generated, then the structures are generated in the second region, and so forth. In some embodiments, the sets of alignment marks and structures in the various regions are generated in any possible order.
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In some embodiments, the first, second, third, fourth, fifth, sixth, seventh, and eighth sets of alignment marks are generated prior to generating any of the structures on the first, second, third, fourth, fifth, sixth, seventh, or eighth processing regions. In some embodiments, the generation of the first, second, third, fourth, fifth, sixth, seventh, or eighth sets of alignment marks is interleaved with the generation of the structures on the first, second, third, fourth, fifth, sixth, seventh, or eighth processing regions. For instance, in some embodiments, the first and second sets of alignment marks are generated, then the structures are generated in the first processing region, then the third set of alignment marks are generated, then the structures are generated in the second processing region, and so forth. In some embodiments, the sets of alignment marks and structures in the various regions and processing regions are generated in any possible order.
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Although the alignment marks are shown as parallel lines oriented along perpendicular axes in
Although depicted as comprising first and second optical processing systems in
Additionally, systems are disclosed that can be used to perform the method 100 of
The microprocessor subsystem 501 is coupled bi-directionally with memory 504, which can include a first primary storage, typically a random access memory (RAM), and a second primary storage area, typically a read-only memory (ROM). As is well known in the art, primary storage can be used as a general storage area and as scratch-pad memory, and can also be used to store input data and processed data. It can also store programming instructions and data, in the form of data objects and text objects, in addition to other data and instructions for processes operating on microprocessor subsystem. Also as well known in the art, primary storage typically includes basic operating instructions, program code, data and objects used by the microprocessor subsystem to perform its functions. Primary storage devices 504 may include any suitable computer-readable storage media, described below, depending on whether, for example, data access needs to be bi-directional or uni-directional. The microprocessor subsystem 501 can also directly and very rapidly retrieve and store frequently needed data in a cache memory (not shown).
A removable mass storage device 505 provides additional data storage capacity for the computer system 500, and is coupled either bi-directionally (read/write) or uni-directionally (read only) to microprocessor subsystem 501. Storage 505 may also include computer-readable media such as magnetic tape, flash memory, signals embodied on a carrier wave, PC-CARDS, portable mass storage devices, holographic storage devices, and other storage devices. A fixed mass storage 509 can also provide additional data storage capacity. The most common example of mass storage 509 is a hard disk drive. Mass storage 505 and 509 generally store additional programming instructions, data, and the like that typically are not in active use by the processing subsystem. It will be appreciated that the information retained within mass storage 505 and 509 may be incorporated, if needed, in standard fashion as part of primary storage 504 (e.g., RAM) as virtual memory.
In addition to providing processing subsystem 501 access to storage subsystems, bus 506 can be used to provide access other subsystems and devices as well. In the described embodiment, these can include a display monitor 508, a network interface 507, a keyboard 502, and a pointing device 503, as well as an auxiliary input/output device interface, a sound card, speakers, and other subsystems as needed. The pointing device 503 may be a mouse, stylus, track ball, or tablet, and is useful for interacting with a graphical user interface.
The network interface 507 allows the processing subsystem 501 to be coupled to another computer, computer network, or telecommunications network using a network connection as shown. Through the network interface 507, it is contemplated that the processing subsystem 501 might receive information, e.g., data objects or program instructions, from another network, or might output information to another network in the course of performing the above-described method steps. Information, often represented as a sequence of instructions to be executed on a processing subsystem, may be received from and outputted to another network, for example, in the form of a computer data signal embodied in a carrier wave. An interface card or similar device and appropriate software implemented by processing subsystem 501 can be used to connect the computer system 500 to an external network and transfer data according to standard protocols. That is, method embodiments of the present invention may execute solely upon processing subsystem 501, or may be performed across a network such as the Internet, intranet networks, or local area networks, in conjunction with a remote processing subsystem that shares a portion of the processing. Additional mass storage devices (not shown) may also be connected to processing subsystem 501 through network interface 507.
An auxiliary I/O device interface (not shown) can be used in conjunction with computer system 500. The auxiliary I/O device interface can include general and customized interfaces that allow the processing subsystem 501 to send and, more typically, receive data from other devices such as microphones, touch-sensitive displays, transducer card readers, tape readers, voice or handwriting recognizers, biometrics readers, cameras, portable mass storage devices, and other computers.
In addition, embodiments of the present invention further relate to computer storage products with a computer readable medium that contains program code for performing various computer-implemented operations. The computer-readable medium is any data storage device that can store data which can thereafter be read by a computer system. The media and program code may be those specially designed and constructed for the purposes of the present invention, or they may be of the kind well known to those of ordinary skill in the computer software arts. Examples of computer-readable media include, but are not limited to, all the media mentioned above: magnetic media such as hard disks, floppy disks, and magnetic tape: optical media such as CD-ROM disks: magneto-optical media such as floptical disks; and specially configured hardware devices such as application-specific integrated circuits (ASICs), programmable logic devices (PLDs), and ROM and RAM devices. The computer-readable medium can also be distributed as a data signal embodied in a carrier wave over a network of coupled computer systems so that the computer-readable code is stored and executed in a distributed fashion. Examples of program code include both machine code, as produced, for example, by a compiler, or files containing higher level code that may be executed using an interpreter. The computer system shown in
Embodiment 1. A method for processing a surface comprising:
Embodiment 2. The method of Embodiment 1, wherein the at least one first alignment mark comprises a first set of alignment marks and wherein the at least one second alignment mark comprises a second set of alignment marks.
Embodiment 3. The method of Embodiment 1 or 2, wherein the second region is different from the first region.
Embodiment 4. The method of any one of Embodiments 1-3, wherein the first optical processing system or the second optical processing system comprise a laser processing system.
Embodiment 5. The method of any one of Embodiments 1-4, wherein the first optical processing system and the second optical processing system are different.
Embodiment 6. The method of any one of Embodiments 1-4, wherein the first optical processing system and the second optical processing system are the same.
Embodiment 7. The method of any one of Embodiments 1-6, wherein the surface is selected from the group consisting of: a wing of an aircraft, a fuselage of an aircraft, a propeller of an aircraft, a tail of an aircraft, a blade of a wind turbine, and a blade of a gas turbine.
Embodiment 8. The method of any one of Embodiments 1-7, wherein a first size of the first region corresponds to a first field of view (FOV) of the first optical processing system.
Embodiment 9. The method of any one of Embodiments 1-7, wherein a first size of the first region is smaller than a first FOV of the first optical processing system.
Embodiment 10. The method of any one of Embodiments 1-9, wherein a second size of the second region corresponds to a second FOV of the second optical processing system.
Embodiment 11. The method of any of one Embodiments 1-9, wherein a second size of the second region is smaller than a second FOV of the first optical processing system.
Embodiment 12. The method of any one of Embodiments 1-11, wherein the first and second regions partially overlap.
Embodiment 13. The method of any one of Embodiments 1-12, wherein (a) or (b) comprises marking the at least one first alignment mark on the first region or the at least one second alignment mark on the second region.
Embodiment 14. The method of Embodiment 13, wherein the first region or the second regions comprises a base coat and a top coat, and wherein (a) or (b) comprises burning the at least one first alignment mark or the at least one second alignment mark on the base coat.
Embodiment 15. The method of any one of Embodiments 1-14, wherein (a) or (b) comprises ablating the at least one first alignment mark on the first region or the at least one second alignment mark on the second region.
Embodiment 16. The method of Embodiment 15, wherein (a) or (b) comprises ablating the at least one first alignment mark on the first region or the at least one second alignment mark on the second region to an ablation depth that is less than a depth of structures to be generated on the first region or the second region.
Embodiment 17. The method of Embodiment 15, wherein the first region or the second region comprises a base coat and a top coat, and wherein (a) or (b) comprises ablating the at least one first alignment mark or the at least one second alignment mark on the base coat.
Embodiment 18. The method of any one of Embodiments 1-17, wherein the at least one first alignment mark comprises one or more guide stars projected on the surface.
Embodiment 19. The method of any one of Embodiments 1-18, wherein the at least one first alignment mark or the at least one second alignment mark is selected from the group consisting of: diamond-shaped alignment marks, cross-shaped alignment marks, manji-shaped alignment marks, and Z-shaped alignment marks.
Embodiment 20. The method of any one of Embodiments 1-19, further comprising using a third optical processing system to ablate one or more structures on the first region or the second region.
Embodiment 21. The method of Embodiment 20, wherein the one or more structures comprise one or more riblets.
Embodiment 22. The method of Embodiment 20 or 21, wherein the third optical processing system is the same as the first optical system or the second optical system.
Embodiment 23. The method of Embodiment 20 or 21, wherein the third optical processing system is different from the first optical processing system or the second optical processing system.
Embodiment 24. A method for processing a surface comprising:
Embodiment 25. The method of Embodiment 24, further comprising:
Embodiment 26. A method for processing a coat layer comprising:
Embodiment 27. The method of Embodiment 26, further comprising: forming the coat layer.
Embodiment 28. A system comprising:
Embodiment 29. The system of Embodiment 28, wherein the at least one first alignment mark comprises a first set of alignment marks and wherein the at least one second alignment mark comprises a second set of alignment marks.
Embodiment 30. The system of Embodiment 28 or 29, wherein the second region is different from the first region.
Embodiment 31. The system of any one of Embodiments 28-30, wherein the first optical processing system or the second optical processing system comprise a laser processing system.
Embodiment 32. The system of any one of Embodiments 28-31, wherein the first optical processing system and the second optical processing system are different.
Embodiment 33. The system of any one of Embodiments 28-31, wherein the first optical processing system and the second optical processing system are the same.
Embodiment 34. The system of any one of Embodiments 28-33, wherein the surface is selected from the group consisting of: a wing of an aircraft, a fuselage of an aircraft, a propeller of an aircraft, a tail of an aircraft, a blade of a wind turbine, and a blade of a gas turbine.
Embodiment 35. The system of any one of Embodiments 28-34, wherein a first size of the first region corresponds to a first field of view (FOV) of the first optical processing system.
Embodiment 36. The system of any one of Embodiments 28-34, wherein a first size of the first region is smaller than a first FOV of the first optical processing system.
Embodiment 37. The system of any one of Embodiments 28-36, wherein a second size of the second region corresponds to a second FOV of the second optical processing system.
Embodiment 38. The system of any one of Embodiments 28-36, wherein a second size of the second region is smaller than a second FOV of the second optical processing system.
Embodiment 39. The system of any one of Embodiments 28-38, wherein the first and second regions partially overlap.
Embodiment 40. The system of any one of Embodiments 28-39, wherein (i) or (ii) comprises marking the at least one first alignment mark on the first region or the at least one second alignment mark on the second region.
Embodiment 41. The system of Embodiment 40, wherein the first region or the second regions comprises a base coat and a top coat, and wherein (i) or (ii) comprises burning the at least one first alignment mark or the at least one second alignment mark on the base coat.
Embodiment 42. The system of any one of Embodiments 28-41, wherein (i) or (ii) comprises ablating the at least one first alignment mark on the first region or the at least one second alignment mark on the second region.
Embodiment 43. The system of Embodiment 42, wherein (i) or (ii) comprises ablating the at least one first alignment mark on the first region or the at least one second alignment mark on the second region to an ablation depth that is less than a depth of structures to be generated on the first region or the second region.
Embodiment 44. The system of Embodiment 43, wherein the first region or the second region comprises a base coat and a top coat, and wherein (i) or (ii) comprises ablating the at least one first alignment mark or the at least one second alignment mark on the base coat.
Embodiment 45. The system of any one of Embodiments 28-44, wherein the at least one first alignment mark comprises one or more guide stars projected on the surface.
Embodiment 46. The system of any one of Embodiments 28-45, wherein the at least one first alignment mark or the at least one second alignment mark is selected from the group consisting of: diamond-shaped alignment marks, cross-shaped alignment marks, manji-shaped alignment marks, and Z-shaped alignment marks.
Embodiment 47. The system of any one of Embodiments 28-46, further comprising a third optical processing system configured to ablate one or more structures on the first region or the second region.
Embodiment 48. The system of Embodiment 47, wherein the one or more structures comprise one or more riblets.
Embodiment 49. The system of Embodiment 47 or 48, wherein the third optical system is the same as the first optical processing system or the second optical processing system.
Embodiment 50. The system of Embodiment 47 or 48, wherein the third optical system is different from the first optical processing system or the second optical processing system.
The present application claims priority to U.S. Provisional Patent Application No. 63/216,371, entitled “SYSTEMS AND METHODS FOR LARGE-SCALE OPTICAL MANUFACTURING,” filed on Jun. 29, 2021, which application is incorporated herein by reference in its entirety for all purposes.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/US2022/034854 | 6/24/2022 | WO |
| Number | Date | Country | |
|---|---|---|---|
| 63216371 | Jun 2021 | US |
