This invention relates to methods for manufacturing optical fibers, and to improved optical fiber preform fabrication techniques.
The Modified Chemical Vapor Deposition (MCVD) method is a widely used approach for the manufacture of optical fibers. In this method, the preparation of the preform from which the optical fiber is drawn involves a glass working lathe, where pure glass or glass soot is formed on the inside of a rotating tube by chemical vapor deposition. Deposition of soot inside the tube allows a high degree of control over the atmosphere of the chemical vapor deposition, and consequently over the composition, purity and optical quality of the preform glass. In particular, the glass making up the central portion or core of the preform should be of the highest purity and optical quality since most of the optical power in the fiber will be carried within this region. Accordingly considerable attention is given to the production aspects and properties of the core. Of special concern in the prior art is the well-known refractive index dip at the very center of the core. This is an artifact primarily of the high temperature used in the collapse steps of the MCVD process. It results from non-equilibrium sublimation of Ge species at the processing temperature. This sublimation depletes the surface layer of Ge resulting in a lower refractive index in the very center of the preform. If this refractive index dip is a source of variability in an otherwise well controlled preform manufacturing process, or if the dip is a large enough fraction of the fiber core to compromise the fiber design intent, it is an undesirable feature.
In addition, over and above the change in the refractive index profile, the concentrations of oxygen-deficient Ge and Si defect (sub-oxide) sites in the central core are increased by the loss of oxygen through the collapsing surface. The stoichiometries of silica and germania are SiO2 and GeO2, respectively, which are preserved in an ideal mixed glass such as Ge-doped silica. It is to be understood that the labels SiO2 and GeO2 refer to an atomic bonding configuration where each Si or Ge atom is bonded to four O atoms. Each O atom bonds to two metal atoms (Si or Ge). Thus the molar ratios are 1:2 for metal to oxygen proportionality, i.e. SiO2 and GeO2. The labels SiO or GeO, known as sub-oxides defects, refer to a variety of atomic bonding configurations where a metal atom (Si or Ge) is bonded to less than four O atoms.
It is of importance with respect to the disclosed invention that the region rich in GeO defects (due to loss of excess oxygen in the collapse process) extends well beyond the region where loss of Ge results in a profile center dip. Both of these effects, the refractive index dip and the defect concentration increase, are well known, and various attempts have been made to eliminate them. One technique is to etch the surface layer on the inside of the tube, i.e. the layer that depletes, in the final stages of the process. This is fairly successful in reducing the index dip but is not completely effective in controlling the sub-oxide defect concentration. Another approach is to heavily dope the last layer(s) deposited, to compensate for lost Germanium. This is only moderately successful in eliminating the refractive index dip, and actually tends to promote the formation of Ge defect centers.
The MCVD technique is widely used in commercial practice and has proved to be a successful and robust process but, as indicated above, certain aspects of the process may still be improved. The improvement envisioned in this invention relates to the properties of the very center section of the core.
It has been noted in the literature that a significant optical loss mechanism in the core of optical fibers produced by MCVD can be created by defect centers that remain in the center of the preform core after consolidation and collapse [Analysis of the fluorescence method of profiling single mode optical fiber preforms—D. L. Philen and W. T. Anderson, Technical Digest, Conference on Optical Fiber Communications (Optical Society of America, Phoenix, Ariz., 1982), paper ThEE7]. The presence of this loss mechanism is particularly obvious when the fibers are exposed to hydrogen or ionizing radiation. The formation of sub-oxide defects is favored by insufficient oxygen supply during soot deposition. These can also be produced during high temperature glass processing. As the temperature is raised during collapse, defects may be formed in both pure and doped silica, with concentrations following a typical thermally activated exponential dependence. However, many of these defects heal upon removal of heat source if the local atomic concentrations do not change. Near the gas-solid interface formed by the inner diameter of the collapsing rod, however, mobile atomic or molecular subunits containing Ge and/or O escape the glass permanently and irreversibly. When the oxygen atoms exit from the glass surface, they may leave behind germanium sub-oxide (GeO) and silicon suboxide (SiO) defect centers.
The confirmation of GeO defects in the collapsed preform is straightforward since they can be stimulated by UV light to fluoresce. It is believed that the GeO defect centers react, more readily than SiO defects, with molecular hydrogen to form a hydride species with a strong UV absorption center with a significant tail in the communications window. (The postulated details of the mechanism leading to excess loss should not be construed as a limitation on the invention.) GeO defects thus have significantly greater potential for eventually causing excess loss in the fiber.
To reduce the number of GeO defect centers produced in the MCVD process, we add a buffer layer of undoped silica as the final step in the glass deposition process before beginning the high temperature collapse step. The buffer layer is preferably undoped silica since the consequences of Si sub-oxide defects with respect to long term fiber loss increases are less than those associated with Ge sub-oxide defects. The effect of making the last layer, which is the surface layer on the inside of the tube, of undoped silica is two-fold. First there are fewer Ge dopant atoms in the surface layer that may become oxygen deficient during the collapse, and thus a reduced potential for Ge defect center formation. Second, and more fundamental, the buffer layer prevents direct diffusion of O, O2, and GexOy species out of the deposited Ge-doped silica glass. Ge-atoms may still diffuse out of the Ge-doped region, across the pure silica region, and then out through free surface of the silica buffer layer, with the net effect of altering the refractive index profile (however a buffer layer slows even that process by orders of magnitude due to the inherent slowness of solid-state diffusion). Most significantly, the loss of atomic O from the glass (whether as O, O2, GexOy, SixOy, etc.) can only occur through the free surface at the solid-gas interface. The net result is substantially reduced loss of GexOy, resulting in substantial elimination of the center dip, as well as substantially reduced net loss of oxygen from the Ge-doped region, resulting in significantly fewer germanium sub-oxide defect sites. The method is also effective where this inside surface layer is lightly Ge (or F) doped with respect to the Ge levels in the rest of the core. It will be understood at this point that any reduction in the nominal concentration of Ge dopant species at the glass surface will reduce the number of potential defects attributable to this loss mechanism. With respect to the refractive index dip, the variability of this feature can be removed by the addition of the silica layer and, if even a reproducible dip in the center of the profile is undesirable, most of the silica layer can be etched away in the latter stages of collapse avoiding both the profile dip and the increase in the GeO defects in this region.
FIGS. 3 is a schematic illustration of the defect forming mechanism that is addressed by the invention;
With reference to
With reference to
We achieve this by modifying the MCVD process to form a buffer layer at the end of the glass deposition phase, as shown in
For the purpose of illustration, a typical preform with a known triple clad design will be described. In this illustration the modified layers are produced by MCVD. The outside cladding layer may also be produced by the same method but in state of the art MCVD processes the outer cladding, and even inner modified layers, may be produced by the known rod-in-tube method. It should be understood that the embodiments described are representative of a wide variety of optical fiber preform designs. The invention is directed to forming improved core structures useful in any of these designs. In many cases, the invention will be applied to the production of core rods, which are then inserted into cladding tubes to produce the final preform.
The following is a description of a typical finished preform. Optical fibers produced from the preform will have index profiles that are smaller replicas of the index profile of the preform. The preform index profile in this example comprises four regions. These are the core region, the trench region, the ring region, and the cladding.
The core consists of a raised index region extending from the central axis of the preform to radius a with the radial variation of the normalized index difference, Δr, described by the equation:
Δr=Δ(1−(r/a)α)−Δdip ((b−r)/b)γ (1)
The parameters Δdip, b, and γ, i.e. the central dip depth, the central dip width, and the central dip shape, respectively, are artifacts of MCVD production methods.
The equation describing the core shape consists of the sum of two terms. The first term generally dominates the overall shape and describes a shape commonly referred to as an alpha profile. The second term describes the shape of a centrally located index depression (depressed relative to the alpha profile). The core region generally consists of silica doped with germanium at concentrations less than 10 wt % at the position of maximum index, and graded with radius to provide the shape described by equation (1).
Nominal values for the above parameters that yield fiber with the desired transmission properties are:
In general, the range of variation for these parameters may be:
Δ=0.30˜0.70%
a=2.0˜4.5 μm
α=1˜15
The trench region is an annular region surrounding the core region with an index of refraction that is less than that of the SiO2 cladding. The index of refraction in this region is typically approximately constant as a function of radius, but is not required to be flat. The trench region generally consists of SiO2, doped with appropriate amounts of fluorine and germania to achieve the desired index of refraction and glass defect levels.
Nominal trench parameters are:
In general, the range of variation for these parameters may be:
Δ=−0.25˜−0.10%
a=4.0˜8.0 μm
The ring region is an annular region surrounding the trench region with an index of refraction that is greater than that of the SiO2 cladding. The index of refraction in this region is typically constant as a function of radius, but is not required to be flat. The ring region generally consists of SiO2, doped with appropriate amounts of germania to achieve the desired index of refraction.
Nominal ring parameters are:
In general, the range of variation for these parameters may be:
Δ=−0.10˜−0.60%
a=7.0˜10.0 μm
The cladding region is an annular region surrounding the ring, usually consisting of undoped SiO2. However, internal to the cladding region may also exist an additional region of fluorine-doped glass, of the appropriate index level and radial dimensions, to improve bending loss characteristics. The cladding region generally extends to 62.5 μm radius.
An idealized preform profile that is representative of the preforms having in general the structure just described is shown in
By contrast, we have found that a deliberately produced core dip is beneficial if the core dip results from a deposited buffer layer of undoped or lightly doped silica and the dip is not too wide compared to the diameter of the core. The buffer layer eliminates the opportunity for direct out-diffusion of oxygen from the last doped region of the final MCVD tube and thereby reduces the defects sub-oxide described earlier. The buffer layer is represented in
In terms of functional features of the invention, it is desirable to have the electric field of the LP01 mode, the primary signal mode, have a maximum at the centerline of the optical fiber core.
It will be evident to those skilled in the art that implementation of the invention may be straightforward, and may simply involve turning off, or reducing the GeCl4 flow rate toward the end of the deposition process.
When MCVD soot deposition and consolidation is complete the tube is collapsed by known techniques, i.e. heating the tube to above the glass softening temperature, i.e. >2000-2400° C. to allow the surface tension of the glass tube to slowly shrink the tube diameter, finally resulting, after multiple passes of the torch, in the desired solid rod. It is during this step in the conventional process that most of the defect formation described above occurs.
The effect of the buffer layer on the defect forming process is schematically shown in
It can be appreciated from
To the extent possible, it will usually be desirable to approximately match the thickness of the buffer layer to the diffusion length of the dopants. This will tend to produce a profile resembling that shown in
Layers considerably thicker than those just described may be deposited if desired, and thicker layers may be similarly effective. In either case, an optional step in the process is to etch the inner surface of the MCVD tube during the later stages of collapse. This late etch step may be used to remove at least portions of the buffer layer at a stage in the process where much of the potential for out-diffusion of dopants has passed (i.e. the consolidation phase). Etch during collapse in MCVD is typically performed in the prior art by flowing a F-bearing species such as C2F6, SF6, or SiF4, often in the presence of O2.
In some optical fiber designs, a profile with a large core dip (see
All benefits derived from the practice of the invention for fibers produced by MCVD methods apply equally to fibers with cores fabricated by the plasma CVD or PCVD method. In those methods, like MCVD, material is deposited inside a substrate tube, such that the outer layers of the core are deposited first 10 and the inner most layers (at the centerline of the fiber) are deposited last. Plasma CVD is a true chemical vapor deposition process where the desired material is directly formed on the substrate, unlike MCVD where particles are formed in the gas phase and then deposited on the substrate and sintered in a subsequent step. In spite of the differences, both methods produce a hollow core that must be collapsed in a high temperature step to form a solid rod. Both are susceptible to loss of Ge leading to a center dip, as well as the net loss of oxygen resulting in germanium suboxide defects which may impact fiber loss. Thus the addition of a final silica buffer layer will have all attendant benefits for PCVD fibers as for MCVD fibers.
The invention may also find utility in the outside vapor deposition process (OVD), since a collapse step is also required in that process. The profile center dip is also known to be problematic in OVD fabricated fibers, including those of recent vintage; it can be inferred that GeO defect formation occurs concomitantly as described earlier. In OVD the core is fabricated by deposition of silica and doped silica soot on a mandrel, with subsequent dehydration and consolidation steps. A sintered glass body with a central hole remains. As a final step the core must be collapsed, either prior to or during the draw step. If a silica buffer layer, as described above, is deposited fist in the OVD process, so that it forms the innermost layer in the core, being the exposed surface during collapse, then it will perform a beneficial role similar to that described above for the MCVD process. The principle difference between OVD and MCVD (or PCVD) is that diffusion of Ge into the silica buffer layer will be more pronounced for OVD, since diffusion is facile during the dehydration step in the presence of Cl2. This may raise the dopant level in the silica layer and raise the likelihood of germanium suboxide defects. However, most of the benefit of the invention should still be obtained.
The invention is useful in forming entire preforms by MCVD (or PCVD or OVD), or for producing core rods for rod-in-tube, OVD, VAD, or plasma overspray methods. Rod-in-tube methods represent a preferred embodiment of the invention. Typical rod-in-tube methods are described in conjunction with
After assembly of the rod 92 and tube 91, the tube is collapsed onto the rod to produce the final preform 93, shown in
In a useful variation on the standard rod-in-tube technique, the MCVD core rod may be used as a substrate for soot deposition. In this way, cladding layers or partial cladding layers may be deposited using soot techniques.
Although the MCVD process as described above uses a flame torch and a fuel of mixed oxygen and hydrogen, plasma torches or electrically heated furnaces may also be used in these kinds of processes. Also, gas torches other than oxy-hydrogen torches can be used.
The optical fiber preform, as described above, is then used for drawing optical fiber.
Coating materials for optical fibers are typically urethanes, acrylates, or urethane-acrylates, with a UV photoinitiator added. The apparatus is
Designs for optical fibers exist in the prior art in which a key feature is the presence of a region of local minimum in refractive index in the neighborhood of the fiber centerline. These designs may use a centerline value of refractive index that is greater than, equal to, or less than that of the outer cladding glass (nominally pure silica), but where the higher refractive index of the surrounding ring is primarily responsible for forming the optical waveguide. These are sometimes referred to as “coax designs” or “ring designs,” and often result in large effective areas by virtue of pushing the optical power away from the fiber centerline. In contrast, the present invention uses the silica buffer layer in processing the core material to improve the optical quality of the glass. The present invention is further differentiated from coax or ring designs in that any impact on the optical transmission properties of the fiber will generally be small, on the order of 10% or less. In general the buffer layer, if not etched away during final stages of collapse, and thus allowed to remain in the preform, will be less than 1 micron in radius in the final fiber, and preferably less than 0.5 microns, and even more desirably less than 0.25 microns. For a given waveguide design, very similar properties can be obtained with and without the presence of a silica (or lightly-doped silica) buffer layer by minor adjustments in the other design parameters, such as the widths and index values of the features shown in
The method is also useful to eliminate the undesirable impact of burnoff in multimode fiber fabrication, where fiber bandwidth depends critically on precise control of the alpha shape of the core (see-previous definition). One method in the prior art relies on etching away the center dip region during collapse. Though effective in eliminating the center dip or burnoff region, it does not address the problem of increased defects and associated loss. Multimode fiber has a high core delta (1 to 2% Δ) and is naturally susceptible to a high level of GeO defects. Multimode fiber is also commonly used in the 850 nm window, which is closer to the UV resonance of GeH than the case of single mode fiber transmission near 1550 nm.
Various additional modifications of this invention will occur to those skilled in the art. All deviations from the specific teachings of this specification that basically rely on the principles and their equivalents through which the art has been advanced are properly considered within the scope of the invention as described and claimed.