Claims
- 1. A method for producing a compound semiconductor device, said method comprising the steps of:
- preparing a substrate; and
- forming, on the substrate, a crystal layer with materials belonging to at least first and second different groups of chemical elements on the periodic table of elements under a crystal growth condition under which a flux ratio is a value equal to the number of arrival molecules of the material of the first group having a higher vapor pressure divided by the number of arrival molecules of the material of the second group having a lower vapor pressure is in a range from 0.6 to 1.0 at a substrate temperature in a range from 300.degree. C. to 400.degree. C.
- 2. A method for producing a compound semiconductor device according to claim 1, wherein the first and second groups are respectively chemical elements belonging to groups V and III on the periodic table of elements.
- 3. A method for producing a compound semiconductor device according to claim 2, wherein the materials belonging to the groups V and III on the periodic table of elements are respectively As and at least Ga.
- 4. A method for producing a compound semiconductor device according to claim 1, wherein a plurality of the crystal layers are formed on the substrate and at least one layer of the crystal layers is produced by the MEE method.
- 5. A method for producing a compound semiconductor device according to claim 1, further comprising a step of forming an active layer on the crystal layer.
- 6. A method for producing a compound semiconductor device according to claim 5, further comprising a step of forming lower and upper light confinement layers sandwiching the active layer and wherein the active layer and the lower and upper light confinement layers are produced by the MEE method.
- 7. A method for producing a compound semiconductor device according to claim 5, further comprising a step of forming lower and upper cladding layers sandwiching the active layer and wherein the active layer and a part of the lower and upper cladding layers are produced by the MEE method.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2-313438 |
Nov 1990 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 07/794,464 filed Nov. 19, 1991, now abandoned.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
4878218 |
Pessa et al. |
Oct 1989 |
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Non-Patent Literature Citations (3)
Entry |
Y. Horikoshi, et al "Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy" Japanese J. Appl. Phy. vol. 25, No. 10, Oct. 1986 pp. L868-L870. |
H. Kunzel, et al "Quantitative Evaluation of Substrate Temperature Dependence of Ge Incorporation in GaAs During Molecular Beam Epitaxy" Applied Physics 22, 23-30 (1980). |
S. Miyazawa, et al "Low-temperature molecular beam epitaxy growth of single quantum well GaAs/AlGaAs lasers" Japanese J. Appl. Phys. 2, Lett. vol. 30, No. 5B pp. L921-L923, 15 May 1991 (abstract only). |
Continuations (1)
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Number |
Date |
Country |
Parent |
794464 |
Nov 1991 |
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