Claims
- 1. An electron emission device, comprising:
a substrate; a first layer supported by the substrate, the first layer comprising a conductive material; an electron emission tip electronically connected with the first layer; and a second layer electrically disposed between the first layer and the electron emission tip, the second layer comprising microcrystalline silicon.
- 2. The electron emission device of claim 1 further comprising a third layer electrically disposed between the second layer and the electron emission tip, the third layer being electrically resistive.
- 3. The electron emission device of claim 1 wherein the second and third layers are physically disposed between the first layer and the electron emission tip.
- 4. The electron emission device of claim 1 wherein the second layer consists essentially of conductively-doped microcrystalline silicon.
- 5. The electron emission device of claim 1 wherein the first layer comprises a metal.
- 6. The electron emission device of claim 1 wherein the first layer comprises three sub-layers, the three sub-layers being an aluminum-containing sub-layer between two chromium-containing sub-layers.
- 7. The electron emission device of claim 1 wherein the third layer comprises boron-doped amorphous silicon.
- 8. The electron emission device of claim 1 wherein:
the first layer comprises three sub-layers, the three sub-layers being an aluminum-containing sub-layer between two chromium-containing sub-layers; the second layer comprises conductively-doped microcrystalline silicon; and the third layer comprises boron-doped amorphous silicon.
- 9. The electron emission device of claim 8 wherein the second layer consists essentially of the conductively-doped microcrystalline silicon.
- 10. The electron emission device of claim 8 wherein the second layer consists essentially of the conductively-doped microcrystalline silicon and contacts one of the chromium-containing sub-layers.
- 11. A field emission display device, comprising:
a baseplate; a first layer supported by the baseplate, the first layer comprising a conductive material; a plurality of electron emission tips electronically connected with the first layer and supported by the baseplate; a second layer electrically disposed between the first layer and the electron emission tips, the second layer comprising microcrystalline silicon and being supported by the baseplate; a faceplate spaced from the baseplate; spacers between the faceplate and the baseplate and supporting the faceplate and baseplate in spaced relation to one another; and phosphor molecules supported on the faceplate and spaced from the electron emission tips.
- 12. The device of claim 11 further comprising a third layer electrically disposed between the second layer and the electron emission tips, the third layer being electrically resistive.
- 13. The device of claim 11 wherein the second and third layers are physically disposed between the first layer and the electron emission tips.
- 14. The device of claim 11 wherein the second layer consists essentially of conductively-doped microcrystalline silicon.
- 15. The device of claim 11 wherein the first layer comprises a metal.
- 16. The device of claim 11 wherein the first layer comprises three sub-layers, the three sub-layers being an aluminum-containing sub-layer between two chromium-containing sub-layers.
- 17. The device of claim 11 wherein the third layer comprises boron-doped amorphous silicon.
- 18. The device of claim 11 wherein:
the first layer comprises three sub-layers, the three sub-layers being an aluminum-containing sub-layer between two chromium-containing sub-layers; the second layer comprises conductively-doped microcrystalline silicon; and the third layer comprises boron-doped amorphous silicon.
- 19. The device of claim 18 wherein the second layer consists essentially of the conductively-doped microcrystalline silicon.
- 20. A method of forming an electron emission device, comprising:
providing a substrate; forming a conductive layer over the substrate; forming a microcrystalline-silicon-containing layer over the conductive layer; forming a resistor layer over the microcrystalline-silicon-containing layer; and forming an emitter tip over the resistor layer.
- 21. The method of claim 20 wherein the forming the microcrystalline-silicon-containing layer comprises chemical vapor deposition in a reaction chamber utilizing silane and hydrogen as precursor gasses, the ratio of silane to hydrogen being from about 1:30 to about 1:60.
- 22. The method of claim 21 wherein the silane is flowed into the reaction chamber at a rate of from about 50 sccm to about 100 sccm.
- 23. The method of claim 20 wherein the microcrystalline-silicon-containing layer consists essentially of microcrystalline silicon.
- 24. The method of claim 20 wherein the microcrystalline-silicon-containing layer consists essentially of conductively-doped microcrystalline silicon.
- 25. The method of claim 20 wherein the conductive layer comprises a metal.
- 26. The method of claim 20 wherein the conductive layer comprises three sub-layers, the three sub-layers being an aluminum-containing sub-layer between two chromium-containing sub-layers.
- 27. The method of claim 20 wherein the resistor layer comprises boron-doped amorphous silicon.
- 28. The method of claim 20 wherein:
the conductive layer comprises three sub-layers, the three sub-layers being an aluminum-containing sub-layer between two chromium-containing sub-layers; the microcrystalline-silicon-containing layer consists essentially of conductively-doped microcrystalline silicon; and the resistor layer comprises boron-doped amorphous silicon.
- 29. A method of forming an electron emission device, comprising:
providing a baseplate; forming a conductive layer over the baseplate; forming a microcrystalline-silicon-containing layer over the conductive layer; forming a resistor layer over the microcrystalline-silicon-containing layer; forming a plurality of emitter tips over the resistor layer and in electrical connection with the conductive layer; providing a faceplate having phosphor molecules provided thereon in spaced relation to the baseplate with the phosphor molecules being spaced from the emitter tips.
- 30. The method of claim 29 wherein the forming the microcrystalline-silicon-containing layer comprises chemical vapor deposition in a reaction chamber utilizing silane and hydrogen as precursor gasses, the ratio of silane to hydrogen being from about 1:30 to about 1:60.
- 31. The method of claim 30 wherein the silane is flowed into the reaction chamber at a rate of from about 50 sccm to about 100 sccm.
- 32. The method of claim 29 wherein the microcrystalline-silicon-containing layer consists essentially of microcrystalline silicon.
- 33. The method of claim 29 wherein the microcrystalline-silicon-containing layer consists essentially of conductively-doped microcrystalline silicon.
- 34. The method of claim 29 wherein the conductive layer comprises a metal.
- 35. The method of claim 29 wherein the conductive layer comprises three sub-layers, the three sub-layers being an aluminum-containing sub-layer between two chromium-containing sub-layers.
- 36. The method of claim 29 wherein the resistor layer comprises boron-doped amorphous silicon.
- 37. The method of claim 29 wherein:
the conductive layer comprises three sub-layers, the three sub-layers being an aluminum-containing sub-layer between two chromium-containing sub-layers; the microcrystalline-silicon-containing layer consists essentially of conductively-doped microcrystalline silicon; and the resistor layer comprises boron-doped amorphous silicon.
PATENT RIGHTS STATEMENT
[0001] This invention was made with Government support under Contract No. DABT63-97-C-0001 awarded by Advanced Research Projects Agency (ARPA). The Government has certain rights in this invention.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09323557 |
Jun 1999 |
US |
Child |
09888125 |
Jun 2001 |
US |