Patent Grant
10014011
Disclosed are methods including depositing a plasmonic material at a temperature of at least 150° C.; and forming at least a peg of a near field transducer (NFT) from the deposited plasmonic material.
Also disclosed are near field transducers (NFTs) that includes a peg, the peg having an average grain size of not less than 75 nm.
Also disclosed are methods that include depositing a plasmonic material at a temperature of at least 150° C.; and forming at least a peg of a near field transducer (NFT) from the deposited plasmonic material, wherein neither the deposited material is annealed nor the peg is annealed once formed, and the peg has an average grain size of not less than 50 nm.
The above summary of the present disclosure is not intended to describe each disclosed embodiment or every implementation of the present disclosure. The description that follows more particularly exemplifies illustrative embodiments. In several places throughout the application, guidance is provided through lists of examples, which examples can be used in various combinations. In each instance, the recited list serves only as a representative group and should not be interpreted as an exclusive list.
The figures are not necessarily to scale. Like numbers used in the figures refer to like components. However, it will be understood that the use of a number to refer to a component in a given figure is not intended to limit the component in another figure labeled with the same number.
Heat assisted magnetic recording (referred to through as HAMR) utilizes radiation, for example from a laser, to heat media to a temperature above its curie temperature, enabling magnetic recording. In order to deliver the radiation, e.g., a laser beam, to a small area (on the order of 20 to 50 nm for example) of the medium, a NFT is utilized. During a magnetic recording operation, the NFT absorbs energy from a laser and focuses it to a very small area; this can cause the temperature of the NFT to increase. The temperature of the NFT can be elevated up to about 400° C. or more.
The very high temperatures that the NFT reaches during operation can lead to diffusion of the material of the NFT (for example gold) from the peg and towards the disk. In addition, a portion of the NFT may be exposed at the air bearing surface of the recording head and is thus subject to mechanical wearing. NFT performance is greatly influenced by the heat and mechanical stress during HAMR operation. It would therefore be advantageous to have NFT devices that are more durable.
Disclosed devices can offer the advantage of providing more efficient transfer of energy from an energy source to the magnetic storage media to be heated, a smaller focal point at the point of heating, or some combination thereof. In some embodiments, disclosed devices can be used within other devices or systems, such as magnetic recording heads, more specifically, thermally or heat assisted magnetic recording (HAMR) heads, or disc drives that include such devices.
Disclosed herein are NFTs and devices that include such NFTs.
For heat assisted magnetic recording (HAMR), electromagnetic radiation, for example, visible, infrared or ultraviolet light is directed onto a surface of the data storage media to raise the temperature of a localized area of the media to facilitate switching of the magnetization of the area. Recent designs of HAMR recording heads include a thin film waveguide on a slider to guide light toward the storage media and a near field transducer to focus the light to a spot size smaller than the diffraction limit. While
An insulating material 62 separates the coil turns. In one example, the substrate can be AlTiC, the core layer can be Ta2O5, and the cladding layers (and other insulating layers) can be Al2O3. A top layer of insulating material 63 can be formed on the top pole. A heat sink 64 is positioned adjacent to the sloped pole piece 58. The heat sink can be comprised of a non-magnetic material, such as for example Au.
As illustrated in
The storage media 16 is positioned adjacent to or under the recording head 30. The waveguide 42 conducts light from a source 78 of electromagnetic radiation, which may be, for example, ultraviolet, infrared, or visible light. The source may be, for example, a laser diode, or other suitable laser light source for directing a light beam 80 toward the waveguide 42. Specific exemplary types of light sources 78 can include, for example laser diodes, light emitting diodes (LEDs), edge emitting laser diodes (EELs), vertical cavity surface emitting lasers (VCSELs), and surface emitting diodes. In some embodiments, the light source can produce energy having a wavelength of 830 nm, for example. Various techniques that are known for coupling the light beam 80 into the waveguide 42 may be used. Once the light beam 80 is coupled into the waveguide 42, the light propagates through the waveguide 42 toward a truncated end of the waveguide 42 that is formed adjacent the air bearing surface (ABS) of the recording head 30. Light exits the end of the waveguide and heats a portion of the media, as the media moves relative to the recording head as shown by arrow 82. A near-field transducer (NFT) 84 is positioned in or adjacent to the waveguide and at or near the air bearing surface. The heat sink material may be chosen such that it does not interfere with the resonance of the NFT.
Although the example of
Typical methods of forming NFTs include room temperature sputter deposition of a film followed by an annealing step before the film is patterned into a peg of a NFT (the disk of a NFT may not necessarily typically be annealed). The most common mechanism of NFT failure is peg recession when the NFT is subjected to high operating temperatures. Although the exact origin of peg recession is yet to be understood, the current hypotheses point to several sources of vacancies in peg/disc materials. The sources of vacancies could originate from trapped voids or micro-pores during film growth and the presence of grain boundaries. During high temperature HAMR operation, large grain growth of the NFT peg and disk have been observed, possibly at the expense of these sources of vacancies such voids and grain boundaries. Another aspect of NFT failure is believed to be related to growth induced stress in the NFT during peg and disk deposition. Growth induced stress adds to all other sources of stress such as stress due to peg patterning, stress due to surrounding dielectrics and slider processes for example. Aggregated stress induced NFT failure may be detrimental at the high temperatures at which HAMR operates.
Disclosed herein are methods of forming NFTs that may serve to address the problems noted above. Disclosed methods deposit the materials that will ultimately become the NFT at higher temperatures. The higher deposition temperatures can be close to or in some embodiments even above HAMR operating temperatures, but still within thermal constraints imposed by other structures or materials within the head. Deposition of the NFT material at high temperatures can increase the probability of having fewer grains, grains having larger dimensions, or both making up the peg. In some embodiments, deposition of the NFT material at high temperatures can mores specifically increase the probability of having fewer grains, e.g., one or two, in the peg whose length is on the order of 50 to 100 nm. Reducing the number of grains, increasing the dimensions of the grain, or both may decrease the number of grain boundaries that can act as a source of vacancies, and may therefore decrease peg recession at high temperatures.
In some embodiments, materials that will become a NFT, or a peg (or rod) of a NFT can be deposited at temperatures of not less than 25° C., in some embodiments not less than 50° C., in some embodiments not less than 100° C., in some embodiments not less than 150° C., in some embodiments not less than 175° C., in some embodiments not less than 180° C., in some embodiments not less than 195° C., or in some embodiments not less than 220° C. In some embodiments, materials that will become a NFT, or a peg (or rod) of a NFT can be deposited at temperatures of not greater than 225° C. Deposition at a noted temperature means that the substrate upon which deposition is occurring is being maintained at the noted temperature.
In some embodiments, the material that will become a NFT, or a peg (or rod) of a NFT can be deposited using sputter deposition, ion-beam deposition, evaporation, molecular beam epitaxy, or chemical vapor deposition for example. Appropriate deposition conditions, such as power, pressure (or gas flow), or substrate temperature for example, can be chosen such that the film has low stress, good within wafer thickness uniformity, and low roughness for example.
Materials deposited using high temperature thickness can have advantageous properties regardless of the thickness of the layer deposited. It should be noted that experimental results are shown below for films having thicknesses of about 150 nm, but the properties exhibited by such films would be expected to be seen in films having any thickness.
In some embodiments various materials can be utilized for NFTs (pegs, rods, disks, or any combination thereof). In some embodiments, the material may be a plasmonic material or an alloy thereof. In some embodiments, the material may be gold (Au), silver (Ag), copper (Cu), aluminum (Al), or any one of those with a secondary element alloyed or doped therein. In some embodiments, the material may be gold (Au), for example. In some embodiments, the materials for a NFT (pegs, rods, disks, or any combination thereof) can include those found in some embodiments, the secondary atom can include those disclosed in U.S. Pat. No. 8,427,925, U.S. Patent Publication Number 20140050057, U.S. patent application Ser. No. 13/923,925 entitled MAGNETIC DEVICES INCLUDING FILM STRUCTURES, U.S. Patent Application filed on the same day herewith U.S. application Ser. No. 14/313,651 entitled MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME, U.S. Patent Application filed on the same day herewith U.S. application Ser. No. 14/313,528 entitled MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME, and U.S. Patent Application filed on the same day herewith U.S. application Ser. No. 14/313,717 entitled MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME, the entire disclosures of which are all incorporated herein by reference thereto. In one embodiment that employs solid solution hardening, Au is co-sputtered with one of the following elements: Cu, Rh, Ru, V or Zr, or an Au alloy is deposited directly from an alloy target, on Si substrates at room temperature. The doping level varies between 0.5% and 30% and the film thickness varies between 150 nm and 300 nm. The Au alloy may include Au and at least one of: Cu, Rh, Ru, Ag, Ta, Cr, Al, Zr, V, Pd, Ir, Co, W, Ti, Mg, Fe and Mo. In other embodiments, the film thickness can be as low as 10 nm. Considering the impact on NFT coupling efficiency, in some embodiments, the maximum doping levels have been determined to be 30% for Cu, 2% for Rh, and 1% for Ru.
In some embodiments, a material that will become a NFT, or a peg (or rod) of a NFT can be deposited on a seed layer for example. Use of a seed layer can control surface morphology and reduce surface roughness. Illustrative materials for seed layers can include zirconium nitride (ZrN), titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), zirconium (Zr), tantalum (Ta), nickel (Ni), chromium (Cr), and titanium tungsten (TiW) for example. In some embodiments seed layers can have a thickness that is not less than 5 Å and in some embodiments, a seed layer can have a thickness that is not greater than 20 Å.
Use of high temperature deposition may require that often used photoresist be replaced with a material that is stable at higher temperatures. In some embodiments therefore photoresist (if utilized in a process scheme) can be replaced with materials such as oxide layers like SiO2, Al2O3, or amorphous carbon for example. In some embodiments where it may be desired to form a disk of a NFT using high temperature deposition, photoresist that is typically utilized for formation of the disk can be replaced with illustrative oxides or amorphous carbon for example.
Use of high temperature deposition may advantageously render a post-deposition annealing step unnecessary. Films or layers deposited at high temperatures may have acceptable, or in some embodiments even advantageous or desirable properties without subjecting the film to a post-deposition annealing step.
Disclosed methods can also include a step or steps to form a peg of a NFT or a NFT from a high temperature deposited film. In some embodiments, a step of patterning can be included, a step of patterning can include one or more than one step and can utilize known patterning processes including, for example photolithography, etching, etc. In some embodiments, a step of forming a peg can also include using removal methods, such as etching, etc.
Disclosed methods can also include a step or steps to form a disk of a NFT or a NFT from a room temperature deposited or a high temperature deposited film. In some embodiments, a step of patterning can be included, a step of patterning can include one or more than one step and can utilize known patterning processes including, for example photolithography, etching, etc. In some embodiments where a high temperature deposition process is being utilized to form a disk of a NFT, a mold of a material that is more resistant to higher temperatures can be utilized. Illustrative materials can include, for example oxide layers such as SiO2 or Al2O3 for example, or amorphous carbon, for example. In some embodiments, a step of forming a disk, whether done with photoresist or otherwise, can also include using removal methods, such as etching, etc.
Pegs, and/or other structures formed using disclosed methods can have various properties. In some embodiments, pegs and/or other structures formed using disclosed methods can have grain sizes that are larger in comparison to pegs and/or other structures formed by depositing materials at lower temperatures. In some embodiments, materials formed using disclosed methods can have average grain sizes that are not less than 20 nm, in some embodiments not less than 40 nm, in some embodiments not less than 50 nm, in some embodiments not less than 60 nm, or in some embodiments not less than 75 nm for example. In some embodiments, materials formed using high temperature deposition followed by an anneal can have an average grain size that is not less than 40 nm, in some embodiments not less than 50 nm, in some embodiments not less than 60 nm, or in some embodiments not less than 70 nm for example. It should be noted that materials deposited using methods other than disclosed herein often have average grain sizes from 10 to 20 nm, whereas materials deposited using high temperature deposition may have average grain sizes from 50 nm to 70 nm or even 100 nm, for example. It should be noted that materials deposited using methods other than disclosed herein and subsequently annealed often have average grain sizes from 30 to 40 nm, whereas materials deposited using high temperature deposition and then subsequently annealed may have average grain sizes from 70 nm to 80 nm, for example.
While the present disclosure is not so limited, an appreciation of various aspects of the disclosure will be gained through a discussion of the examples provided below.
High Temperature Deposition
Gold (Au) was deposited under different conditions and the grain sizes of the Au grains were determined using atomic force microscopy (AFM). Sample 1 was a 150 nm Au layer sputter deposited at room temperature without a seed layer; Sample 2 was a 150 nm Au layer sputter deposited at 225° C. without a seed layer; and Sample 3 was a 150 nm Au layer sputter deposited at 190° C. on a 5 Å Zr seed layer. The deposition parameters ranged from a power of 100-1500 W, a pressure of 0.2-5 mT, and an argon (Ar) gas flow of 20-200 sccm.
High Temperature Deposition Followed by Annealing
Au films were deposited with a 5 Å Zr seed layer at room temperature and at 190° C., and then oven annealed at 225° C. for about 3 hours, and then subsequently oven annealed at 300° C. for about 3 hours. The room temperature deposited Au had a size ranging from 10 nm to 90 nm with an average of 40 nm as deposited, a size ranging from 30 nm to 110 nm with an average of 62 nm after being annealed at 225° C. for 3 hours, and a size ranging from 30 nm to 130 nm with an average of 66 nm after being further annealed at 300° C. for 3 hours. The 190° C. deposited Au had a size ranging from 50 nm to 200 nm with an average of 77 nm as deposited, a size ranging from 50 nm to 180 nm with an average of 77 nm after being annealed at 225° C. for 3 hours, and a size ranging from 50 nm to 160 nm with an average of 70 nm after being further annealed at 300° C. for 3 hours.
As seen by comparing these results, the room temperature deposited films show tendencies towards increased grain sizes upon an increase in annealing temperature. The 190° C. deposited film has a stable grain size to being with and does not show further grain growth upon annealing.
Optical Properties
Au films were deposited with a 5 Å Zr seed layer at room temperature and at 190° C. The real part of the refractive index (n) and the imaginary part (κ) were measured. A figure of merit (FOM(eq6)) was also calculated as:
where ε1=n2−k2, ε2=2 nk. Table 1 below shows the results.
As seen, the film deposited at high temperatures had a higher FOM than the room temperature deposited and annealed film. This may be due to the combination of the plasmonic nature of the seed film and the ultra-smooth surface of the Au film formed by the high deposition method. Once the optical properties have been measured, the temperature of a peg formed from such a film functioning in a HAMR environment could then be modeled.
Thermal Conductivities
The thermal conductivities of Au films having various thicknesses sputter deposited on a 5 Å Zr seed layer at room temperature and 280° C. were measured as grown and after a 3 hour anneal at 225° C. Table 2 shows the results. The unit of thermal conductivity in Table 2 is W/m-K.
As seen from Table 2, the values of measured thermal conductivities are higher for high temperature deposited Au than room temperature deposited Au, and are close to the values for room temperature deposited after being annealed at 225° C. for 3 hours. This indicates that high temperature deposited films can provide thermal transport benefits similar to that of room temperature/annealed films.
Stress Relaxation Temperatures
Stress versus temperature measurements were taken on 150 nm films sputter deposited on a 5 Å Zr seed layer at room temperature, at room temperature and annealed at 225° C. for 3 hours, and at 190° C.
All scientific and technical terms used herein have meanings commonly used in the art unless otherwise specified. The definitions provided herein are to facilitate understanding of certain terms used frequently herein and are not meant to limit the scope of the present disclosure.
As used in this specification and the appended claims, “top” and “bottom” (or other terms like “upper” and “lower”) are utilized strictly for relative descriptions and do not imply any overall orientation of the article in which the described element is located.
As used in this specification and the appended claims, the singular forms “a”, “an”, and “the” encompass embodiments having plural referents, unless the content clearly dictates otherwise.
As used in this specification and the appended claims, the term “or” is generally employed in its sense including “and/or” unless the content clearly dictates otherwise. The term “and/or” means one or all of the listed elements or a combination of any two or more of the listed elements.
As used herein, “have”, “having”, “include”, “including”, “comprise”, “comprising” or the like are used in their open ended sense, and generally mean “including, but not limited to”. It will be understood that “consisting essentially of”, “consisting of”, and the like are subsumed in “comprising” and the like. For example, a conductive trace that “comprises” silver may be a conductive trace that “consists of” silver or that “consists essentially of” silver.
As used herein, “consisting essentially of,” as it relates to a composition, apparatus, system, method or the like, means that the components of the composition, apparatus, system, method or the like are limited to the enumerated components and any other components that do not materially affect the basic and novel characteristic(s) of the composition, apparatus, system, method or the like.
The words “preferred” and “preferably” refer to embodiments that may afford certain benefits, under certain circumstances. However, other embodiments may also be preferred, under the same or other circumstances. Furthermore, the recitation of one or more preferred embodiments does not imply that other embodiments are not useful, and is not intended to exclude other embodiments from the scope of the disclosure, including the claims.
Also herein, the recitations of numerical ranges by endpoints include all numbers subsumed within that range (e.g., 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, 5, etc. or 10 or less includes 10, 9.4, 7.6, 5, 4.3, 2.9, 1.62, 0.3, etc.). Where a range of values is “up to” a particular value, that value is included within the range.
Use of “first,” “second,” etc. in the description above and the claims that follow is not intended to necessarily indicate that the enumerated number of objects are present. For example, a “second” substrate is merely intended to differentiate from another infusion device (such as a “first” substrate). Use of “first,” “second,” etc. in the description above and the claims that follow is also not necessarily intended to indicate that one comes earlier in time than the other.
Thus, embodiments of METHODS OF FORMING MATERIALS FOR AT LEAST A PORTION OF A NFT AND NFTS FORMED USING THE SAME are disclosed. The implementations described above and other implementations are within the scope of the following claims. One skilled in the art will appreciate that the present disclosure can be practiced with embodiments other than those disclosed. The disclosed embodiments are presented for purposes of illustration and not limitation.
This application is a continuation application of U.S. application Ser. No. 14/313,504 entitled METHODS OF FORMING MATERIALS FOR AT LEAST A PORTION OF A NFT AND NFTS FORMED USING THE SAME, filed Jun. 24, 2014, and which claims priority to U.S. Provisional Application Nos. 61/838,397 entitled “METHODS OF FORMING AU AND AU ALLOYS” filed on Jun. 24, 2013, the disclosure of which is incorporated herein by reference thereto.
| Number | Name | Date | Kind |
|---|---|---|---|
| 3906791 | Lynnworth | Sep 1975 | A |
| 4492873 | Dmitriev | Jan 1985 | A |
| 5472777 | Kineri | Dec 1995 | A |
| 5482611 | Helmer | Jan 1996 | A |
| 5849093 | Andra | Dec 1998 | A |
| 5945681 | Tokiguchi | Aug 1999 | A |
| 6130436 | Renau | Oct 2000 | A |
| 6144098 | Iyer | Nov 2000 | A |
| 6589676 | Gui | Jul 2003 | B1 |
| 6632483 | Callegari | Oct 2003 | B1 |
| 6641932 | Xu | Nov 2003 | B1 |
| 6683426 | Kleeven | Jan 2004 | B1 |
| 6738141 | Thirstrup | May 2004 | B1 |
| 6795630 | Challener | Sep 2004 | B2 |
| 6999384 | Stancil | Feb 2006 | B2 |
| 7002228 | Deak | Feb 2006 | B2 |
| 7018729 | Pocker | Mar 2006 | B2 |
| 7032427 | Niwa | Apr 2006 | B2 |
| 7262936 | Hamann | Aug 2007 | B2 |
| 7272079 | Challener | Sep 2007 | B2 |
| 7330404 | Peng | Feb 2008 | B2 |
| 7377228 | Mack | May 2008 | B2 |
| 7419912 | Donofrio | Sep 2008 | B2 |
| 7476855 | Huang | Jan 2009 | B2 |
| 7538978 | Sato | May 2009 | B2 |
| 7544958 | Low | Jun 2009 | B2 |
| 7609003 | Horsky | Oct 2009 | B2 |
| 7690009 | Miyanishi | Mar 2010 | B2 |
| 7759609 | Asscher | Jul 2010 | B2 |
| 7791839 | Olson | Sep 2010 | B2 |
| 7961417 | Seigler | Jun 2011 | B2 |
| 7965464 | Batra | Jun 2011 | B2 |
| 7986592 | Hirano | Jul 2011 | B2 |
| 8023225 | Shimazawa | Sep 2011 | B2 |
| 8031561 | Hellwing | Oct 2011 | B2 |
| 8040761 | Kawamori | Oct 2011 | B2 |
| 8077556 | Komura | Dec 2011 | B2 |
| 8107325 | Komura | Jan 2012 | B2 |
| 8116034 | Komura | Feb 2012 | B2 |
| 8116176 | Kato | Feb 2012 | B2 |
| 8194510 | Sasaki | Jun 2012 | B2 |
| 8194511 | Sasaki | Jun 2012 | B2 |
| 8213272 | Takayama | Jul 2012 | B2 |
| 8223597 | Komura | Jul 2012 | B2 |
| 8248891 | Lee | Aug 2012 | B2 |
| 8284521 | Ohtsu | Oct 2012 | B2 |
| 8284635 | Matsumoto | Oct 2012 | B2 |
| 8289650 | Seigler | Oct 2012 | B2 |
| 8320220 | Yuan | Nov 2012 | B1 |
| 8325567 | Miyauchi | Dec 2012 | B2 |
| 8331205 | Seigler | Dec 2012 | B2 |
| 8339740 | Zou | Dec 2012 | B2 |
| 8351151 | Katine | Jan 2013 | B2 |
| 8385159 | Gao | Feb 2013 | B2 |
| 8400902 | Huang | Mar 2013 | B2 |
| 8405056 | Amaldi | Mar 2013 | B2 |
| 8405932 | Seigler | Mar 2013 | B2 |
| 8416647 | Zhao | Apr 2013 | B1 |
| 8427925 | Zhao | Apr 2013 | B2 |
| 8451555 | Seigler | May 2013 | B2 |
| 8451705 | Peng | May 2013 | B2 |
| 8477454 | Zou | Jul 2013 | B2 |
| 8514673 | Zhao | Aug 2013 | B1 |
| 8553505 | Rawat | Oct 2013 | B2 |
| 8670215 | Zou | Mar 2014 | B2 |
| 8675457 | Hirata | Mar 2014 | B1 |
| 8711662 | Lee | Apr 2014 | B2 |
| 8773959 | Gao | Jul 2014 | B2 |
| 8830800 | Pitcher | Sep 2014 | B1 |
| 8897105 | Zuckerman | Nov 2014 | B1 |
| 8917581 | Mallary | Dec 2014 | B1 |
| 8934198 | Zou | Jan 2015 | B2 |
| 8958168 | Yuan | Feb 2015 | B1 |
| 9058824 | Cheng | Jun 2015 | B2 |
| 9129626 | Kautzky | Sep 2015 | B2 |
| 9245573 | Sahoo | Jan 2016 | B2 |
| 9502070 | Cheng | Nov 2016 | B2 |
| 9570098 | Jayashankar | Feb 2017 | B2 |
| 9697856 | Jayaskankar | Jul 2017 | B2 |
| 9728208 | Sahoo | Aug 2017 | B2 |
| 9822444 | Zhao | Nov 2017 | B2 |
| 20050012052 | Platzgummer | Jan 2005 | A1 |
| 20050189329 | Talwar | Sep 2005 | A1 |
| 20050190496 | Hamann | Sep 2005 | A1 |
| 20060238133 | Horsky | Oct 2006 | A1 |
| 20070012950 | Cain | Jan 2007 | A1 |
| 20070019028 | Renn | Jan 2007 | A1 |
| 20070069383 | Suzuki | Mar 2007 | A1 |
| 20070207335 | Karandikar | Sep 2007 | A1 |
| 20080056080 | Milster | Mar 2008 | A1 |
| 20080230724 | Low | Sep 2008 | A1 |
| 20090073858 | Seigler | Mar 2009 | A1 |
| 20090130365 | Kojima | May 2009 | A1 |
| 20090225636 | Hirano | Sep 2009 | A1 |
| 20100103553 | Shimazawa | Apr 2010 | A1 |
| 20100123965 | Lee | May 2010 | A1 |
| 20100123967 | Batra | May 2010 | A1 |
| 20100128579 | Seigler | May 2010 | A1 |
| 20100149930 | Komura | Jun 2010 | A1 |
| 20100157746 | Hongo | Jun 2010 | A1 |
| 20100190036 | Komvopoulos | Jul 2010 | A1 |
| 20100214685 | Seigler | Aug 2010 | A1 |
| 20100309581 | Wu | Dec 2010 | A1 |
| 20100315736 | Takayama | Dec 2010 | A1 |
| 20100320403 | Amaldi | Dec 2010 | A1 |
| 20100329085 | Kawamori | Dec 2010 | A1 |
| 20110006214 | Bonig | Jan 2011 | A1 |
| 20110026161 | Ikeda | Feb 2011 | A1 |
| 20110038236 | Mizuno | Feb 2011 | A1 |
| 20110044857 | Lin | Feb 2011 | A1 |
| 20110058272 | Miyauchi | Mar 2011 | A1 |
| 20110096431 | Hellwig | Apr 2011 | A1 |
| 20110122735 | Kato | May 2011 | A1 |
| 20110205863 | Zhao | Aug 2011 | A1 |
| 20110286127 | Gao | Nov 2011 | A1 |
| 20120039155 | Peng | Feb 2012 | A1 |
| 20120045662 | Zou | Feb 2012 | A1 |
| 20120105996 | Katine | May 2012 | A1 |
| 20120127839 | Rawat | May 2012 | A1 |
| 20120138937 | Jo | Jun 2012 | A1 |
| 20120201491 | Zhou | Aug 2012 | A1 |
| 20120213042 | Aoki | Aug 2012 | A1 |
| 20130107679 | Huang | May 2013 | A1 |
| 20130108212 | Peng | May 2013 | A1 |
| 20130161505 | Pitcher | Jun 2013 | A1 |
| 20130164453 | Pitcher | Jun 2013 | A1 |
| 20130164454 | Pitcher | Jun 2013 | A1 |
| 20130176839 | Peng | Jul 2013 | A1 |
| 20130235707 | Zhao | Sep 2013 | A1 |
| 20130276877 | Dionne | Oct 2013 | A1 |
| 20130279035 | Peng | Oct 2013 | A1 |
| 20130279315 | Zhao | Oct 2013 | A1 |
| 20130286799 | Zhu | Oct 2013 | A1 |
| 20130286804 | Zhao | Oct 2013 | A1 |
| 20130288077 | Dhawan | Oct 2013 | A1 |
| 20140004384 | Zhao | Jan 2014 | A1 |
| 20140043948 | Hirata | Feb 2014 | A1 |
| 20140050057 | Zou | Feb 2014 | A1 |
| 20140050058 | Zou | Feb 2014 | A1 |
| 20140113160 | Pitcher | Apr 2014 | A1 |
| 20140177405 | Rejda | Jun 2014 | A1 |
| 20140254335 | Gage | Sep 2014 | A1 |
| 20140302255 | Spicer | Oct 2014 | A1 |
| 20140376346 | Sahoo | Dec 2014 | A1 |
| 20140376347 | Kim | Dec 2014 | A1 |
| 20140376349 | Cheng | Dec 2014 | A1 |
| 20140376350 | Cheng | Dec 2014 | A1 |
| 20140376351 | Cheng | Dec 2014 | A1 |
| 20140376352 | Cheng | Dec 2014 | A1 |
| 20150132503 | Kautzky | May 2015 | A1 |
| 20150162028 | Jayashankar | Jun 2015 | A1 |
| 20150179194 | Cheng | Jun 2015 | A1 |
| 20150340052 | Sankar | Nov 2015 | A1 |
| 20160133277 | Cheng | May 2016 | A1 |
| 20160133279 | Zhao | May 2016 | A1 |
| 20160275972 | Zhao | Sep 2016 | A1 |
| 20170263276 | Sankar | Sep 2017 | A1 |
| Number | Date | Country |
|---|---|---|
| 024088 | Oct 1987 | EP |
| 0 580 368 | Jan 1994 | EP |
| 0942072 | Sep 1999 | EP |
| 1328027 | Jul 2003 | EP |
| 2106678 | Oct 2009 | EP |
| 2011198450 | Oct 2011 | JP |
| 20111238991 | Dec 2011 | JP |
| 200929183 | Jul 2009 | TW |
| WO 9745834 | Dec 1997 | WO |
| WO 2013163195 | Oct 2013 | WO |
| WO 2013163470 | Oct 2013 | WO |
| Entry |
|---|
| Al-Bayati et al., Junction Profiles of Sub keV Ion Implantation for Deep Sub-Quarter Micron Devices, IEEE, 2000, pp. 87-90. |
| Angel et al., “Enhanced Low Energy Drift-Mode Beam Currents in a High Current Ion Implanter,” IEEE, 1999, pp. 219-222. |
| Bannuru et al., “The Electrical and Mechanical Properties of Au-V and Au-V205 Thin Films for Wear-Resistant RF MEMS Switches”, Journal of Applied Physics, 103, (2008), pp. 083522-1-083522-6. |
| Challener et al., “Heat-Assisted Magnetic Recording by a Near-Field Transducer with Efficient Optical Energy Transfer,” Journal of Applied Physics, Mar. 22, 2009. |
| Chen et al., “Drude Relaxation Rate in Grained Gold Nanoantennas,” Nano Letters, 2010, 10, 916-922. |
| Chen et al., “Enhanced Thermal Stability of Silica-Coated Gold Nanorods for Photoacoustic Imaging and Image-Guided Therapy,” Optics Express, Apr. 26, 2010, vol. 18, No. 9. |
| Druz et al., “Diamond-Like Carbon Films Deposited Using a Broad, Uniform Ion Beam from an RF Inductively Coupled CH4-Plasma Source”, Diamond and Related Materials, vol. 7, No. 7, Jul. 1998, pp. 965-972. |
| Feng et al., “Prediction of Size Effect on Thermal Conductivity of Nanoscale Metallic Films,” Thin Solid Films, 517 (2009), 2803-2807. |
| Greer et al., “Nanoscale Gold Pillars Strengthened Through Dislocation Starvation,” Physical Review, B 73, 245410 (2006). |
| Hau-Riege et al., “Simulation of Microstructural Evolution Induced by Scanned Laser Annealing of Metallic Interconnects,” Journal of Electronic Materials, vol. 30, No. 1, 2001. |
| Huang et al., “Universal and Non-Universal Aspects of Wet Granular Matter Under Vertical Vibrations,” Eur. Phys. J. Special Topics, 179, 25-32 (2009). |
| Huang, “Pulsed Laser Photothermal Annealing and Ablation of Plasmonic Nanoparticles”, European Physical Journal Special Topics, 2008, 153, 223-230. |
| Liu et al., “Influence of the Incident Angle of Energetic Carbon Ions on the Properties of Tetrahedral Amorphous Carbon (ta-C) films”, Journal of Vacuum Science and Technology, vol. 21, No. 5, Jul. 25, 2003, pp. 1665-1670. |
| Matsumura et al., “Advanced Excimer-Laser Annealing Process for Quasi Single-Crystal Silicon Thin-Film Devices,” Thin Solid Films, 337, (1999), 123-128. |
| Metallization: “Metallization”; chapter 5, In: Kris v. Srikrishnan and Geraldine C. Schwartz: “Handbook of Semiconductor Interconnection Technology, Second Edition”, 2006, CRC Press, Boca Raton, FL, USA, XP002711255, ISBN:978-1-4200-1765-6, pp. 311-382, Section 5.4.1.2 Adhesion; p. 320. |
| PCT International Search Report and Written Opinion for PCT/US2015/059671 dated Mar. 31, 2016 (12 pages). |
| PCT/US2013/038120 Search Report and Written Opinion dated Jul. 19, 2013 (8 pages). |
| Piazza et al., “Large Area Deposition of Hydrogenated Amorphous Carbon Films for Optical Storage Disks”, Diamond and Related Materials, vol. 13, No. 4-8, Apr. 2004, pp. 1505-1510. |
| Robertson, J., “Diamond-Like Amorphous Carbon,” Materials Science and Engineering R 37, 2002, pp. 129-281. |
| Rost et al., “Grains, Growth and Grooving”, Physical Review Letters, vol. 91, No. 2, Jul. 11, 2003. |
| Satoh et al., “Evaluation of Adhesion Materials for Gold Line-and-Space Surface Plasmon Antenna on SO1-MOS Photodiode”, Silicon Nanoelectronics Workshop (SNW), 2010, IEEE, Piscataway, NJ, USA, Jun. 13, 2010, pp. 1-2. |
| Vogt, K.W. et al., “Characterization of Thin Titanium Oxide Adhesion Layers on Gold Resistivity, Morphology, and Composition”, Surface Science, North-Holland, Amsterdam, NL, vol. 301, No. 1-3, Jan. 10, 1994, pp. 203-213. |
| Webster's Ninth New Collegiate Dictionary; Merriam-Webster incorporated, publishers: Springfield, Massachusetts, USA; excerpt pp. 867-868. |
| Weller et al., “A HAMR Media Technology Roadmap to an Areal Density of 4 Tb/in2”, IEEE Transactions on Magnetics, vol. 50, No. 1, Jan. 2014. |
| Williams, et al., “Strengthening Gold Films with Zirconia Nanoparticles for MEMS Electrical Contacts”, ScienceDirect, Acta Materialia 56, (2008), pp. 1813-1819. |
| Lerner, editor: Encyclopedia of Physics, second edition, excerpt by Chang et al., “Plasmons” on pp. 936-937, VCH Publishers, Inc., New York, 1991 (no month). |
| Number | Date | Country | |
|---|---|---|---|
| 20170365281 A1 | Dec 2017 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 14972288 | Dec 2015 | US |
| Child | 15670207 | US | |
| Parent | 14313504 | Jun 2014 | US |
| Child | 14972288 | US |
