Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides

Abstract

Methods to at least partially reduce a niobium oxide are described wherein the process includes heat treating the niobium oxide in the presence of a getter material and in an atmosphere which permits the transfer of oxygen atoms from the niobium oxide to the getter material, and for a sufficient time and at a sufficient temperature to form an oxygen reduced niobium oxide. Niobium oxides and/or suboxides are also described as well as capacitors containing anodes made from the niobium oxides and suboxides.

Description

BACKGROUND OF THE INVENTION

[0002] The present invention relates to niobium and oxides thereof and more particularly relates to niobium oxides and methods to at least partially reduce niobium oxide and further relates to oxygen reduced niobium.

SUMMARY OF THE PRESENT INVENTION

[0003] In accordance with the purposes of the present invention, as embodied and described herein, the present invention relates to a method to at least partially reduce a niobium oxide which includes the steps of heat treating the niobium oxide in the presence of a getter material and in an atmosphere which permits the transfer of oxygen atoms from the niobium oxide to the getter material for a sufficient time and temperature to form an oxygen reduced niobium oxide.

[0004] The present invention also relates to oxygen reduced niobium oxides which preferably have beneficial properties, especially when formed into an electrolytic capacitor anode. For instance, a capacitor made from the oxygen reduced niobium oxide of the present invention can have a capacitance of up to about 200,000 CV/g or more. Further, electrolytic capacitor anodes made from the oxygen reduced niobium oxides of the present invention can have a low DC leakage. For instance, such a capacitor can have a DC leakage of from about 0.5 nA/CV to about 5.0 nA/CV.

[0005] Accordingly, the present invention also relates to methods to increase capacitance and reduce DC leakage in capacitors made from niobium oxides, which involves partially reducing a niobium oxide by heat treating the niobium oxide in the presence of a getter material and in an atmosphere which permits the transfer of oxygen atoms from the niobium oxide to the getter material, for a sufficient time and temperature to form an oxygen reduced niobium oxide, which when formed into a capacitor anode, has reduced DC leakage and/or increased capacitance.

[0006] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are intended to provide further explanation of the present invention, as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0007] FIGS. 1-11 are SEMs of various oxygen reduced niobium oxides of the present invention at various magnifications.

[0008] FIG. 12 is a graph plotting DC leakage vs. Formation voltage for a niobium oxide capacitor anode and other anodes made from niobium or tantalum.

DETAILED DESCRIPTION OF THE PRESENT INVENTION

[0009] In an embodiment of the present invention, the present invention relates to methods to at least partially reduce a niobium oxide. In general, the method includes the steps of heat treating a starting niobium oxide in the presence of a getter material in an atmosphere which permits the transfer of oxygen atoms from the niobium oxide to the getter material for a sufficient time and at a sufficient temperature to form an oxygen reduced niobium oxide.

[0010] For purposes of the present invention, the niobium oxide can be at least one oxide of niobium metal and/or alloys thereof. A specific example of a starting niobium oxide is Nb2O5.

[0011] The niobium oxide used in the present invention can be in any shape or size. Preferably, the niobium oxide is in the form of a powder or a plurality of particles. Examples of the type of powder that can be used include, but are not limited to, flaked, angular, nodular, and mixtures or variations thereof. Preferably, the niobium oxide is in the form of a powder which more effectively leads to the oxygen reduced niobium oxide.

[0012] Examples of such preferred niobium oxide powders include those having mesh sizes of from about 60/100 to about 100/325 mesh and from about 60/100 to about 200/325 mesh. Another range of size is from −40 mesh to about −325 mesh.

[0013] The getter material for purposes of the present invention is any material capable of reducing the specific starting niobium oxide to the oxygen reduced niobium oxide. Preferably, the getter material comprises tantalum, niobium, or both. More preferably, the getter material is tantalum. The tantalum getter material for purposes of the present invention is any material containing tantalum metal which can remove or reduce at least partially the oxygen in the niobium oxide. Thus, the tantalum getter material can be an alloy or a material containing mixtures of tantalum metal with other ingredients. Preferably, the tantalum getter material is predominantly, if not exclusively, tantalum metal. The purity of the tantalum metal is not important but it is preferred that high purity tantalum metal comprise the getter material to avoid the introduction of other impurities during the heat treating process. Accordingly, the tantalum metal in the tantalum getter material preferably has a purity of at least about 98% and more preferably at least about 99%. Further, it is preferred that impurities such as oxygen are not present or are present in amounts below about 100 ppm.

[0014] The getter material can be in any shape or size. For instance, the getter material can be in the form of a tray which contains the niobium oxide to be reduced or can be in a particle or powder size. Preferably, the getter materials are in the form of a powder in order to have the most efficient surface area for reducing the niobium oxide. The getter material, thus, can be flaked, angular, nodular, and mixtures or variations thereof. Preferably, the getter material is a tantalum hydride material. A preferred form is coarse chips, e.g., 14/40 mesh chips that can be easily separated from the powder product by screening.

[0015] Similarly, the getter material can be niobium and the like and can have the same preferred parameters and/or properties discussed above for the tantalum getter material. Other getter materials can be used alone or in combination with the tantalum or niobium getter materials. Also, other materials can form a part of the getter material.

[0016] Generally, a sufficient amount of getter material is present to at least partially reduce the niobium oxide being heat treated. Further, the amount of the getter material is dependent upon the amount of reducing desired to the niobium oxide. For instance, if a slight reduction in the niobium oxide is desired, then the getter material will be present in a stoichemetric amount. Similarly, if the niobium oxide is to be reduced substantially with respect to its oxygen presence, then the getter material is present in a 2 to 5 times stoichemetric amount. Generally, the amount of getter material present (e.g., based on the tantalum getter material being 100% tantalum) can be present based on the following ratio of getter material to the amount of niobium oxide present of from about 2 to 1 to about 10 to 1.

[0017] Furthermore, the amount of getter material can also be dependent on the type of niobium oxide being reduced. For instance, when the niobium oxide being reduced is Nb2O5, the amount of getter material is preferably 5 to 1.

[0018] The heat treating that the starting niobium oxide is subjected to can be conducted in any heat treatment device or furnace commonly used in the heat treatment of metals, such as niobium and tantalum. The heat treatment of the niobium oxide in the presence of the getter material is at a sufficient temperature and for a sufficient time to form an oxygen reduced niobium oxide. The temperature and time of the heat treatment can be dependent on a variety of factors such as the amount of reduction of the niobium oxide, the amount of the getter material, and the type of getter material as well as the type of starting niobium oxide. Generally, the heat treatment of the niobium oxide will be at a temperature of from less than or about 800° C. to about 1900° C. and more preferably from about 1000° C. to about 1400° C., and most preferably from about 1200° C. to about 1250° C. In more detail, when the niobium oxide is a niobium containing oxide, the heat treatment temperatures will be from about 1000° C. to about 1300° C., and more preferably from about 1200° C. to about 1250° C. for a time of from about 5 minutes to about 100 minutes, and more preferably from about 30 minutes to about 60 minutes. Routine testing in view of the present application will permit one skilled in the art to readily control the times and temperatures of the heat treatment in order to obtain the proper or desired reduction of the niobium oxide.

[0019] The heat treatment occurs in an atmosphere which permits the transfer of oxygen atoms from the niobium oxide to the getter material. The heat treatment preferably occurs in a hydrogen containing atmosphere where is preferably just hydrogen. Other gases can also be present with the hydrogen, such as inert gases, so long as the other gases do not react with the hydrogen. Preferably, the hydrogen atmosphere is present during the heat treatment at a pressure of from about 10 Torr to about 2000 Torr, and more preferably from about 100 Torr to about 1000 Torr, and most preferably from about 100 Torr to about 930 Torr. Mixtures of H2 and an inert gas such as Ar can be used. Also, H2 in N2 can be used to effect control of the N2 level of the niobium oxide.

[0020] During the heat treatment process, a constant heat treatment temperature can be used during the entire heat treating process or variations in temperature or temperature steps can be used. For instance, hydrogen can be initially admitted at 1000° C. followed by increasing the temperature to 1250° C. for 30 minutes followed by reducing the temperature to 1000° C. and held there until removal of the H2 gas. After the H2 or other atmosphere is removed, the furnace temperature can be dropped. Variations of these steps can be used to suit any preferences of the industry.

[0021] The oxygen reduced niobium oxides can also contain levels of nitrogen, e.g., from about 100 ppm to about 80,000 ppm N2 or to about 130,000 ppm N2. Suitable ranges includes from about 31,000 ppm N2 to about 130,000 ppm N2 and from about 50,000 ppm N2 to about 80,000 N2.

[0022] The oxygen reduced niobium oxide is any niobium oxide which has a lower oxygen content in the metal oxide compared to the starting niobium oxide. Typical reduced niobium oxides comprise NbO, NbO0.7, NbO11, NbO2, and any combination thereof with or without other oxides present. Generally, the reduced niobium oxide of the present invention has an atomic ratio of niobium to oxygen of about 1:less than 2.5, and preferably 1:2 and more preferably 1:1.1, 1:1, or 1:0.7. Put another way, the reduced niobium oxide preferably has the formula NbxOy, wherein Nb is niobium, x is 2 or less, and y is less than 2.5x. More preferably x is 1 and y is less than 2, such as 1.1, 1.0, 0.7, and the like.

[0023] The starting niobium oxides can be prepared by calcining at 1000° C. until removal of any volatile components. The oxides can be sized by screening. Preheat treatment of the niobium oxides can be used to create controlled porosity in the oxide particles.

[0024] The reduced niobium oxides of the present invention also preferably have a microporous surface and preferably have a sponge-like structure, wherein the primary particles are preferably 1 micron or less. The SEMs further depict the type of preferred reduced niobium oxide of the present invention. As can be seen in these microphotographs, the reduced niobium oxides of the present invention can have high specific surface area, and a porous structure with approximately 50% porosity. Further, the reduced niobium oxides of the present invention can be characterized as having a preferred specific surface area of from about 0.5 to about 10.0 m2/g, more preferably from about 0.5 to 2.0 m2/g, and even more preferably from about 1.0 to about 1.5 m2/g. The preferred apparent density of the powder of the niobium oxides is less than about 2.0 g/cc, more preferably, less than 1.5 g/cc and more preferably, from about 0.5 to about 1.5 g/cc.

[0025] The various oxygen reduced niobium oxides of the present invention can be further characterized by the electrical properties resulting from the formation of a capacitor anode using the oxygen reduced niobium oxides of the present invention. In general, the oxygen reduced niobium oxides of the present invention can be tested for electrical properties by pressing powders of the oxygen reduced niobium oxide into an anode and sintering the pressed powder at appropriate temperatures and then anodizing the anode to produce an electrolytic capacitor anode which can then be subsequently tested for electrical properties.

[0026] Accordingly, another embodiment of the present invention relates to anodes for capacitors formed from the oxygen reduced niobium oxides of the present invention. Anodes can be made from the powdered form of the reduced oxides in a similar process as used for fabricating metal anodes, i.e., pressing porous pellets with embedded lead wires or other connectors followed by optional sintering and anodizing. The lead connector can be embedded or attached at any time before anodizing. Anodes made from some of the oxygen reduced niobium oxides of the present invention can have a capacitance of from about 1,000 CV/g or lower to about 300,000 CV/g or more, and other ranges of capacitance can be from about 20,000 CV/g to about 300,000 CV/g or from about 62,000 CV/g to about 200,000 CV/g and preferably from about 60,000 to 150,000 CV/g. In forming the capacitor anodes of the present invention, a sintering temperature can be used which will permit the formation of a capacitor anode having the desired properties. The sintering temperature will be based on the oxygen reduced niobium oxide used. Preferably, the sintering temperature is from about 1200° C. to about 1750° C. and more preferably from about 1200° C. to about 1400° C. and most preferably from about 1250° C. to about 1350° C. when the oxygen reduced niobium oxide is an oxygen reduced niobium oxide.

[0027] The anodes formed from the niobium oxides of the present invention are preferably formed at a voltage of about 35 volts and preferably from about 6 to about 70 volts. When an oxygen reduced niobium oxide is used, preferably, the forming voltages are from about 6 to about 50 volts, and more preferably from about 10 to about 40 volts. Other high formation voltages can be used such as from about 70 volts to about 130 volts. The DC leakage achieved by the niobium oxides of the present invention have provided excellent low leakage at high formation voltages. This low leakage is significantly better than capacitors formed with Nb powder as can be seen in, for instance, FIG. 12. Anodes of the reduced niobium oxides can be prepared by fabricating a pellet of Nb2O5 with a lead wire followed by sintering in H2 atmosphere or other suitable atmosphere in the proximity of a getter material just as with powdered oxides. In this embodiment, the anode article produced can be produced directly, e.g., forming the oxygen reduced valve metal oxide and an anode at the same time. Also, the anodes formed from the oxygen reduced niobium oxides of the present invention preferably have a DC leakage of less than about 5.0 nA/CV. In an embodiment of the present invention, the anodes formed from some of the oxygen reduced niobium oxides of the present invention have a DC leakage of from about 5.0 nA/CV to about 0.50 nA/CV.

[0028] The present invention also relates to a capacitor in accordance with the present invention having a niobium oxide film on the surface of the capacitor. Preferably, the film is a niobium pentoxide film. The means of making metal powder into capacitor anodes is known to those skilled in the art and such methods such as those set forth in U.S. Pat. Nos. 4,805,074, 5,412,533, 5,211,741, and 5,245,514, and European Application Nos. 0 634 762 A1 and 0 634 761 A1, all of which are incorporated in their entirety herein by reference.

[0029] The capacitors of the present invention can be used in a variety of end uses such as automotive electronics, cellular phones, computers, such as monitors, mother boards, and the like, consumer electronics including TVs and CRTs, printers/copiers, power supplies, modems, computer notebooks, disc drives, and the like.

[0030] The present invention will be further clarified by the following examples, which are intended to be exemplary of the present invention.

Test Methods

[0031] Anode Fabrication:

[0032] size−0.197″ dia

[0033] 3.5 Dp

[0034] powder wt=341 mg

[0035] Anode Sintering:

[0036] 1300° C. 10′

[0037] 1450° C. 10′

[0038] 1600° C. 10′

[0039] 1750° C. 10′

[0040] 30V Ef Anodization:

[0041] 30V Ef @ 60° C./0.1% H3PO4 Electrolyte

[0042] 20 mA/g constant current

[0043] DC Leakage/Capacitance—ESR Tesing:

[0044] DC Leakage Testing ---

[0045] 70% Ef (21 VDC) Test Voltage

[0046] 60 second charge time

[0047] 10% H3PO4 @ 21° C.

[0048] Capacitance—DF Testing:

[0049] 18% H2SO4 @ 21° C.

[0050] 120 Hz

[0051] 50V ET Reform Anodization:

[0052] 50V Ef @ 60° C./0.1% H3PO4 Electrolyte

[0053] 20 mA/g constant current

[0054] DC Leakage/Capacitance—ESR Testing:

[0055] DC leakage Testing ---

[0056] 70% Ef (35 VDC) Test Voltage

[0057] 60 second charge time

[0058] 10% H3PO4 @ 21° C.

[0059] Capacitance—DF Testing:

[0060] 18% H2SO4 @ 21° C.

[0061] 120 Hz

[0062] 75V Ef Reform Anodization:

[0063] 75V Ef @ 60° C./0.1% H3PO4 Electrolyte

[0064] 20 mA/g constant current

[0065] DC Leakgge/Capacitance—FSR Testing:

[0066] DC leakage Testing ---

[0067] 70% Ef (52.5 VDC) Test Voltage

[0068] 60 second charge time

[0069] 10% H3PO4 @ 21° C.

[0070] Capacitance—DF Testing:

[0071] 18% H2SO4 @ 21° C.

[0072] 120 Hz

[0073] Scott Density, oxygen analysis, phosphorus analysis, and BET analysis were determined according to the procedures set forth in U.S. Pat. Nos. 5,011,742; 4,960,471; and 4,964,906, all incorporated hereby in their entireties by reference herein.

EXAMPLES

Example 1

[0074] +10 mesh Ta hydride chips (99.2 gms) with approximately 50 ppm oxygen were mixed with 22 grams of Nb2O5 and placed into Ta trays. The trays were placed into a vacuum heat treatment furnace and heated to 1000° C. H2 gas was admitted to the furnace to a pressure of +3 psi. The temperature was further ramped to 1240° C. and held for 30 minutes. The temperature was lowered to 1050° C. for 6 minutes until all H2 was swept from the furnace. While still holding 1050° C., the argon gas was evacuated from the furnace until a pressure of 5×10−4 torr was achieved. At this point 700 mm of argon was readmitted to the chamber and the furnace cooled to 60° C.

[0075] The material was passivated with several cyclic exposures to progressively higher partial pressures of oxygen prior to removal from the furnace as follows: The furnace was backfilled with argon to 700 mm followed by filling to one atmosphere with air. After 4 minutes the chamber was evacuated to 10−2 torr. The chamber was then backfilled to 600 mm with argon followed by air to one atmosphere and held for 4 minutes. The chamber was evacuated to 10−2 torr. The chamber was then backfilled to 400 mm argon followed by air to one atmosphere. After 4 minutes the chamber was evacuated to 10−2 tort. The chamber was them backfilled to 200 mm argon followed by air to one atmosphere and held for 4 minutes. The chamber was evacuated to 10−2 torr. The chamber was backfilled to one atmosphere with air and held for 4 minutes. The chamber was evacuated to 10−2 torr. The chamber was backfilled to one atmosphere with argon and opened to remove the sample.

[0076] The powder product was separated from the tantalum chip getter by screening through a 40 mesh screen. The product was tested with the following results.

[0077] CV/g of pellets sintered to 1300° C.×10 minutes and formed to 35

[0078] volts=81,297

[0079] nA/CV (DC leakage)=5.0

[0080] Sintered Density of pellets=2.7 g/cc

[0081] Scott density=0.9 g/cc

[0082] Chemical Analysis (ppm)

C = 70
H2 = 56
Ti = 25 Fe = 25
Mn = 10 Si = 25
Sn = 5  Ni = 5
Cr = 10 Al = 5
Mo = 25 Mg = 5
Cu = 50 B = 2
Pb = 2  all others < limits

Example 2

[0083] Samples 1 through 20 are examples following similar steps as above with powdered Nb2O5 as indicated in the Table. For most of the examples, mesh sizes of the starting input material are set 20 forth in the Table, for example 60/100, means smaller than 60 mesh, but larger than 100 mesh. Similarly, the screen size of some of the Ta getter is given as 14/40. The getters marked as “Ta hydride chip” are +40 mesh with no upper limit on particle size.

[0084] Sample 18 used Nb as the getter material (commercially available N200 flaked Nb powder from CPM). The getter material for sample 18 was fine grained Nb powder which was not separated from the final product. X-ray diffraction showed that some of the getter material remained as Nb, but most was converted to Nb1.1 and NbO by the process as was the starting niobium oxide material Nb2O5.

[0085] Sample 15 was a pellet of Nb2O5, pressed to near solid density, and reacted with H2 in close proximity to the Ta getter material. The process converted the solid oxide pellet into a porous slug of NbO suboxide. This slug was sintered to a sheet of Nb metal to create an anode lead connection and anodized to 35 volts using similar electrical forming procedures as used for the powder slug pellets. This sample demonstrates the unique ability of this process to make a ready to anodize slug in a single step from Nb2O5 starting material.

[0086] The Table shows the high capacitance and low DC leakage capable of anodes made from the pressed and sintered powders/pellets of the present invention. Microphotographs (SEMs) of various samples were taken. These photographs show the porous structure of the reduced oxygen niobium oxide of the present invention. In particular, FIG. 1 is a photograph of the outer surface of a pellet taken at 5,000× (sample 15). FIG. 2 is a photograph of the pellet interior of the same pellet taken at 5,000×. FIGS. 3 and 4 are photographs of the outer surface of the same pellet at 1,000×. FIG. 5 is a photograph of sample 11 at 2,000× and FIGS. 6 and 7 are photographs taken of sample 4 at 5,000×. FIG. 8 is a photograph taken of sample 3 at 2,000× and FIG. 9 is a photograph of sample 6 at 2,000×. Finally, FIG. 10 is a photograph of sample 6, taken at 3,000× and FIG. 11 is a photograph of sample 9 taken at 2,000×.

								XRD*	XRD*	XRD*	XRD*
Sam-					Temp	Time	Hydrogen	Major	Major	Minor	Minor	1300X35v	1300X35v
ple	Input Material	Gms	Input Getter	Gms	(° C.)	(min)	Pressure	1**	2**	1***	2***	CV/g	na/CV
1	40	mesh	20 (est)	Ta hydride chips	40 (est)	1240	30	3 psi					81297	5
	calcined Nb2O5
2	60/100 Nb2O5	23.4	Ta hydride chips	65.4	1250	30	3 psi	NbO1 1	NbO	TaO		115379	1.28
3	60/100 Nb2O5	23.4	Ta hydride chips	65.4	1250	30	3 psi	NbO1 1	NbO	TaO		121293	2.19
4	100/325 Nb2O5	32.3	Ta hydride chips	92.8	1250	30	3 psi					113067	1.02
5	100/325 Nb2O5	32.3	Ta hydride chips	92.8	1250	30	3 psi					145589	1.42
6	60/100 Nb2O5	26.124	Ta hydride chips	72.349	1250	90	3 psi					17793	12.86
7	60/100 Nb2O5	26.124	Ta hydride chips	72.349	1250	90	3 psi					41525	5.63
8	200/325 Nb2O5	29.496	Ta hydride chips	83.415	1250	90	3 psi					17790	16.77
9	60/100 Nb2O5	20.888	Ta hydride chips	60.767	1200	90	3 psi	NbO1 1	NbO	Ta2O5		63257	5.17
10	60/100 Nb2O5	20.888	Ta hydride chips	60.767	1200	90	3 psi	NbO1 1	NbO	Ta2O5		69881	5.5
11	200/325 Nb2O5	23.936	Ta hydride chips	69.266	1200	90	3 psi	NbO1 1	NbO	Ta2O5		61716	6.65
12	200/325 Nb2O5	23.936	Ta hydride chips	69.266	1200	90	3 psi	NbO1 1	NbO	Ta2O5		68245	6.84
13	200/325 Nb2O5	15.5	14/40 Ta hydride	41.56	1250	30	3 psi	NbO0 7	NbO	TaO	NbO2	76294	4.03
14	200/325 Nb2O5	10.25	14/40 Ta hydride	68.96	1250	30	3 psi	NbO0 7	NbO	TaO	NbO2	29281	21.03
15	Nb2O5 pellets	3.49	14/40 Ta hydride	25.7	1250	30	3 psi					70840	0.97
16	200/325 Nb2O5	13.2	14/40 Ta hydride	85.7	1200	30	3 psi	NbO2	NbO0 7	TaO	NbO	5520	34.33
17	200/325 Nb2O5	14.94	14/40 Ta hydride	41.37	1200	30	3 psi					6719	38.44
18	200/325 Nb2O5	11.92	N200 Nb powder	21.07	1200	30	3 psi	Nb	NbO1 1	NbO		25716	4.71
19	200/325 Nb2O5	10	14/40 Ta hydride	69	1250	30	100 Torr					108478	1.95
20	200/325 Nb2O5	16	14/40 Ta hydride	41	1250	30	100 Torr					106046	1.66
*X-Ray Defraction Analysis Results
**Major 1 and 2 refer to primary components present by weight.
***Minor 1 and 2 refer to secondary components present by weight.
Samples 11 and 12 had the same input material - Samples 2 and 3 had the same input material. Samples 6 and 7 had the same input material. Samples 9 and 10 had the same input material.

[0087] Example 3

[0088] This experiment was conducted to show the ability of the niobium oxides of the present invention to form at high formation voltages and yet retain an acceptable DC leakage. The niobium oxide of the present invention was compared to a capacitor formed from commercially available tantalum and niobium metal. In particular, Table 2 sets forth the basic characteristics of the materials that were used to form the capacitor for this example. The C606 tantalum is a commercially available product from Cabot Corporation. The niobium oxide used in Example 3 was prepared in manner similar to Example 1. Table 3 further set forth the chemical compositions of components other than the niobium metal for the niobium oxide of the present invention and the niobium metal which was used for comparison purposes. Tables 4-7 set forth the data obtained for each formation voltage starting at 15 volts and ending at 75 volts. The data is also plotted in FIG. 12. The particular capacitor anodes which were tested for DC leakage were formed using the stated formation voltage and in each case the sintering temperature was 1300° C. for 10 minutes and the formation temperature of the anode was 60° C. with the press density set forth in Table 2. Further, the anodes were formed in 0.1% H3PO4 electrolyte, with a 135 milliamps/g constant current up to the desired formation voltage which was held for 3 hours. The test conditions were the same as for the DC leakage tested in Example 1 (except as noted herein) including 10% H3PO4 at 21° C. The anode size of the Nb suboxide was 0.17 inch diameter. The anode size of the tantalum was 0.13 inch diameter and the anode size for the niobium was 0.19 inch diameter. The anode weight was as follows: niobium suboxide=200 mg; tantalum=200 mg; niobium=340 mg.

	TABLE 2
	Nb Sub-Oxide	Nb	Ta C606 (Commercial product)
BET, m2/g	0.75	0.58	Commercial spec
Scott density, g/in2	20.7	23.8	Commercial spec
Anode sintering	3.0	4.1	5.3
density, g/cc
CV/g	56,562	22,898	61,002
Sintering conditions	10 min @ 1300° C.	10 min @ 1300° C.	10 min @ 1300° C.
Formation temperature	60° C.	60° C.	60° C.

[0089]

	TABLE 3
	Element	Nb Oxide	Nb
	C	150	422
	O	141,400	2399
	H		55
	Si	30	250
	Ni	10	20
	Fe	200	100
	Cr	40	50
	Ti	<5	<5
	Mn	25	25
	Sn	<5	<5
	Ca	<50	<50
	Al	50	20
	W	<100	<100
	Zr	<5	<5
	Mg	25	10
	B	<5	10
	Co	<5	<5
	Cu	<5	10

[0090] As can be seen in FIG. 12 and Tables 4-7, while the DC leakage for capacitor anodes made from niobium metal increased dramatically at a formation voltage of 75 volts, the DC leakage for the capacitor anode formed from a niobium oxide of the present invention remain relatively stable. This is quite impressive considering the effect seen with respect to a capacitor anode formed from niobium metal. Thus, unlike niobium metal, the niobium oxides of the present invention have the ability to be formed into capacitor anodes and formed at high voltages while maintaining acceptable DC leakage which was not possible with anodes made simply from niobium metal. Thus, the niobium oxides of the present invention can be possible substitutes for anodes made from tantalum in certain applications which is quite beneficial considering niobium can be less expensive.

	TABLE 4
	Nb Sub-Oxide	Ta	Ta	Nb
Anodization Voltage	15.0	15.0	15.0	15.0
(CV)	11,037	13,095	12,635	7,893
(CV/g)	56562	63,154	61,002	22,898
(CV/g) (Corr)
(CV/cc)	168,304	352,254	324,448	93,372
(Ohms)	0.82	0.92	0.90	0.89
Charge time one (sec)	30	30	30	30
(uA)	72.86	10.94	12.74	13.14
*“FLIERS”	0	0	0	0
“GASSERS”	0	0	0	0
N =	8	8	8	2
(uA/g)	373.37	52.75	61.51	38.12
(nA/CV)	6.60	0.84	1.01	1.66
Charge time two (sec)	60	60	60	60
(uA)	60.08	7.39	9.00	9.42
“FLIERS”	0	0	0	0
“GASSERS”	0	0	0	0
N =	8	8	8	2
(uA/g)	307.90	35.63	43.45	27.31
(nA/CV)	5.44	0.56	0.71	1.19
Dia. Shkg(%)	0.6	0.6	−1.2	4.0
Ds(g/cc)	3.0	5.6	5.3	4.1

[0091]

	TABLE 5
	Nb Sub-Oxide	Ta	Ta	Nb
Anodization Voltage	35.0	35.0	35.0	35.0
(CV)	10,445	12,678	12,130	7,977
(CV/g)	53,107	60,470	58,448	23,457
(CV/g) (Corr)
(CV/cc)	158,416	341,045	311,482	93,700
(Ohms)	0.92	1.04	1.02	0.95
Charge time one (sec)	30	30	30	30
(uA)	54.13	11.50	29.60	53.31
*“FLIERS”	0	1	0	0
“GASSERS”	0	0	0	0
N =	8	8	8	2
(uA/g)	275.23	54.86	142.64	156.77
(nA/CV)	5.18	0.91	2.44	6.68
Charge time two (sec)	60	60	60	60
(uA)	47.21	7.56	20.99	31.17
“FLIERS”	0	1	0	0
“GASSERS”	0	0	0	0
N =	8	8	8	2
(uA/g)	240.04	36.08	101.14	91.66
(nA/CV)	4.52	0.60	1.73	3.91
Dia. Shkg(%)	0.6	0.6	−1.2	3.8
Ds(g/cc)	3.0	5.6	5.3	4.0

[0092]

	TABLE 6
	Nb Sub-Oxide	Ta	Ta	Nb
Anodization Voltage	55.0	55.0	55.0	55.0
(CV)	9,476	11,448	10,878	7,894
(CV/g)	47,159	54,928	52,394	22,941
(CV/g) (Corr)
(CV/cc)	134,774	307,960	279,339	92,880
(Ohms)	1.35	1.21	1.18	1.08
Charge time one (sec)	30	30	30	30
(uA)	53.70	13.48	28.40	61.61
*“FLIERS”	0	0	0	0
“GASSERS”	0	0	0	0
N =	8	8	8	2
(uA/g)	267.23	64.65	136.80	179.05
(nA/CV)	5.67	1.18	2.61	7.80
Charge time two (sec)	60	60	60	60
(uA)	46.28	8.91	20.24	36.29
“FLIERS”	0	0	0	0
“GASSERS”	0	0	0	0
N =	8	8	8	2
(uA/g)	230.34	42.77	97.50	105.45
(nA/CV)	4.88	0.78	1.86	4.60
Dia. Shkg(%)	0.3	0.6	−1.2	3.8
Ds(g/cc)	2.9	5.6	5.3	4.0

[0093]

	TABLE 7
	Nb Sub-Oxide	Ta	Ta	Nb
Anodization Voltage	75.0	75.0	75.0	75.0
(CV)	5,420	10,133	9,517	7,872
(CV/g)	27,508	48,484	45,749	22,886
(CV/g) (Corr)
(CV/cc)	80,768	274,194	246,127	93,954
(Ohms)	4.58	1.37	1.31	1.31
Charge time one (sec)	30	30	30	30
(uA)	67.08	16.76	27.47	640.50
*“FLIERS”	0	0	0	0
“GASSERS”	0	0	0	0
N =	8	8	8	2
(uA/g)	340.40	80.17	132.04	1862.19
(nA/CV)	12.37	1.65	2.89	81.37
Charge time two (sec)	60	60	60	60
(uA)	55.91	10.97	19.90	412.20
“FLIERS”	0	0	0	0
“GASSERS”	0	0	0	0
N =	8	8	8	2
(uA/g)	283.75	52.48	95.67	1198.43
(nA/CV)	10.32	1.08	20.9	52.37
Dia. Shkg(%)	0.1	0.9	−0.9	4.3
Ds(g/cc)	2.9	5.7	5.4	4.14

[0094] Other embodiments of the present invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.

Claims

1. A capacitor anode comprising a niobium oxide having an atomic ratio of niobium to oxygen of 1:less than 2.5 and being formed at a formation voltage of about 6 volts or higher.

2. The capacitor anode of claim 1, wherein said capacitor anode is formed at a formation voltage of from about 6 to about 130 volts.

3. The capacitor anode of claim 1, wherein said capacitor anode is formed at a formation voltage of from about 75 volts to about 130 volts.

4. The capacitor anode of claim 1, wherein said capacitor anode is formed at a formation voltage of from about 75 volts to about 100 volts.

5. The capacitor anode of claim 1, wherein said DC leakage is less than 15 nA/CV, wherein said DC leakage is determined at a sintering temperature of 1300° C. for 10 minutes and a formation temperature of 60° C.

6. The capacitor anode of claim 5, wherein said DC leakage is less than about 12 nA/CV.

7. The capacitor anode of claim 3, wherein said DC leakage is less than 15 nA/CV.

8. A niobium oxide having an atomic ratio of niobium to oxygen of 1:less than 2.5, and having a nitrogen content of from about 31,000 ppm N2 to about 130,000 ppm N2.

9. The niobium oxide of claim 8, wherein the atomic ratio is 1:less than 2.0.

10. The niobium oxide of claim 8, wherein the atomic ratio is 1:less than 1.5.

11. The niobium oxide of claim 8, wherein the atomic ratio is 1:1.1.

12. The niobium oxide of claim 8, wherein the atomic ratio is 1:0.7.

13. The niobium oxide of claim 8, wherein the atomic ratio is 1:0.5.

14. The niobium oxide of claim 8, wherein said niobium oxide has a porous structure.

15. The niobium oxide of claim 8, wherein said niobium oxide has a porous structure having from about 0.1 to about 10 micrometer pores.

16. The niobium oxide of claim 8, wherein said niobium oxide comprises NbO, NbO0.7, NbO1.1, or combinations thereof.

17. The niobium oxide of claim 8, wherein said niobium oxide is formed into an electrolytic capacitor anode having a capacitance of up to about 300,000 CV/g.

18. The niobium oxide of claim 8, wherein said nitrogen amount is from about 31,000 ppm N2 to about 80,000 ppm N2.

19. The niobium oxide of claim 8, wherein said nitrogen is present in the amount of from about 50,000 ppm to about 70,000 ppm N2.

20. The niobium oxide of claim 8, wherein said niobium oxide is formed into an electrolytic capacitor anode, said anode having a capacitance of from about 1,000 to about 300,000 CV/g.

21. The niobium oxide of claim 20, wherein said capacitance is from about 60,000 to about 200,000 CV/g.

22. The niobium oxide of claim 8, wherein said anode has a DC leakage of from about 0.5 to about 5 nA/CV.

23. The niobium oxide of claim 8, wherein said niobium comprises nodular, flaked, angular, or combinations thereof.

24. A capacitor comprising the niobium oxide of claim 8.

25. A capacitor comprising the niobium oxide of claim 19.

26. The niobium oxide of claim 20, wherein said niobium oxide is sintered at a temperature of from about 1200° C. to about 1750° C.

27. The niobium oxide of claim 26, wherein said niobium oxide is sintered at a temperature of from about 1200° C. to about 1450° C.

28. The capacitor of claim 24, having a capacitance of from about 1,000 CV/g to about 300,000 CV/g.

29. The capacitor of claim 24, having a capacitance of from about 60,000 CV/g to about 200,000 CV/g.

30. The capacitor of claim 28, having a DC leakage of from about 0.5 to about 5 nA/CV.

31. The capacitor of claim 29, having a DC leakage of from about 0.5 to about 5 nA/CV.