Further objects, features and advantages of the invention will become apparent from the following detailed description taken in conjunction with the accompanying figures showing illustrative embodiments of the invention, in which:
a is a SEM micrograph of a stencil mask (a fine masking means) formed in the process described above;
b is a SEM micrograph of a stencil mask (a fine masking means) formed in the process described above;
c is a SEM micrograph of a stencil mask (a fine masking means) formed in the process described above;
d is a SEM micrograph of a stencil mask (a fine masking means) formed in the process described above;
a is a SEM micrograph of a line-shaped stencil mask;
b is a SEM micrograph of a line-shaped stencil mask;
c is a SEM micrograph of a line-shaped stencil mask;
d is a SEM micrograph of a line-shaped stencil mask;
a is a SEM micrograph of an example of deposit by the ESD, which is formed by using a fine stencil mask formed in the method above:
b is a SEM micrograph of an example of deposit by the ESD, which is formed by using a fine stencil mask formed in the method above;
Number | Date | Country | Kind |
---|---|---|---|
2006-53497 | Feb 2006 | JP | national |