The present invention discloses an effective technique to provide overload and electrostatic discharge (ESD) protection to microwave/millimeter wave monolithic integrated circuits (MMICs) including low noise amplifiers (LNAs) using a microelectromechanical (MEM) device.
In the construction of MMICs, power regulation and, more specifically, power limiting and ESD protection are desirable to prevent device bum-out from high incident RF power.
PIN diodes are typically used as power limiters, but these diodes are lossy (˜1.0 dB) at millimeter wave frequencies. Not only does the loss due to an input power limiter reduce the input signal level and thus the required amplification to reach a specified output level, but also reduces the signal-to-noise ratio by increasing the system's noise figure. Any loss due to a power limiter adds directly to the noise figure of the amplifier. Furthermore, diodes are difficult to use, as they require impedance matching with the circuitry to which they are connected, tending to reduce the available bandwidth. PIN diodes are also not generally available in low-noise, high electron mobility transistor (HEMT) processes and thus cannot be integrated onto the same substrate as the rest of the MMIC.
Semiconductor devices are sensitive to excessive input voltages, such as those generated by ESD. High-speed devices are particularly sensitive. MMIC systems that encounter ESD typically suffer from either immediate or latent component failure. In low frequency applications, the most common technique for protecting input, output, and power pins from damage is to include ESD diodes to shunt the undesired input signal away from the active devices and a series resistor to allow for sufficient time for the diodes to turn on. However, ESD diodes tend to have a large capacitance at high frequencies, which limits their use in radio to millimeter frequency applications. Additionally, a series resistor is not acceptable in a MIMIC system due to the incurred loss which, in order to compensate, would require greater input power. The result of these shortcomings in diodes and resistors leave the typical high-speed devices that operate at RF frequencies and above unprotected.
The present invention overcomes many of the difficulties involved in the use of diodes as power limiters and the use of diodes as ESD protection devices. These devices utilize the strong electromagnetic field associated with the high power signal or an ESD event to short out harmful signals and to protect the remainder of the MMIC system. These devices are each considered in two preferred aspects; a flexible bridge cantilever anchored at both ends supporting an electrical contact over a transmission line and as a cantilever anchored at one end with at least one contact at or near the opposite end.
The present invention is directed to a microelectromechanical RF and microwave frequency power regulator that may be tailored to a variety of applications including uses such as power limiting and electrostatic discharge protection for semiconductor devices. The power regulator includes a substrate on which at least one electrically conductive ground contact and a substantially planar transmission line are formed. A substantially elongated, electrically conductive strip is connected to the at least one ground contact and is positioned so that a portion of the substantially elongated strip is adjacent to the transmission line and so that a gap is formed therebetween. The electrically conductive strip may be formed in shapes such as a bridge or a cantilever arm, or may take other forms, as suitable to a particular application. In operation, when an undesirable signal is present on the transmission line, the resultant force created causes the conductive strip to flex toward, and physically contact the transmission line. Thus, the undesirable signal is diverted away from the circuit being protected by passing the signal through the conductive strip to ground.
This invention has been reduced to practice in the form of a power limiter and as an electrostatic device protection unit, and has various other applications that will be evident to those skilled in the art.
The power regulator of the present invention is useful to regulate power in microwave and millimeter wave circuits, and may be tailored to a variety of applications. The proposed power regulator has been reduced to practice in the context of two specific applications, a power limiter and an electrostatic discharge (ESD) protection unit. In both applications, the device has been utilized in both a flexible cantilever and as a bridge, as described in greater detail in the paragraphs that follow. This description will first detail the cantilever and bridge as examples of aspects of the present invention and will then proceed to detail specific applications of the present invention. These examples of aspects are presented for illustration of this invention, and are not to be considered limitations to its scope.
The present invention relates to power regulators such as power limiters and ESD protection units, as well as to apparatus incorporating them therein. The following description is presented to enable one of ordinary skill in the art to make and use the invention and to incorporate it in the context of particular applications. Various modifications to the preferred aspect, as well as a variety of uses in different applications will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects. Thus, the present invention is not intended to be limited to the aspects shown, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
A top view of a bridge aspect of the device of the present invention is shown in FIG. 1. This aspect includes a substrate 9 with ground contacts 1 and 3 formed thereon. An example of a typical substrate material is semi-insulating GaAs with Au as a contact metal, although other material families may be appropriate depending on the particular application. The ground contacts 1 and 3 are electrically connected, through via holes 5 and 7, respectively, to a metallization layer 15 (see
Although
A top view of a cantilever arm aspect of the present invention is presented in FIG. 4. This aspect includes a cantilever arm 17 constructed as a rectangular lever made of an electrically neutral material such as silicon nitride, with an anchor end 19, a contact end 21, and an actuation portion 23. The contact end 21 faces and directly opposes the transmission line 25 that is embedded in the substrate 27 (see
As demonstrated in
This application is a divisional application claiming priority to U.S. patent application Ser. No. 09/431,308, filed Oct. 30, 1999 now U.S. Pat. No. 6,504,447, issued on Jan. 7, 2003, and titled “Microelectromechanical RF and Microwave Frequency Power Regulator.”
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Number | Date | Country | |
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20030222728 A1 | Dec 2003 | US |
Number | Date | Country | |
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Parent | 09431308 | Oct 1999 | US |
Child | 10337967 | US |