Claims
- 1. A microfabricated ultrasonic transducer including:
- a conductive substrate;
- a plurality of silicon nitride membranes having one or more holes;
- an insulating support supporting, each of said membranes above said substrate; and
- a silicon nitride layer formed by chemical vapor deposition on said membranes extending partially into and sealing said openings to form a sealed cavity defined by said substrate, insulating support and sealed membrane; and
- a conductive film on the outer surface of the silicon nitride membrane.
- 2. A microfabricated ultrasonic transducer as in claim 1 in which the sealed cavity is evacuated.
- 3. A microfabricated transducer as in claim 2 in which said holes have a diameter of less than 0.3 microns.
- 4. A microfabricated transducer as in claims 1, 2, or 3 in which said insulating support is less than one micron in thickness.
- 5. A microfabricated transducer as in claim 4 in which the silicon nitride membrane is less than one micron thick.
- 6. A microfabricated transducer as in claim 4 in which the silicon nitride membrane is between 0.1 and 2 .mu.m thick.
- 7. A microfabricated transducer as in claim 4 in which said silicon nitride membrane is between 0.1 and 2 .mu.m thick and has a residual stress between 10 and 400 MPa.
- 8. A microfabricated ultrasonic transducer as in claim 1 in which the pressure in the sealed cavity is between 100 mTorr and atmospheric.
- 9. An ultrasonic transducer including:
- a conductive silicon substrate;
- a plurality of silicon nitride membranes having one or more apertures less than 0.3 microns in diameter;
- supports comprising thin insulating material supporting each of said membranes above the substrate;
- a sealing silicon nitride layer formed on said membranes extending at least partially into said apertures to seal the membrane;
- a thin metal film making electrical connection to the outer surface of said silicon nitride layer; and,
- a thin metal film making electrical connection to the other surface of said conductive substrate.
- 10. A microfabricated ultrasonic transducer as in claim 9 which said sealed membrane, insulating support and substrate form a sealed cavity.
- 11. A microfabricated ultrasonic transducer as in claim 10 in which the sealed cavity is evacuated.
- 12. A microfabricated transducer as in claims 9, 10, or 11 in which said insulating support is less than one micron in thickness.
- 13. A microfabricated transducer as in claim 12 in which the silicon nitride membrane is less than one micron thick.
- 14. A microfabricated transducer as in claim 12 in which the silicon nitride membrane is between 0.1 and 2 .mu.m thick.
- 15. A microfabricated transducer as in claim 12 in which said silicon nitride membrane is between 0.1 and 2 .mu.m thick and has a residual stress between 10 and 400 MPa.
- 16. A microfabricated ultrasonic transducer as in claim 12 in which the pressure in the sealed cavity is between 100 mTorr and atmospheric.
- 17. A microfabricated ultrasonic transducer array comprising a plurality of transducers as in claim 9 arranged in line.
- 18. A microfabricated ultrasonic transducer array comprising a plurality of transducers as in claim 9 arranged in a two dimensional array.
Parent Case Info
This application is a continuation-in-part of application Ser. No. 08/327,210, filed Oct. 21, 1994, now patent U.S. Pat. No. 5,619,476.
US Referenced Citations (25)
Foreign Referenced Citations (1)
Number |
Date |
Country |
892773 |
Jul 1949 |
DEX |
Continuation in Parts (1)
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Number |
Date |
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Parent |
327210 |
Oct 1994 |
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