Patent Grant
8840981
Reference is made to commonly assigned U.S. Ser. No. 13/228,881, filed concurrently herewith Sep. 9, 2011, directed towards “Printhead for Inkjet Printing Device,” the disclosure of which is incorporated by reference herein in its entirety.
This invention relates generally to the field of microfluidic devices, and in particular to microfluidic devices where chemically resistant thin film layers are applied to fluid transport features of the microfluidic device.
Microfluidic technologies refers to a set of technologies that control the flow of minute amounts of liquids or gases through fluid transport features having small characteristic dimensions, such that the volume of fluid flowing through the transport feature is typically measured in nanoliters and picoliters. Microfluidic devices comprise a large diverse class of devices employing microfluidic technologies for the purpose of transporting and analyzing such extremely small volumes of fluid. At the smaller end of the spectrum, some microfluidic devices may also be referred to as nanofluidic devices, and the term microfluidic device employed herein is intended to include such nanofluidic devices.
Fluid transport in microfluidic devices is accomplished through fluid transport features formed in or on material layers, in the form of topological substrate features such as, for example, channels, troughs, and apertures which provide fluidwise transport and/or fluidwise communication between various features of the device by allowing the passage of fluid. Such fluid transport features typically have at least one characteristic dimension (e.g., at least one of a length, width or depth dimension of a channel or trough, or a diameter or length of an aperture, through which fluid flows) of less than 500 micrometers, more typically less than 100 micrometers. With such typical channel or trough and aperture characteristic dimensions in the region of tens of microns, devices comprising complex networks of fluidic microchannels and interconnects in organic (polymer) substrates or inorganic (e.g., silicon wafer) substrates can be defined on a microfluidic chips within the size of a few square centimeters.
A microfluidic device may be as simple as a single component used to transport a microscopic volume of fluid from one location to another, or it may be comprised of several components connected together such that all components are in fluid-wise communication. Thus a microfluidic device may be comprised of a single microfluidic component (a single component that is employed to accomplish a particular purpose) or an assembly of components (a plurality of components that are assembled in a specific order to accomplish a particular purpose). Some of the more familiar microfluidic devices that have been developed are inkjet printers (typically in the form of an integrated array of microfluidic devices for printing an array of ink drops), including drop on demand printers and continuous inkjet printers, and “lab-on-a chip” assay devices. Microfluidic devices may be employed for various purposes including mixing, transporting, and delivering specific chemical reagents (both liquid and gas) to a specific location for particular purposes including blood analysis, DNA analysis by various methods, chemical analysis, chemical synthesis, image formation, and the like.
One of the driving forces behind the development of microfluidic technology (meaning microfluidic device design and theory, engineering, and manufacturing) for chemical analysis and other potential applications is that the timescale for microscale chemical reactions is fast because of the unique physics associated with small fluid volumes and that microfluidic devices may be easily automated to do routine assay and sample preparation. Microfluidic devices employ two-dimensional or three-dimensional structures for the purpose of controlling the flow of small fluid volumes. These structures may be complex surfaces, trenches or troughs, sealed trenches or channels, and apertures or holes or other complex three-dimensional structures such as flow separators, flow splitters, flow obstructers (employed to induce mixing), valves to control fluid flow, and other various types of microscopic structures containing various features including movable members that may be employed for various purposes such as pumping fluids as well as controlling fluid flow.
Because of the extremely small dimensions involved in microfluidic devices and the presence of accelerated reactions (microscale reaction occur faster because of the unique physics associated with small fluid volumes), including corrosion reactions, microfluidic devices have unique technological challenges associated with the chemical stability and, in many cases, biocompatibility of the device. Chemical and thermal stability of the materials employed to construct a microfluidic device is required to ensure that the extremely small volumes of fluid employed in microfluidic devices are not contaminated by the device itself during use. Furthermore, the use of the properties of microfluidic fluid transport features themselves to manipulate and alter the properties of fluid itself in these microfluidic transport features (by, for example, the formation of microscale and nanoscale self assembled structures in the fluid phase as a result of the fluid transport features interacting with the fluid that is resident in the microfluidic device) may be complicated by inadvertent contamination of the fluid by the device itself leading to irreproducible results. Such inadvertent contamination complicates analysis methods and may also introduce undue bias in analysis results obtained from the microfluidic device.
In the case of all analyses of biological fluids, it is highly preferable that the surfaces of the microfluidic device be highly biocompatible as well as chemically inert and non-contaminating to both the analyte as well as any reagent employed for the biological assay. Polydimethylsiloxane (PDMS), one of the common materials employed for the fabrication of microfluidic devices, and is highly biocompatible; however, this material is also viscoelastic and not structurally rigid, thereby causing problems with some device designs. PDMS also has an extremely high permeability that allows diffusion of many substances into and through the PDMS matrix including gases, small molecules and even polymers. In other words, the PDMS matrix employed in microfluidic devices can influence the concentration of materials in the analyte because species in the analyte may diffuse directly into the PDMS device structure. The concentration gradient of chemical species that occurs at the interface between the fluid and the PDMS wall structure provides a potent thermodynamic driving force for the diffusion of species into the PDMS wall structure. The small fluid volumes employed in microfluidic devices will be strongly affected by these diffusion processes and such a situation is highly undesirable for the reliable operation of microfluidic devices.
The use of various surface modification methods including plasma treatment and the application of additional films and coatings on microfluidic devices is known. Mukhopadhyay and co-workers (Mukhopadhayay, S; Roy, S. S.; D'Sa, R. A.; Mathur, A.; Holmes, R. J.; McLaughlin, J. A.; Nanoscale Research Letters, 2011, 6:411), e.g., investigated the use of various surface modifications, (including dielectric barrier discharge surface modification in air, nitrogen plasma treatment using low pressure RF plasma, coatings of amorphous hydrogenated carbon, and coatings of Si-doped hydrogenated amorphous carbon) on microfluidic devices fabricated from polymethylmethacrylate (PMMA) to see how such treatments influenced fluid flow in the device.
Biological applications of microfluidic devices also require that any film or coating employed on such an apparatus show a high degree of biocompatibility. This is especially important if the microfluidic device is employed in analyses of viable cells and other cellular structures whose inherent properties such as enzymatic activity or specific substrate adsorption might be compromised by unfavorable compatibility reactions with the microfluidic device materials of construction. Hafnium metal, hafnium oxide, zirconium metal, zirconium oxide, tantalum metal, and tantalum oxide have all been examined and found to possess an extremely high degree of biocompatibility. Matsuno et al (Matsuno H, Yokoyama A, Watari F, Uo M, Kawasaki T, Biomaterials. 2001 June; 22(11):1253-62) found that all three of these materials were biocompatible. S. Mohammadi et al (Journal of Materials Science: Materials in Medicine Volume 12, Number 7, 603-611, DOI: 10.1023/A:1011237610299 “Tissue response to hafnium” S. Mohammadi, M. Esposito, M. Cucu, L. E. Ericson and P. Thomsen) specifically investigate hafnium and found identical results. The biocompatibility of Ta is well known (see, e.g., Robert J. Hartling “Biocompatibility of Tantalum” at www.x-medics.com/tantalum—biocompatibility.htm and reference therein) and it has been employed as a biocompatible corrosion resistant element for stents, the biocompatibility being primarily due to the thin layer of extremely chemically inert oxide that is formed on the surface of tantalum metal upon exposure to aqueous fluids in biological systems.
The chemical stability of hafnium metal, hafnium oxide, zirconium metal, zirconium oxide, tantalum metal, and tantalum oxide are also well known. Rai et al (D. Rai, Y. Xia, N. J. Hess, D. M. Strachan, and B. P. McGrail J. Solution Chem, 30(11) (2001) 949-967), e.g., provide information concerning the solubility properties of amorphous HfO2. Comparable solubility curves for ZrO2 were derived by Curti and Degueldre (E. Curti and C. Delgueldre, Radiochimica Acta, 90(9-11)(2002)801-804) based on a survey of the solubility literature of ZrO2. Betrabet and coworkers (Betrabet, H. S.; Johnson, W. B.; MacDonald, D. D.; Clark, W.A.T. “Potential-pH Diagrams for the Tantalum Water System at Elevated Temperatures”, Proc. Electrochem. Soc. 1984, 83-94) have investigated the chemical stability of in the tantalum metal-tantalum oxide system with the construction of a Pourbaix diagram. The oxides HfO2, ZrO2, and Ta2O5 are each known to have exceptionally low chemical reactivity and solubility in aqueous fluids. In addition, these three oxides—HfO2, ZrO2, and Ta2O5—are also know to have great stability in contact with organic fluids as well as nearly all gases with the exception of halogenated acidic gases like HF and HCl.
Inkjet printing has become recognized as a prominent contender in the digitally controlled, electronic printing arena. Among the many advantages of inkjet printing is its non-impact, low-noise characteristics, its use of plain paper, and its avoidance of toner transfers and fixing. Inkjet printing mechanisms can be categorized by technology, as either drop on demand inkjet or continuous ink jet. Both drop on demand inkjet and continuous inkjet printing employ a printhead comprised of a material layer and drop forming mechanisms and nozzles that are located in or on the material layer. The drop forming mechanisms, nozzles, and associated ink channels in the printhead are provided in the form of an integrated array of microfluidic devices for printing an array of ink drops.
One type of digitally controlled printing technology, drop-on-demand inkjet printing, typically provides ink droplets for impact upon a recording surface using a pressurization actuator (thermal, piezoelectric, etc.). The actuator is also known as the drop forming mechanism. Selective activation of the actuator or drop forming mechanism causes the formation and ejection of an ink droplet that crosses the space between the printhead and the print media and strikes the print media. The formation of printed images is achieved by controlling the individual formation of ink droplets, as is required to create the desired image. With thermal actuators, a resistive heater, located at a convenient location, heats the ink causing a quantity of ink to phase change into a gaseous steam bubble. This increases the internal ink pressure sufficiently for an ink droplet to be expelled. The bubble then collapses as the heating element cools, and the resulting vacuum draws fluid from a reservoir to replace ink that was ejected from the nozzle. The resistive heaters in thermally actuated drop on demand inkjet printheads operate in an extremely harsh environment. They must heat and cool in rapid succession to enable the formation of drops usually with a water based ink with a superheat limit of approximately 300° C. Under these conditions of cyclic stress, in the presence of hot ink, dissolved oxygen, and possibly other corrosive species, the heaters will increase in resistance and ultimately fail via a combination of oxidation and fatigue, accelerated by mechanisms that corrode the heater or its protective layers (chemical corrosion and cavitation corrosion). It is known to those skilled in the art that the resistive heating element employed in the drop forming mechanism of a thermally actuated drop on demand inkjet printhead can fail because of cavitation processes and thermally activated corrosion processes occurring during operation of the inkjet printhead with the ink, printing fluid, or cleaning fluids employed in the printing system.
To protect against the effects of oxidation, corrosion and cavitation on the heater material in drop on demand printers, inkjet manufacturers use stacked protective layers, typically made from Si3N4, SiC and Ta. In certain prior art devices, the protective layers are relatively thick. U.S. Pat. No. 6,786,575 granted to Anderson et al (assigned to Lexmark) for example, has 0.7 μm of protective layers for a ˜0.1 μm thick heater—that is, 700 nanometers of protective layers for a ˜100 nanometer thick heater. U.S. Pat. Pub. 2011/0018938 discloses printing devices having ink flow aperture extending through a substrate, where side walls of the apertures are coated with a coating chosen from one of silicon dioxide, aluminum oxide, hafnium oxide and silicon nitride. The only exemplified coating is a 20,000 Angstrom (2000 nanometers) thick silicon dioxide coating.
A second type of digitally controlled printing technology is the continuous inkjet printer, commonly referred to as “continuous stream” or “continuous” inkjet printer. These printers use a pressurized ink source and a microfluidic drop forming mechanism located proximate to the flow of ink from the pressurized ink source to produce a continuous stream of ink droplets. Some designs of continuous inkjet printers utilize electrostatic charging devices that are placed close to the point where a filament of ink breaks into individual ink droplets. The ink droplets are electrically charged and then directed to an appropriate location by deflection electrodes. When no print is desired, the ink droplets are directed into an ink-capturing mechanism (often referred to as catcher, interceptor, or gutter). When print is desired, the ink droplets are directed to strike a print medium. Alternatively, deflected ink droplets may be allowed to strike the print media, while non-deflected ink droplets are collected in the ink capturing mechanism.
U.S. Pat. No. 1,941,001, issued to Hansell on Dec. 26, 1933, and U.S. Pat. No. 3,373,437 issued to Sweet et al. on Mar. 12, 1968, each disclose an array of continuous inkjet nozzles wherein ink droplets to be printed are formed by a printhead comprised of a material layer and drop forming mechanism and the drops are selectively charged and deflected towards the recording medium. This technique is known as binary deflection continuous ink jet.
Later developments for continuous flow inkjet improved both the method of drop formation, drop forming mechanisms, and methods for drop deflection. For example, U.S. Pat. No. 3,709,432, issued to Robertson on Jan. 9, 1973, discloses a method and apparatus for stimulating a filament of working fluid causing the working fluid to break up into uniformly spaced ink droplets through the use of transducers and a method for controlling the trajectories of the filaments before they break up into droplets.
U.S. Pat. No. 6,079,821, issued to Chwalek et al., on Jun. 27, 2000, discloses a continuous inkjet printer and a printhead with a drop forming mechanism that uses actuation of asymmetric resistive heaters to create and control the trajectory of individual ink droplets from a filament of working fluid. A printhead includes a pressurized ink source and an asymmetric heater operable to form printed ink droplets and non-printed ink droplets. Printed ink droplets flow along a printed ink droplet path ultimately striking a print media, while non-printed ink droplets flow along a non-printed ink droplet path ultimately striking a catcher surface. Non-printed ink droplets are recycled or disposed of through an ink removal channel formed in the catcher.
While the inkjet printer disclosed in Chwalek et al. works extremely well for its intended purpose, using a heater to create and deflect ink droplets increases the energy and power requirements of this device. It is known to those skilled in the art that increased energy and power dissipated in an inkjet printhead increases the possibility of printhead failure caused by thermally activated corrosion and cavitation processes that occur during the operation of the inkjet printhead in contact with the ink, printing fluid, or cleaning fluid.
U.S. Pat. No. 6,588,888, issued to Jeanmaire et al. on Jul. 8, 2003, discloses a continuous inkjet printer capable of forming droplets of different size and having a droplet deflector system for providing a variable droplet deflection for printing and non-printing droplets. The printhead disclosed by Jeanmaire comprises a plurality of nozzles and a drop forming mechanism on each nozzle comprised of an annular heater at least partially formed or positioned on or in a silicon material layer of the substrate of the printhead around corresponding nozzles. Each heater is principally comprised of a resistive heating element that is electrically connected to a controllable power source via conductors. Each nozzle is in fluid communication with an ink supply through an ink passage or liquid chamber also formed in printhead. It is known to those skilled in the art that the thermally actuated resistive heating elements disclosed as part of the drop forming mechanism can become non-functional as a result of thermally activated corrosion processes that occur when the inkjet printhead is operated in contact with the ink, printing fluid, or cleaning fluid employed in the printing system.
It is known, then, that both drop on demand printheads and continuous inkjet printheads are subject to corrosion and wear during use as a result of exposure to inks and other fluids employed in printing systems. The printhead in both drop on demand and continuous inkjet printing apparatus is in continual contact with ink and it has been found that both drop on demand and continuous inkjet printheads are degraded over time by continual contact with ink and other fluids employed in printing apparatus. For example, Beach, Hilderbrandt, and Reed observed as early as 1977 the importance of material selection in inkjet printers as it relates to corrosion and wear resistance. B. L. Beach, C. W. Hilderbrandt, W. H. Reed; IBM Journal of Research and Development, volume 21, January 1977, pp 75-80; “Materials Selection for an Inkjet Printer”. As mentioned previously, a common method to address the observed performance degradation of both drop on demand printheads and continuous inkjet printheads is to coat the printhead with a corrosion resistant and/or wear resistant layer or film. Lee, Eldridge, Liclican, and Richardson proposed the use of passivating layers to address corrosion and wear resistance in continuous inkjet printheads and found that amorphous films containing silicon, carbon, and hydrogen were effective for improving corrosion and wear resistance. The amorphous films containing silicon, carbon, and hydrogen are also called amorphous silicon carbide films, amorphous silicon carbide layers, silicon carbide, and SiC; M. H. Lee, J. M. Eldridge, L. Liclican, And R. E. Richardson Jr.; Journal of the Electrochemical Society 129(10), (1982), 2174-2178; “Electrochemical test to evaluate passivation layers: Overcoats of Si in Ink”. Gendler and Chang demonstrated the corrosive effects of ink formulations on amorphous silicon carbide layers applied onto inkjet printheads. P. L. Gendler and L. S. Chang, Chem. Mater. 3 (1991)635-641; “Adverse Chemical Effects on the Plasma—Deposited Amorphous Silicon Carbide Passivation Layer of Thermal Ink-Jet Thin-Film Heaters”. The chemical stability requirements for an inkjet printhead including the drop forming mechanism are well known to those skilled in the art. The requirements for chemical stability of the printhead include stability of the printhead under complete immersion in ink and any other additional fluid employed in the printing system such as cleaning fluids and image stabilization fluids containing polymers, dispersants, surfactants, salts, solvents, humectants, pigments, dyes, mordants, and the like that are familiar to those skilled in the art. It is known that it is highly desirable for the printhead to have immunity to the effects of both anionic and cationic contamination from diffusion processes that occur upon exposure of the printhead to ink or other fluids employed in the printing system that contain cations and anions. These requirements are applicable to all inkjet printing technologies including drop on demand and continuous inkjet digitally controlled printing technologies.
In U.S. Pat. No. 6,502,925 Anagnostopoulos et al described an inkjet printhead comprised of a material layer and a drop forming mechanism. The material layer is formed of a silicon substrate and includes a nozzle array as well as an integrated circuit formed therein for controlling operation of the print head. The silicon substrate has one or more ink channels, also called ink chambers, formed therein along the longitudinal direction of the nozzle array. The material layer also includes an insulating layer or layers that overlay the silicon substrate and the insulating layer or layers has a series or an array of nozzle openings or bores formed therein along the length of the substrate and each nozzle opening communicates with an ink channel. Each nozzle of the nozzle array is in fluid communication with an ink supply through an ink channel, ink passage, or liquid chamber also formed in printhead. The area comprising the nozzle openings forms a generally planar surface to facilitate maintenance of the printhead. The drop forming mechanism, part of the material layer, is comprised of a resistive heater element, also called a resistive heater, and at least one drop forming mechanism is associated with each nozzle opening or bore for asymmetrically or symmetrically heating ink as ink passes through the nozzle opening or bore. It is known to those skilled in the art that the material layer of the printhead, as well as the drop forming mechanism in or on the material layer, is also susceptible to chemical corrosion processes and that an additional pathway available for printhead failures involves failure of the material layer and any associated electrical circuitry as a result of corrosion of the material layer or any element thereof.
The useful life of an inkjet printhead with its associated material layer and thermal actuators or resistive heaters that are part of the drop forming mechanism is dependent on a number of factors including, but not limited to, dielectric breakdown, corrosion, fatigue, electromigration, contamination, thermal mismatch, electrostatic discharge, material compatibility, delamination, and humidity, to name a few. Accordingly, the incorporation of layers, films or coatings on the material layer of the printhead, drop formation mechanism, and liquid chamber are employed to provide a printhead robust enough to withstand the different types of failure modes described above. Various types of layers, coatings, and films have been investigated for corrosion resistance. U.S. Pat. No. 6,786,575 to Anderson et al, e.g., discloses use of passivation layers comprising silicon carbide and silicon nitride. Combinations of layers, coatings, and films, are also called combination layers, combination coatings, and combination films. Combination layers in layers, films, or coatings are layers, films, or coatings where essentially a layer comprised of one material overlays and is in contact with a second layer of a second material, the second material being of different chemical composition than the first material. Combination layers comprised of only two layers, films or coatings of two different materials are also called bilayers. Combination layers can be called trilayers when three different materials are used and overlay each other, and so on. Complex coatings may be comprised of multiple combination layers. For example, a complex film, layer or coating may be comprised of multiple bilayers or multiple combination layers, combination films, or combination coatings. Complex coatings comprised of multiple layers of different materials where at least two differentiable, chemically different materials are present are also known as stacks or laminates. Films comprised of two or more layers of different chemically distinguishable materials are also sometimes called laminates, laminate films, laminate layers, laminate coatings, multilayer films, and the like. Laminate films having at least two layers whose thickness is less than 100 nm can be called microlaminates. Microlaminates are also sometimes called nanolaminates.
Combination layers, and specifically complex multilayered films comprised of multiple bilayers have been investigated for corrosion resistance in various applications with mixed results. For example, Matero and coworkers explored the use of combination layers of Al2O3—TiO2 (also called bilayers of Al2O3—TiO2) as corrosion resistant coatings on 304 stainless steel as described by R. Matero, M. Ritala, M. Leskalae, T. Salo, J. Aromaa, A. Forsen; J. Phys. IV 9 (1999) Pr8-493 through Pr9-499; “Atomic Layer deposited thin films for corrosion protection”. Whereas Al2O3 and TiO2 alone were found to have unsatisfactory corrosion resistance, Al2O3—TiO2 bilayer structures showed improved corrosion resistance performance relative to the binary oxide films. The authors specifically remarked, however, that they observed “no clear tendency to improve performance by increasing the number of layers”. Almomani and Aita investigated the use of combination layers in the hafnia-alumina system, that is, the HfO2—Al2O3 system, for improved corrosion resistance of biomedical implants as described by M. A. Almomani and C. R. Aita, in J. Vac. Sci. Technol. A, 27(3)(2009)449-455 “Pitting corrosion protection of stainless steel by sputter deposited hafnia, alumina, and hafnia-alumina nanolaminate films”.
Combination layers have also been investigated for functions distinct from providing chemical resistant corrosion protection. U.S. Pat. No. 7,426,067 discloses atomic layer deposition of various layer compositions or combination of layers on micro-mechanical devices to provide, e.g., physical protection from wear and providing electrical insulation. Control of crystallization of zirconium oxide and hafnium oxide in laminate films of zirconium oxide or hafnium oxide with aluminum oxide interlayers to achieve atomically smooth surfaces for capacitor and interlayer dielectric applications has been discussed in the literature. Hausmann and Gordon [D. M Hausmann and R. G. Gordon in Journal of Crystal Growth, 249 (2003) 251-261; “Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films”], e.g., reported that the minimum number of aluminum oxide layers needed to retard crystal growth between two thicker layers of hafnium or zirconium oxide was approximately 5 layers of aluminum oxide (0.5 nm aluminum oxide) between approximately 100 layers of zirconium or hafnium oxide (10 nm zirconium or hafnium oxide). Control of crystallization of hafnium oxide in laminate films of hafnium oxide with tantalum oxide interlayers to achieve smooth surfaces for capacitor applications has been discussed in the literature. Kukli, Ihanus, Ritala, and Leskela [K. Kulki, J Ihanus, M. Ritala, M. Leskela, Appl. Phys. Lett. 68(26) 24 Jun. 1996 p 3737] reported that HfO2 crystallization is observed when the thickness of the HfO2 layer in HfO2—Ta2O5 nanolaminates is greater than 10 nm.
It is desirable that inkjet printheads used for continuous inkjet printing should operate without failure for extended time periods. One type of failure described above that can require printhead replacement is related to corrosion, chemical dissolution, and optionally cavitation induced failure of thermally actuate resistive heating elements in the printhead drop forming mechanism. It is also known that other heated and unheated surfaces of the printhead such as those located anywhere on the material layer of the printhead including surfaces of integrated circuits incorporated on the printhead material layer that have the possibility of exposure to ink or other fluids used in a printing system can corrode upon exposure to the inks and fluids employed in a digitally controlled printing system. Corrosion of surfaces on or proximate to the material layer can result in the printhead becoming non-functional. It is understood by those skilled in the art that a more chemically resistant and thermally stable inkjet printhead is highly desirable and can provide substantial benefits for ease of use, equipment maintenance, and overall versatility of a printing apparatus. Chemical resistance, thermal stability and biocompatibility would further be beneficial in other types of microfluidic devices, such as lab-on-a-chip and microreactor devices. Thus, there is a need for improved coatings for microfluidic devices that are chemically resistant, thermally stable, and biocompatible.
It is not sufficient that a film employed for the purpose of improving the performance of a microfluidic device be chemically inert and biocompatible as in the case of hafnium metal, hafnium oxide, zirconium metal, zirconium oxide, tantalum metal, and tantalum oxide. If these films or coatings have porosity or defects, these defects will influence the chemical purity of any fluid contacting the surface of the film because species from the fluid can diffuse into these defects. The concentration of species in the small volumes of fluid employed in microfluidic devices is strongly influenced by interactions with the microfluidic device itself and the composition of the fluid in the microfluidic device will, therefore, be strongly influenced by diffusion of species from the fluid into the device structure. It is important, then, to minimize the number of defect present in any sort of film or coating employed in a microfluidic device to improve and enhance the reliable operation of the microfluidic device or component.
It is therefore an objective of the present invention to provide a microfluidic device comprised of a material layer and a fluid transport feature having at least one characteristic dimension of less than 500 micrometers formed in or on the material layer, that is substantially improved in chemical resistance, thermally stability, and biocompatibility. The objective of the present invention is achieved by providing a chemically resistant, thermally stable, and biocompatible multilayer coating onto and in contact with the microfluidic device wherein the multilayer coating comprises one or more thin film layers comprised primarily of hafnium oxide or zirconium oxide and one or more thin film layers comprised primarily of tantalum oxide, the multilayer coating being located on a surface of the fluid transport feature.
In one embodiment, the multilayer coating may include multiple alternating thin film layers consisting essentially of hafnium oxide and consisting essentially of tantalum oxide, being located on a surface of a fluid transport feature of a microfluidic device. In another embodiment of the invention, the multilayer coating may include multiple alternating thin film layers consisting essentially of zirconium oxide and consisting essentially of tantalum oxide, being located on a surface of a fluid transport feature of a microfluidic device. In one embodiment, the microfluidic device may be in the form of a drop forming mechanism in a printhead of an inkjet printer, and in a specific embodiment may be a drop forming mechanism in a continuous inkjet printhead employed in a continuous stream inkjet printer.
The corrosion resistant film employed in the invention is particularly beneficial because it can be formed on the surfaces of fluid transport features of microfluidic devices using film forming methods that produce conformal films that cover complex geometries, thereby enabling the corrosion resistant film to be formed on all surfaces of the fluid transport features of the microfluidic device that come in contact with reactants, analytes, inks or other fluids employed in the microfluidic device.
An additional aspect of the invention is the use of an abrasion resistant layer, such as a layer containing silicon, nitrogen, carbon and oxygen, to provide a mechanically protective film in combination with the chemically resistant films employed in the present invention. Such abrasion resistant layer may be provided overlaying and in contact with all areas or alternatively only portions of the chemically resistant film, or alternatively may be provided below all areas or selected portions of the chemically resistant film.
In the detailed description of the preferred embodiments of the invention presented below, reference is made to the accompanying drawings, which are not necessarily to scale, in which:
a and 3b are cross-sectional side views of the nozzle and drop forming mechanism in some different types of inkjet printheads, where
The present description will be directed in particular to elements forming part of, or cooperating more directly with, apparatus and compositions in accordance with the present invention. It is to be understood that elements not specifically shown or described may take various forms well known to those skilled in the art.
Typical microfluidic device components include pumps, valves, mixers, filters, and separators. Examples of microfluidic pumps include: thermocapillary pumps in which temperature pulses furnished by thermal actuators create a net pressure imbalance between the front and rear ends of the drop in the channel, thus causing the drop to move; transpiration based micropumps in which a miniscus of a fluid is pinned at a hydrophobic interface and the evaporation of fluid at the miniscus induces fluid pumping through the volume of a capillary, microfluidic channel; electroosmotic pumps in which an electric field is applied across the length of a capillary, microfluidic fluidic channel and the mobile counterions in the diffuse layer of the electrical double layer produced by the interaction between the fluid and the surface charges on the surfaces which the fluid contacts experience an electrostatic force due to the applied field that causes them to migrate toward the oppositely charged electrode. In the case of electroosmotic pumps the counterion layer of the electrical double layer (also called the Gouy layer, the Gouy-Chapman layer, the Debye layer) effectively forms a “sheath” that entrains the bulk liquid, putting it into motion in the same direction. Key parameters governing electroosmotic pumping performance include applied electric field (voltage), cross-sectional dimensions of the channel, surface charge density at solid surfaces in the capillary, microfluidic channel in contact with the fluid and counterion density (pH) of working fluid. In particular, the characteristics of the surfaces of capillary, microfluidic channels in contact with the fluid in electroosmotic pumps are particularly important and for some application it is desirable to suppress electroosmotic flow at high electric fields. In the latter case it is important to be able to control the surface charges in the microfluidic device. It is recognized by those skilled the art of microfluidic devices that surface modification of microfluidic devices—including plasma based surface modification as well as the application of thin films and coatings—is a particularly attractive method for accomplishing control of surface charge. It is known in the art of thin film fabrication and design that a thin film comprised of multiple layers may hold advantages for controlling and manipulating surface charge through appropriate choice of materials, including the outermost surface of a multilayer thin film or coating.
Other unique methods of fluid transport employed in microfluidic devices include electrowetting of drops in which a droplet of conductive liquid at ground potential is placed on a horizontal, dielectric-coated electrode with a hydrophobic surface, a voltage is applied to the electrode and the droplet flattens and spreads in response to the applied field due to dipole rearrangement in the fluid. Fluid transport can be accomplished by using an array of dielectric coated electrodes to which voltage is applied in specific sequences designed to promote wetting and dewetting of the fluid on the surface in such a fashion as to accomplish drop motion on the two-dimensional surface. Dielectric materials with large dielectric constants are favored for applications such as electrowetting. It is known that thin films comprised of layers of dielectric materials can have exceptionally high dielectric constants.
Thus many methods are employed for the design and fabrication of microfluidic pumps including the use of applied pressure differences (for example, Poiseuille flow), the use of capillary forces (for example, thermocapillary pumping), the use of electric fields (for example, electro-osmotic and/or electrophoretic flows), and the use of interfacial tension gradients (for example microfluidic devices that rely on Marangoni flows to accomplish fluid pumping or drop transport through the use of thermal gradients applied to the fluid or drops). Many other methods familiar to those skilled in the art of design and fabrication of microfluidic devices exist as well.
Mixing of fluids in microfluidic devices can be accomplished by both active and passive methods. Active methods include the use of electro-osmotic flows with static or alternating fields, the use of magnetic stirring with magnetic microbeads, the use of bubble-induced actuation in which bubbles are manipulated so as to induce local regions of mixing in the microfluidic device, the use of ultrasonic energy to induce mixing. There are other active methods of mixing as well that are familiar to those skilled in the art of design and fabrication of microfluidic devices. Passive methods employed for mixing fluids in microfluidic devices include the use of complex topologies to induce mixing in lamellar fluid flows with low Reynolds numbers by causing localized turbulence as the fluid flows around the topologies in the channels. Alternatively, mixing of the low Reynolds number lamellar flows found in microfluidic devices can be accomplished through the use the so-called “split and recombine” method in which three-dimensional channel structures are fabricated using multiple lithography steps with multilayer alignment. The three-dimensional channel structures are used to divide the fluids to be mixed into multiple streams and the multiple streams are then reassembled (or recombined) as a complex fluid consisting of alternating lamellae of different fluids. This complex laminate fluid flowing in the channels of the microfluidic device in then subjected to mixing through the use of a transverse flow field forces which may be thought of as inducing flow rotation along with possible chaotic advection effects. Such transverse flow forces thus induce diffusion of species between the various lamellas in the complex fluid, resulting in mixing of the layers in the lamella of the fluid with the result that the distribution of species in the fluid becomes randomized and uniform through the fluid volume.
Valves employed in microfluidic devices may be either passive or active design. In passive valve designs there are no movable parts of the valve assembly or component and the operation of the valve requires at least two distinct fluids undergoing fluid transport in the lamellar flow regime and flow of different fluids through the valve orifice or exit opening is determined by the internal pressures of one fluid relative to the other at the spatial location where the fluids contact each other. Active valve design employ movable members which can be actuated by various means to achieve motion of the movable members to restrict, impede or stop the transport of a fluid in the spatial location of the valve assembly. Actuation of the movable members of a valve is normally achieved by the application of some sort of energy, including electromagnetic energy, pneumatic energy, optical energy (for example, a photon flux) as well as thermal energy, radiofrequency energy and the like.
Separators and filters employed in microfluidic devices may be either passive or active design. The function of these microfluidic components is to remove or separate particles from or in a fluid flow in a microfluidic device. Separators and filters may be used to either completely remove particles from the fluid flow in a microfluidic device or they may be used to immobilize particles in the microfluidic device for various purposes. For example, separators and filters equipped with magnets may be employed to immobilize magnetic beads that otherwise would be transported by fluid flow through a microfluidic device. Separators and filters employed in microfluidic devices may be incorporated into a single component design or they may be segregated into distinct microfluidic components as part of a larger microfluidic device. Passive separator and filter designs have no moving parts in the separator or filter assembly or component. Examples of passive separators are magnetic microfluidic separators with fixed permanent magnets or magnetic particles incorporated as part of the microfluidic device; centrifugal microfluidic devices and inertial microfluidic devices where particle separation is accomplished through manipulation of fluid flow based on the design of the channels through which fluid passes is the microfluidic device. The operation of passive microfluidic separators and filters requires the passage of at least one fluid flow undergoing fluid transport through the microfluidic device or component in the lamellar flow regime. Active microfluidic separator and filter device or component designs employ additional forms of energy (beyond the energy contained in the fluid flow itself) which are applied from an external power source to accomplish the separation or immobilization of particles from a fluid flow in a microfluidic device. Examples of active microfluidic separators and filters include magnetic microfluidic separators with electromagnets which can be energized at to accomplish the separation of magnetic particles from a fluid flow; electrohydrodynamic particle filters and separators which utilize radiofrequency energy to accomplish the formation of thermally induced eddy currents in microfluidic channels for the purpose of retaining specific particle sizes within the fluid channel of the microfluidic device; microfluidic ultrasonic separators where ultrasonic energy is employed to affect separation of particles from a lamellar fluid flow in a microfluidic device fluid channel through the use of standing waves which concentrate particles along certain planes of the fluid flow within a straight fluid channel.
Additional types of microfluidic filters for elimination of particles from fluid flows in microfluidic devices are known. For example, self assembly of particles within and proximate to flow restrictions located in microfluidic channels of microfluidic devices and components can provide a tortuous paths for fluids in microfluidic devices and cause particles entrained in the fluid that are larger than the openings in the self assembled particle assembly to be retained on the surface of the self-assembled particle assembly whilst the particle free fluid passes through the self-assembled particle assembly. Likewise, micromachined arrays of two-dimensional and three-dimensional features can be used to provide a tortuous path for fluid and cause particles larger than the openings in the two-dimensional and three-dimensional features to be retained whilst the particle free fluid passes through the two-dimensional and three-dimensional features.
Microfluidic devices may be fabricated on inorganic substrates employing conventional technologies such as those employed for silicon-based substrate micromachining (resist application and development followed by aqueous or plasma based etch steps). Alternatively, microfluidic devices may be fabricated from polymeric materials using molding methods such as those proposed by Whitesides et al (see, e.g., “Rapid prototyping of microfluidic switches in poly(dimethylsiloxane) and their actuation by electro-osmotic flow,” Duffy, David C.; Schueller, Olivier J. A.; Brittain, Scott T.; Whitesides, George M. Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Mass., USA. Journal of Micromechanics and Microengineering (1999), 9(3), 211-217. Publisher: Institute of Physics Publishing). Polymeric materials employed may comprise, e.g., polysilicone, polyacrylic, or polyurethane materials, and in specific embodiments a polydimethylsilicone (PDMS), polymethylmethacrylate (PMMA), or polyurethane material layer. An example of the sequence of steps that can be used to mold PDMS microfluidic devices beginning with formation of a master mold is: Step 1. Spin coat a photoresist (negative) on a silicon wafer; Step 2. Transfer a pattern from chrome mask to photoresist layer by exposure in UV light; Step 3. Bake and develop the photoresist; Step 4. Remove the parts of the photoresist that have not undergone photo-polymerization; Step 5. Molding PDMS onto photoresist master by contacting the patterned silicon wafer with a PDMS polymer mixture; Step 6. Curing and releasing of PDMS structures from the patterned silicon wafer master; Step 7. (Packaging) Bond the cure PDMS structure to a proper substrate such as a′ piece of glass or a silicon wafer for use.
Microfluidic devices may operate at ambient temperature and pressure where ambient temperature and pressure represents the temperature and pressure measured in the surrounding room environment of the device, at below ambient temperature or pressure, or above ambient temperature or pressure, or any combination of such conditions. In addition, the fluids to which microfluidic devices may be exposed can comprise a wide array of viscosities, chemical reactivities, and corrosiveness depending on the desired application of the microfluidic device.
One specific embodiment of a microfluidic device is the drop forming mechanism of a liquid emission device such as a digitally controlled drop-on demand inkjet printer. Drop-on-demand (DOD) liquid emission devices have been known as ink printing devices in digitally controlled ink jet printing systems for many years. Early devices were based on piezoelectric actuators such as are disclosed in U.S. Pat. Nos. 3,946,398 and 3,747,120. A currently popular form of ink jet printing, thermal ink jet (or “thermal bubble jet”), uses electrically resistive heaters to generate vapor bubbles which cause drop emission, as is discussed in U.S. Pat. No. 4,296,421.
In another digitally controlled inkjet printing process, known as continuous inkjet, a continuous stream of droplets is generated, a portion of which are directed in an image-wise manner onto the surface of the image-recording element, while un-imaged droplets are caught and returned to an ink sump or ink reservoir. Continuous inkjet printers are disclosed in U.S. Pat. Nos. 6,588,888; 6,554,410; 6,682,182; 6,793,328; 6,866,370; 6,575,566; and 6,517,197. Anagnostopolous et al described a CMOS/MEMS integrated inkjet print head and method of forming same in U.S. Pat. No. 6,943,037 dated Sep. 13, 2005. All references in U.S. Pat. No. 6,943,037 are hereby incorporated by reference herein.
Referring to
Recording medium 42 is moved relative to printhead 40 by a recording medium transport system 44, which is electronically controlled by a recording medium transport control system 46, and which in turn is controlled by a micro-controller 48. The recording medium transport system shown in
Ink is contained in an ink reservoir 50 under pressure. In the non-printing state, continuous ink jet drop streams are unable to reach recording medium 42 due to an ink catcher 52 that blocks the stream and which may allow a portion of the ink to be recycled by an ink recycling unit 54. The ink recycling unit reconditions the ink and feeds it back to reservoir 50. Such ink recycling units are well known in the art. The ink pressure suitable for optimal operation will depend on a number of factors, including geometry and thermal properties of the nozzles and thermal properties of the ink. A constant ink pressure can be achieved by applying pressure to ink reservoir 50 under the control of ink pressure regulator 56. Alternatively, the ink reservoir can be left unpressurized, or even under a reduced pressure (vacuum), and a pump is employed to deliver ink from the ink reservoir under pressure to the printhead 40. In such an embodiment, the ink pressure regulator 56 can comprise an ink pump control system.
The ink is distributed to printhead 40 through an ink channel 57. The ink preferably flows through slots or holes etched through a material layer (e.g., a silicon substrate) of printhead 40 to its front surface, where a plurality of nozzles and drop forming mechanisms, for example, heaters, are situated. The nozzles and internal nozzle bores have diameters and lengths of less than 100 micrometers (typically diameter of about 10 micrometers and length of about 5 micrometers), and thus the printhead comprises an integrated array of microfluidic devices. When printhead 40 is fabricated from silicon, drop forming mechanism control circuits 36 can also be integrated with the printhead. Printhead 40 also includes a deflection mechanism (not shown in
The printhead employed in a digitally controlled inkjet printing apparatus is comprised of at least a material layer and a drop forming mechanism. In a preferred embodiment of this invention the material layer may contain within a semiconductor material (silicon, etc.) and may contain integrated circuits, also called integrated drivers, that may be formed using known semiconductor fabrication techniques such as CMOS circuit fabrication techniques and micro-electro mechanical structure (MEMS) fabrication techniques. However, it is specifically contemplated and therefore within the scope of this disclosure that the material layers of the printhead employed in a digitally controlled inkjet printing apparatus may be formed from any materials using any fabrication techniques conventionally known in the art of both drop on demand and continuous inkjet printing. Thus the material layer may be comprised of multiple materials or combinations of materials both organic and inorganic, including silicon; metals such as stainless steel or nickel; polymers; ceramics such as aluminum oxide or other oxides such as those used in the construction of printheads containing piezoelectric elements prepared from for example, lead zirconate titanates and the like; quartz, vitreous quartz or other glasses; or any other material known in the art which is suitable for use as a material layer in printheads in a digitally controlled inkjet printing apparatus.
While the material layer and associated fluid transport features of microfluidic devices of the invention may be comprised of such various possible materials, in a specific embodiment the invention is particularly useful wherein the material layer and associated fluid transport features are a silicon-based materials, where silicon is the primary material of construction. In a particular embodiment, the microfluidic device is part of an inkjet printhead the printhead is manufactured by silicon-based CMOS-MEMS printhead fabrication techniques and the printhead incorporates microfluidic fluid channels running through the silicon, such as taught in above referenced U.S. Pat. Nos. 6,588,888 and 6,943,037, given that silicon-fluid interactions are particularly relevant to such devices.
The drop forming mechanism of the inkjet printhead may be positioned in or on the material layer of the printhead. The drop forming mechanism may be positioned about or near at least one nozzle, also referred to as a nozzle opening or bore. The drop forming mechanism may be, therefore, proximate to at least one or more nozzles. A material layer wherein at least one nozzle is located therein or thereupon is called a nozzle plate. An array of nozzles can also be located on or in the material layer and a nozzle plate may comprise a material layer with a plurality of nozzles that are positioned in or on the material layer. A plurality of nozzles arranged in an array in or on a material layer is also called a nozzle plate. It is well understood in the art of inkjet printing that arrays of nozzles on a nozzle plate are advantageous for printing in an image-wise manner onto the surface of the image-recording element. Each nozzle in or on the material layer or nozzle plate may be proximate to a drop forming mechanism and each nozzle is in fluid communication with an ink supply through means of a liquid chamber. There may be one or more liquid chambers proximate to the nozzle plate providing fluid communication with an ink supply or ink reservoir. The liquid chamber functions to transfer ink or other system fluids to the nozzle. The liquid chamber is also called a fluid chamber, an ink channel, an ink passage, a fluid passage, a backside channel, or backside ink channel. The liquid chamber or fluid chamber containing ink may also be on or in the material layer of the printhead and thereby be incorporated into the printing system in a compact trimmer. A nozzle plate may have one or more liquid chambers on or in the material layer of the printhead. Often the nozzle plate that is in or on the material layer and may be a part of the material layer of the printhead is comprised of one or more layers fabricated from various materials including fabricated metal foils or electroplated metals, ceramics, polymers, or electrically insulating single or multiple layers that overlie and are in contact with the material layers of the printhead. The nozzle plate may be electrically conductive, electrically insulating, thermally conductive or thermally insulating. It is specifically contemplated and therefore within the scope of this disclosure that the nozzle plate and material layers of printhead employed in a digitally controlled inkjet printing apparatus may be formed from any materials using any fabrication techniques conventionally known in the art of both drop on demand and continuous inkjet printing.
A number of different nozzle arrangements are used with various types of printers described above.
a shows, in cross-sectional side view, the basic arrangement of a drop ejector 58 for one type of drop-on-demand inkjet printer, commonly termed a “roof-shooter device,” and disclosed, for example, in U.S. Pat. No. 6,582,060 issued to Kitakami, et al. on Jun. 24, 2003. The drop ejector includes a fluid chamber 60 which receives ink from ink tanks 16 (
b shows a cross-sectional side view of drop ejector 58 in another type of drop-on-demand printer, commonly termed a “back-shooter device” type, and disclosed, for example, in U.S. Pat. No. 6,561,626, issued to Min et al. on May 13, 2003. In this design, the drop forming mechanism 62 is a thermal bubble jet heater 74 fabricated in the material layer 71 that forms the wall 68 that includes the nozzle 64 and the heater 74 surrounding the associated nozzle 64. The vapor bubble expands in the fluid chamber 60 in a direction opposite the direction of the drop ejected from the nozzle. With this arrangement, material layer 71 is bonded to a body 72, which includes a channel 57, to form the enclosing structure for fluid chamber 60. Nozzle 64 may have a diameter and length of less than 100 micrometers (typically diameter of about 10-15 micrometers and nozzle bore length of about 5 micrometers, as noted above), and chamber 60 and flow channel 57 may have characteristic length, width or depth dimensions of less than 500 micrometers.
The drop ejectors 58 used to form drops that are shown in
Conductors 78 and electrical contact pads 76 may be at least partially formed or positioned on the printhead 40 and provide an electrical connection between a mechanism control circuit 36 and the heaters 74. Alternatively, the electrical connection between the mechanism control circuit 36 and heater 74 may be accomplished in any well known manner. Mechanism control circuit 36 may be a relatively simple device (a switchable power supply for heater 74, etc.) or a relatively complex device (a logic controller or programmable microprocessor in combination with a power supply) operable to control many other components of the printer in a desired manner.
Further explanation of the architecture of a continuous inkjet printhead and its operation in a digitally controlled inkjet printing apparatus employing said continuous inkjet printhead are given in, for example U.S. Pat. Nos. 6,588,888 and 6,588,889 issued to Jeanmaire et al., U.S. Pat. No. 6,502,925 Anagnostopoulos et al, and references cited therein which are hereby incorporated into this disclosure.
The thermally actuated drop forming mechanisms described in
Coatings, films, or thin layers that are used for the purpose of improving the reliability of thermal actuators in microfluidic devices should provide acceptable heat transfer and exhibit acceptable thermal stability. One of the well known factors determining the suitability of coatings, films, or thin layers for improving the reliability for thermal actuators employed in microfluidics devices is related to the number of sites for fluid penetration in the coating, film, or thin layers. Almomani et al. (M. A. Almomani and C. R. Aita, J. Vac. Sci. Technol. A, 27(3)(2009)449-455 “Pitting corrosion protection of stainless steel by sputter deposited hafnia, alumina, and hafnia-alumina nanolaminate films”) have commented that previous studies in the literature “conclude that a chief reason why even a thick single layer film can fail to protect is because intrinsic mesoscopic growth structures known as ‘pinholes’ provide fast transport channels for electrolyte through the film to the underlying substrate surface. Pinholes are formed during film growth when three dimensional islands formed during the initial nucleation stages of film growth coalesce and begin to contact each other to form more continuous film. Pinholes are present in both crystalline and amorphous films.” The pinhole density is influenced by factors that influence the film structure itself. Phase transitions, such as thermally induced crystallization that produce volume changes in the film structure during either crystal growth or during the transition from an amorphous or poorly ordered film to a crystalline and highly ordered film, can increase the pinhole density of the film thereby influencing the susceptibility of the films towards fluid penetration. Thus the thermally stability of the thin film used to improve the reliability of thermal actuators in microfluidic devices and, in particular, ink jet printheads is important. One important measure of thermal stability of a film is the temperature at which the amorphous, poorly ordered, or poorly crystalline films begin to crystallize. This temperature is called the crystallization temperature or temperature of crystallization. At the crystallization temperature, there is sufficient mobility of species within the film to allow atomic rearrangements that can produce changes in the number and size of mesoscopic defects or pinholes present in the films. In many cases, the number and size of mesoscopic defects in the film increases during film crystallization thereby degrading the chemical resistant properties of the film. Thus it is desirable that the temperature of crystallization for amorphous or poorly crystalline thin protective films should at least be higher than the peak operating temperature of the thermal actuator. In the case of inkjet printheads, the temperature of crystallization should at least be higher than the peak operating temperature of any thermal actuator that is a part of the drop forming mechanism. It is additionally preferable that the crystallization temperature of the thin film is high enough so that the film does not crystallize during any subsequent processing steps employed during device fabrication such as the deposition of abrasion or wear resistant overlayers. From a practical perspective of the temperatures normally encountered during processing of semiconductor devices, it is preferred that the thin film does not show crystallization below 350° C. and films, layers, or coatings including films comprised of single or multiple layers that do not crystallize below 350° C. can be considered thermally stable.
To address the problems associated with corrosion and dielectric breakdown of microfluidic devices, such as inkjet printheads and their associated drop formation mechanisms, it has been discovered that films, coatings, and layers possessing exceptional chemical corrosion resistance and dielectric stability can be prepared from hafnium oxide (commonly referred to as hafnia, hafnium dioxide, or HfO2) or zirconium oxide (commonly referred to as zirconia, zirconium dioxide, or ZrO2), and tantalum oxide (commonly referred to as tantala, tantalum pentoxide, or Ta2O5), where the layers are individually each comprised primarily of hafnium oxide or zirconium oxide and tantalum oxide, and are preferably arranged in specific thicknesses and sequence within the overall coating incorporated in the printhead in addition to the material layer and drop forming mechanism of the printhead. Hafnium oxide, zirconium oxide and tantalum oxide are the oxides of the refractory metals hafnium, zirconium and tantalum, respectively, and these refractory oxides possess a number of desirable properties including chemically stability, low solubility, biocompatibility, and exceptional corrosion resistance. The terms “hafnium oxide layer”, “zirconium oxide layer”, and “tantalum oxide layer” and the like are employed herein for convenience to refer to layers comprised primarily of such indicated material. Such layers may further comprise other materials in compatible minor amounts, and chemical substitutions of hafnium, zirconium and tantalum with minor amounts of isovalent cations in the laminate structure is specifically contemplated. Cation substitution with appropriate charge compensation as is well known in the art of material design may be used, e.g., to tailor the properties of the laminate structures to provide desired physical properties with respect to corrosion resistant or other desired properties such as heat transfer or dielectric constant. In particular, niobium or combinations of cations whose charges and ionic size properly compensate for the pentavalent tantalum cation may be substituted into the laminate structure. Similarly, other tetravalent cations such as tin may be incorporated into the laminate structures to additionally provide a means for tuning and tailoring the properties of the laminate to provide the desired physical properties of the film.
In a particular embodiment, the invention employs a multilayer coating comprised of thin film layers consisting essentially of hafnium oxide or zirconium oxide and consisting essentially of tantalum oxide, where the layers of hafnium oxide or zirconium oxide and of tantalum oxide are arranged in specific thicknesses and sequence have a total thickness which is the sum of the thickness of all the layers of hafnium oxide or zirconium oxide and tantalum oxide of less than 100 nm, more preferably less than 50 nm. As previously mentioned, the input energy required for effective drop formation from the drop forming mechanism in a microfluidic device such as an inkjet printhead is a linear function of total film, coating, or layer thickness in interposed between the drop formation mechanism and the ink or fluid from which drops are to be formed and measurements of drop formation efficiency have shown that the films of the present invention provide excellent corrosion resistance without any measurable influence on drop formation efficiency.
Complex films, coatings, and layers comprised of alternating layers of different materials, for example like hafnium oxide and tantalum oxide, are known by various names including laminates, micro-laminates or microlaminates, nano-laminates or nanolaminates, stacks, stacked structures, alternating layer structures or alternating layer films, stacked laminates, laminate coatings, micro-laminate films, etc. Zirconium, like hafnium is a higher atomic weight member of element group IVb, while tantalum is a member of element group Vb. Thus, multilayer coatings as employed in the invention form complex laminates comprised of multiple layers of oxides selected from higher atomic weight members of distinct groups of the Period Table (i.e., group IVb and group Vb elements). When used in combination of two distinct thin film layers in accordance with the invention, such laminate materials provide further beneficial performance in comparison to use of a single metal oxide layer at an equivalent total layer thickness.
Alternating layers of hafnium oxide (or zirconium oxide) and tantalum oxide dielectrics can be prepared by any method known to those skilled in the art of film deposition. Such methods include physical vapor deposition methods such as evaporation, electron beam evaporation, ion beam evaporation, arc melting evaporation, sputter deposition using both AC and DC voltages employing both flat and cylindrical magnetron sources with appropriate targets and gases for producing oxide films, chemical vapor deposition methods using appropriate volatile precursors for hafnium and tantalum, molecular beam epitaxy, atomic layer deposition, atomic layer epitaxy. It is specifically contemplated and therefore within the scope of this disclosure that the preparation of films comprised of at least one layer of hafnium oxide and one layer of tantalum oxide in contact with one another may be formed from any suitable starting materials using any fabrication or deposition technique known in the art of film deposition. A preferred method for preparation of corrosion resistant dielectric laminate films is atomic layer deposition, especially when the corrosion resistant film must be applied over surfaces of fluid transport features in the form of complex geometries. Complex geometries include those geometries with re-entrant features as well as other features that may not be directly visible to line-of-sight fluxes of vapor species emitting from vapor sources used in film deposition processes and coating processes.
In a preferred embodiment, shown in
While not wishing to be tied to a particular understanding of the physics and material science involved, it is thought that fluid transport through material layers can occur at defects such as grain boundaries. Grain boundary or other mesoscopic defects become prevalent in layers that crystallize, and the refractory oxides of the present invention are prone to crystallize when the layer thickness exceeds approximately 10 nm. The different refractory oxide layers are each individually resistant to corrosive etching; however, grain boundaries in the material layers form sites like pinholes that can act as conduits for fluid transport. It is thought that the improved reliability of thermal actuators observed when laminate films of hafnium oxide (or zirconium oxide) and tantalum oxide are coated on the printhead is a result of the lower density of mesoscopic defects or pinholes that are present in the laminate film. The lower defect density is attributed to the fact that the individual layers of hafnium oxide and tantalum oxide are so thin that they do not crystallize. It is further thought that by alternating layers of the hafnium oxide with layers of tantalum oxide, the difference in atomic arrangement for the two materials further inhibit the crystallization of each, and therefore the total number of fluid conducting regions is minimized in the laminate. It is also thought that if there are any remaining fluid conducting regions formed in the individual material layers, the chances of them aligning on top of each other is small, thereby providing a tortuous path for fluid diffusion so that fluid transport from one layer to another is unlikely which results in improved reliability of the thermal actuator with respect to corrosion and chemical dissolution processes.
In another preferred embodiment of the invention, shown in
Adhesion promoting layers need not be continuous films, coatings or layers and may be preferentially located and/or spatially localized in preferred regions so as to best enable and enhance the adhesion between the material layer which is also called a substrate and the overlaying non-adhesion promoting film, layer, or coating. Films that are spatially localized, non-uniform over a surface area, or preferentially located on a substrate are also known as patterned films. Patterned adhesion promoting films may, therefore, be fabricated by any method known in the art in order to improve and promote adhesion during use of said adhesion promoting films.
In a preferred embodiment, an adhesion promoting layer is comprised of essentially silicon oxide, having a thickness of at least 0.2 nm. The silicon oxide layer allows surface hydroxl groups to be present during the initial stages of film formation, which is particularly advantageous for atomic layer deposition film forming processes, thereby producing covalent bonding of the corrosion resistant film to the surface. Other adhesion promoting films are well known in the art, including polymer films, self-assembled monolayers of silicon containing silane based adhesion promoting agents or other adhesion promoting agents or molecules, vapor priming films that are well known in the art of semiconductor fabrication methods, including hexamethyldisiloxane based adhesion promoting films, metal and metal oxide adhesion promoting films, and molecular based adhesion promoting films.
Both activated and unactivated adhesion promoting films may be applied to enable adhesion of the laminate coating to the material layer of the microfluidic device. Activated adhesion promoting materials improve their adhesion upon exposure to a secondary stimulus that may be chemical or physical. Such adhesion promoting films may be chemically activated, photochemically activated, thermally activated, pressure activated, plasma activated, or activated by chemical conversion processes well known in the art of chemical conversion coatings for adhesion promotion or activated to promote adhesion by any other means known in the art including plasma treatment of any type, ion bombardment, electron bombardment, or exposure to other actinic radiation. It is specifically contemplated and therefore within the scope of this disclosure that patterned and unpatterned adhesion promoting layers comprised of organic, inorganic, or a combination of inorganic and organic materials that are sometimes called composite adhesion promoting materials may be formed from any suitable starting materials using any fabrication or deposition technique known in the art of formulation and deposition of adhesion promoting films and layers.
In further embodiments of the invention, a wear and abrasion resistant layer, coating, or film may be further provided over the microfluidic device. In a particular embodiment, e.g., a wear and abrasion resistant layer may be provided in contact with a printhead on at least one surface of the printhead, said printhead comprising a material layer, a drop forming mechanism, a liquid chamber, a nozzle and nozzle bore, an optional adhesion promoting layer, and a corrosion resistant laminate coating, film, or layer, said corrosion resistant laminate film comprised of at least one thin film layer of hafnium oxide or zirconium oxide and at least one thin film layer of tantalum oxide. The wear resistant and abrasion resistant layer is preferably overlaying and in contact with the corrosion resistant coating that overlays the printhead to provide protection of the printhead, nozzle plate, nozzles, drop forming mechanism, and additionally any integrated circuits or electronics present on the printhead, nozzle plate and drop forming mechanism.
The wear resistant and abrasion resistant layer, film, or coating may be comprised of any material known in the art to provide protection against wear and abrasion on printheads. Wear and abrasion resistant materials typically fall into two different categories: 1) hard materials with a shear modulus greater than at least one element of the printhead itself, said element being selected from the material layer, drop forming mechanism, or integrated circuits present in or on the material layer or 2) tough, energy absorbing materials whose elastic modulus is substantially greater than that of at least one element of the printhead, said element being selected from the material layer, the drop forming mechanism, or integrated circuits. Typically, hard materials whose shear modulus is greater than at least one element on the printhead are preferred for use in wear and abrasion resistant coating, layers, and films. In practice, scratch resistance measurements, such as measurement of the load at which a stylus dragged along the coating surface begins to produce mechanical damage and flaking of the coating, film, or layer, are suitable for the characterization of wear and abrasion resistant layers. Wear and abrasion resistant layers may be formed from dielectric materials, such as silicon nitride, or silicon doped diamond-like carbon (Si-DLC) having a thickness ranging from about 100 to about 600 nm thick. Wear and abrasion resistant layers may also be formed from non-dielectric materials such as plasma deposited titanium nitride, zirconium nitride, or metallic carbides.
Wear and abrasion resistant layers may contain organic or inorganic compounds. Compounds such as polymers or stacked molecular assemblies can be advantageous for wear and abrasion resistance. Polymers and/or resins can be organic, inorganic, or a combination of both. Wear and abrasion resistant polymers and resins include simple aliphatic polymers such as polybutylenes, polyethylenes; polypropylenes and the like; polymers and resins derived from vinyl based monomers; polystyrenes; polyesters; polyurethanes; polyimides; epoxies; polyamide resins; polyether ether ketone polymers and other thermoplastic based polymers; cellulosic polymers; amino resins; acrylic resins; polycarbonates; liquid crystalline polymers and the like; fluorocarbon based polymers an example of which is VITON; silicone based polymers containing any type of polysiloxane polymeric chain; fiber glass composites; acetal resins; phenolic resins; polymers modified with filler compounds such as glass particles or nanoscale particle additives such as carbon nanotubes; and the like.
Wear and abrasion resistant layers can also be comprised of laminates such as the highly wear resistant coatings based on sputtered zirconium oxide-aluminum oxide laminates described by Aita. A preferred wear and abrasion resistant layer is comprised essentially of carbon, silicon, and hydrogen with the stoichiometry SixCy:fH where 2>x≧y and 2≧(x/y)≧1 and (x+y)>f. Another preferred abrasion and wear resistant coating is comprised of essentially of silicon, carbon and nitrogen having stoichiometry SixCyNz:fH and x+y+z=1, x>(y+z), 0.6>y>0.1, 0.6>z>0.05 and (x+y+z)>f. An additional preferred wear and abrasion resistant layer is silicon doped diamond-like carbon (Si-DLC). It is specifically contemplated and therefore within the scope of this disclosure that wear and abrasion resistant layers comprised of organic, inorganic, or a combination of inorganic and organic materials that are sometimes called composite wear and abrasion resistant promoting materials may be formed from any suitable starting materials using any fabrication or deposition technique known in the art of formulation and deposition of wear and abrasion resistant films and layers.
Although it is not shown in
In the illustration in
Silicon wafers were coated with 300 nm of aluminum or aluminum-copper alloy. The metalized wafers were then coated with 200 nm of silicon oxide prepared by chemical vapor deposition from tetraethylorthosilane. The silicon oxide was deposited on top of the aluminum or aluminum-copper alloy. These silicon wafers were used as silicon wafer substrates for evaluation of the corrosion resistance and mechanical properties of various films, including laminate films. In examples 1A-1F and example 2 the 200 nm of silicon oxide layer on the substrate wafers is an adhesion promoting layer that enables corrosion resistant surface coatings and films to adhere well to the wafer substrate. The outermost layer of the wafer substrates in examples 1A-1F and example 2, comprised of a SiO2 adhesion promoting layer, was then coated with a corrosion resistant film. Various types of corrosion resistant films that were evaluated are given in examples 1A through 1F. In examples 1A-1F and example 2, test coupons of the substrates and films were cut from the wafers. The corrosion resistance of films in examples 1A-1F was evaluated through exposure of the test coupons of the films to hot caustic test solution (pH 11.8 at 80° C.) for a set period of time (48 hrs) followed by optical counting of the total number of corrosion attack sites on the sample. Mechanical properties of the films in example 2 were evaluated by determining the load at which mechanical failure of the film appearance when scratched with a stylus. All methods used for film evaluation are known to those skilled in the art. Films in example 1A-1F and example 2 were prepared by either chemical vapor deposition methods like those described by Bau et al (S. Bau, S. Janz, T. Kieliba, C. Schetter, S. Reber, and F. Lutz; WCPEC3-conference, Osaka, May 11-18 (2003); “Application of PECVD-SiC as Intermediate Layer in Crystalline Silicon Thin-Film Solar Cells”) or atomic layer deposition methods like those described by Liu et al (X. Lui, S. Ramanathan, A. Longdergan, A. Srivastava, E. Lee, T. E. Seidel, J. T. Barton, D. Pang, and R. G. Gordon; J. Electrochemical Soc, 152(3) G213-G219, (2005); “ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone”) and these preparative methods are well known to those skilled in the art of semiconductor fabrication.
This example demonstrates the use of an adhesion promoting layer in combination with an improved corrosion resistant laminate film comprised of multiple layers each consisting essentially of HfO2 or Ta2O5, and demonstrates at least one preferred composition of a corrosion resistant laminate as described in the invention. This example also demonstrates that the relative thickness, order and number of the refractory oxide layers in the invention is important with regard to achieving optimal results, and that the observed improved corrosion resistance of the laminate films, and in particular of hafnium oxide rich HfO2—Ta2O5 laminate films, is novel and could not have been predicted.
In examples 1A-1F the 200 nm of silicon oxide layer of the silicon wafer substrate described above is an adhesion promoting layer that enables corrosion resistant surface coatings and films that are deposited on top of the silicon wafer to adhere well to the wafer substrate. The outermost layer of the wafer substrates in examples 1A-1F, comprised of a SiO2 adhesion promoting layer, was then coated with a corrosion resistant film. Various types of corrosion resistant films were deposited for evaluation and the various films are given in examples 1A through 1F. Films in examples 1A-1F were deposited by atomic layer deposition methods using the methods described by Liu et al (X. Lui, S. Ramanathan, A. Longdergan, A. Srivastava, E. Lee, T. E. Seidel, J. T. Barton, D. Pang, and R. G. Gordon; J. Electrochemical Soc, 152(3) G213-G219, (2005); “ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone”) that are well known to those skilled in the art of semiconductor fabrication. Test coupons of the substrates and films were cut from the wafers. The corrosion resistance of films was evaluated through exposure of the surface of the test coupons of the films to hot caustic test solution (pH11.8 at 80° C.) for a set period of time (48 hrs) followed by optical counting of the total number of corrosion attack sites on the coupon sample.
Table 1 shows the relative corrosion resistance of several corrosion resistant films that were evaluated.
Comparison of example 1A and 1F with examples 1B-1E demonstrates that multilayered coatings and films (laminate films) of HfO2 and Ta2O5 show a lower defect density after testing than single layer films of either HfO2 or Ta2O5 of equivalent total thickness. Table 1 shows that laminate films exhibit significantly fewer corrosion attack sites per square mm than either films comprised of the binary oxide alone, thus demonstrating that the laminate films described in Table 1 are significantly more corrosion resistant than either HfO2 or Ta2O5 films alone. Comparison of example 1C with example 1D and additional comparison of example 1B with example 1E demonstrates that the order and identity of the layers in a multilayer film comprised essentially of HfO2 and Ta2O5 is important in determining the corrosion resistant performance of the laminate films. While improved corrosion resistance is demonstrated for the laminate films of each of Examples 1B through 1E relative to either HfO2 or Ta2O5 films alone, further improved corrosion resistant is found when the thickness of the hafnium oxide layer is greater than the thickness of the tantalum oxide layer. Examples 1D and 1E in Table 1, where the layer thickness of HfO2 is less than the layer thickness of Ta2O5, demonstrate that for certain types of laminate structures the number of layers in the laminate structure does not strongly influence the corrosion resistance of this particular type laminate structure. In contrast to this, examples 1B and 1C clearly show that increasing the total number of layers in the laminate structures where the layer thickness of HfO2 is greater than the layer thickness of Ta2O5 increases the corrosion resistance of the overall laminate film. The behavioral contrast between the examples in Table 1 and specifically between the pairs of examples (1D, 1E) and (1B, 1C) demonstrates that the improved corrosion resistance of the hafnium rich HfO2—Ta2O5 laminate films in accordance with a preferred embodiment of the invention could not have been predicted.
X-ray diffraction studies of the examples 1A through 1E for phase identification of crystalline oxides showed that only example 1A was crystalline. Example 1A contained crystalline HfO2. Examples 1B through 1E did not show any evidence of crystalline oxide phases by x-ray diffraction. Temperature dependent x-ray diffraction studies of samples 1B through 1E showed that no significant structural changes were observed by x-ray diffraction at temperatures up to 350° C. thereby demonstrating that the HfO2 and Ta2O5 containing chemically resistant and corrosion resistant laminate films are thermally stable also.
This example demonstrates the use a wear and abrasion resistant coating on a chemically resistant, corrosion resistant laminate film as described in an embodiment of the invention.
Two silicon wafers with multilayer corrosion resistant films identical to example 1C were fabricated and one of the wafers was overcoated with 400 nm of an abrasion resistant coating containing silicon, nitrogen, and carbon at 320° C. The overcoat film containing silicon, nitrogen and carbon was prepared by chemical vapor deposition methods like those described by Bau et al (S. Bau, S. Janz, T. Kieliba, C. Schetter, S. Reber, and F. Lutz; WCPEC3-conference, Osaka, May 11-18 (2003); “Application of PECVD-SiC as Intermediate Layer in Crystalline Silicon Thin-Film Solar Cells”). The 200 nm of silicon oxide layer on the silicon wafer substrate is an adhesion promoting layer that is at least 0.2 nm in thickness and enables corrosion resistant surface coatings and films that are deposited on top of the silicon wafer to adhere well to the wafer substrate. The wear and abrasion resistant coating containing silicon, carbon and nitrogen overlays and is in contact with the chemically resistant and corrosion resistant coating, including a layer essentially of hafnium oxide and a layer essentially of tantalum oxide. Test coupons of the substrates and films were cut from the wafers. X-ray diffraction studies of the sample did not show evidence of any crystalline oxide films being present in the samples. Mechanical properties of the films on coupon samples were evaluated by determining the load at which mechanical failure of the film appeared when scratched with a stylus. The 400 nm thick wear and abrasion resistant coating was determined to be either poorly crystalline or amorphous by x-ray power diffraction and was analyzed for silicon, carbon, and nitrogen by x-ray photoelectron spectroscopy (XPS). The coating had 40 atomic percent (At %) carbon, 16 At % nitrogen, 6.5 At % oxygen, and 37.5 At % silicon. Hydrogen was not detectable in the coating by XPS. The load to failure as determined by the observation of mechanical flaking of the sample surface was determined using a 10 micron diamond stylus. The wafer, which was overcoated with the 400 nm thick coating containing 37.5 atomic % Si, 40 atomic % carbon, 16 At % nitrogen, and 6.5 At % oxygen, failed at approximately twice the load of the non-overcoated sample that was identical to example 1C. This example demonstrates that 400 nm thick coating containing 37.5 atomic % Si, 40 atomic % carbon, 16 At % nitrogen, and 6.5 At % oxygen is an abrasion and wear resistant coating that can be used to protect an underlying chemically resistant laminate film comprised of thin film layers of HfO2 and Ta2O5.
This example demonstrates the use of an adhesion promoting layer in combination with a corrosion resistant laminate films comprised of multiple layers each consisting essentially of ZrO2 or Ta2O5. This example also demonstrates corrosion resistant laminate films where a thin film layer of ZrO2 is substituted for HfO2 in the laminate and where HfO2 and ZrO2 are both present as thin films in a laminate structure along with Ta2O5. In addition, this example demonstrates at least one additional preferred composition of a corrosion resistant laminate as described in the invention.
The outermost layer of the wafer substrates in examples 3A-3E, comprised of a SiO2 adhesion promoting layer, was then coated with a corrosion resistant film. Various types of corrosion resistant films were deposited for evaluation and the various films are given in examples 3A through 3E. Films in examples 3A-3E were deposited by atomic layer deposition methods using the methods described by Liu et al (X. Lui, S. Ramanathan, A. Longdergan, A. Srivastava, E. Lee, T. E. Seidel, J. T. Barton, D. Pang, and R. G. Gordon; J. Electrochemicial Soc, 152(3) G213-G219, (2005); “ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone”) that are well known to those skilled in the art of semiconductor fabrication. Test coupons of the substrates and films were cut from the wafers. The corrosion resistance of films was evaluated through exposure of the test coupons of the films to hot caustic test solution (pH11.8 at 80° C.) for a set period of time (48 hrs) followed by optical counting of the total number of corrosion attack sites on the coupon sample.
Table 2 shows the relative corrosion resistance of several corrosion resistant films that were evaluated according to method described above for examples 1A-1F. The films were deposited on the silicon wafer substrates described above as the outermost layer and were exposed directly to the caustic test solution during evaluation.
Examples 3A and 3C were replicate examples that are identical with examples 1B and 1C. Examples 3B and 3D in Table 2 similarly demonstrate the corrosion resistance of a dielectric film comprised of multiple alternating layers of zirconium oxide and tantalum oxide that contact each other. Example 3E demonstrates that substitution of HfO2 for ZrO2 in the ZrO2—Ta2O5 corrosion resistant dielectric laminate film is permissible, while still maintaining the corrosion resistance of the laminate film, with 50% mole substitution of HfO2 for ZrO2 being shown in example 3E. As Example 3E demonstrates intermediate performance between that of Example 3C and Example 3D, it is anticipated that the level of substitution of HfO2 for ZrO2 may be anywhere between 0.1 mole % and 99.9 mole % HfO2 in the ZrO2—Ta2O5 corrosion resistant dielectric laminate film, with similar intermediate results being expected. Alternately, a level of substitution anywhere between 0.1 mole % and 99.9 mole % of ZrO2 may be substituted for HfO2 in the HfO2— Ta2O5 corrosion resistant dielectric laminate film while still maintaining the corrosion resistance of the laminate film. Example 3E therefore demonstrates that corrosion resistant laminate films can be prepared in the HfO2—ZrO2—Ta2O5 system when the level of substitution of zirconium oxide for hafnium oxide in the laminate film is between 0.1 mole % and 99.9 mole %. X-ray diffraction studies of these films gave no evidence for the presence of crystalline oxide phases in the films. Temperature dependent x-ray diffraction studies of samples 3A through 3E showed that the zirconium oxide containing films (examples 3B, 3D, and 3E) crystallized at 300° C. Example 3A and 3C did not show any evidence of crystallization at 350° C. indicating that HfO2 and Ta2O5 containing chemically resistant and corrosion resistant laminate films have a larger range of thermal stability with respect to crystallization.
This example demonstrates improved life of a printhead comprised of an integrated array of microfluidic devices comprising a material layer; fluid transport features having characteristic dimensions of less than 500 micrometers formed in or on the material layer; and a multilayer coating including a thin film layer consisting essentially of hafnium oxide and a thin film layer consisting essentially of tantalum oxide, the multilayer coating being located on a surface of the fluid transport features.
Three identical CMOS/MEMS integrated inkjet printheads of the type described by Aganostopoulos et al. U.S. Pat. No. 6,502,925 (Jan. 7, 2003) comprising a silicon substrate and silicon-based material layers thereon, with ink channels formed in the substrate and a drop forming mechanism and nozzle opening or bores formed in the material layers, were fabricated. The nozzle openings had a diameter of about 10 micrometers and nozzle bore length of about 5 micrometers, and the ink channels had a length (depth) of about 350 micrometers and an elliptical cross section with a main axis of about 120 micrometers and a minor axis of about 30 micrometers, thus forming microfluidic fluid transport features in the silicon substrate and silicon-based material layers thereon. One of the printheads (inventive Example 4a) was first overcoated with a corrosion resistant laminate film having the same composition as that of example 1C according to the atomic layer deposition methods described in Examples 1 and 3 above, such that surfaces of the material layer, including internal surfaces of the fluid transport features formed in the material layer, are conformally coated with the chemically resistant laminate film. After the corrosion resistant laminate film was applied, a wear and abrasion resistant film was applied to the external surfaces of the printhead according to the method described in Example 2 above by overcoating and overlaying the chemically resistant laminate film with 400 nm thick layer containing silicon, nitrogen, and carbon, identical to the wear and abrasion resistant coating described in Example 2. The overcoated layer or film containing silicon, nitrogen and carbon was prepared by chemical vapor deposition methods like those described by Bau et al (S. Bau, S. Janz, T. Kieliba, C. Schetter, S. Reber, and F. Lutz; WCPEC3-conference, Osaka, May 11-18 (2003); “Application of PECVD-SiC as Intermediate Layer in Crystalline Silicon Thin-Film Solar Cells”). A second of the printheads (comparison Example 4b) was overcoated with only the 400 nm thick wear and abrasion resistant film (i.e., without first coating a chemically resistant laminate film according to the invention). The third printhead (comparison Example 3c) was not overcoated with either of the chemically resistant laminate film or the wear and abrasion resistant film.
Each of the printheads of Examples 4a-4c were tested under accelerated test conditions. The thermal actuators of the printhead were driven at 480 kHz. The voltage applied to the thermal actuators in the drop forming mechanism was 8V and the dissipated energy in a single heater for a single heater actuation was 26 nanojoules. The test fluid employed, provided at room temperature, contained typical components normally found in fluids formulated for continuous inkjet applications such as Kodak PROSPER inkjet inks (acrylate polymer dispersants, glycerol, polypropylene glycol, triethylene glycol, surfactants, biocide, and anticorrosion agents) at typical concentrations, but had a relatively high concentration of alkali metal cations (K+ concentration approximately 0.2% by weight) for accelerated testing purposes. The test fluid was applied to the print head at 60 psig and reclaimed for reuse after jetting through the print head. After establishing stable jets in each nozzle of the nozzle array of the print head, a 512 nozzle portion of the larger array of heaters was actuated and run continuously until failure. Failure of heaters was detected by monitoring changes in the current drawn by the print head during operation as a function of time.
It was found during testing that although there was no significant difference in the heater life performance of the printheads of comparison Examples 4b and 4c that were prepared with and without the wear and abrasion resistant coating, the printhead of Example 4a including a corrosion resistant laminate coating comprised of at least one thin film layer of HfO2 and at least one thin film layer of Ta2O5 according to the invention and a wear and abrasion resistant layer showed significantly superior heater life performance when compared with the control printheads of Examples 4b and 4c where the chemically resistant coating was absent. The control printheads of Examples 4b and 4c (with and without the wear and abrasion resistant layer, but in both examples without the corrosion resistant coating) operated 45±15 hours before failure of the thermal actuators in the drop forming mechanism of the printhead, whilst the printhead of Example 4a with both the corrosion resistant coating and the wear resistant coating operated over 200 hours before failure of the thermal actuators in the drop forming mechanism of the printhead during testing—an improvement of greater than a factor of four in the lifetime of the thermal actuators in the drop forming mechanism of the printhead.
The invention has been described in detail with particular reference to certain preferred embodiments thereof, but it will be understood that variations and modifications can be effected within the spirit and scope of the invention.
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| Number | Date | Country | |
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| 20130065017 A1 | Mar 2013 | US |
