MICROSCALE HIGH-FREQUENCY VACUUM ELECTRICAL DEVICE

Abstract

A microscale vacuum electronic device (10) provides for a mechanical modulation of cathode (12) position allowing improved high-frequency modulation of an electron beam (24) useful for vacuum electronic devices such as klystrons, klystrodes, and high frequency triodes.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side elevational view of a klystrode constructed according to the principles of the present invention, showing a cathode configured for mechanical movement with respect to a grid to provide a traveling wave directed toward an anode;

FIG. 2 is a simplified diagram of the cathode and anode showing one resonant motion of the cathode when excited by a piezoelectric actuator;

FIG. 3 is a fragmentary perspective view of the surface of the cathode facing the grid showing fabrication of a plurality of nanoscale pillars on that surface;

FIG. 4 is an exaggerated cross-sectional fragmentary view of the grid and cathode of FIGS. 1 and 3, showing resonant motion of the pillars with movement of the cathode and their changing alignment with regularly spaced apertures within the grid;

FIG. 5 is a spectrum showing an operating frequency of a mechanical actuator and harmonics thereof which may drive ones of the cathode and the pillars at yet higher frequencies; and

FIG. 6 is an elevational cross section of the device of FIG. 1 implemented using integrated circuit techniques.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Referring now to FIG. 1, one embodiment of the invention may provide a klystrode 10 having a conductive cathode 12 opposed with one or more conductive anodes 16, defining between them a “drift space” 14, all held within an evacuated housing 20. The cathode 12 may be biased with respect to the anodes 16 by a DC bias source 22 as is understood in the art. Under the influence of the bias source 22, electrons are emitted from the cathode 12 and drawn in an electron beam 24 along a z-axis into the drift space 14.

The surface of the cathode may be of a type, as will be described below, to promote non-thermionic, low-temperature emission of electrons (field emissions) to provide for “cold cathode” operation. The cold operation of the cathode 12 allows it to be placed close to a grid 26, positioned between the cathode 12 and anode 16 so that electrons of the electron beam 24 must pass through apertures 28 in the grid before reaching the drift space 14.

In one possible operating mode, an RF modulating source 30 may be applied to the conductive grid 26, either capacitively or inductively, to both directly affect the emission of electrons from the cathode 12 and to promote a velocity difference in those electrons as they form the electron beam 24. The resulting modulated electron beam 24 is accelerated through the drift space 14 past an output cavity 32 positioned along the path of the electron beam 24. The output cavity 32 is tuned to a modulation frequency of the electron beam 24 to extract amplified radio frequency energy from the electron beam 24 through output waveguide 34 according to techniques well understood in the art. A portion of the signal on the waveguide 34 may be fed back to drive the grid 26 to produce an oscillator or may be appropriately divided in frequency and used to drive the mechanical resonance.

As is understood in the art, modulation of the grid 26, by RF modulating source 30 alters the velocity of the electrons emitted from the cathode 12 so that there is a bunching of electrons as the electrons move through drift space 14. The bunching is shown by superimposed plot 27. The modulation voltage on the grid 26 may also affect the emission of electrons from the cathode 12 causing a current modulation. Electron energy recovered from the cavity 32 is thus amplified both by changes in kinetic energy and changes in current flow.

Referring now to FIGS. 1 and 3, in the present invention, the cathode 12 includes a substrate membrane 36 extending generally along an x-y plane orthogonal to the z-axis along which the electron beam 24 travels. The membrane 36 may be supported, for example, at its edges by a collar 38 attached to a piezoelectric actuator 40 parallel to the membrane 36 on the opposite side of the membrane 36 with respect to the anodes 16 and driven by a modulation source 42.

The modulation source 42 causes z-axis motion of the membrane 36 at ultrasonic frequencies of 50 kilohertz and above and frequencies up to 10 GHz. The effect of this actuation is to change the spacing between the cathode 12 and the grid 26, thereby modulating the effect of the electrical field of the grid 26 on the cathode 12 and thus changing the velocity of the electrons emitted therefrom and to some extent the emissions from the cathode 12.

Referring now to FIG. 2, the membrane 36 as supported at its edges by collar 38 for movement along the z-axis may exhibit resonant behavior defined by its geometry, stiffness and distributed mass. As shown in FIG. 2, this resonant motion changes the spacing of the cathode 12 to the grid 26 from a minimum value of 39 to a maximum value 39′ that may exceed the actual motion of the actuator 40. Further, and referring momentarily to FIG. 5, this resonant behavior allows, for example, the actuator to operate at a first frequency f₀ and for motion of the membrane 36 to follow a harmonic f₂ and thus to modulate the electron beam at frequencies much exceeding those obtainable by the actuator 40.

Referring now to FIGS. 3 and 4, the surface of the membrane 36 facing the grid 26 may be populated with a set of pillars 50 extending outward from the surface of the membrane 36, along the z-axis. The pillars 50 are nanostructures having, for example, diameters less than 1000 nanometers and typically less than tens of nanometers at their tips, and heights many times their diameters. The small size of the tips of the pillars 50 produce field emissions that differ from those predicted by the classical Fowler-Nordheim model, as described in D. V. Scheible et al., Physical Review Letters vol. 93, 186801 (2004) hereby incorporated by reference.

The membrane 36 and pillars 50 may be fabricated using integrated circuit techniques (e.g. lithography) or growth of nanostructures, for example carbon nanotubes, at catalysts deposited on the membrane 36 at regular locations. Two techniques for fabrication are described in U.S. Pat. Nos. 6,946,693 and 6,858,521 hereby incorporated by reference. A high emissivity capping material 52 may be placed at the tips of the pillars 50, for example, gold, diamond, or semiconductor materials, to improve their emission qualities.

Referring now to FIG. 4, the pillars 50 may be located to align axially (at rest) with corresponding apertures 28 in the grid 26 so that the grid 26 may pass electrons from the tips of the pillars 50 through the apertures without striking the grid 26 and providing unnecessary heating of the grid 26. Control of the grid voltage, may nevertheless be used to control the velocity and/or current of the electron beam 24.

Referring still to FIG. 4, like the membrane 36, the pillars 50 may exhibit their own resonant behavior, vibrating in one or more modes along the x-y plane, for example between locations 54. Referring again to FIG. 5, the smaller size of the pillars 50 allow them to resonate at a higher harmonic, for example, f₄ of the actuator frequency f₀, so that frequencies in excess of 100 megahertz and as much as several terahertz may be obtained.

The motion of the pillars 50 changes their alignment with respect to the apertures 28 in the grid 26 and the relative field strength of the grid field on their tips. This change in field strength also modulates the electron velocity and/or current from the pillars 50 and thus the motion of the tips of the pillars 50 with respect to the apertures provides additional modulation or the principal modulation of the electron beam.

Referring now to FIG. 6, the present device is well adapted to fabrication using integrated circuit techniques. In such an integrated device, the cathode 12 may be fabricated of a doped semiconductor substrate with pillars 50 formed by lithographic techniques and the actuator 40 bonded to the bottom surface of the substrate. An insulating spacer layer 62 may be bonded to the upper surface of the substrate of the cathode 12 and used to space a grid 26 from the cathode 12, the latter which may be etched to form apertures 28 aligned with the pillars 50 and then metallized or doped to provide conductivity. A second spacer layer 60 may then be used to create the drift space 14 and to support a conductive anode 16. A cavity 32 etched in the spacer layer 60 provides an output for the klystrode 10.

In an alternative embodiment, the pillars 50 may incorporate multiple quantum wells, for example, by layering materials along the axis of the pillars 50, to produce a quantum resonant tunneling device in which extremely low field emissions occur at non-resonant voltages and large field emissions occur at resonant voltages. These selective emissions characteristics could enable ultra low noise field emission currents by setting the DC electric field between the tips of the pillars 50 and grid 26 (when the pillars 50 are at rest) just below a resonant voltage thereby producing a very low “dark” current. Ultrasonic excitation would then move the tips of the pillar 50 into a field that provides a resonant voltage allowing precisely modulated field emissions with low noise.

Another possibility is that of using phonon or photon assisted tunneling (PAT) through the quantum wells of the pillars 50 as controlled by a coupled piezoelectric actuator 40 or a stimulating light source. This mechanism as detected in quantum dots is described in H. Qin et al., Physical Review B vol. 64, R241302 (2001) hereby incorporated by reference.

An individual piezoelectric actuator 40 could be associated with each pillar 50 or each small group of pillars 50 in order to provide individual control of the field emissions of the pillars or groups, for example, to realize uniform field emission across the cathode area. In one embodiment the pillars 50 may be placed on top of a piezoelectric substrate such as quartz or the piezoelectric substrate may be etched or formed directly to produce the pillars 50.

It will be understood that these techniques may be used with other traveling wave type tubes such as klystrons and, in fact, with other vacuum tube-type devices such as triodes in which directed mechanical modulation may be practical for nanoscale-sized structures. In the klystrode and triode, the grid may be held at a constant voltage or modulated to augment the mechanical modulation of the cathode. Clearly in these devices, the grids could also be mechanically modulated or another field generating structure could be modulated including the anode. Modulation of the pillars may be used alone and promoted by an actuator connection providing movement not in the z-axis but in the x or y-axis.

It is specifically intended that the present invention not be limited to the embodiments and illustrations contained herein, but include modified forms of those embodiments including portions of the embodiments and combinations of elements of different embodiments as come within the scope of the following claims.

Claims

1. A microscale high-frequency vacuum electrical device (10) comprising: an evacuated housing (20);a cathode (12) held within the housing;an anode (16) held within the housing to be electrically biased with respect to the cathode to attract an electron beam (24) from the cathode; andan actuator (40) receiving a first signal to modulate a relative position of the cathode at a frequency greater than 100 kHz to modulate the electron beam.

2. The high-frequency vacuum electrical device of claim 1 further including a grid (26) held within the housing between the cathode and anode to be electrically biased to control flow of electrons between the cathode and anode; and wherein the cathode's position is modulated with respect to the grid.

3. The high-frequency vacuum electrical device of claim 1 wherein the actuator is a piezoelectric device.

4. The high-frequency vacuum electrical device of claim 1 wherein the actuator receives an electrical modulation signal (42).

5. The high-frequency vacuum electrical device of claim 1 wherein the actuator moves the cathode.

6. The high-frequency vacuum electrical device of claim 1 wherein the modulation of the electron beam is at a harmonic of a frequency of the first signal.

7. The high-frequency vacuum electrical device of claim 1 wherein the cathode further includes a substrate (36) supporting an array of field emitting pillars (50) extending along the electron beam.

8. The high-frequency vacuum electrical device of claim 7 wherein the grid includes apertures (28) aligned with the pillars whereby movement of pillar tips with respect to the apertures provides modulation of the electron beam.

9. The high-frequency vacuum electrical device of claim 8 wherein the pillar tips move in flexure with respect to the apertures.

10. The high-frequency vacuum electrical device of claim 7 wherein the modulation of the electron beam by the pillars is at a harmonic of a frequency of movement of the substrate.

11. The high-frequency vacuum electrical device of claim 7 wherein the cathode and pillars are formed from a doped semiconductor.

12. A microscale high-frequency vacuum electrical device (10) comprising: an evacuated housing (20);a cathode (12) held within the housing;an anode (16) held within the housing to be electrically biased with respect to the cathode to attract an electron beam (24) from the cathode; wherein the cathode further includes a substrate holding an array of field emitting pillars extending substantially toward the anode; andan actuator (40) receiving a first signal to move the pillars a frequency greater than 100 kHz to modulate the electron beam received by the anode.

13. The high-frequency vacuum electrical device of claim 12 wherein the modulation of the electron beam by the pillars is at a harmonic of a frequency of movement of the substrate.

14. The high-frequency vacuum electrical device of claim 12 wherein the cathode and pillars are formed from a doped semiconductor.

15. The high-frequency vacuum electrical device of claim 12 wherein tips of the pillars are coated with a material (52) increasing the electron emissions of the pillars.

16. The high-frequency vacuum electrical device of claim 12 wherein the pillars have a width of less than 1000 nanometers.

17. The high-frequency vacuum electrical device of claim 12 further including a grid (26) held within the housing between the cathode and anode to be electrically biased to control flow of electrons between the cathode and anode.

18. The high-frequency vacuum electrical device of claim 17 wherein the grid includes apertures (28) aligned with the pillars whereby movement of pillar tips with respect to the apertures provides modulation of the electron beam.

19. The high-frequency vacuum electrical device of claim 18 wherein the pillar tips move in flexure with respect to the apertures.

20. The high-frequency vacuum electrical device of claim 18 wherein the pillar tips are coated with a high emissivity material (52).