The invention is directed to the coupling of pulsed laser radiation into a microscope, especially a microscope used for the quality control and classification of defects of masks for the manufacture of semiconductors.
In accordance with the invention, a microscope, especially for use during inspection in semiconductor manufacture comprising a pulsed laser for illumination, the laser being preferably in the UV range. The microscope includes at least one rotating diffusion disk which is arranged behind the laser for the homogenization of the illumination
In the drawings:
a shows a diagram of a coupling unit for coupling the laser beam into the microscope; and
b is an additional view showing the coupling of the laser beam into the microscope.
Advantageously, a number of laser pulses are applied to the object to be examined while one image is taken. During this, intensity modulations of the laser profile of up to 40% can occur within one pulse or over a small number of pulses, which affects the evaluation.
a and 2b show a coupling unit UP for coupling the laser beam into the microscope MI.
The laser light reaches a first rotating diffusion disk S1 via reflecting mirrors U1, U2 and then a second rotating diffusion disk S2 preferable rotating in the opposite direction as well as the microscope ray path (not shown) via a lens (L) for beam expansion and an aperture B and the input E in
The laser profile is smoothed out by means of the at least one diffusion disk. As illustrated in
The diffusion disk rotates at a speed which is relatively low when compared to the spacing of two laser pulses.
This means that the diffusion disk is practically not moving for the duration of a laser pulse of, for example, 10 ns, but also that it moves a bit further in the space of time between two laser pulses (for a repeating frequency of, for example, 200 Hz) before the next laser pulse occurs. It should also be noted that in one embodiment of the present invention, the illumination laser wavelength essentially corresponds to an illumination wavelength during the manufacture of semiconductors. In yet another embodiment of the present invention, the illumination wavelength is in the range of 193 nm or 248 nm or 266 nm or 366 nm, all with a tolerance of +/−2 nm.
This has the advantage of averaging out the granularity of the diffusion disk and furthermore that the granularity caused by the coherence of the laser radiation (speckle) is also averaged out.
This means that noise is reduced and an the image contrast is increased and that therefore image quality is improved.
For this, the magnitude of the rotating speed of the diffusion disk can lie in the easily realized range of approximately 1 rotation per second (a speed in the range of cm/s), so that for an assumed grain size of 0.1 mm a displacement by at least the size of one grain takes place between two pulses.
The homogenizing effect is reinforced by a second diffusion disk rotating in the opposite direction.
Besides granulated diffusion disks (made by etching or abrasive blasting), holographic disks can also be used.
CGHs (computer-generated holograms) can also be used for homogenization.
While the foregoing description and drawings represent the present invention, it will be obvious to those skilled in the art that various changes may be made therein without departing from the true spirit and scope of the present invention.
Number | Date | Country | Kind |
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199 46 594 | Sep 1999 | DE | national |
This application is a continuation of U.S. application Ser. No. 09/856,222, filed Aug. 20, 2001, now abandoned which claims priority of International Application No. PCT/EP00/09199, filed Sep. 20, 2000 and German Application No. 199 46 594.0, filed Sep. 29, 1999, the complete disclosures of which are hereby incorporated by reference.
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Number | Date | Country |
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10-078668 | Mar 1998 | JP |
Number | Date | Country | |
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20040246574 A1 | Dec 2004 | US |
Number | Date | Country | |
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Parent | 09856222 | US | |
Child | 10875934 | US |