Claims
- 1. A microstrip line for high frequency applications consisting of a metallic ground electrode, a metallic signal conductor and a dielectric means arranged between the ground electrode and the signal conductor, wherein the dielectric means consists of a relaxed polymer film that is coated on one side with a self-adhesive layer.
- 2. The microstrip line according to claim 1, wherein the dielectric means has a relative permittivity εr of less than 2.5 in the frequency range between 500 MHz and 1 THz.
- 3. The microstrip line according to claim 1, wherein the mean thickness d of the dielectric means lies between 5 μm and 100 μm.
- 4. The microstrip line according to claim 1, wherein the dielectric means shows variations in thickness δd of its mean thickness d, the variations in thickness δd being less than 5% of the mean thickness d.
- 5. The microstrip line according to claim 1, wherein the dielectric means is made from polypropylene.
- 6. The microstrip line according to claim 1, wherein the self-adhesive layer is made from an acrylate copolymer.
- 7. The microstrip line according to claim 1, wherein at least one of the metallic ground electrode and the metallic signal conductor are deposited by one of the following deposition procedures: thermal vaporization, electron-beam evaporation, electrolytic deposition and sputtering.
- 8. The microstrip line according to claim 1, wherein at least one of the metallic ground electrode and the metallic signal conductor consists of a metal film coated with a self-adhesive layer.
- 9. The microstrip line according to claim 1, wherein at least one of the metallic signal conductor and the ground electrode are structured by means of a lithographic technique.
- 10. The microstrip line according to claim 1, wherein the dielectric means has a shape, the shape of the dielectric means being prefabricated according to the shape of the substrate.
- 11. The microstrip line according to claim 1, wherein the microstrip line forms a passive high-frequency component part such as for example a kink in a line, a width graduation in a line, a device to open circuit a line, a device to short circuit a line, a filter or an antenna.
- 12. The microstrip line according to claim 1, wherein the relaxed polymer film is a pre-stretched film.
- 13. The microstrip line according to claim 1, wherein the dielectric means and the self-adhesive layer form a stacked dielectric system having a relative permittivity εr of less than 2.5 in the frequency range between 500 MHz and 1 THz.
- 14. The microstrip line according to claim 1, wherein the dielectric means has a relative permittivity εr of less than 2.5 in the frequency range between 1 GHz and 500 GHz.
- 15. The microstrip line according to claim 1, wherein the dielectric means and the self-adhesive layer form a stacked dielectric system having a relative permittivity εr of less than 2.5 in the frequency range between 1 GHz and 500 GHz.
- 16. The microstrip line according to claim 1, wherein the dielectric means and the self-adhesive layer form a stacked dielectric system having a mean thickness d between 5 μm and 100 μm.
- 17. The microstrip line according to claim 1, wherein the dielectric means and the self-adhesive layer form a stacked dielectric system having a mean thickness d amounting to 50 μm.
- 18. The microstrip line according to claim 1, wherein the dielectric means shows variations in thickness δd of its mean thickness d, the variations in thickness δd being less than 2% of the mean thickness d.
- 19. The microstrip line according to claim 1, wherein the dielectric means shows variations in thickness δd of its mean thickness d, the variations in thickness δd being less than 1% of the mean thickness d.
- 20. The microstrip line according to claim 1, wherein the dielectric means and the self-adhesive layer form a stacked dielectric system, the stacked dielectric system having a mean thickness d and showing variations in thickness δd of its mean thickness d, the variations in thickness δd being less than 5% of the mean thickness.
- 21. The microstrip line according to claim 1, wherein the dielectric means and the self-adhesive layer form a stacked dielectric system, the stacked dielectric system having a mean thickness d and showing variations in thickness δd of its mean thickness d, the variations in thickness δd being less than 2% of the mean thickness.
- 22. The microstrip line according to claim 1, wherein the dielectric means and the self-adhesive layer form a stacked dielectric system, the stacked dielectric system having a mean thickness d and showing variations in thickness δd of its mean thickness d, the variations in thickness δd being less than 1% of the mean thickness.
Priority Claims (2)
Number |
Date |
Country |
Kind |
199 34 657.7 |
Jul 1999 |
DE |
|
199 40 163.2 |
Aug 1999 |
DE |
|
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of PCT/DE00/02283 filed Jul. 13, 2000, and claims the priority of DE 199 34 657.7 filed Jul. 23, 1999 and DE 199 40 163.2 filed Aug. 25, 1999.
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/DE00/02283 |
Jul 2000 |
US |
Child |
10053428 |
Jan 2002 |
US |