Microwave dielectric ceramic composition

Information

  • Patent Grant
  • 5432134
  • Patent Number
    5,432,134
  • Date Filed
    Monday, January 3, 1994
    30 years ago
  • Date Issued
    Tuesday, July 11, 1995
    29 years ago
Abstract
A low loss dielectric ceramic composition is disclosed, which is usable in a microwave filter and global positioning that is superior in quality coefficient (Q) value, temperature characteristics of resonant frequency, and long-term reliability, such as high temperature resistance and humidity resistance. The composition comprises Zr.sub.1-x Sn.sub.x Ti.sub.1+y O.sub.4 as a main group in combination with aZnO+bSb.sub.2 O.sub.3, as sintering-aiding agents, wherein x and y are mole ratios which satisfy the following conditions: 0.1<x<0.3; 0<y<0.5; and a and b indicate weight ratios to the total weight of the main group, satisfied by the following condition: 0<a+b<0.05 wherein neither a nor b is zero.
Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates, in general to a low loss dielectric ceramic composition. The composition is usable for a microwave filter for a global positioning system that is superior in its quality coefficient (Q) value as well as in temperature characteristics of resonant frequency, and in long-term reliability, including high temperature resistance and humidity resistance.
2. Description of the Prior Art
A dielectric filter composition is disclosed in Japanese Patent Publication No. Sho 64-4982 which comprises BaZrSnO. It has a dielectric constant of 37.5 and a Q value of about 6,500. In a view of the dielectric constant and Q value, the dielectric filter composition is useful as a material for a resonator. However since the dielectric filter composition cannot be tightened in its structure, its Q value is lowered and its temperature characteristics become unstable over time at high temperature and high humidity. As a result, the characteristics of the filter deteriorate.
In a paper issued by Shinich Hirano et al. of Japan, a dielectric ceramic composition is reported which shows superior properties, including a dielectric constant of 40, Q value of 5,000, and a resonant frequency temperature coefficient of dielectric constant less than +20 ppm/.degree.C., at 10 GHz. However, the method described requires that fine particles with a diameter of about 0.3 .mu.m be produced in an alkoxide method, and that the baking temperature be 1,600.degree. C. during preparation of the ceramic composition [reference: Shinich Hirano, Takashi Hayashi and Akiyoshi Hattori, "Chemical processing and microwave characteristics of (Zr,Sn)TiO.sub.4 microwave dielectrics." J. Am. Ceram. Soc.; 74 [61]:1320-1324 (1991)].
SUMMARY OF THE INVENTION
An object of this invention is to solve the aforementioned problems and in particular to provide a microwave dielectric ceramic composition for a global positioning system, which is capable of providing a tight structure and is superior in high temperature resistance and humidity resistance.
In accordance with the present invention, the above objects can be accomplished by providing a microwave dielectric ceramic composition, comprising Zr.sub.1-x Sn.sub.x Ti.sub.1+y O.sub.4 as a main component in combination with aZnO+bSb.sub.2 O.sub.3 as sintering-aiding agents, wherein both x and y correspond to molar ratios satisfying the following conditions: 0.1&lt;x&lt;0.3; 0&lt;y&lt;0.5; and wherein a and b indicate weight ratios to the total weight of the main component, and which satisfy the following condition: 0&lt;a+b&lt;0.05, wherein neither a nor b is zero.





DETAILED DESCRIPTION OF THE INVENTION
In accordance with the present invention, the microwave dielectric ceramic composition is comprised of a main component, consisting of zirconium oxide (Zro.sub.2), titanium oxide (TiO.sub.2) and tin oxide (SnO.sub.2), in combination with sintering-aiding agents, consisting of zinc oxide (ZnO) and antimony oxide (Sb.sub.2 O.sub.2). The microwave dielectric ceramic composition is prepared by a conventional production method for making sintered substances. The sintering temperature is relatively low, ranging from about 1,300.degree. to about 1,400.degree. C., providing an advantage in production cost.
The main component may be represented by the formula Zr.sub.1-x Sn.sub.x Ti.sub.1+y O.sub.4, wherein x and y are mole ratios. Preferably 0.1&lt;x&lt;0.3 and 0&lt;y&lt;0.5. For example, if x is greater than 0.3 mole, the characteristics of the composition deteriorate because of a large decrease in the Q value, in spite of a remarkable decrease in sintering temperature and increase in the dielectric constant. On the other hand, an x value less than 0.1 causes an increase in sintering temperature, so that the sintered substance does not have a tight structure. Accordingly, the preferred x range is between 0.1 and 0.3.
The amount of titanium oxide is preferably under 0.05 mole. The proper amount of titanium oxide compensates for a decrease in the Q value, caused by addition of the sintering-aiding agent, and tightening of the structure of the sintered substance. On the other hand, if too much titanium oxide is used, the sintering temperature is lowered, while the Q value and the temperature coefficient of resonant frequency characteristics deteriorate. Therefore, it is preferable to keep y between 0 and 0.5.
In accordance with the present invention, the microwave dielectric ceramic composition comprises sintering-aiding agents represented by the formula: aZnO+bSb.sub.2 O.sub.2.
Zinc oxide (ZnO) and antimony oxide (Sb.sub.2 O.sub.3), both used as sintering-aiding agents in the present invention, are added in an amount less than 0.05% by weight, based on the total amount of the main component. If the sintering-aiding agents are not added, the sintering temperature of the composition must be at least 1,450.degree. C. On the other hand, if too large an amount of the sintering-aiding agents is used, the sintering-temperature is lowered, while Q values are greatly decreased. Use of the proper amount of sintering-aiding agents decreases the sintering temperature, because of tightening of the structure of the sintered substance. Therefore, the a value and the b value preferably meet the condition: 0&lt;a+b&lt;0.05 (% by weight).
The dielectric ceramic composition according to the present invention has a dielectric constant greater than 35 and a Q value larger than 7,000 at 7 GHz. In addition, the structure of the dielectric ceramic composition according to the present invention is tightened due to use of the sintering-aiding agents. Consequently, the microwave dielectric ceramic composition exhibits stable Q values, stable temperature characteristics of resonant frequency, low loss resonant frequency, and long-term reliability, such as high temperature resistance and humidity resistance, in accordance with the present invention.
The preferred embodiment of the present invention will now be further described with reference to specific examples.
EXAMPLE
Feed material powder of the main component, consisting of zirconium oxide (ZrO.sub.2), titanium oxide (TiO.sub.2) and tin oxide (SnO.sub.2), all having purity of above 99%, was added with zinc oxide (ZnO) and antimony oxide (Sb.sub.2 O.sub.3) as sintering-aiding agents, in the ratios given in the following Table 1, and mixed for 2 hours in a planetary mill using a zirconium oxide ball and a nylon jar.
As a dispersing medium, distilled water was used. The resulting slurries were dried, calcined at temperatures ranging from 1,100.degree. to 1,200.degree. C. according to the composition ratio and pulverized. Thereafter, the calcined powders were molded under the pressure of 1 ton/cm.sup.2 into samples having a diameter of 10.00 mm and a thickness of 4.35 mm, using a dry press. The samples were subjected to sintering at temperatures ranging from 1,300.degree. to 1.400.degree. C., and then, both sides of the sintered samples were ground to plane the sides.
Reliability tests for the samples were carried out in accordance with Electromagnetic Industry Association Test (EIA RS198) and the test conditions were as follows: dielectric constants and loss coefficients were measured according to the Hakki Coleman method; high temperature test was carried out at a temperature of 83.degree..+-.3.degree. C. for 1,000 hours, using voltage of 100 V and current less than 50 mA, in order to measure Q values and resonant frequency temperature coefficients (T.sub.f); and the humidity resistance test was carried out at a temperature of 40.degree..+-.3.degree. C. for 500 hours, using voltage of 50 V and current of 50 mA, in order to measure Q values and resonant frequency temperature coefficients (T.sub.f).
The results are given as shown in Table 1 and Table 2.
TABLE 1__________________________________________________________________________Composition Sintering Aiding Sinter-Main Group Agent ing Di-Sample ZrO.sub.2 SnO.sub.2 TiO.sub.2 ZnO Sb.sub.2 O.sub.3 Temp. electric T.sub.fNo. 1 - x x 1 + y a b (.degree.C.) constant Q ppm/.degree.C.__________________________________________________________________________1 .85 .15 1.01 .01 .02 1320 36 7600 102 .8 .2 1.04 .01 .03 1340 38 8000 203 .75 .25 1.03 .03 .01 1320 39 7000 104 .75 .25 1.02 .03 .01 1360 39 7500 105 .84 .16 1.03 .02 .02 1380 38 8000 206 .84 .16 1.03 .02 .02 1450 38 7800 207 .72 .28 1.01 .02 .01 1360 38 7500 208 .82 .18 1.03 .02 .03 1350 39 8200 10 9* .95 .05 1.01 .01 .01 1500 30 5000 10010* .6 .4 -- -- -- 1300 100 200 200011* .8 .2 -- -- -- 1450 37 7000 012* .8 .2 1.02 .07 .07 1250 44 500 300013* .82 .18 1.1 .01 .01 1200 50 300 4000__________________________________________________________________________
TABLE 2__________________________________________________________________________Composition Sintering aiding High TemperatureMain Group Agent Humidity Resistance ResistanceZrO.sub.2 SnO.sub.2 TiO.sub.2 ZnO Sb.sub.2 O.sub.3 Test TestSample No. 1 - x x 1 + y a b Q T.sub.f ppm/.degree.C. Q T.sub.f ppm/.degree.C.__________________________________________________________________________1 .85 .15 1.01 .01 .02 7000 20 8000 102 .8 .2 1.04 .01 .03 7500 20 7500 203 .75 .25 1.03 .03 .01 6500 20 7000 104 .75 .25 1.02 .03 .01 7000 20 7500 105 .84 .16 1.03 .02 .02 8500 20 8000 206 .84 .16 1.03 .02 .02 8500 20 8000 207 .72 .28 1.01 .02 .01 7000 20 7000 208 .82 .19 1.03 .02 .03 6000 20 8000 10 9* .95 .05 1.01 .01 .01 2000 300 5000 10010* .6 .4 -- -- -- 100 4000 200 200011* .8 .2 -- -- -- 3000 100 7000 1012* .8 .2 1.02 .07 .07 -- -- -- --13* .82 .18 1.1 .01 .01 -- -- -- --__________________________________________________________________________
The composition of the samples comprises a basic composition represented by Zr.sub.1-x Sn.sub.x Ti.sub.1+y O.sub.4 and sintering-aiding agents of ZnO and Sb.sub.2 O.sub.3. In the Tables, the a value and the b value mean weight %, on the basis of the total weight of the basic composition.
The 9* sample does not have tight structure, so that it is inferior in its humidity resistance.
The 11* sample which is prepared according to a paper by Murata of Japan, does not have a tight structure, so that it is inferior in its resonant frequency temperature coefficient in a humidity resistance test.
Whilst the present invention has been described with reference to certain preferred embodinierits and examples, it will be appreciated by those skilled in the art that numerous variations and modifications are possible without departing from the spirit or scope of the invention as broadly described.
Claims
  • 1. A microwave dielectric ceramic composition consisting essentially of Zr.sub.1-x Sn.sub.x Ti.sub.1+y O.sub.4 as a main component in combination with sintering-aiding agents aZno+bSb.sub.2 O.sub.3, wherein x and y represent mole ratios satisfied by the following conditions: 0.1&lt;x&lt;0.3; 0&lt;y&lt;0.5; and further wherein a and b both represent weight ratios to the total weight of the main component satisfied by the following condition: 0&lt;a+b&lt;0.05, wherein neither a nor b is zero.
Priority Claims (1)
Number Date Country Kind
1993-17504 Sep 1993 KRX
US Referenced Citations (4)
Number Name Date Kind
4339543 Mage et al. Jul 1982
4665041 Higuchi et al. May 1987
4785375 Campbell Nov 1988
5132258 Takahashi et al. Jul 1992
Foreign Referenced Citations (1)
Number Date Country
2192460 Jun 1988 JPX