The present disclosure relates to a microwave heating device.
In recent years, microwave heating devices that include a microwave generator composed of a semiconductor device instead of a magnetron have been developed. Such a microwave heating device generally includes a coaxial connector placed in the power path extending between the microwave generator and the heating chamber (e.g., Patent Literature 1).
PTL 1: Japanese Unexamined Patent Application Publication No. 6-275345
In these microwave heating devices known in the art, the output terminal of the microwave generator is connected to the center conductor of the coaxial connector by, for example, soldering, and the external conductor of the coaxial connector is attached to the outer shell of the microwave generator.
In general, the center conductor of the coaxial connector is held by the insulator placed between the external conductor and the center conductor itself. In this structure, the center conductor of the coaxial connector is expanded by the heat generated by the microwave generator. This imposes a stress on the soldered joint between the microwave generator and the center conductor of the coaxial connector, possibly causing cracking.
The microwave heating device according to an aspect of the present disclosure includes the following components: a heating chamber configured to accommodate a heating target object, a microwave generator that generates a microwave, and a coaxial connector. The coaxial connector includes a center conductor, an insulator, and an external conductor. The center conductor is connected to the output terminal of the microwave generator. The coaxial connector includes an air gap between the center conductor and the insulator.
This aspect can reduce the occurrence of cracking of the soldered joint between the microwave generator and the coaxial connector, thereby improving the reliability of the microwave heating device.
The microwave heating device according to the first aspect of the present disclosure includes the following components: a heating chamber configured to accommodate a heating target object, a microwave generator configured to generate a microwave, and a coaxial connector. The coaxial connector includes a center conductor, an insulator, and an external conductor. The center conductor is connected to the output terminal of the microwave generator. The coaxial connector includes an air gap between the center conductor and the insulator.
In the microwave heating device according to the second aspect of the present disclosure, in addition to the first aspect, the air gap includes discontiguous spaces.
In the microwave heating device according to the third aspect of the present disclosure, in addition to the first aspect, the air gap has a dimension in the range of 0.4 mm to 0.8 mm, inclusive.
The exemplary embodiment of the present disclosure will now be described with reference to the drawings.
As shown in
Waveguide 2 has a bent shape consisting of the following: a horizontal portion extending almost horizontally along the top surface of heating chamber 1, and a vertical portion extending almost vertically. One end of waveguide 2 is connected to heating chamber 1 through power-feeding port 1b formed at the top surface of heating chamber 1, and the other end of waveguide 2 is closed. The upper surface of the horizontal portion of waveguide 2 is mounted with microwave generator 4 via coaxial connector 3.
As shown in
Microwave generator 4 includes substrate 4a mounted with an oscillator system composed of a semiconductor device. The oscillator system generates an electromagnetic wave with a frequency (e.g., 2.45 GHz), within the frequency range of the microwave. Coaxial connector 3 further includes soldered joint 3e connecting substrate 4a and the end of center conductor 3c that is closer to microwave generator 4.
In
In the microwave heating device according to the exemplary embodiment, the microwave power generated on substrate 4a travels through coaxial connector 3 and waveguide 2 and is radiated into heating chamber 1 through power-feeding port 1b.
As shown in
S11 (dB)=10×log (reflected power/incident power)
When the reflection coefficient S11 is −30 dB, the ratio of the reflected power with respect to the incident power is 0.1%. In general, when the reflection coefficient S11 is lower than −30 dB, the reflected power does not practically matter.
In the exemplary embodiment, the outer dimension OD of insulator 3b is set in such a manner that the reflection coefficient S11 is below −30 dB. This causes the reflected power to be equal to or less than 1/1000 of the incident power. The contact area between center conductor 3c and insulator 3b is minimized, and center conductor 3c is left unfixed in waveguide 2.
In the exemplary embodiment, the internal stress caused by the thermal expansion of center conductor 3c can be released toward waveguide 2. This results in reducing the stress on soldered joint 3e. In particular, setting the dimension GAP of air gap 3d to the range of 0.4 mm to 0.8 mm can reduce the stress on soldered joint 3e without increasing the reflected power.
As shown in
The exemplary embodiment can reduce the occurrence of cracking of the soldered joint between microwave generator 4 and coaxial connector 3, thereby improving the reliability of the microwave heating device.
As described above, the present disclosure is applicable to microwave heating devices such as microwave ovens, plasma generators, and dryers.
Number | Date | Country | Kind |
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2018-172001 | Sep 2018 | JP | national |
Filing Document | Filing Date | Country | Kind |
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PCT/JP2019/035646 | 9/11/2019 | WO | 00 |