Microwave Plasma Diamond Deposition at High Growth Rates

Information

  • NSF Award
  • 9060510
Owner
  • Award Id
    9060510
  • Award Effective Date
    1/1/1991 - 34 years ago
  • Award Expiration Date
    9/30/1991 - 33 years ago
  • Award Amount
    $ 50,000.00
  • Award Instrument
    Standard Grant

Microwave Plasma Diamond Deposition at High Growth Rates

Recently developed CVD diamond thin films can be used in a wide variety of applications from electronics to cutting tools, infrared optics to abrasives. High quality diamond films are presently grown at rates of about 1 micron/hr. Crucial to the successful commercialization of the technology is the attainment of larger growth rates. Atmospheric pressure plasma torches have been used to obtain high diamond growth rates but are limited to small areas. A high power density, 1 kW/cm2 at 200 Torr pressure, microwave plasma discharge is proposed to increase growth rates by at least one order-or- magnitude. A microwave discharge is chosen for scale-up of the deposition area, and the high quality films which are obtained. A study of power density, neutral pressure, substrate temperature and plasma chemistry is proposed, for understanding the mechanisms for diamond growth. A commercially available high growth rate diamond reactor could be designed as a direct consequence of this research.

  • Program Officer
    Ritchie B. Coryell
  • Min Amd Letter Date
    12/26/1990 - 34 years ago
  • Max Amd Letter Date
    12/26/1990 - 34 years ago
  • ARRA Amount

Institutions

  • Name
    Applied Science and Technology Inc
  • City
    Woburn
  • State
    MA
  • Country
    United States
  • Address
    35 Cabot Road
  • Postal Code
    018011053
  • Phone Number
    6179335560

Investigators

  • First Name
    Richard
  • Last Name
    Post
  • Start Date
    1/1/1991 12:00:00 AM

FOA Information

  • Name
    Engineering-Metallurgy & Material
  • Code
    57