Mixer and differential amplifier having bandpass frequency selectivity

Information

  • Patent Grant
  • 6825722
  • Patent Number
    6,825,722
  • Date Filed
    Friday, March 21, 2003
    22 years ago
  • Date Issued
    Tuesday, November 30, 2004
    20 years ago
Abstract
A mixer and a differential amplifier are formed using simple circuit configurations such that the cutoff frequencies thereof can be easily changed. Each of the mixer and the differential amplifier includes an NMOS transistor to which an RF signal is input, NMOS transistors to which an LO− signal and an LO+ signal are respectively input from a local oscillator, and two parallel resonant circuits each serving as an output load and including an active inductor, a capacitor, and a resistor.
Description




BACKGROUND OF THE INVENTION




1. Field of Invention




The present invention relates to a mixer for mixing an AC signal with a reference signal having a particular frequency, and also to a differential amplifier for amplifying the difference between two signals and outputting a resultant amplified differential signal.




2. Description of Related Art




In an RF (Radio Frequency) receiving circuit, a received RF signal is mixed by a mixer with an LO (Local Oscillator) signal and the RF signal is down-converted into an IF (Intermediate Frequency) signal.





FIG. 7

illustrates a mixer in an RF receiving circuit.





FIG. 8

illustrates an exemplary process in which the mixer shown in

FIG. 7

down-converts an RF signal into an IF signal.





FIG. 7

illustrates an RF signal serving as a carrier signal and an LO signal supplied from a local oscillator (not shown) applied to the mixer


101


. The mixer


101


mixes the RF signal and the LO signal and outputs an IF signal as shown in FIG.


8


. Thus, the RF signal is down-converted into the IF signal.




When it is required to remove undesirable signal components in frequency bands other than the IF frequency band from the IF signal obtained via the down conversion, a bandpass filter is generally positioned at a stage following the mixer.

FIG. 9

illustrates a mixer and a bandpass filter.

FIG. 10

illustrates an exemplary process in which undesirable signal components are removed from an IF signal by the bandpass filter.




As shown in

FIG. 10

, when there are signals A


1


and B


1


at both sides of an RF signal, the RF signal including the signals A


1


and B


1


and the LO signal are applied to the mixer


101


shown in FIG.


9


. As a result, in addition to the IF signal, signals A


2


and B


2


are output from the mixer


101


. If signals A


2


and B


2


are passed through the bandpass filter, the signals A


2


and B


2


are attenuated into signals A


3


and B


3


. Thus, their influence on the IF signal is reduced.





FIG. 11

illustrates a circuit configuration of the bandpass filter shown in FIG.


9


.

FIG. 12

illustrates the frequency characteristic of the bandpass filter shown in FIG.


11


.




As shown in

FIG. 11

, the bandpass filter


102


is formed of passive elements including capacitors


102


_


1


and


102


_


4


and resistors


102


_


2


and


102


_


3


. As shown in

FIG. 12

, the bandpass filter


102


has cutoff frequencies f


1


and f


2


determined by the values of the passive elements. When the capacitors


102


_


1


and


102


_


4


have capacitance C


1


and C


2


, and the resistors


102


_


2


and


102


_


3


have resistance R


1


and R


2


, the cutoff frequency f


1


is given by the equation:









f1
=

1

2





π



C1
·
R1








(
1
)













and the cutoff frequency f


2


is given by the equation:









f2
=

1

2





π



C2
·
R2








(
2
)













The bandpass filter


102


passes frequency components within a particular band determined by the cutoff frequencies f


1


and f


2


.





FIG. 13

illustrates a circuit configuration of a bandpass filter, configured differently from the bandpass filter shown in FIG.


11


.

FIG. 14

illustrates the frequency characteristic of the bandpass filter shown in FIG.


13


.




The bandpass filter


103


shown in

FIG. 13

is an active bandpass filter including capacitors


103


_


1


and


103


_


4


, resistors


103


_


2


and


103


_


3


, and an operational amplifier


103


_


5


. As with the bandpass filter


102


shown in

FIG. 11

, the bandpass filter


103


also has cutoff frequencies f


3


and f


4


determined by values of the passive elements, and the bandpass filter


103


passes frequency components within a particular band determined by the cutoff frequencies f


3


and f


4


.





FIG. 15

illustrates a biquad bandpass filter.

FIG. 16

illustrates a circuit configuration of a transconductor amplifier used in the biquad bandpass filter.




The biquad bandpass filter


104


shown in

FIG. 15

is a bandpass filter using the Gm-C technology comprising transconductor amplifiers (OTAs: Operational Transconductance Amplifiers)


104


_


1


,


104


_


2


, and


104


_


3


, capacitors


104


_


4


,


104


_


5


,


104


_


6


, and


104


_


7


, and a resistor


104


_


8


. The capacitors


104


_


4


,


104


_


5


,


104


_


6


, and


104


_


7


all have equal capacitance C, and the resistor


104


_


8


has resistance R.




The transconductor amplifier


104


_


1


includes, as shown in

FIG. 16

, NMOS transistors


104


_


11


,


104


_


12


,


104


_


13


,


104


_


14


,


104


_


15


,


104


_


16


,


104


_


17


,


104


_


18


, and


104


_


19


, constant current sources


104


_


20


,


104


_


21


,


104


_


22


,


104


_


23


, and resistors


104


_


24


and


104


_


25


. Signals IN+ and IN−, which are different in phase by 180° from each other, are applied to the NMOS transistors


104


_


11


and


104


_


12


, respectively. An external voltage signal Vf is applied to the NMOS transistor


14


_


19


. The transconductance gm of the transconductor amplifier


104


_


1


varies depending on the value of the external voltage signal Vf applied to the NMOS transistors


104


_


19


. The transconductance gm is given by the equation:








gm


=β(


Vf−Vs−Vt


)






wherein β is the feedback factor of the NMOS transistor


104


_


19


, Vs is equal to Vs


2


(when Vs


1


>Vs


2


) or Vs


1


(when Vs


1


<Vs


2


) (Vs


1


and Vs


2


are source and drain voltages, respectively, of the NMOS transistor


104


_


19


), and Vt is the threshold voltage of the NMOS transistor


104


_


19


.




Although the circuit configuration has been described above only for the transconductor amplifier


104


_


1


, the transconductor amplifiers


104


_


2


and


104


_


3


also have a similar circuit configuration.





FIG. 17

illustrates the frequency characteristic of the biquad bandpass filter shown in FIG.


15


.




The frequency characteristic of this biquad bandpass filter


15


shown in

FIG. 17

is variable. More specifically, the cutoff frequencies f


01


and f


02


can be varied by varying the external voltage signal Vf thereby varying the transconductance gm of the transconductor amplifiers


104


_


1


,


104


_


2


, and


104


_


3


. For example, when the external voltage signal Vf applied to the transconductor amplifier


104


_


2


is varied, the center frequency f


0


shown in

FIG. 17

is given by the equation:








f




0


=


gm




2


/2π


C








where gm


2


is the transconductance of the transconductor amplifier


104


_


2


.




On the other hand, the difference between the cutoff frequency f


01


and the cutoff frequency f


02


is given by the equation:








Δf=gm




2


×


R.








In the bandpass filters


102


and


103


shown in

FIGS. 11 and 13

, respectively, their cutoff frequencies are determined by the values of passive elements. This means that, to change the cutoff frequencies, the passive elements themselves must be changed. To change the values of passive elements formed on a semiconductor chip using CMOS technology or the like, it is required to change the layout of the passive elements of the semiconductor chip. The change in the layout needs a long time and high cost and thus the change results in great disadvantages in production or development. Another problem is that passive elements occupy large areas on the semiconductor chip.




Although the biquad bandpass filter


104


shown in

FIG. 15

has the advantage that the cutoff frequencies can be controlled by the external voltage signal, the biquad bandpass filter


104


has the disadvantage that the circuit configuration of the transconductor amplifiers


104


_


1


,


104


_


2


, and


104


_


3


is complicated, needs a large number of transistors, and then needs a large-scale circuit.




SUMMARY OF THE INVENTION




In view of the above, it is an object of the present invention to provide a mixer and a differential amplifier which have simple circuit configurations and which allow the cutoff frequency to be easily changed.




According to an aspect of the present invention, a mixer is provided for mixing an AC signal with a reference signal having a particular frequency, wherein the mixer includes a parallel resonant circuit including an active inductor and serving as an output load.




Preferably, the AC signal is an RF signal and the reference signal is an output signal of a local oscillator, the frequency of the output signal being different by a particular value from the frequency of the RF signal.




Preferably, the active inductor includes two transconductance circuits and a capacitor such that the inductance of the active inductor is set by the transconductance of the two transconductance circuits and the capacitance of the capacitor.




Preferably, the inductance of the active inductor can be arbitrarily varied by controlling the transconductance of the two transconductance circuits in response to an external signal.




Preferably, the parallel resonant circuit comprises an active inductor, a capacitor, and a resistor that are connected in parallel.




Preferably, the parallel resonant circuit has bandpass frequency selectivity given by the expression:








1

2





π


LC



+


R
2

·


C
L





f



1

2





π


LC



-


R
2

·


C
L














where L is the inductance of the active inductor, C is the capacitance of the capacitor, R is the resistance of the resistor, and f is the resonant frequency of the parallel resonant circuit.




According to another aspect of the present invention, there is provided a differential amplifier for amplifying the difference between two input signals and outputting a resultant amplified differential signal, wherein the differential amplifier includes a parallel resonant circuit including an active inductor and serving as an output load.




Preferably, the active inductor includes two transconductance circuits and a capacitor such that the inductance of the active inductor is set by the transconductance of the two transconductance circuits and the capacitance of the capacitor.




Preferably, the inductance of the active inductor can be arbitrarily varied by controlling the transconductance of the two transconductance circuits in response to an external signal.




Preferably, the parallel resonant circuit includes an active inductor, a capacitor, and a resistor that are connected in parallel.




Preferably, the parallel resonant circuit has bandpass frequency selectivity given by the expression:








1

2





π


LC



+


R
2

·


C
L





f



1

2





π


LC



-


R
2

·


C
L














where L is the inductance of the active inductor, C is the capacitance of the capacitor, R is the resistance of the resistor, and f is the resonant frequency of the parallel resonant circuit.




As described above, each of the mixer and the differential amplifier according to the present invention has a resonant circuit including an active inductor and serving as an output load. The active inductor includes a transconductance circuit, which is constructed in a simple form as will be described later with reference to specific embodiments. The inductance L of the active inductor can be arbitrarily varied by controlling the transconductance of the transconductance circuit in response to an external signal, thereby easily varying the cutoff frequencies of the bandpass frequency selectivity. Each of the mixer and the differential amplifier can be formed on a semiconductor chip with a smaller size than is needed for a conventional bandpass filter using passive elements.











BRIEF DESCRIPTION OF THE DRAWINGS





FIG. 1

is a circuit diagram of a mixer according to an embodiment of the present invention;





FIG. 2

is a diagram showing an equivalent circuit of an active inductor used in the mixer shown in

FIG. 1

;





FIG. 3

is a graph showing the impedance-frequency characteristic of a parallel resonant circuit;





FIG. 4

is a graph showing the characteristic of a bandpass filter of the mixer shown in

FIG. 1

;





FIG. 5

is a circuit diagram showing a circuit configuration of the active inductor used in the parallel resonant circuit of the mixer shown in

FIG. 1

;





FIG. 6

is a circuit diagram of a differential amplifier according to an embodiment of the present invention;





FIG. 7

is a diagram showing a mixer used in an RF receiving circuit;





FIG. 8

is a diagram showing a manner in which an RF signal applied to the mixer shown in

FIG. 7

is down-converted into an IF signal;





FIG. 9

is a diagram showing a mixer and a bandpass filter;





FIG. 10

is a diagram showing a manner in which undesirable signals other than an IF signal are removed by a bandpass filter;





FIG. 11

is a diagram showing the circuit configuration of the bandpass filter shown in

FIG. 9

;





FIG. 12

is a graph showing the frequency characteristic of the bandpass filter shown in

FIG. 11

;





FIG. 13

is a circuit diagram of another bandpass filter having a configuration different from that of the bandpass filter shown in

FIG. 11

;





FIG. 14

is a graph showing the frequency characteristic of the bandpass filter shown in

FIG. 13

;





FIG. 15

is a circuit diagram of a biquad bandpass filter;





FIG. 16

is a circuit diagram of a transconductor amplifier used in the biquad bandpass filter; and





FIG. 17

is a graph showing the frequency characteristic of the biquad bandpass filter shown in FIG.


15


.











DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS




The present invention is described in further detail below with reference to preferred embodiments.





FIG. 1

is a circuit diagram of a mixer according to an embodiment of the present invention.




The mixer


10


shown in

FIG. 1

is a single-balanced mixer formed on a semiconductor chip using CMOS technology or the like. The mixer


10


includes an NMOS transistor


11


to which an RF signal is input, an NMOS transistor


12


to which an LO− signal is input from a local oscillator, and an NMOS transistor


13


to which an LO+ signal different in phase by 180° from the LO− signal is input.




In the mixer


10


, a parallel resonant circuit


14


serving as an output load of the mixer


10


is disposed between a power supply V


DD


and the NMOS transistor


12


, and a parallel resonant circuit


15


serving as an output load is disposed between the power supply V


DD


and the NMOS transistor


13


.




The parallel resonant circuit


14


includes an active inductor


14


_


1


, a capacitor


14


_


2


, and a resistor


14


_


3


. The parallel resonant circuit


15


is configured in a similar manner as the parallel resonant circuit


14


and includes an active inductor


15


_


1


, a capacitor


15


_


2


, and a resistor


15


_


3


.





FIG. 2

is a diagram showing an equivalent circuit of the active inductor


14


-


1


used in the mixer


10


shown in FIG.


1


.




Although

FIG. 2

shows the circuit configuration and the equivalent circuit only for the active inductor


14


_


1


, the active inductor


15


_


1


also has a similar circuit configuration and equivalent circuit.




The active inductor (also called a gyrator)


14


_


1


shown in

FIG. 2

includes two transconductance (gm) circuits


14


_


11


and


14


_


12


and a capacitor


14


_


13


. This active inductor


14


_


1


is equivalent to an inductor having inductance L given by the equation:









L
=


C
L


gm1
·
gm2






(
3
)













where gm


1


and −gm


2


are transconductance of the transconductance circuits


14


_


11


and


14


_


12


, respectively, and C


L


is the capacitance of the capacitor


14


_


13


.




As will be described later, the inductance L of the active inductor


14


_


1


can be set to an arbitrary value by adjusting the transconductance gm


1


and gm


2


of the transconductance circuits


14


_


11


and


14


_


12


, by controlling the external signal, or by adjusting the capacitance C


L


of the capacitor


14


_


13


.




The impedance Za of the parallel resonant circuit


14


(and also the parallel resonant circuit


15


) used as the load of the mixer


10


is given by the equation:









Za
=

1


1
R

+

1

j





2

fL


+

j





2





π





c







(
4
)














FIG. 3

shows the impedance-frequency characteristic of the parallel resonant circuit


14


.




In

FIG. 3

, the horizontal axis indicates the frequency and the vertical axis indicates the impedance. In this parallel resonant circuit


14


, the impedance has a maximum value Zmax at a frequency of ½π√{square root over (LC)} and has a value of Zmax/√{square root over (2)} at a frequency lower by R/2√{square root over (C/L)} and also at a frequency higher by R/2√{square root over (C/L)} than the frequency at which the impedance has the maximum value Zmax. Such frequency selectivity of the output load of the mixer


10


causes the output signal of the mixer


10


to have frequency selectivity, and thus the mixer


10


has bandpass frequency selectivity.





FIG. 4

shows the bandpass frequency characteristic of the mixer shown in FIG.


1


.




In

FIG. 4

, the horizontal axis indicates the frequency and the vertical axis indicates the gain. Herein, the cutoff frequencies f


1


and f


2


are given by the equations:









f1
=


1

2





π


LC



-


R
2

·


C
L








(
5
)






f2
=


1

2





π


LC



+


R
2

·


C
L








(
6
)













In the mixer


10


according to the present embodiment, as will be described later, the transconductance gm of the transconductance circuit of each of the active inductors


14


_


1


and


15


_


1


can be arbitrarily adjusted by the external signal thereby arbitrarily varying the inductance L. This makes it possible to vary the cutoff frequencies of the bandpass filter within the ranges given by equations (5) and (6), respectively.





FIG. 5

shows a circuit configuration of the active inductor used in the parallel resonant circuit of the mixer shown in FIG.


1


.




The active inductor


14


_


1


shown in

FIG. 5

includes, as described earlier with reference to

FIG. 2

, the transconductance circuits


14


_


11


and


14


_


12


and the capacitor


14


_


13


. The transconductance circuit


14


_


11


includes a constant current source


14


_


11




a


, PMOS transistors


14


_


11




b


and


14


_


11




c


, and NMOS transistors


14


_


11




d


and


14


_


11




e


. A bias voltage Vbias is applied as the external signal from the outside of the chip to the PMOS transistor


14


_


11




c


. The transconductance circuit


14


_


12


includes a constant current source


14


_


12




a


, and an NMOS transistor


14


_


12




b


. The transconductance gm of the transconductance circuit


14


_


11


and that of the transconductance circuit


14


_


12


, forming the active inductor


14


_


1


, are equal to the transconductance gm of the PMOS transistor


14


_


11




c


and that of the NMOS transistor


14


_


12




b


, respectively. Therefore, by controlling the bias current flowing through the respective transconductance circuits


14


_


11


and


14


_


12


according to the bias voltage Vbias, the transconductance gm of the PMOS transistor


14


_


11




c


and that of the NMOS transistor


14


_


12




b


can be controlled arbitrarily. The active inductor


15


_


1


has a circuit configuration similar to that of the active inductor


14


_


1


. Although in the present embodiment, the bias currents passed through the transconductance circuits


14


_


11


and


14


_


12


are controlled by the bias voltage Vbias, the bias currents passed through the transconductance circuits


14


_


11


and


14


_


12


may be directly controlled from the outside of the chip.




Use of the active inductors


14


_


1


and


15


_


1


allows achievement of high inductance using a small number of transistors, and thus it becomes possible to reduce the chip size compared with the chip sizes required for the bandpass filters shown in

FIGS. 11

,


13


and


15


.




Although in the present embodiment, the invention is applied to a single balanced mixer, the invention may also be applied to other types of mixers, as long as the mixers include a parallel resonant circuit which includes an active inductor and which serves as an output load.





FIG. 6

is a circuit diagram of a differential amplifier according to an embodiment of the present invention.




The differential amplifier


20


shown in

FIG. 6

includes a constant current source


21


, NMOS transistors


22


and


23


to which signals IN− and IN+, separated in phase by 180° from each other, are applied, a parallel resonant circuit


24


serving as an output load disposed between a power supply V


DD


and the NMOS transistor


22


, and a parallel resonant circuit


25


serving as an output load disposed between the power supply V


DD


and the NMOS transistor


23


.




The parallel resonant circuit


24


includes an active inductor


24


_


1


, a capacitor


24


_


2


, and a resistor


24


_


3


. Similarly, the parallel resonant circuit


25


includes an active inductor


25


_


1


, a capacitor


25


_


2


, and a resistor


25


_


3


. The operations and functions of those parallel resonant circuits


24


and


25


are similar to those of the parallel resonant circuits


14


and


15


described above, and thus a further description thereof is not given herein. Use of the parallel resonant circuits


24


and


25


as the output loads of the differential amplifier


20


causes the differential amplifier


20


to have bandpass frequency selectivity similar to that of the mixer


10


described above.




Furthermore, use of parallel resonant circuits as output loads in the mixer


10


or the differential amplifier


20


according to the present invention makes it possible to control the cutoff frequency of the bandpass frequency selectivity by the external signal. This allows reductions in production costs and the development period. Furthermore, compared with conventional bandpass filters using passive elements, a smaller size of the semiconductor chip can be realized. This allows a reduction in cost for the semiconductor chip.




As described above, the mixer and the differential amplifier according to the present invention has the advantage that the cutoff frequencies can be easily changed and they can be formed to be simple in circuit configuration.




While particular embodiments have been described, alternatives, modifications, variations, improvements and substantial equivalents that are or may be presently unforeseen may arise to Applicant or others skilled in the art. Accordingly, the amended claims as filed and as they may be amended are intended to embrace all such alternatives, modifications, variations, improvements and substantial equivalents.



Claims
  • 1. A mixer for mixing an AC signal with a reference signal having a particular frequency, comprising:a parallel resonant circuit including an active inductor and serving as an output load, wherein the AC signal is an RF signal and the reference signal is an output signal of a local oscillator, the frequency of the output signal being separated by a particular value from the frequency of the RF signal.
  • 2. A mixer according to claim 1, wherein the active inductor comprises two transconductance circuits and a capacitor, and the inductance of the active inductor is controlled by the transconductance of the two transconductance circuits and the capacitance of the capacitor.
  • 3. A mixer according to claim 2, wherein the inductance of the active inductor can be arbitrarily varied by controlling the transconductance of the two transconductance circuits in response to an external signal.
  • 4. A mixer for mixing an AC signal with a reference signal having a particular frequency, comprising:a parallel resonant circuit including an active inductor and serving as an output load, wherein the parallel resonant circuit comprises an active inductor, a capacitor, and a resistor that are connected in parallel.
  • 5. A mixer according to claim 4, wherein the parallel resonant circuit has bandpass frequency selectivity given by the expression: 12⁢ ⁢π⁢LC+R2·CL≥f≥12⁢ ⁢π⁢LC-R2·CLwhere L is the inductance of the active inductor, C is the capacitance of the capacitor, R is the resistance of the resistor, and f is the resonant frequency of the parallel circuit.
  • 6. A differential amplifier for amplifying the difference between two input signals and outputting a resultant amplified differential signal, comprising:a parallel resonant circuit including an active inductor and serving as an output load, wherein the parallel resonant circuit comprises an active inductor, a capacitor, and a resistor that are connected in parallel.
  • 7. A differential amplifier for amplifying the difference between two input signals and outputting resultant amplified differential signal, comprising:a parallel resonant circuit including an active inductor and serving as an output load, wherein the parallel resonant circuit has bandpass frequency selectively given by the expression: 12⁢ ⁢π⁢LC+R2·CL≥f≥12⁢ ⁢π⁢LC-R2·CLwhere L is the inductance of the active inductor, C is the capacitance of the capacitor, R is the resistance of the resistor, and f is the resonant frequency of the parallel resonant circuit.
  • 8. A differential amplifier according to claim 6, wherein the active inductor includes two transconductance circuits and a capacitor, and the inductance of the active inductor is controlled by the transconductance of the two transconductance circuits and the capacitance of the capacitor.
  • 9. A differential amplifier according to claim 8, wherein the inductance of the active inductor can be arbitrarily varied by controlling the transconductance of the two transconductive circits in response to an external signal.
Priority Claims (1)
Number Date Country Kind
2002-095771 Mar 2002 JP
US Referenced Citations (4)
Number Name Date Kind
3624514 Putzer Nov 1971 A
5682122 Toumazou et al. Oct 1997 A
6028496 Ko et al. Feb 2000 A
20020028660 Desclos Mar 2002 A1