Patent Grant
10766786
Improved performance and miniaturization are needed to meet the ever-increasing demands of devices used in ultrahigh frequency (UHF), L-band, and S-band applications, which are of particular interest in a variety of commercial and defense related industries. As a critical component in radar and modern wireless communication systems, antenna elements with compact size are constantly being developed. It has, however, been challenging to develop ferrite materials for use in such high frequency applications. Known ferrite materials exhibit relatively high magnetic losses at high frequencies, which have not met the need for the design of a practical antenna.
More generally, in modern wireless communication systems the demand for high performance devices of miniaturized structure is ever increasing. A material exhibiting high permeability with equivalent permittivity and having low magnetic and dielectric losses is ideal as an antenna substrate material. Such materials enable miniaturization, while concomitantly maintaining or enhancing antenna gain and bandwidth. Spinel ferrites with high permeability values, such as NiZn ferrites, have been widely used for high frequency applications. However, these ferrites exhibit relatively low cutoff frequencies that prevent their use above 0.3 GHz. Some hexaferrite materials, such as cobalt substituted barium Y-type (Co2Y) and Z-type (Co2Z) hexaferrites have much higher ferromagnetic resonance frequencies above 1.0 GHz due to their high magnetocrystalline anisotropy fields and high permeabilities. Accordingly, the use of magnetodielectric substrates with values of the permittivity ε′ equivalent to the permeability μ′ is popular due to the ease in impedance matching between substrate and free space among other benefits. However, it is very challenging to obtain low magnetic and dielectric losses and high permeability of the dielectric substrates. It has been reported that Co2Y has ε′ of 15-20 and μ′ of 2-3, while Co2Z has ε′ of 12 and μ′ of 18-19, but magnetic loss of the single phase Y- or Z-type ferrite is still considerably high (loss tangent, tan δμ>0.5) at f>0.5 GHz.
The invention relates to a hexaferrite composition useful as a magnetic material in electrical devices operating in the high frequency range. The hexaferrite composition comprises barium and/or strontium, molybdenum, cobalt, and iron and has a Z-type hexaferrite phase. The hexaferrite can be stoichiometric or non-stoichiometric. With substitutions of barium, strontium, and molybdenum as described herein, it is possible to provide magnetodielectric hexaferrite compositions of tunable permeability and permittivity and low dielectric and magnetic losses over high frequency ranges. The hexaferrite compositions can also be cost-effective for the mass production of devices such as microwave antenna substrates and in spintronics applications, such as giant magnetoresistant (GMR) devices. The invention also relates to methods of making the hexaferrite composition and articles, devices, or parts that comprise the hexaferrite composition.
Other aspects of the method and system include the following:
y=20 to 24; and
z=0 to 3.
y=20 to 24; and
z=0 to 3; and
wherein the amount of Ba and the amount of Sr in the hexaferrite composition and the second hexaferrite composition differ.
The invention will be more fully understood from the following detailed description taken in conjunction with the accompanying drawings in which:
The present invention relates to a Co2Z-type hexaferrite composition in which the magnetic and dielectric losses can be controlled by the use of molybdenum (Mo) while retaining high permeability and/or low permittivity. The composition involves the substitution of Mo for iron (Fe) in Co2Z-type hexaferrites. Molybdenum can successfully reduce magnetic loss and enhance permeability in both stoichiometric and non-stoichiometric strontium, barium, or strontium-barium Z-type hexaferrites. In some embodiments, MoO2 can be used to reduce magnetic losses in Ba3Co2Fe24O41 hexaferrites (termed herein BaCo2Z hexaferrites), and in other embodiments in Sr3Co2Fe24O41 hexaferrites (termed herein SrCo2Z hexaferrites). In some embodiments, MoO2 can be used to reduce magnetic losses in Co2Z hexaferrites that include both Ba and Sr and/or non-stoichiometric amounts of Fe.
More generally, hexagonal ferrites, or hexaferrites, are a type of iron-oxide ceramic compound that has a hexagonal crystal structure and exhibits magnetic properties. Several types or families of hexaferrites are known, including Z-type ferrites, Ba3Me2Fe24O41, where Me can be a small 2+ cation such as Co, Ni, or Zn. Sr can be substituted for Ba. Other hexaferrite types include M-type hexaferrites ((Ba,Sr)Fe12O19), W-type hexaferrites ((Ba,Sr)Me2Fe16O27), Y-type hexaferrites ((Ba,Sr)2Me2Fe12O22), X-type hexaferrites ((Ba,Sr)2Me2Fe28O46), and U-type hexaferrites ((Ba,Sr)4Me2Fe36O60).
Cobalt-substituted barium Z-type (Co2Z) hexaferrites can exhibit high ferromagnetic resonance frequencies and permeabilities, although it has been challenging to design high frequency devices that have a relative permeability μ and relative permittivity ε of an equal or substantially equal value as well as low magnetic and dielectric loss tangents (tan δμ, tan δε) and loss factors (tan δμ/μ, tan δε/ε). (As used herein, the permeability and permittivity values are the relative permeability and the relative permittivity, respectively.) Schematic crystal structure diagrams of M-type phase, Y-type phase, and Z-type phase hexaferrites are illustrated in
The present hexaferrite composition is suitable for operation in high frequency applications, and in particular ultrahigh frequency (UHF) and microwave applications and devices, such as antennas, filters, inductors, and circulators operable in the ultrahigh and microwave frequency ranges. The ultrahigh frequency (UHF) range is 0.3 GHz to 3 GHz. The microwave frequency range is 0.3 GHz to 300 GHz. The hexaferrite composition is also suitable for use in spintronics applications, such as giant magnetoresistant (GMR) devices.
The present hexaferrite composition contains Fe, Co, Mo, and one or both of Ba and Sr, and has a Z-type hexaferrite phase. The hexaferrite composition has the formula:
(BazSr(3-z))Co(2+x)MoxFe(y-2x)O41
where x=0.01 to 0.20;
y=20 to 24; and
z=0 to 3.
In some embodiments, x=0.08 to 0.15. In other embodiments, x=0.10 to 0.12.
In some embodiments, the composition exhibits high real permeability μ′ at high frequencies:
Permeability at f=0.1 to 1 GHz: μ>8;
Permeability at f=0.1 to 0.8 GHz: μ>10.
Additionally, in some embodiments, the composition has high, equal or substantially equal values of ε′ and μ′ (approximately 8 to 9) at f=0.1 to 1 GHz. The composition exhibits low magnetic and dielectric losses and loss factors:
Loss at f=0.1 to 0.8 GHz: tan δμ<0.3 and tan δε<0.01.
Loss factor at f=0.8 GHz: tan δμ/μ′<0.03 and tan δε/ε′<0.001.
In some embodiments, a hexaferrite composition is a Mo-doped BaCo2Z hexaferrite in which 1.2<z<3. In some embodiments, a hexaferrite composition is a Mo-doped BaCo2Z hexaferrite in which z=3. In some embodiments, Mo-doped BaCo2Z hexaferrites can have a real permeability ranging from 8.0 to 12.0 at frequencies of about 0.1 GHz to about 1.0 GHz. In some embodiments, the material can have a magnetic loss tangent ranging from 0.08 to 0.15 at f=0.3 GHz and a magnetic loss tangent ranging from 0.3 to 0.75 at f=0.8 GHz, at a Mo content of 0.08<x<0.15. In some embodiments, the material can have a real permittivity ranging from 8 to 13 over a range of f=0.1 to 10.0 GHz at a Mo content of 0.01<x<0.20. In some embodiments, the dielectric loss tangent can be less than 0.02 at f=0.1 to 10.0 GHz for a Mo content of 0.01<x<0.12.
A Mo-doped BaCo2Z hexaferrite can be used for applications such as microwave antennas. The material can be used in conjunction with a second hexaferrite operable over a different frequency range, for example, a higher frequency range, to provide a single device with a greater frequency range of operation. In some embodiments, the second hexaferrite can be a Mo-doped SrCo2Z hexaferrite.
In some embodiments, a hexaferrite composition is a Mo-doped SrCo2Z hexaferrite in which 0.0<z<0.5. In some embodiments, a hexaferrite composition is a Mo-doped SrCo2Z hexaferrite in which z=0.0. In some embodiments, Mo-doped SrCo2Z hexaferrites can have a real permeability ranging from 2.0 to 4.0 over a frequency range of about 0.1 GHz to about 3.0 GHz. In some embodiments, Mo-doped SrCo2Z hexaferrites can have a real permeability ranging from 2.7 to 4.1 at f=0.1 to 1.0 GHz. In some embodiments, the real permeability is greater than 3.6 at f=1.0 GHz and a Mo content 0.08<x<0.12. In some embodiments, the material can have a magnetic loss tangent ranging from 0.08 to 0.3 at f=0.1 to 1.0 GHz. In some embodiments, the magnetic loss tangent is less than 0.25 at f=1.0 GHz and a Mo content 0.08<x<0.12. In some embodiments, the material can have a real permittivity ranging from 12 to 18 over a range of f=0.1 to 10.0 GHz at a Mo content of 0.01<x<0.20. In some embodiments, the dielectric loss tangent can be less than 0.03 at f=1.0 GHz for a Mo content of 0.08<x<0.12.
A Mo-doped SrCo2Z hexaferrite can be used for applications such as microwave antennas. The material can be used in conjunction with a second hexaferrite operable over a different frequency range for example, a lower frequency range, to provide a single device with a greater frequency range of operation. In some embodiments, the second hexaferrite can be a Mo-doped BaCo2Z.
In some embodiments, a hexaferrite composition is a Mo-doped Co2Z hexaferrite with Sr and Ba, in which z=1.5. In some embodiments, a Mo-doped hexaferrite composition with Sr and Ba can have a real permeability ranging from 7.5 to 9.0 at f=0.8 to 1.0 GHz. In some embodiments, a Mo-doped hexaferrite composition with Sr and Ba can have a magnetic loss tangent ranging from 0.7 to 0.2 at f=0.8 to 1.0 GHz. In some embodiments, a Mo-doped hexaferrite composition with Sr and Ba can have a real permittivity ranging from 6.6 to 8.7 at f=0.8 to 1.0 GHz. In some embodiments, a Mo-doped hexaferrite composition with Sr and Ba can have a dielectric loss tangent ranging from 0.0019 to 0.0028 at f=0.8 to 1.0 GHz.
In some embodiments, the Mo-doped hexaferrite composition has a real permeability ranging from about 2.0 to about 12.0 at frequencies of about 0.1 GHz to about 3 GHz or greater. In some embodiments, at frequencies ranging from 0.1 GHz to at least 3.0 GHz and in some embodiments at higher frequencies, the real permeability is at least 3.0, at least 5.0, at least 7.0, at least 8.0, at least 9.0, at least 10.0, at least 11.0, or at least 12.0.
In some embodiments, the hexaferrite composition has a real permittivity ranging from about 6.0 to about 18.0 at frequencies of about 0.1 GHz to about 10 GHz. In some embodiments, at frequencies ranging from 0.1 GHz to at least 3.0 GHz and in some embodiments at higher frequencies, the real permittivity is at least 6.0, at least 7.0, at least 8.0, at least 9.0, at least 10.0, at least 11.0, at least 12.0, at least 13.0, at least 14.0, at least 15.0, at least 16.0, or at least 17.0.
In some embodiments, the real permittivity is equal to a real permeability W of the hexaferrite composition to within 10%. In other embodiments, the real permittivity and real permeability can be equal to within 15%, within 5%, within 2%, or within 1%. The hexaferrite composition can have a characteristic impedance matching an impedance of free space within 3%. In other embodiments, the characteristic impedance can match the impedance of free space within 5%, within 2%, or within 1%.
In some embodiments, the magnetic loss tangent tan δμ, ranges from less than 0.1 to about 1.0 at frequencies less than about 3.0 GHz. In some embodiments, at frequencies less than about 0.4 GHz, the magnetic loss tangent is less than 0.3, or less than 0.1. In some embodiments, at frequencies less than about 0.8 GHz, the magnetic loss tangent is less than 0.75, less than 0.5, or less than 0.3. In some embodiments, at frequencies less than about 1.0 GHz, the magnetic loss tangent is less than 0.95, less than 0.6, or less than 0.3. In some embodiments, at frequencies less than about 3.0 GHz, the magnetic loss tangent is less than 2.4 or less than 0.9.
In some embodiments, the hexaferrite composition has a magnetic loss tangent tan δμ, approximately 0.1 at 0.4 GHz. In some embodiments, the hexaferrite composition has a magnetic loss tangent tan δμ less than 0.3 at a frequency of 0.1 to 0.8 GHz. In some embodiments, the hexaferrite composition has a magnetic loss tangent tan δμ, less than 0.95 at a frequency of 0.1 to 3.5 GHz. In some embodiments, the hexaferrite composition has a magnetic loss tangent, tan δμ, ranging from 0.1 to 1.0 over a frequency range of 0.1 to 1.0 GHz.
In some embodiments, the dielectric loss tangent tan δε ranges from less than 0.01 to 0.16 at frequencies less than about 1.0 GHz and in other embodiments at frequencies less than about 10.0 GHz. At frequencies less than about 0.4 GHz, the dielectric loss tangent is less than 0.12 in some embodiments, less than 0.09 in other embodiments, or less than 0.02 in still other embodiments. At frequencies less than about 1.0 GHz, the dielectric loss tangent is less than 0.10 in some embodiments, less than 0.08 in other embodiments, or less than 0.02 in still other embodiments. At frequencies less than about 3.0 GHz, the dielectric loss tangent is less than 0.07 in some embodiments.
In some embodiments, the hexaferrite composition has a dielectric loss tangent, tan δε, less than 0.02 at a frequency of 0.1 to 0.8 GHz. In some embodiments, the hexaferrite composition has a dielectric loss tangent, tan δε, less than 0.16 at a frequency of 0.1 to 1.0 GHz.
The hexaferrite composition has a low dielectric loss factor and magnetic loss factor within the high frequency range. In some embodiments, the hexaferrite composition has a dielectric loss factor tan δε/ε′ less than 0.001 and a magnetic loss factor tan δμ/μ′ less than 0.03 at a frequency of 0.8 GHz.
The hexaferrite composition can be fabricated in any suitable manner. In one embodiment, the hexaferrite composition can be fabricated by providing hexaferrite phase precursor compounds. Suitable precursor compounds can be, for example, oxides or carbonates of Mo, Ba and/or Sr, Co, and Fe. The precursor compounds are ground into small particle sizes and mixed, and then calcined in air to form a material comprising a Z-type hexaferrite phase. Grinding the materials into small sizes and mixing for a long time results in smaller particle sizes, which can aid in lowering the temperatures and energies needed to form the hexaferrite phases. The particle sizes can be reduced by successive rounds of grinding, mixing, and sintering with sieving after each stage to ensure the reduction of particle size. The time required to reduce particle size to a suitable range is a function of powder to ball mass ratio, ball and cylinder material, and solvent used (if any). A suitable particle size ranges from 0.1 μm to 100 μm, with tens of microns in effective diameter being typical. The material resulting after calcination can be ground to form a powder mixture that can be pressed and sintered to form a dense solid body. The resulting material can be ground and annealed in flowing oxygen gas to enhance phase oxygen stoichiometry that would improve magnetic properties.
In some embodiments, a mixture of MoO2, BaCO3, SrCO3, Co3O4, and Fe2O3 is provided. The amounts can be mixed in proportion determined by the desired nominal stoichiometry. In some embodiments, the amounts can be 0 to 0.96 wt. % MoO2, 22.10 to 22.18 wt. % BaCO3, 6.02 to 6.59 wt. % Co3O4, and 70.35 to 71.8 wt. % Fe2O3.
The materials can be mixed with a solvent and ground in a ball mill or other suitable mixing device, such as, without limitation, a roller mix, a shaker mill, or a plenary mill, using a variety of ball and cylinder materials. In one embodiment, the materials are mixed in an agate jar at 400 rpm for 3 hours using a 4 station planetary ball mill. The materials are mixed in nominal ratios of oxides and carbonates to mixing balls to solvent: 1:(1-2):(1-2) wt. %. The solvent can be, for example and without limitation, water, including distilled water or deionized water, toluene, or an alcohol, including for example and without limitation, ethyl alcohol or a reagent grade alcohol (which in some embodiments, is 90% ethyl alcohol, 5% methyl alcohol, and 5% isopropyl alcohol). In some embodiments, no solvent need be used.
The resulting mixture can be dried at 200 to 300° C. for 3 to 10 hours in a convection oven and then pressed into a suitable form to increase its density. In one embodiment, the material can be uni-axially pressed to a 1-inch disk at 0.1 to 0.3 tonne/cm2 in a die set. Higher pressures can be used, depending on the press used. The pressure can be selected to achieve a suitable densification after sintering. Typically a densification in excess of 90% after sintering is suitable.
The materials can be calcined in air to form the Z-type hexaferrite phase. In some embodiments, the materials can be calcined at 1000 to 1300° C. In some embodiments, the following calcination temperature profile can be used:
1) starting at an ambient temperature (e.g., ˜20° C.), ramp to 1200° C.±100° C. over a period of 240 minutes±60 minutes;
2) dwell at 1200° C.±100° C. for a period of 300 minutes ±60 minutes;
3) allow the furnace to cool to ambient, for example, over a period of 240 minutes±60 minutes.
The resulting calcined ferrites can be crushed and passed through a #40 sieve to separate the particles by size. The smaller particles and a solvent (e.g., alcohol or water, as noted above) can be ground, for example, in a ball mill and dried. The resulting powder mixture can be pressed into a compact, with the addition of a binder to assist in maintaining the compact shape. In some embodiments, polyvinyl alcohol ranging from 8 to 12% by weight of the powder mixture can be used as the binder. Other suitable binders include methyl cellulose, polyethylene glycol, or poly(alkylene carbonate). The binder burns off during subsequent sintering.
The compact can be sintered in a furnace, such as a tube furnace, for a suitable time at a suitable temperature. In some embodiments, the compact can be sintered at 1200 to 1280° C. In some embodiments, the compact can be sintered for 4 to 20 hours. The compact can be sintered in an oxygen atmosphere in a tube furnace to help decrease dielectric loss. For example, O2 gas can flow in at a rate of 0.5 to 2.0 L/min throughout the process. In some embodiments, the following sintering temperature profile can be used:
1) starting at an ambient temperature (e.g., ˜20° C.), ramp up to 800° C.±100° C. over a period of 180 minutes±60 minutes;
2) ramp up to 1200° C.±100° C. over a period of 180 minutes±60 minutes;
3) dwell at 1200° C.±100° C. for a period of 240 minutes±60 minutes;
4) allow the furnace to cool to ambient, for example, over a period of 480 minutes±60 minutes.
The sintered hexaferrites can be crushed, sieved through a #100 sieve, ground with a solvent (as noted above), and dried. The resulting powder can be annealed in a flow of O2 gas. In some embodiments, the resulting powder can be annealed at 800 to 1000° C. In some embodiments, the following annealing temperature profile can be used, with O2 gas flowing at 0.2 to 2.0 L/min during the entire annealing process:
1) starting at an ambient temperature (e.g., ˜20° C.), ramp up to 400° C.±100° C. over a period of 80 minutes±10 minutes;
2) ramp up to 900° C.±100° C. over a period of 200 minutes±100 minutes;
3) dwell at 900° C.±100° C. for a period of 240 minutes ±100 minutes;
4) allow the furnace to cool to ambient, for example, over a period of 360 minutes±100 minutes.
In other embodiments, the powder mixture can be formed by mechanisms such as tape casting or additive manufacturing prior to the sintering steps described herein.
The permeability, permittivity and resonance frequency of the Co2Z hexaferrites described herein can be tailored by substitution with Mo, Sr, and Ba ions. These Mo-doped Co2Z hexaferrites are accordingly desirable candidates for microwave magnetodielectric substrate materials operating at 0.3-10 GHz. The compositions can exhibit a high permeability (μ′>8) over a high operating frequency (0.1 to 1 GHz and greater). Equal or substantially equal values of permeability and permittivity can be achieved, with both μ′ and greater than 7 or, in some embodiments, greater than 8 at f=0.8 GHz, leading to matched impedance. The compositions can have low magnetic and dielectric loss factors, for example, of tan δμ/μ′=0.03 and tan δε/ε′=0.001 at f=0.8 GHz. Material costs are low compared to, for example, Ir-doped hexaferrites.
The hexaferrite composition can be used for a variety of devices operable within the high frequency range, such as an ultra-high frequency or microwave antenna, filter, inductor, circulator, or phase shifter. In some embodiments, the device can be operable at frequencies greater than 0.1 GHz, in some embodiments at frequencies greater than 0.3 GHz, and in some embodiments at frequencies greater than 0.5 GHz. In some embodiments, the device can be operable at frequencies up to 1.0 GHz, up to 1.5 GHz, up to 3.0 GHz, or up to 10.0 GHz. For example, in some embodiments the device can be operable over a frequency range of 0.1 to 1.5 GHz. In some embodiments, the device can be operable over a frequency range of 0.3 to 1.0 GHz. In some embodiments, the device can be operable over a frequency range of 0.3 to 0.5 GHz. In some embodiments, the device can be operable over a frequency range of 0.5 to 1.0 GHz.
In some devices, two or more hexaferrite compositions can be employed, the hexaferrite compositions having different cutoff frequencies, to provide operation over a greater frequency range. For example, an antenna device can employ a Mo-doped BaCo2Z hexaferrite operable over a lower frequency range, such as 0.1 to 0.5 GHz, and a Mo-doped SrCo2Z hexaferrite operable over a higher frequency range, such as greater than 0.5 to 1.5 GHz.
Such devices can be used in commercial and military applications, weather radar, scientific communications, mobile and wireless communications, vehicles, aircraft communications, space communications, satellite communications, and surveillance.
The hexaferrite composition can be used in spintronics applications, such as giant magnetoresistant (GMR) devices and giant tunneling magnetoresistant (TMR) devices used in, for example, disk drive read heads and other data storage and memory devices and in magnetic sensors. Other spintronic applications include semiconductor devices, such as spin transistors and spin light emitting diodes.
Polycrystalline Co2Z hexaferrites, having the composition Ba3Co2+xMoxFe24-2xO41, where x=0, 0.01, 0.02, 0.05, 0.08, 0.10, 0.12, 0.15 and 0.20, were prepared by a two-step ceramic process. Starting materials of BaCO3, MoO2, Co3O4, and Fe2O3 were calcined in air for 6 hours at 1000° C., and then crushed and ball milled. The mixture, comprising 90 v % ferrite fine powders and 10 v % polyvinyl alcohol (PVA) binder, was pressed into a toroid with an outer diameter of 7 mm, inner diameter of 3 mm, and width of about 2 mm. This sample size is adequate for microwave measurements. Since oxygen atmosphere can help decrease the dielectric loss, the hexaferrite samples were sintered at 1200 to 1280° C. for 4 to 20 hours in oxygen as a final process step. (An annealing step, typically used to establish oxygen stoichiometry, was not used due to the long, 20-hour, heat treatment step.) Eight samples, listed with a corresponding identifying code ZM0 to ZM8, correspond to the inclusion of Mo in the Co2Z hexaferrites as listed below.
Crystallographic structure was determined by X-ray diffraction (XRD, Philips X′ pert PRO) measurements at room temperature in a θ-2θ geometry using CuKa radiation. The complex permittivity and permeability spectra were measured over a frequency range from 0.3-10 GHz by using an Agilent E864A 45 MHz-50 GHz PNA series vector network analyzer (VNA) with a 7 mm HP 85050C precision airline and Agilent Impedance Analyzer (IA) for a toroid sample at f=0.05 to 1.0 GHz. Morphology was scanned by scanning electron microscopy (SEM).
Results
1. Mo-Dependence of Permeability Spectra for Co2Z Hexaferrites
Changes in the real permeability with varying Mo (Mo4+ ion) content (x) of Co2Z hexaferrite are depicted in
The magnetic loss tangent is less than 0.1 at f<0.4 GHz, and equal to 0.5 at f=1.0 GHz for x=0.12, as shown in
2. Mo-Dependence of Permittivity Spectra with Frequency for Co2Z Hexaferrites
Real permittivity can be tailored to range from ε′=˜7.5 to >12 with molybdenum content over a frequency range of 0.1 to 10.0 GHz as shown in
For the samples ZM5 (x=0.10) and ZM6 (x=0.12), the dielectric loss tangent remained very low, <0.02 over a wide frequency range of f=0.1 to 10.0 GHz, as shown in
For x>0.05, the dielectric loss tangent decreases with molybdenum content at f=0.8 GHz, as shown in
3. Samples with High Permeability and low Magnetic and Dielectric Losses at f=0.1-1 GHz
The frequency dependence of the permeability, permittivity and magnetic and dielectric loss tangents of the samples ZM5 and ZM6 is depicted in
4. Measurement of Magnetic Spectra by Impedance Analyzer The magnetic spectra of the samples ZM5 and ZM6 were measured by the impedance analyzer over a frequency range from 0.1 to 1 GHz, as shown in
Table 3 lists major parameters measured by the VNA and IA, indicating a measuring error of less than 1% at 0.8 GHz.
5. SEM Morphology
6. Comparison in Permeability, Permittivity, Loss Tangent and Grain Size with Existing Magnetodielectric Materials.
Table 4 presents a comparison of ε′, tan μ′, tan δε and tan δμ for Mo-doped and Ir-doped Co2Z hexaferrites at 0.8 GHz with existing Ir-doped Co2Z hexaferrites. The Mo-doped Co2Z hexaferrites are the samples ZM5 and ZM6.
The Mo-doped Co2Z hexaferrites show enhanced permeability by 25 to 37%, compared to that of Ir-doped Co2Z hexaferrites. Also, the Mo-doped Co2Z hexaferrites reveal much lower dielectric loss tangents (<0.01), whereas Ir-doped Co2Z hexaferrite has a dielectric loss tangent of 0.07 at 0.8 GHz. The Mo-doped Co2Z hexaferrites show a magnetic loss tangent of 0.36, which is close to that of Ir-doped Co2Z hexaferrite, 0.25 to 0.30 at 0.8 GHz.
In summary, polycrystalline hexaferrite compositions of nominal composition Ba3Co2+xMoxFe24-2xO41, where x=0 to 0.20, were prepared by ceramic processes. The results show that Mo-doped Co2Z polycrystalline hexaferrites have permeabilities, permittivities, and magnetic and dielectric losses that are superior to those of existing Ir-doped Co2Z hexaferrites over a wide frequency range of 0.1 to 5.0 GHz. The measured microwave dielectric and magnetic properties showed that the loss tan δε and loss tan δμ were decreased by 75% and 60% at 0.8 GHz with the addition of molybdenum having x=0.10 to 0.15, respectively, whereas the permeability was increased to 10.1 at 0.8 GHz, enhanced by 25%, in comparison to the Ir-doped Co2Z hexaferrites. Additionally, the Mo-doped Co2Z hexaferrites also demonstrate a substantially equivalent value of real permittivity and permeability (8 to 9) over the frequency range of 0.1 to 1.0 GHz to make the characteristic impedance the same as that of the free space impedance. Notably, the Mo-doped Co2Z hexaferrites not only give rise to the lowest loss factors (tan δε/ε′<0.00075 and tan δμ/μ′<0.029) among those reported previously, but also have low material cost. The material cost of Mo-doped Co2Z hexaferrite can be one third of that of Ir-doped Co2Z hexaferrite. These properties make these hexaferrites suitable for applications in microwave devices at ultra-high frequency (UHF), such as miniature antennas.
Polycrystalline hexaferrites having a non-stoichiometric composition with the formula (BazSr(3-z))Co(2+x)MoxFe(y-2x)O41 were produced. Table 5 lists the non-stoichiometric formulas for several samples that were prepared and tested.
The fabrication process began with the following raw materials and their purities: BaCO3 (99.95%), SrCO3 (99.95%), Co3O4 (99.7%), MoO2 (99%), and Fe2O3 (99.95%). The ratio of each was selected to be consistent with the targeted nominal compositions. For example, the hexaferrite phase precursor compounds can comprise 0 to 0.96 wt. % MoO2, 22.10-22.18 wt. % BaCO3, 6.02-6.59 wt. % Co3O4, and 70.35-71.8 wt. % Fe2O3.
The materials were mixed with reagent alcohol as a solvent and ground in an agate jar and ball mixer at 400 rpm for 3 to 10 hours using a 4-station planetary ball mill. The mixture was dried at 200 to 300° C. for 3 to 10 hours in a convection oven and pressed to a 1-inch disk at 0.1 to 0.3 T/cm2 in a die-set. The disk was calcined in air to form the Z-type hexaferrite phase according to the following temperature profile: 1) ramp up over 240 minutes to 1200° C.; 2) dwell for 300 minutes at 1200° C.; 3) cool over 240 minutes to 20° C.
The material was then crushed and sieved through a #40 sieve. The smaller particles passing through the sieve were ground with a reagent alcohol solvent in an agate jar and ball mixer at 400 rpm for 4 to 20 hours using a 4-station planetary ball mill. The mixture was dried at 200 to 300° C. for 3 to 10 hours in a convection oven and pressed to a 1-inch disk at 0.5 to 2.0 T/cm2. The disk was sintered according to the following temperature profile: 1) ramp up over 180 minutes to 800° C. with O2 gas at a flow rate of 0.7 L/min; 2) ramp up over 180 minutes to 1200° C.; 3) dwell for 240 minutes at 1200° C.; 4) cool over 480 minutes to 20° C. with O2 gas flowing.
The sintered material was then crushed and sieved through a #100 sieve. The crushed material passing through the sieve was ground with a reagent alcohol solvent in an agate jar and ball mixer at 400 rpm for 4 to 20 hours using a 4-station planetary ball mill. The resulting powder was dried at 200 to 300° C. for 3 to 10 hours in a convection oven. The powder was annealed according to the following temperature profile, with O2 gas flowing the entire time: 1) ramp up over 80 minutes to 400° C.; 2) ramp up over 200 minutes to 900° C.; 3) dwell for 240 minutes at 900° C.; 4) cool over 360 minutes to 20° C.
Table 6 presents a summary of the results of real permittivity, real permeability, loss tangent, tan δε, and loss tangent, tan δμ, for the four samples at two different frequencies 0.8 GHz and 1.0 GHz.
The best sample was ZSF4. It exhibited a high permeability, ε′=8.67, and low loss tangent, tan δμ=0.091, at 1.0 GHz, and a high cutoff frequency, fr=2.40 GHz.
Polycrystalline Co2Z hexaferrites, having the composition Sr3Co2+xMoxFe24-2xO41, where x=0, 0.02, 0.05, 0.08, 0.10, 0.12, 0.15 and 0.20, were prepared by the two-step ceramic process described above in Example 1, using as starting materials SrCO3, MoO2, Co3O4, and Fe2O3.
Results
1. Magnetic Permeability Spectra and Magnetic Loss
The permeability spectra were measured over frequencies of 0.1 to 10.0 GHz. The permeability exhibits a decrease from 3.8 to 3.3 at low frequency (0.1 GHz) with Mo content, except for a Mo content of x=0.10, as seen in
2. Permittivity Spectra and Dielectric Loss
The permittivity is basically proportional to the Mo content in SrCo2Z hexaferrites and decreases slightly for x=0.02, as seen in
3. Magnetic and Dielectric Loss
The lowest magnetic and dielectric loss in Mo-doped SrCo2Z hexaferrites were exhibited at a Mo content of x=0.10. At this Mo content, at f=1.0 GHz:
μ′=3.7
tan δμ=0.24
ε′=14.2; and
tan δε=0.03.
In summary, MoO2 can suitably be used to reduce magnetic loss in SrCo2Z hexaferrites.
As used herein, “consisting essentially of” allows the inclusion of materials or steps that do not materially affect the basic and novel characteristics of the claim. Any recitation herein of the term “comprising”, particularly in a description of components of a composition or in a description of elements of a device, can be exchanged with “consisting essentially of” or “consisting of”.
It will be appreciated that the various features of the embodiments described herein can be combined in a variety of ways. For example, a feature described in conjunction with one embodiment may be included in another embodiment even if not explicitly described in conjunction with that embodiment.
The present invention has been described in conjunction with certain preferred embodiments. It is to be understood that the invention is not limited to the exact details of construction, operation, exact materials or embodiments shown and described, and that various modifications, substitutions of equivalents, alterations to the compositions, and other changes to the embodiments disclosed herein will be apparent to one of skill in the art.
This application claims priority under 35 § 119(e) of U.S. Provisional Application No. 62/110,025 filed on Jan. 30, 2015, entitled “Low Cost, Low Loss and High Permeability MO—CO2Z Ferrites For UHF, L-Band and S-Band Applications”, the disclosure of which is hereby incorporated by reference.
This application is a National Stage application of PCT/US16/015888, filed Feb. 1, 2016, which claims the benefit of U.S. Provisional Application No. 62/110,025, filed Jan. 30, 2015, both of which are incorporated by reference in their entirety herein.
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| WO2016/123598 | 8/4/2016 | WO | A |
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