The present disclosure relates to the field of power electronic technology and voltage sourced converter based high voltage direct current transmission (VSC-HVDC), and more particularly, to a modeling method and system for a diode clamped cascaded multi-level converter.
The diode clamped cascaded multi-level converter has a self-cleaning capability for DC fault, and has same advantages as a half-bridge cascaded multi-level converter, for example, it has a low harmonic content and can be easily extended. Therefore, it is applicable to the VSC-HVDC involved a long-distance, high capacity and overhead line.
Each bridge arm of the cascaded multi-level converter is made up of a large number of power modules required to be controlled independently. When an electromagnetic transient is modeled and simulated with a PSCAD (Power System Computer Aided Design, which is a graphical user interface of an Electro Magnetic Transient in DC System (EMTDC))/EMTDC (which is a power system simulation and analysis software), actions of each power module is needed to be simulated accurately. A traditional way is to use device models provided by a component library of the PSCAD/EMTDC, and to establish a simulation model of the cascaded multi-level converter. When the number of the power modules is few, the simulation efficiency may be acceptable, but will be sharply reduced in the wake of the increasing of the power modules. In particular, when there are hundreds or thousands of the power modules, the simulation efficiency may not satisfy requirements of engineering research and development. Hence, in order to improve the simulation efficiency, many simulation modules of the cascaded multi-level converter for different simulation situations have been developed. However, these simulation modules are generally directed to a half-bridge or full-bridge cascaded multi-level converter only. There is no high-efficiency simulation module directed to the diode clamped cascaded multi-level converter. The existing simulation modules cannot satisfy the requirements on engineering parameter design and control strategy validation of the VSC-HVDC involved a long-distance, high capacity and overhead line.
On the basis of this background, it is necessary to provide a method and system capable of simulating a diode clamped cascaded multi-level converter, based on the diode clamped cascaded multi-level converter.
A modeling method for a diode clamped cascaded multi-level converter is provided. The diode clamped cascaded multi-level converter includes at least two bridge arms. Each bridge arm includes a power module string made up of at least two cascaded power modules, and a bridge-arm reactor cascaded to the power module string. Each power module includes a first switching tube, a first diode, a second switching tube, a second diode, a third switching tube, a third diode, a fourth diode, a first capacitor and a second capacitor. The first switching tube and the first diode are coupled in an anti-parallel configuration. The second switching tube and the second diode are coupled in an anti-parallel configuration. The third switching tube and the third diode are coupled in an anti-parallel configuration. A cathode of the first diode is connected to a positive electrode of the first capacitor, and a negative electrode of the first capacitor is connected to a positive electrode of the second capacitor and a cathode of the fourth diode respectively. An anode of the fourth diode is connected to a cathode of the third diode, with a connection point as a negative output terminal of the power module. An anode of the third diode is connected to an anode of the second diode and a negative electrode of the second capacitor respectively. A cathode of the second diode is connected to an anode of the first diode, with a connection point as a positive output terminal of the power module. The modeling method includes:
transforming all first diodes of each bridge arm to be equivalent to a first auxiliary diode, transforming all second diodes of each bridge arm to be equivalent to a second auxiliary diode, transforming all third diodes of each bridge arm to be equivalent to a third auxiliary diode, and transforming all fourth diodes of each bridge arm to be equivalent to a fourth auxiliary diode;
transforming all first capacitors of each bridge arm to be equivalent to a first controlled voltage source, and transforming all second capacitors of each bridge arm to be equivalent to a second controlled voltage source; and
transforming the power module string of each bridge arm to be equivalent to an equivalent module, wherein the equivalent module includes a loss resistor and a composite equivalent model connected to the loss resistor in series, and the composite equivalent model includes the first auxiliary diode, the second auxiliary diode, the third auxiliary diode, the fourth auxiliary diode, the first controlled voltage source and the second controlled voltage source.
For the above modeling method for the diode clamped cascaded multi-level converter, since a plurality of components respectively placed at a same position in the corresponding power module of each bridge arm of the diode clamped cascaded multi-level converter can be equivalent to one component, the order of the node voltage equation can be reduced when simulating the diode clamped cascade multi-level converter in the PSCAD/EMTDC software, and the simulation efficiency can be improved, and cannot be reduced with the increasing of the power modules. By means of the modeling method, the requirements on engineering parameter design and control strategy validation of the VSC-HVDC involved a long-distance, high capacity and overhead line can be satisfied.
A modeling system for a diode clamped cascaded multi-level converter is provided. The diode clamped cascaded multi-level converter includes at least two bridge arms. Each bridge arm includes a power module string made up of at least two cascaded power modules, and a bridge-arm reactor cascaded to the power module string. Each power module includes a first switching tube, a first diode, a second switching tube, a second diode, a third switching tube, a third diode, a fourth diode, a first capacitor and a second capacitor. The first switching tube and the first diode are coupled in an anti-parallel configuration. The second switching tube and the second diode are coupled in an anti-parallel configuration. The third switching tube and the third diode are coupled in an anti-parallel configuration. A cathode of the first diode is connected to a positive electrode of the first capacitor, and a negative electrode of the first capacitor is connected to a positive electrode of the second capacitor and a cathode of the fourth diode respectively. An anode of the fourth diode is connected to a cathode of the third diode, with a connection point as a negative output terminal of the power module. An anode of the third diode is connected to an anode of the second diode and a negative electrode of the second capacitor respectively. A cathode of the second diode is connected to an anode of the first diode, with a connection point as a positive output terminal of the power module. The modeling system includes:
a diode equivalent module configured to transform all first diodes of each bridge arm to be equivalent to a first auxiliary diode, transform all second diodes of each bridge arm to be equivalent to a second auxiliary diode, transform all third diodes of each bridge arm to be equivalent to a third auxiliary diode, and transform all fourth diodes of each bridge arm to be equivalent to a fourth auxiliary diode;
a capacitor equivalent module configured to transform all first capacitors of each bridge arm to be equivalent to a first controlled voltage source, and transform all second capacitors of each bridge arm to be equivalent to a second controlled voltage source; and
a bridge-arm equivalent module configured to transform the power module string of each bridge arm to be equivalent to an equivalent module, wherein the equivalent module includes a loss resistor and a composite equivalent model connected to the loss resistor in series, and the composite equivalent model includes the first auxiliary diode, the second auxiliary diode, the third auxiliary diode, the fourth auxiliary diode, the first controlled voltage source and the second controlled voltage source.
For the above modeling system for the diode clamped cascaded multi-level converter, since a plurality of components respectively placed at same position in the corresponding power module of each bridge arm of the diode clamped cascaded multi-level converter can be equivalent to one component, the order of the node voltage equation can be reduced when simulating the diode clamped cascade multi-level converter under PSCAD/EMTDC software, and the simulation efficiency can be improved, and cannot be reduced with the increasing of the power modules. By means of the modeling method, the requirements on engineering parameter design and control policy validation of the VSC-HVDC involved a long-distance, high capacity and overhead line can be satisfied.
In order to make it easier to be understood, the present disclosure will be described in further details with the accompanying drawings. The preferred embodiments of the present disclosure are illustrated in the drawings. The present disclosure can be realized through various modifications, not to limit the specific embodiments described herein. Conversely, the specific embodiments provided herein are merely to make the present disclosure be understood more clearly and comprehensively.
All of the technologies and the scientific terminologies used herein have the same implication with the ordinary meaning of those skilled in the art unless otherwise indicated. The terminologies used herein are merely to describe the specific embodiments of the present disclosure, but not to limit the present disclosure. The terms “or/and” used herein may include any one of the multiple corresponding items, or any combination thereof.
Referring to
Referring to
S100, transforming all first diodes D1 of each bridge arm to be equivalent to a first auxiliary diode SD1, transforming all second diodes D2 of each bridge arm to be equivalent to a second auxiliary diode SD2, transforming all third diodes D3 of each bridge arm to be equivalent to a third auxiliary diode SD3, and transforming all fourth diodes D4 of each bridge arm to be equivalent to a fourth auxiliary diode SD4, wherein each first diode D1 is positioned at a same position in its corresponding power module, each second diode D2 is positioned at a same position in its corresponding power module, each third diode D3 is positioned at a same position in its corresponding power module, and each fourth diode D4 is positioned at a same position in its corresponding power module;
S300, transforming all first capacitors C1 of each bridge arm to be equivalent to a first controlled voltage source V1, transforming all second capacitors C2 of each bridge arm to be equivalent to a second controlled voltage source V2, wherein each first capacitor C1 is positioned at a same position in its corresponding power module, and each second capacitor C2 is positioned at a same position in its corresponding power module; and
S500, transforming the power module string M of each bridge arm to be equivalent to a equivalent module, wherein the equivalent module includes a loss resistor and a composite equivalent model Eq connected to the loss resistor in series.
The composite equivalent model Eq may include the first auxiliary diode SD1, the second auxiliary diode SD2, the third auxiliary diode SD3, the fourth auxiliary diode SD4, the first controlled voltage source V1 and the second controlled voltage source V2.
For the above modeling method for the diode clamped cascaded multi-level converter, since a plurality of components respectively placed at a same position in the corresponding power module of each bridge arm of the diode clamped cascaded multi-level converter can be equivalent to one component, the order of the node voltage equation can be reduced when simulating the diode clamped cascade multi-level converter in the PSCAD/EMTDC software, and the simulation efficiency can be improved, and cannot be reduced with the increasing of the power modules. By means of the modeling method, the requirements on engineering parameter design and control policy validation of the VSC-HVDC involved a long-distance, high capacity and overhead line can be satisfied.
Continue to referring to
When the diode clamped cascaded multi-level converter is in a latching mode, the first auxiliary switch K1 and the second auxiliary switch K2 are in an “off state”. The voltage value of the first controlled voltage source V1 may be contributed by all first capacitors C1 in all power modules of each corresponding bridge arm, while the voltage value of the second controlled voltage source V2 may be contributed by all second capacitors C2 in all power modules of each corresponding bridge arm.
When the diode clamped cascaded multi-level converter is in a normal operation mode, the first auxiliary switch K1 and the second auxiliary switch K2 are in an “on state”. The voltage value of the first controlled voltage source V1 may be contributed by the first capacitors C1 in the on-state power modules of each corresponding bridge arm, and the voltage value of the second controlled voltage source V2 may be contributed by the second capacitors C2 in the on-state power modules of each corresponding bridge arm.
The latching mode and the normal operation mode of the diode clamped cascade multi-level converter can be simulated by the model established by means of adopting the above modeling method, and the simulation effect has a better simulation precision as compared with the modeling method which is only capable of simulating one operation mode.
In one embodiment, the loss resistor R may be connected to the positive output terminal PO of the composite equivalent model Eq, such that a terminal of the loss resistor R not connected to the composite equivalent model Eq may be used as a positive output terminal of the equivalent module of the power module string M. The negative output terminal NO of the composite equivalent model Eq may be used as a negative output terminal of the equivalent module. In another embodiment, the loss resistor R may be connected to the negative output terminal NO of the composite equivalent model Eq, such that a terminal of the loss resistor R not connected to the composite equivalent model Eq may be used as the negative output terminal of the equivalent module of the power module string. The positive output terminal PO of the composite equivalent model Eq may be used as the positive output terminal of the equivalent module.
Referring to
S310, acquiring electrical information of each power module of the corresponding bridge arm.
S320, determining a first historical current value of the first capacitor C1 and a second historical current value of the second capacitor C2 in each power module of the corresponding bridge arm in the present simulation step, based on the electrical information.
In one embodiment, the electrical information may include: a simulation step indicated by Δt; a capacitance value of the first capacitor and a capacitance value of the second capacitor, both being equivalent and indicated by C; a total number of the power modules, indicated by N; a serial number of one of the power modules, indicated by i; a first current value and a first voltage value of the first capacitor in a ith power module of the corresponding bridge arm in a previous simulation step just before the present simulation step, indicated by IC1i(t−Δt) and UC1i(t−Δt) respectively; and a second current value and a second voltage value of the second capacitor in the ith power module of the corresponding bridge arm in the previous simulation step, indicated by IC2i(t−Δt) and UC2i(t−Δt) respectively.
The equations for determining the first historical current value and the second historical current value are as follows:
I
CD1i(t)=−IC1i(t−Δt)−UC1i(t−Δt)/RCD (1)
I
CD2i(t)=−IC2i(t−Δt)−UC2i(t−Δt)/RCD (2)
where RCD=Δt/C, ICD1i(t) denotes the first historical current value, and ICD2i(t) denotes the second historical current value.
S330, determining a first current value of the first capacitor C1 and a second current value of the second capacitor C2 in each power module of the corresponding bridge arm in the present simulation step, based on the electrical information, the first historical current value and the second historical current value.
In one embodiment, the electrical information may further include: a bridge-arm current value of the corresponding bridge arm in the present simulation step, indicated by IARM(t); a leakage resistance of the first capacitor and a leakage resistance of the second capacitor of each power module of the corresponding bridge arm, indicated by RP; and a switching state of the first switching tube, a switching state of the second switching tube and a switching state of the third switching tube of the ith power module of the corresponding bridge arm in the previous simulation step, indicated by S1i(t−Δt), S2i(t−Δt) and S3i(t−Δt) respectively, wherein if the value of the switching state is 1, the corresponding switching tube is switched on, and if the value of the witching state is 0, the corresponding switching tube is switched off.
The equations for determining the first current value and the second current value are as follows:
where IC1i(t) denotes the first current value, and IC2i(t) denotes the second current value.
S340, determining a first voltage value of the first capacitor C1 and a second voltage value of the second capacitor C2 in each power module of the corresponding bridge arm in the present simulated step respectively, based on the electrical information.
In one embodiment, the equations for determining the first voltage value and the second voltage value are as follows:
U
C1i(t)=UC1i(t−Δt)+RCD[IC1i(t)+IC1i(t−Δt)] (5)
U
C2i(t)=UC2i(t−Δt)+RCD[IC2i(t)+IC2i(t−Δt)] (6)
where UC1i(t) denotes the first voltage value, and UC2i(t) denotes the second voltage value.
S350, determining a first contribution value of the first capacitor C1 and a second contribution value of the second capacitor C2 in each power module of the corresponding bridge arm in the present simulation step, based on the electrical information, the first current value, the second current value, the first voltage value and the second voltage value.
In one embodiment, the electrical information may further include a switching state of the first switching tube S1, a switching state of the second switching tube S2 and a switching state of the third switching tube S3 of the ith power module of the corresponding bridge arm in the present simulation step, indicated by S1i(t), S2i(t) and S3i(t) respectively. If the value of the switching state is 1, the corresponding switching tube is switched on, and if the value of the witching state is 0, the corresponding switching tube is switched off.
The equations for determining the first contribution value and the second contribution value are as follows:
where UM1i(t) denotes the first contribution value, and UM2i(t) denotes the second contribution value.
S360, determining a voltage value of the first controlled voltage source V1 based on the first contribution values of all power modules of the corresponding bridge arm, determining a voltage value of the second controlled voltage source V2 based on the second contribution values of all power modules of the corresponding bridge arm, and determining an internal resistance value of the first controlled voltage source V1 and an internal resistance value of the second controlled voltage source V2 based on the electrical information.
In one embodiment, the equations for determining the voltage values of the first controlled voltage source V1 and the second controlled voltage source V2 are as following:
where U1(t) denotes the voltage value of the first controlled voltage source, and U2(t) denotes the voltage value of the second controlled voltage source.
The equation for determining the internal resistance values of the first controlled voltage source V1 and the second controlled voltage source V2 is as follows:
where R1(t) denotes the resistance value of the first controlled voltage source V1, R2(t) denotes the resistance value of the second controlled voltage source V2, and not indicates a logic negation operation which is a operation to reverse S21i(t).
Referring to
a diode equivalent module 100, configured to transform all first diodes D1 of each bridge arm to be equivalent to a first auxiliary diode SD1, transform all second diodes D2 of each bridge arm to be equivalent to a second auxiliary diode SD2, transform all third diodes D3 of each bridge arm to be equivalent to a third auxiliary diode SD3, and transform all fourth diodes D4 of each bridge arm to be equivalent to a fourth auxiliary diode SD4;
a capacitor equivalent module 300, configured to transform all first capacitors C1 of each bridge arm to be equivalent to a first controlled voltage source V1, and transform all second capacitors C2 of each bridge arm to be equivalent to a second controlled voltage source V2; and
a bridge-arm equivalent module 500, configured to transform a power module string M of each bridge arm to be equivalent to an equivalent module, wherein the equivalent module may include a loss resistor and a composite equivalent model Eq connected to the loss resistor in series, and the composite equivalent model Eq may include the first auxiliary diode SD1, the second auxiliary diode SD2, the third auxiliary diode SD3, the fourth auxiliary diode SD4, the first controlled voltage source V1 and the second controlled voltage source V2.
Continue to referring to
Referring to
an electrical information acquiring unit 310, configured to acquire the electrical information of each power module of the corresponding bridge arm;
a historical current determining unit 320, configured to determine a first historical current value of the first capacitor C1 and a second historical current value of the second capacitor C2 in each power module of the corresponding bridge arm in the present simulation step based on the electrical information;
a present current determining unit 330, configured to determine the first current value of the first capacitor C1 and the second current value of the second capacitor C2 in each power module of the corresponding bridge arm in the present simulation step, based on the electrical information, the first historical current value and the second historical current value;
a present voltage determining unit 340, configured to determine a first voltage value of the first capacitor C1 and a second voltage value of the second capacitor C2 in each power module of the corresponding bridge arm based on the electrical information;
a capacitance contribution determining unit 350, configured to determine a first contribution value of the first capacitor C1 and a second contribution value of the second capacitor C2 in each power module of the corresponding bridge arm in present simulation step, based on the electrical information, the first current value, the second current value, the first voltage value and the second voltage value; and
a controlled voltage source determining unit 360, configured to determine a voltage value of the first controlled voltage source V1 based on the first contribution values of all power modules in the corresponding bridge arm, determine a voltage value of the second controlled voltage source V2 based on the second contribution values of all power modules in the corresponding bridge arm, and determine an internal resistance value of the first controlled voltage source V1 and an internal resistance value of the second controlled voltage source V2 based on the electrical information.
In the modeling system, the approach for acquiring the electrical information adopted by the electrical information acquiring unit 310, the approach for determining the first and second historical current values adopted by the historical current determining unit 320, the approach for determining the first and second current values adopted by the present current determining unit 330, the approach for determining the first and second voltage values adopted by the present voltage determining unit 340, the approach for determining the first and second contribution values adopted by the capacitance contribution determining unit 350, and the approach for determining the voltage values and internal resistance values of the first and second controlled voltage source adopted by the controlled voltage source determining unit 360 have been specifically described in the above embodiments of the modeling method, and are not repeatedly described herein.
For the above modeling system for the diode clamped cascaded multi-level converter, since a plurality of components respectively placed at same position in the corresponding power module of each bridge arm of the diode clamped cascaded multi-level converter can be equivalent to one component, the order of the node voltage equation can be reduced when simulating the diode clamped cascade multi-level converter under PSCAD/EMTDC software, and the simulation efficiency can be improved, and cannot be reduced with the increasing of the power modules. By means of the modeling method, the requirements on engineering parameter design and control policy validation of the VSC-HVDC involved a long-distance, high capacity and overhead line can be satisfied.
While various embodiments are discussed therein specifically, it will be understood that they are not intended to limit to these embodiments. It should be understood by those skilled in the art that various modifications and replacements may be made therein without departing from the theory of the present disclosure, which should also be seen in the scope of the present disclosure. The scope of the present disclosure should be defined by the appended claims.
Number | Date | Country | Kind |
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201510574892.0 | Sep 2015 | CN | national |
Filing Document | Filing Date | Country | Kind |
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PCT/CN16/73510 | 2/4/2016 | WO | 00 |