1. Field of Invention
The present invention is related to microwave bandpass filters and more particularly to the realization of compact size conductor-loaded cavity filters for use in space, wireless applications and other applications where size and spurious performance of the bandpass filters are critical.
2. Description of the Prior Art
Microwave filters are key components of any communication systems. Such a system, be it wireless or satellite, requires filters to separate the signals received into channels for amplification and processing. The phenomenal growth in telecommunication industry in recent years has brought significant advances in filter technology as new communication systems emerged demanding equipment miniaturization while requiring more stringent filter characteristics. Over the past decade, the dielectric resonator technology has been the technology of choice for passive microwave filters for wireless and satellite applications.
It is an object of the present invention to provide a novel configuration etc. both single mode and dual mode dielectric resonator filters have been employed for such applications. It is a further object of the present invention to provide a conductor-loaded cavity resonator filter that can be used in conventional and cryogenic applications. It is still another object of the present invention to provide a filter that is compact in size with a remarkable loss spurious performance compared to previous filters.
A microwave cavity has at least one wall. The cavity has a cut resonator located therein, the resonator being out of contact with the at least one wall.
A bandpass filter has at least one cavity. The at least one cavity has a cut resonator therein. The cavity has at least one wall and the resonator is out of contact with the at least one wall.
A method of improving the spurious performance of a bandpass filter, the method comprising a cut resonator in at least one cavity of the filter, the cavity having at least one wall and the resonator being located out of contact with the at least one wall.
In the drawings:
The resonator of
In
With the use of the magnetic wall symmetry concept, a half-cut version of the conductor-loaded resonator with a modified shape can be realized as shown in FIG. 3. The half-cut resonator would have a slightly higher resonant frequency with a size that is 50% of the original dual-mode cavity. The technique proposed in Wang et al “Dual mode conductor-loaded cavity filters” I. EEE Transactions on Microwave Theory and Techniques, V45, N. 8, 1997 can be applied for shaping dielectric resonators to conductor-loaded cavity resonators. In
Table 2 provides the resonant frequencies of the first three modes of the half-cut conductor-loaded resonator. Even though the TM mode has been shifted away, the spurious performance of the resonator has degraded.
Table 3 gives the resonant frequencies of the first three modes of the modified half-cut resonator. A comparison between Tables 2 and 3 illustrates that the spurious performance of the modified half-cut resonator is superior to that of dual-mode resonators. It is interesting to note that shaping the resonator as shown in
It is well known that dielectric resonators filters suffer from limitations in spurious performance and power handling capability. By combining the dielectric resonators with the resonator disclosed in this invention both the spurious performance and power handling capability of dielectric resonator filters can be considerably improved.
A combination of dielectric resonators and conductor-loaded cavity resonators in the same filter improves the spurious performance of dielectric resonator filters over dielectric resonator filters that do not have any conductor-loaded cavity resonators. The use of conductor-loaded cavity resonators in the same filter in combination with dielectric resonators extend the power handling capability of dielectric resonator filters.
Various materials are suitable for the resonators. For example, the resonator can be made of any metal or it can be made of superconductive material either by a thick film coating or bulk superconductor materials or single crystal or by other means. Copper is an example of a suitable metal.
This application claims benefit to U.S. Provisional Application 60/254,109 filed on Dec. 11, 2000.
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Number | Date | Country |
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1215747 | Jun 2002 | EP |
Number | Date | Country | |
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20020130731 A1 | Sep 2002 | US |
Number | Date | Country | |
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60254109 | Dec 2000 | US |