The embodiments described herein relate to the field of power amplifiers, and particularly to a multi-mode (multi-state) power amplifier using a single output switch to control three or more different output impedance levels, and thus to control three or more power outputs.
Conventionally, a three mode linear power amplifier requires multiple output switches to realize three modes. Multiple switches require substantial space (die area), and this is a serious problem. Using a single switch would use about 40% less die area, and will have additional advantages over conventional systems.
Switch(es) are used to change between conductive and non-conductive states. Each switch needs proper sizing to reduce on-state loss, proper logic control and peripheral matching circuits. Reducing the number of switches thus reduces die area.
The present disclosure relates to the realization of a three mode linear power amplifier (PA) with three distinct load impedances for High, Medium, and Low power modes utilizing a single switch on the output. This reduces the average current consumption of the PA and increases handset talk time. Only one switch is needed to control three different load impedance levels. The remaining “switching” results from selectively biasing each PA chain (or path) by turning ON or OFF amplifiers. A series L-C and an FET switch are used to control the load impedance.
In low power mode, the equivalent shunt L is large (relatively) and the effective series capacitance is small (relatively), resulting in a high impedance load. In the medium power mode, the equivalent shunt L is medium and the remaining inductance is connected in series with the chain capacitor, increasing the effective series capacitance and hence lowering the load impedance to a medium impedance load. In the high power mode, the switch is OFF and the load impedance is small.
This invention allows the implementation of a three mode PA in roughly 40% less die area than in the prior art, because only one switch is used. The benefits of this invention include: three impedance levels using a single output switch, simpler logic than a conventional multiple switch three mode PA, low average current, and high power added efficiency (PAE). Additionally, a four (or more) mode PA may be similarly implemented using a single switch. Further, it is possible to implement an embodiment of this invention using no switches.
Those skilled in the art will appreciate the scope of the disclosure and realize additional aspects thereof after reading the following detailed description in association with the accompanying drawings.
The accompanying drawings incorporated in and forming a part of this specification illustrate several aspects of the disclosure, and together with the description serve to explain the principles of the disclosure. The values of various inductors, capacitors, etc. are for illustrative purposes only.
The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the disclosure and illustrate the best mode of practicing the disclosure. Upon reading the following description in light of the accompanying drawings, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims. The term “connected” is defined broadly, and does not require a direct connection. For example a first element connected to a first node permits the existence of another element (such as a resistor) located electrically between the first element and the first node.
Operation of the three modes is discussed briefly here with respect to
Referring to the bottom portion of
The group of elements to the right of point H and below Cchain1 is called an Output Matching Network (OMN). In the example of
Referring to the middle portion of
Referring to the top portion of
As shown in the LPM block at the top right of
From an engineering point of view, the loss in inductor Lchain1 is very important to the performance of the power amplifier. An efficient Lchain1 has a high quality factor (Q) value, and thus has low resistance and low losses.
In the high power mode, only the lower portion of
In medium mode, amplifier Q2M contacts the chain elements (Lchain2=2 nH, Lchain1=0.8 nH, and Cchain1=4 pF) at a location between Lchain2 and Lchain1. Note that values for these chain elements are provided here for illustrative purposes only. The values used in this application pertain to operation at 1.9 GHz.
Inductor Lchain2 has a value of 2 nH. Inductor Lchain1 has a value of 0.8 nH. Capacitor Cchain1 has a value of 4 pF. These chain elements, operating at 1.9 GHz in the medium power configuration, are equivalent to an effective RF circuit comprising an inductor 2 nH and a capacitor of 8 pF, as shown on the right side of the large brace “}” in
In low power mode, amplifier Q2L contacts the chain elements (Lchain2=2 nH, Lchain1=0.8 nH, and Cchain1=4 pF) at a location between Lchain1 and Cchain1.
Amplifiers Q1M and Q2L constitute the low power path, and are ON. Switch SW1 is ON. The other amplifiers (Q1H, Q2H, and Q2M) are OFF.
Inductor Lchain2 has a value of 2 nH. Inductor Lchain1 has a value of 0.8 nH. Capacitor Cchain1 has a value of 4 pF. These elements, operating at 1.9 GHz in the low power configuration, are equivalent to an effective RF circuit comprising an inductor 2.8 nH and a capacitor of 4 pF, as shown on the right side of the large brace “}” in
The notation and design of
In general, an n+1 mode power amplifier of four or more modes may be created using one chain matching capacitor (Cchain1), one RF switch (SW1), one high power mode amplifier (Q_HPM), n additional power mode amplifiers (Q_LPM1 through Q_LPMn), and n additional chain inductors (Lchain1 through Lchainn).
FIRST POWER PATH: The first power path is located at the bottom of
The high (highest) power mode occurs when amplifier Q_HPM is ON (and, of course any other amplifiers in the path of Q_HPM are ON), SW1 is OFF, and the other amplifiers in other paths are preferably all OFF, with the exception that any amplifier which shares the first power path must remain ON. This high power mode corresponds to a low impedance of Z_HPM at the first node.
SECOND POWER PATH: In the second power path, a low (lowest) power mode occurs when amplifier Q_LPM1 is ON (and any other amplifiers in the path of Q_LPM1 are ON), SW1 is ON, and at least one amplifier in each of the other paths is OFF (preferably all amplifiers in the other paths are OFF, except for amplifiers shared by the path including Q_LPM1).
Of course, as illustrated by the above three mode example, any amplifier which is shared by two or more paths must be ON when one of the paths which shares the shared amplifier is active (see Q1M in
For the purpose of clarity and simplicity, we consider the case where there are four modes (n=3) so that no additional chain inductors and no additional power paths are needed relative to
With respect to impedance: Z_HPM<Z_LPMn<Z_LPM2<Z_LPM1.
The order with respect to power is reversed relative to the order of impedance, as follows: first power path>nth power path>third power path>second power path.
THIRD POWER PATH Continuing, the first medium power (second lowest) output mode occurs when amplifier Q_LPM2 is ON, and corresponds to an impedance of Z_LPM2. The claims refer to this output mode as “first medium power mode” for the case when there are four modes. This first medium power mode has more power than the low power mode, but less than the high power mode. This first medium power mode corresponds roughly to the medium power mode of the circuit of
(N+1)TH POWER PATH. The (n+1)th (fourth power path) is described as a second (or nth) medium power mode. This second medium power mode has more power than the first medium power mode, but less than the high power mode. This second medium power mode corresponds roughly to extending the circuit of
To summarize more generally, for a four or more mode power amplifier the load impedances are ordered as follows: Z_HPM<Z_LPMn< . . . <Z_LPM2<Z_LPM1. The order with respect to power is reversed relative to the order with respect to impedance.
The bond wires have some inductance at typical RF frequencies. The use of bond wires increases the quality factor (Q) of the MDLS inductor, which improves the LPM and MPM efficiency due to reduced output matching network losses.
Specifically,
An additional benefit of the MDLS architecture is the ability to control insertion phase changes between modes. The addition of Lchain1 increases the degrees of freedom to reduce the insertion phase change between modes. The example PCS amplifier shown in
Table 2 illustrates average current for various power amplifiers. Specifically, Table 2 compares the average current computed using different statistics for both the bond wire and the printed spiral (MMIC) implementation of the MDLS inductor. Data for a competitor's part is also included in the table. The higher Q of the bond wire implementation reduced the “urban” average current by about 0.5 mA.
The first column is MDLS using a spiral inductor (MMIC Ind), the second column is MDLS using a bonded wire inductor (BW Ind), and the third column is a conventional power amplifier.
The first row is values for average current using standards for simulating an urban environment. The second row is values for simulating a suburban environment. The lowest average current of 19.6 mA is for a bonded wire MDLS power amplifier in an urban environment.
Those skilled in the art will recognize improvements and modifications to the embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.
This application claims the benefit of U.S. Provisional Patent Application No. 61/445,213 filed Feb. 22, 2011, the disclosure of which is incorporated herein by reference in its entirety.
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8130043 | Arell | Mar 2012 | B2 |
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Number | Date | Country | |
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20120212292 A1 | Aug 2012 | US |
Number | Date | Country | |
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61445213 | Feb 2011 | US |