Claims
- 1. In a process of preparing moisture resistant particles of electroluminescent phosphor, the steps comprising:introducing an inert gas into a reaction vessel that is charged with phosphor particles; heating said reaction vessel to a reaction temperature; introducing a nitride precursor into said reaction vessel; introducing a co-reactant into said reaction vessel; and maintaining said inert gas flow, co-reactant flow and precursor supply for a time sufficient to make said phosphor particles moisture resistant wherein said nitride precursor includes a metal-nitrogen bond.
- 2. A method of encapsulating phosphor particles comprising:providing a bed of activated zinc sulfide electroluminescent phosphor particles, each of which exhibits humidity-accelerated decay; providing one or more precursors wherein at least one precursor has a metal-nitrogen bond; and exposing the bed of phosphor particles to the precursors such that the precursors chemically react and encapsulate the phosphor particles with a coating, wherein said coating is sufficiently encapsulating to provide the phosphor particles with reduced sensitivity to humidity-accelerated decay as compared to the uncoated phosphor.
- 3. A method as set forth in claim 2 wherein said coating includes metal- nitrogen bonds.
- 4. A method as set forth in claim 2 wherein said at least one precursor with a metal-nitrogen bond provides at least a single source of metal and nitrogen for said coating.
Parent Case Info
This application is a division of Ser. No. 09/277,875, filed Mar. 29, 1999, now U.S. Pat. No. 6,456,002, which is a continuation-in-part of Ser. No. 09/175,787, filed Oct. 20, 1998, now U.S. Pat. No. 6,064,150, and this application claims the benefit of Provisional Patent Application No. 60/072,510, filed Jan. 12, 1998.
US Referenced Citations (11)
Non-Patent Literature Citations (2)
Entry |
Chemical Vapor Deposition of Aluminum Nitride Thin Films; Gordon, et al.; J. Mater. Res.; Jul. 1992; pp. 1679-1684. |
Atmospheric Pressure Chemical Vapor Deposition of Aluminum Nitride Thin Films At 200-250° C; Gordon, et al.; J. Mater. Res.; Jan. 1991; pp. 5-7. |
Provisional Applications (1)
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Number |
Date |
Country |
|
60/072510 |
Jan 1998 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09/175787 |
Oct 1998 |
US |
Child |
09/277875 |
|
US |