Claims
- 1. A molecular memory integrated circuit, comprising:
a first cell coupled with a second cell, wherein:
the first cell includes:
a first actuator coupled with a first platform; a first cantilever coupled with the first platform; and the second cell includes:
a second actuator coupled with a second platform; and a memory device coupled with the second platform.
- 2. The molecular memory integrated circuit of claim 1, wherein:
the first cantilever couples the first cell with the second cell.
- 3. The molecular memory integrated circuit of claim 2, wherein:
a first input source is coupled with the first actuator; and the first actuator moves the first platform when directed by the first input source.
- 4. The molecular memory integrated circuit of claim 2, wherein:
a second input source is coupled with the second actuator; and the second actuator moves the second platform when directed by the second input source.
- 5. The molecular memory integrated circuit of claim 2, wherein:
the first cantilever is coupled with the memory device; an input source is coupled with the first actuator; the input source is coupled with the second actuator; the first actuator moves the first platform when directed by the input source; and the second actuator moves the second platform when directed by the input source.
- 6. A molecular memory integrated circuit, comprising:
a first cell coupled with a second cell, wherein:
the first cell includes:
a first actuator coupled with a first platform; a first cantilever coupled with the first platform; and the second cell includes:
a second actuator coupled with a second platform; a memory device coupled with the second platform; and the first cantilever includes a first cantilever tip; and the first cantilever extends away from the first cell and towards the second cell.
- 7. A molecular memory integrated circuit, comprising:
a molecular array read/write engine including:
a plurality of actuators; a plurality of cantilevers, at least one of the plurality of cantilevers having a cantilever tip; a plurality of interconnects; and a plurality of interconnect nodes; a memory device with a plurality of memory zones; whereby when a control signal is sent to the molecular array read/write engine, the control signal instructs the molecular array read/write engine to position the plurality of cantilevers such that the plurality of cantilever tips make contact with the memory device; whereby each memory zone makes contact with at least one of the plurality of cantilever tips.
- 8. The molecular memory integrated circuit of claim 7, whereby the memory device is read by applying a sensing signal through the cantilever tip and into the memory device.
- 9. The molecular memory integrated circuit of claim 7, whereby the memory device is written to by applying a write signal through at the cantilever tip and into the memory device.
- 10. A molecular memory integrated circuit, comprising:
a molecular array read/write engine including:
a plurality of actuators; a platform; a plurality of cantilevers, at least one of the plurality of cantilevers having a cantilever tip; a plurality of interconnects; and a plurality of interconnect nodes; a memory device; wherein the plurality of cantilevers are passive; and wherein at least one cantilever from the plurality of cantilevers has a curve such that the corresponding cantilever tip extends away from the platform and towards the memory device.
- 11. The molecular memory integrated circuit of claim 10, whereby the memory device is read by applying a sensing signal through the cantilever tip and into the memory device.
- 12. The molecular memory integrated circuit of claim 10, whereby the memory device is written to by applying a write signal through the cantilever tip and into the memory device.
- 13. A molecular memory integrated circuit, comprising:
a molecular array read/write engine including:
a plurality of actuators; a platform; a plurality of cantilevers, at least one of the plurality of cantilevers having a cantilever tip; a plurality of interconnects; and a plurality of interconnect nodes; a memory device; wherein the plurality of cantilevers are passive; and wherein at least one cantilever from the plurality of cantilevers has a curve such that the corresponding cantilever tip extends away from the platform and contacts the memory device.
- 14. The molecular memory integrated circuit of claim 13, whereby the memory device is read by applying a sensing signal through the cantilever tip and into the memory device.
- 15. The molecular memory integrated circuit of claim 13, whereby the memory device is written to by applying a write signal through the cantilever tip and into the memory device.
- 16. A memory apparatus, comprising:
a media platform having a first substrate comprising silicon dioxide; a read/write mechanism, including:
a read/write platform having a second substrate comprising silicon dioxide; and one or more cantilever tips connected with said read/write platform; a media platform movement mechanism operably attached to said media platform and configured to move said media platform in response to media control signals; and a read/write platform movement mechanism operably attached to said read/write platform and configured to move said read/write platform in response to read/write platform control signals; wherein at least one of said one or more cantilever tips can cause the formation of an anomaly on said media platform.
- 17. The memory apparatus of claim 16, wherein the media platform and the read/write platform have substantially the same thermal expansion rates.
- 18. The memory apparatus of claim 16, whereby the media platform is read by applying a sensing signal through at least one of the one or more cantilever tips and into the media platform.
- 19. The memory apparatus of claim 16, whereby the media platform is written to by applying a write signal through at least one of the one or more cantilever tips and into the media platform.
- 20. A memory apparatus, comprising:
a media die having a plurality of media platforms; a read/write die having a plurality of read/write mechanisms, each of the plurality of read/write mechanisms including:
a read/write platform comprising a material having a low thermal coefficient; and one or more cantilever tips connected with said read/write platform; a plurality of media platform movement mechanisms, each of the plurality of media platform movement mechanisms operably attached to a corresponding media platform and configured to move said media platform in response to media control signals; and a plurality of read/write platform movement mechanisms, each read/write movement mechanism operably attached to a corresponding read/write platform and configured to move said read/write platform in response to read/write platform control signals; wherein at least one of said one or more cantilever tips can cause the formation of an anomaly on said media platform; wherein each of the plurality of read/write mechanisms is sized such that the one or more cantilever tips can remain aligned with data previously written to the corresponding media platform across an operating temperature range.
- 21. The memory apparatus of claim 20,
wherein each of the plurality of read/write mechanisms is adapted to be individually accessed; and wherein the material is silicon dioxide.
- 22. The memory apparatus of claim 20, whereby the memory die is read by applying a sensing signal through at least one of said one or more cantilever tips and into the media platform.
- 23. The memory apparatus of claim 20, whereby the memory die is written to by applying a write signal through at least one of said one or more cantilever tips and into the media platform.
- 24. The memory apparatus of claim 20, wherein each of the plurality of read/write mechanisms is adapted to be individually moved.
- 25. The memory apparatus of claim 20, wherein the plurality of read/write mechanisms are adapted to be multiplexed.
- 26. The memory apparatus of claim 20, wherein each of the cantilever tips can be individually accessed.
- 27. A memory apparatus, comprising:
a media cell having a plurality of media platforms; a read/write cell having a plurality of read/write mechanisms, each of the plurality of read/write mechanisms including:
a read/write platform; and one or more cantilever tips connected with said read/write platform; a plurality of media platform movement mechanisms, each of the plurality of media platform movement mechanisms operably attached to a corresponding media platform and configured to move said media platform in response to media control signals; and a plurality of read/write platform movement mechanisms, each read/write movement mechanism operably attached to a corresponding read/write platform and configured to move said read/write platform in response to read/write platform control signals; wherein each of said one or more cantilever tips can cause the formation of an anomaly on said media platform; wherein each of the plurality of read/write mechanisms is sized such that the plurality of read/write mechanisms can operate across an industrial temperature range without thermal compensation.
- 28. The memory apparatus of claim 27, whereby the media cell is read by applying a sensing signal through at least one of the one or more cantilever tips and into the media platform.
- 29. The memory apparatus of claim 27, whereby the media cell is written to by applying a write signal through at least one of the one or more cantilever tips and into the media platform.
- 30. The memory apparatus of claim 27, wherein each of the plurality of read/write mechanisms is adapted to be individually accessed.
- 31. The memory apparatus of claim 27, wherein each of the plurality of read/write mechanisms is adapted to be individually moved.
- 32. The memory apparatus of claim 27, wherein the plurality of read/write mechanisms are adapted to be multiplexed.
- 33. The memory apparatus of claim 27, wherein each of the cantilever tips can be individually accessed.
- 34. An apparatus for use as cache memory in a computer system, comprising:
a media die having plurality of media platforms; a read/write die having a plurality of read/write mechanisms, each of the plurality of read/write mechanisms including:
a read/write platform; and one or more cantilever tips connected with said read/write platform; a plurality of media platform movement mechanisms, each of the plurality of media platform movement mechanisms operably attached to a corresponding media platform and configured to move said media platform in response to media control signals; and a plurality of read/write platform movement mechanisms, each read/write movement mechanism operably attached to a corresponding read/write platform and configured to move said read/write platform in response to read/write platform control signals; wherein at least one of said one or more cantilever tips can cause the formation of an anomaly on said media platform; wherein the plurality of read/write mechanisms are adapted to be multiplexed.
- 35. The apparatus of claim 34, whereby the media platform is read by applying a sensing signal through at least one of the one or more cantilever tips and into the media platform.
- 36. The apparatus of claim 34, whereby the media platform is written to by applying a write signal through at least one of the one or more cantilever tips and into the media platform.
- 37. A computing system having improved power-up latency, comprising:
a microprocessor; a hard disk drive electrically connected with the microprocessor; a cache memory device electrically connected with the microprocessor and the hard disk drive, the cache memory device including:
a media die having plurality of media platforms; a read/write die having a plurality of read/write mechanisms, each of the plurality of read/write mechanisms including:
a read/write platform; and one or more cantilever tips connected with said read/write platform; a plurality of media platform movement mechanisms, each of the plurality of media platform movement mechanisms operably attached to a corresponding media platform and configured to move said media platform in response to media control signals; and a plurality of read/write platform movement mechanisms, each read/write movement mechanism operably attached to a corresponding read/write platform and configured to move said read/write platform in response to read/write platform control signals; wherein at least one of said one or more cantilever tips can cause the formation of an anomaly on said media platform; wherein the plurality of read/write mechanisms are adapted to be multiplexed.
- 38. A server system, comprising:
one or more microprocessors; one or more cache memory devices electrically connected with the one or more microprocessors, at least one of the cache memory devices including:
a media die having plurality of media platforms; a read/write die having a plurality of read/write mechanisms, each of the plurality of read/write mechanisms including:
a read/write platform; and one or more cantilever tips connected with said read/write platform; a plurality of media platform movement mechanisms, each of the plurality of media platform movement mechanisms operably attached to a corresponding media platform and configured to move said media platform in response to media control signals; and a plurality of read/write platform movement mechanisms, each read/write movement mechanism operably attached to a corresponding read/write platform and configured to move said read/write platform in response to read/write platform control signals; wherein at least one of said one or more cantilever tips can cause the formation of an anomaly on said media platform; wherein the plurality of read/write mechanisms are adapted to be multiplexed.
- 39. A memory apparatus, comprising:
a media die having a plurality of media platforms; a read/write die having a plurality of read/write mechanisms, each of the plurality of read/write mechanisms including:
a read/write platform; and one or more cantilever tips connected with said read/write platform; a plurality of media platform movement mechanisms, each of the plurality of media platform movement mechanisms operably attached to a corresponding media platform and configured to move said media platform in response to media control signals; and a plurality of read/write platform movement mechanisms, each read/write movement mechanism operably attached to a corresponding read/write platform and configured to move said read/write platform in response to read/write platform control signals; wherein at least one of said one or more cantilever tips can cause the formation of an anomaly on said media platform; wherein each of the plurality of read/write mechanisms is sized such that thermal expansion of the read/write platform across an operating temperature range does not cause misalignment of the one or more cantilever tips with data previously written to the corresponding media platform.
- 40. A molecular memory integrated circuit, comprising:
a first die, including:
a first plurality of interconnect nodes coupled with a first plurality of interconnects; a first cell, including:
a first actuator coupled to a first interconnect node through a first interconnect and the first actuator coupled to a second interconnect node through a second interconnect forming a first input to the first actuator; a first pull-rod coupling the first actuator with a first platform; the first platform including a cantilever that includes a cantilever tip; and a third interconnect node coupled with the cantilever through a third interconnect; a second die, including:
a second plurality of interconnect nodes coupled with a second plurality of interconnects; a second cell, including:
a second actuator coupled to a fourth interconnect node through a fourth interconnect and the second actuator coupled to a fifth interconnect node through a fifth interconnect forming a second input to the second actuator; a second pull-rod coupling the second actuator with a second platform; the second platform connected with a memory device; and the first die is connected with the second die through contact of the cantilever tip with the memory device.
- 41. A method for using a molecular memory integrated circuit, comprising:
positioning a first platform that includes a cantilever, which includes a cantilever tip, near a second platform that includes a memory device; and moving the first platform such that the cantilever tip contacts the memory device at a specific location.
- 42. A molecular memory integrated circuit, comprising:
a first die coupled with a second die, wherein:
the first die includes:
a first interconnect node coupled with a first cell through a first interconnect; wherein the first cell, includes a first actuator, including a first top stage and a first bottom stage, coupled with a first platform through a first pull-rod; and wherein the first platform includes a first molecular array read/write engine, including a first cantilever, which includes a first cantilever tip; and the second die, includes:
a second interconnect node coupled with a second cell through a second interconnect; wherein the second cell, includes a second actuator, including a second top stage and a second bottom stage, wherein the second actuator is coupled with a second platform through a second pull-rod; and wherein the second platform includes a memory device.
- 43. A molecular memory integrated circuit comprising:
a first set of cells coupled with a second set of cells, wherein:
each cell from said first set comprises:
a head platform; an array of cantilevers on the head platform, each cantilever comprising:
an atomic probe tip; a plurality of actuators for moving the head platform; each cell from said second set comprises:
a media platform; a plurality of actuators for moving the media platform;
- 44. The molecular memory integrated circuit of claim 43, wherein each cell from said first set of cells can be moved independently from each other cell from said first set.
- 45. The molecular memory integrated circuit of claim 44, wherein each cell from said second set of cells can be moved independently from each other cell from said second set.
- 46. The molecular memory integrated circuit of claim 43, wherein each head platform and each media platform are made from low thermal coefficient material such as glass or a thermal oxide.
- 47. The molecular memory integrated circuit of claim 43, wherein each head platform and each media platform can be independently accessed allowing for parallel readout, writing, and erasing.
PRIORITY CLAIM
[0001] This application claims priority to the following U.S. Provisional Patent Applications:
[0002] U.S. Provisional Patent Application No. 60/418,616 entitled “Molecular Memory Integrated Circuit Utilizing Non-Vibrating Cantilevers,” Attorney Docket No. LAZE-01011US0, filed Oct. 15, 2002.
[0003] U.S. Provisional Patent Application No. 60/418,618 entitled “Molecular Memory Integrated Circuit,” Attorney Docket No. LAZE-01016US0, filed Oct. 15, 2002.
Provisional Applications (2)
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Number |
Date |
Country |
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60418616 |
Oct 2002 |
US |
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60418618 |
Oct 2002 |
US |