Claims
- 1. A method of removing a tetraethylammonium organic template from the pores of a molecular sieve, said molecular sieve comprising silicon oxide and an oxide selected from zinc oxide, aluminum oxide, boron oxide, gallium oxide, iron oxide, titanium oxide, vanadium oxide, zirconium oxide, tin oxide or mixtures thereof, said method comprising contacting the molecular sieve with acetic acid or a mixture of acetic acid and pyridine at elevated temperature for a time sufficient to remove tetraethylammonium organic template from the molecular sieve.
- 2. The method of claim 1 wherein the molecular sieve has the topology of zeolite beta.
- 3. The method of claim 1 wherein the elevated temperature is 60° C. or less.
- 4. The method of claim 1 wherein the elevated temperature is from about 80° C. to about 135° C.
- 5. A method of removing an organic template from the pores of a molecular sieve and at the same time removing zinc atoms from the framework of the molecular sieve, wherein the molecular sieve comprises an oxide of silicon, an oxide of zinc and, optionally, an oxide selected from aluminum oxide, boron oxide, gallium oxide, vanadium oxide, iron oxide, titanium oxide and mixtures thereof, and having the framework topology of zeolite beta, said method comprising contacting the molecular sieve with acetic acid or a mixture of acetic acid and pyridine at elevated temperature for a time sufficient to remove essentially all of the organic template and zinc from the molecular sieve.
- 6. The method of claim 5 wherein the elevated temperature is about 60° C. or less.
- 7. The method of claim 5 wherein the elevated temperature is from about 80° C. to about 135° C.
- 8. The product produced by the method of claim 5.
- 9. A method of making a crystalline material comprising (1) contacting in admixture under crystallization conditions a source of silicon oxide, a source of zinc oxide, a source of lithium or a mixture of lithium and another alkali metal and a templating agent comprising a tetraethylammonium cation until a crystalline material comprised of oxides of silicon and zinc and having the topology of zeolite beta are formed, (2) contacting the crystals with acetic acid or a mixture of acetic acid and pyridine at an elevated temperature of about 60° C. or less for a time sufficient to remove essentially all of the organic template and zinc from the crystals, and (3) contacting the crystals with a solution containing a source of aluminum, boron, gallium, iron, titanium, vanadium, zirconium, tin or mixtures thereof.
- 10. The product produced by the method of claim 9.
Parent Case Info
This application is a division of application Ser. No. 09/288,247, Apr. 8, 1999, now U.S. Pat. No. 6,117,411, which is a continuation-in-part of application Ser. No. 09/106,598, filed Jun. 29, 1998, now abandoned.
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Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09/106598 |
Jun 1998 |
US |
Child |
09/288247 |
|
US |