The invention belongs to the field of converting infrared light into visible light.
The impact of well-managed light on our everyday life is immeasurable. The light-emitting diode (LED) is one of the most prominent developments since the invention of incandescent lightbulbs in the late 1800s. The latter dissipate most energy in the infrared as heat, whereas typical white LEDs cover only the visible spectrum. Most prominent examples of white-light LEDs are based on galliumnitride. Their narrow-band ultraviolet (UV) emission is converted into visible light by applying phosphors. This cold light has tremendous advantages with respect to energy efficiency. Other concepts pursued for efficient white-light generation include the combination of red, green, and blue emitters, which is currently the path of choice for organic LEDs. All types of LEDs excel due to their virtually Lambertian emission patterns that are highly desirable for applications like active displays that require large viewing angles. However, this poses challenges in targeted illumination and projection of light due to the associated large etendue G=AΩ, where A is the source area and Ω is the solid angle of emission. Ideally, the etendue remains constant throughout an entire optical system where light undergoes perfect reflections or refractions. It can increase—for example, when impinging on a diffusor—but cannot be decreased without loss in radiance. This renders low-etendue sources extremely desirable for devices requiring high spatial resolution like microscopes or for applications with high throughput, such as projection systems. Other concepts of white-light generation by monochromatic sources besides phosphors rely on nonlinear effects that provide very broadband supercontinua and are widely used in many scientific applications. These are often referred to as brilliant sources. They generally feature small, point-source-like emission areas due to the tightly focused short-pulsed driving lasers that are used to overcome the vast peak electric field strength required to invoke the extremely nonlinear effects such as soliton formation. Hence, the related challenges, such as the system size, price, and energy requirements, restrict the use of supercontinuum sources to scientific laboratory use and the medical sector—for example, in coherent anti-Stokes Raman scattering or optical coherence tomography, as well as for defense and security applications.
Tailored light sources have greatly advanced technological and scientific progress by optimizing the emission spectrum or color and the emission characteristics. Well known are, e.g., white-light fiber laser. But all known devices only transform either the light emitted by expensive high-power lasers into directional white light or high energy UV emission of blue LEDs into omnidirectional white light. There is no material/device known within the state of the art, which can transform the light emitted by low-cost, compact laser diodes or other low-energetic monochromatic light sources into white-light.
The invention therefore provides such a new material/device transforming the light emitted by low-cost, compact laser diodes or other monochromatic light sources into white-light.
We demonstrate an efficient spectrally broadband and highly directional warm-white-light emitter based on a nonlinear process driven by a cheap, low-power continuous-wave infrared laser diode. The nonlinear medium is a specially designed amorphous material composed of symmetry-free, diamondoid-like cluster molecules that are readily obtained from ubiquitous resources. The visible part of the spectrum resembles the color of a tungsten-halogen lamp at 2900 kelvin while retaining the superior beam divergence of the driving laser. This approach of functionalizing energy-efficient state-of-the-art semiconductor lasers enables a technology complementary to light-emitting diodes for replacing incandescent white-light emitters in high-brilliance applications.
The invention concerns a highly efficient directional molecular white-light emitter driven by a continuous-wave laser diode. The invention describes amorphous materials that emit a broadband (warm white) spectrum of light upon excitation with an infrared laser via highly nonlinear processes. Inorganic nanocrystals form the core of their material and are coated with organic ligands on the surface.
When excited with infrared light, nonlinear optical processes cause the material to emit broadband white light. The new light source is both efficient and environmentally benign.
Here, a molecule-based solid compound is used by the inventors as an extremely nonlinear medium. It enables the steady-state operation of a low-etendue, directional broadband white-light source covering the entire visible spectrum driven by a low-cost infrared laser diode. The compound comprises semiconductor-based cluster molecules decorated with covalently attached organic ligands supplying quasidelocalized electrons. The overall goal was to synthesize an amorphous compound combining a suitable band-gap inorganic semiconductor cluster core with organic ligands providing delocalized electrons in the electronic ground state of the molecule, while being composed of components that are ubiquitous, thus readily obtainable and cheap.
The basic experiments were conducted by use of derivates of tetrel-chalkogenides like SnS2, GeS2 etc. forming the semiconductor-based core-structure of the cluster molecules, like (RdelocSn)4S6. It is obvious to the person skilled in the art, that other binary semiconductors which are providing a large transition dipole moment can also form a semiconductor-based core-structure. Thus it is obvious that the invention also comprises compounds comprising the Elements B, Al, Ga, In, TI and N, P, As, Sb, Bi in binary combinations of any group 13-Element with any group 15-Element.
The inventors produced tin-sulfide-based molecules with an adamantane-like, thus diamondoid, [Sn4S6] scaffold. The latter is free of inversion symmetry because it has a tetrahedral shape. Lower molecular symmetry and delocalization of electronic states are realized by decoration of the core with randomly oriented organic ligands (substituents) Rdeloc=4-(CH2═CH)—C6H4 (
Additionally, they enable covalent attachment of the clusters to inorganic materials. It is well known to the person skilled in the art, that other substituents, e.g. hydroxyl groups, thiol groups etc., can also be used for these purposes, so that the usage of such groups for chemical modification and/or covalent attachment to surfaces also lies within the scope of the invention.
It is also well known to the person skilled in the art that the lower molecular symmetry and delocalization of electronic states of compounds of type [(RT)4E6] (E=O, S, Se, Te; T=Sn, C, Si, Ge, Pb) can also be realized by use of the ligands contained in the list comprising aromatic monocyclic substituents/ligands, for example phenyl, benzyl, styryl; aromatic polycyclic substituents/ligands, for example naphthyl, anthryl, phenanthryl; heteroaromatic monocyclic substituents/ligands, for example pyridyl; heteroaromatic polycyclic substituents/ligands, for example aza-naphthyl, aza-anthryl, aza-phenanthryl, diaza-naphthyl, diaza-anthryl, diaza-phenanthryl, bipyridyl, terphenyl. The inorganic scaffold is kinetically protected by the sterical influence of the organic substituents. Even small substituents like methyl groups effectively prohibit decomposition of the cluster structure under formation of the thermodynamically favored inorganic sulfides, e.g. tinsulfide.
The compound [(RdelocSn)4S6] was obtained as a fine amorphous powder (
Although the color impression closely resembles an incandescent source, the characteristic directional features of the driving CW laser are retained by the nonlinear medium. The angular emission pattern for excitation with a loosely focused CW near-infrared laser beam (
The emission spectra corresponding to the color temperatures in
To gain insight into the underlying mechanism of white-light generation, the inventors compare the spontaneous emission for above-bandgap UV excitation to the white-light characteristics (
The white-light spectrum is shifted to lower energies; only the high-energy cutoff appears to be limited by reabsorption in the dense amorphous molecular solid. Furthermore, it should be noted that the spontaneous emission is several orders of magnitude less bright than the white light. The photon energy of the driving laser is detuned very far off resonance, and no indications of emission after multiphoton excitation are seen. Further differences are observed for the lifetimes for pulsed excitation of the spontaneous emission and the white light (
All of the above considerations imply a mechanism for white-light generation (
The reemission during the accelerated motion in the anharmonic molecular potential is conceptually similar to high-harmonic generation in noble gases or optically driven gas plasmas and the resulting plateau formation. The most remarkable difference, however, is the involvement of electrons in the electronic ground state only. This infers the low electric field strength required to invoke the broadband emission accessible even for CW lasers. Hence, the nonlinearity should depend critically on the electrons available in conjugated π-systems of the ligands and on the composition of the cluster core that provides the high-energy cutoff (
The clusters are potentially integrated into a monolithic device. During vacuumde position, the clusters form thin amorphous layers on hydrogen-terminated silicon single crystals and on GaAs, the latter being particularly important for integration into diode lasers. The high-angle annular dark-field scanning transmission electron microscopy (TEM) image for deposition on a GaAs (001) surface is given in
Within the following paragraphs, the fine-tuneability of the nonlinear response, i.e., changing from white-light generation to second harmonic generation as well as controlling the white-light properties is demonstrated. These are investigated as a function of T, π-delocalization of the electron density within R, and the order within the molecular solids.
For this purpose, two series of compounds of the general formula [(RT)4S6] (R=organic ligand; T=Si, Ge, Sn) are prepared. All of these compounds are expected to exhibit (very) strong nonlinear optical properties, as they have similar compositions and structures as the proof-of-principle compound 1.
One series addresses the effect of the ligands on the [(RSn)4S6] scaffold. The ligands are varied from R=methyl (Me, 2) through R=1-naphthyl (Np, 3) and styryl (Sty, 1) to R=phenyl (Ph, 4) for exploration of the impact of the presence and the nature of the π-electron system. For this, it is either completely absent (Me) or decreases in size (Np→Sty→Ph). Changing the ligand particularly changes the intermolecular interactions, including the tendency of the solid material to exhibit no, short-range, or long-range order, which determines its amorphousness versus crystallinity. A second series addresses the composition of the inorganic cluster core. This affects the optical gap of the clusters, starting out from the Sn/S combination in 4 through Ge/S (5) to Si/S (6). Overall, the two sample series reveal (i) whether and how the T/E/R combination affects the orderliness or potential crystallization and (ii) how this affects the nonlinear optical properties.
Except for compound 6, the compounds are obtained as amorphous powders under a large variety of reaction and crystallization conditions tested to date. Hence, the molecular structures of the latter are elucidated via density functional theory (DFT) calculations (see section embodiments of the invention). According to these, all of the compounds are based on a heteroadamantane-type [T4S6] scaffold, which is energetically favored over the “double-decker”-type isomer by 19.2-36.4 kJ/mol (see
Next, the nonlinear optical properties of the compounds is investigated. The samples are kept under high-vacuum conditions during laser irradiation. For excitation, a continuous-wave diode laser operating at a central wavelength of 980 nm is used. The optical power of 200 mW is focused on the sample in a confocal setup featuring a reflective microscope objective to avoid any chromatic aberrations (see section embodiments of the invention). This setup yields a spot diameter of less than 10 μm on the sample. For detection, a Czerny-Turner-type spectrometer equipped with a thermoelectrically cooled back-illuminated deep-depletion Si-charge-coupled device camera is used. Residual scattered pump laser is attenuated using a heat-absorbing glass filter (Schott KG3).
Characteristic spectra of the first sample series (compounds 1-4) are given in
The situation changes upon attachment of ligands with a medium-sized extension of the π-electron system. Obviously, an effective intermolecular interaction does not take place between the cluster molecules in 1 (R=Sty), which is attributed to both the reduced π-stacking capability compared with Np ligands and the higher conformational flexibility of the Sty ligands compared with all of the other ligands involved herein. The smallest π-electron system in this series is present in the Ph groups in compound 4. Like the Sty ligands in 1, they hamper any intermolecular order when attached to the [Sn4S6] core. Hence, phase matching is ruled out, and the nonlinear optical response changes from SHG to white-light generation.
The subtle yet crucial role of microscopic molecular order is further underlined by the slightly reduced white-light generation in 1 compared with 4. In these compounds, the delocalization of the π-electron system is virtually identical. Nevertheless, the Sty ligands in 1 provide an increased potential for dispersive interactions between neighboring molecules and thus a potentially higher degree of order in the material, without reaching long-range order or crystallinity. Thus, the strength of the nonlinear optical response might in turn be used as a measure of the degree of intermolecular order in a macroscopically amorphous compound.
The strong nonlinear response found for all four compounds underlines the efficient enhancement of the nonlinearity by the transition dipole moment of the cluster core. Hence, even compound 2, with its comparatively small electronic system, exhibits SHG, as the Me groups are in close proximity to the inorganic core.
The second group of samples comprises compounds 4, 5, and 6. Here the inorganic cluster core is varied while the Ph ligands, which proved as most suitable for white-light generation in the first series, remain unchanged. In striking difference to the other two Ph-decorated compounds, 6 is obtained as clear and sizable single crystals (
The fact that Ph ligands, which perfectly exclude crystallization in the case of compounds 4 and 5, do allow for the longer-range order in a crystal lattice in 6, can be attributed to the different relative sizes of the three components T, E, and R. Obviously, four Ph ligands match well the steric demands of the [Si4S6] scaffold to form a stable crystal structure with interdigitating Ph groups that, however, do not feature any typical π-stacking orientations with respect to each other. In contrast, a suitable crystal lattice is lacking in the T/E/R=Sn/S/Ph and Ge/S/Ph combinations in 4 and 5, respectively.
Comparison of the spectra of 4 and 5 reveals a blue shift of the maximum and of the high-energy flank when Sn is replaced with Ge. The white-light spectrum in both compounds is limited by reabsorption from the fundamental electronic transition of the cluster core. In accordance with the band gaps of SnS2 and GeS2 (2.18-2.44 eV and 3.2 eV, respectively), the reabsorption limit in compound 5 is blue shifted relative to that in 4. This is confirmed by UV/Vis absorption spectroscopy (
Thus the invention can be characterized as follows:
The invention comprises at least one non-crystalline resp. amorphous Compound/Material, characterized in that the Compound/Material comprises a diamandoid core-structure containing at least one atom of at least one chemical element, chosen from the list comprising C, Si, Ge, Sn, Pb, O, S, Se, Te whereby the atoms forming the diamandoid core-structure are chosen independently from each other and may or may not carry substituents/ligands.
The core-structure of the compound may be formed by inorganic nanocrystals of the above mentioned material comprising at least one chemical element, chosen from the list comprising C, Si, Ge, Sn, Pb, O, S, Se, Te. In this case the nanocrystals are coated with organic ligands on the surface.
The invention further comprises at least one Compound/Material as previously described, characterized in that the substituents/ligands are independently from each other chosen from the list comprising aromatic monocyclic substituents/ligands, for example Phenyl, Benzyl, Styryl; aromatic polycyclic substituents/ligands, for example Naphthyl, Anthryl, Phenanthryl; heteroaromatic monocyclic substituents/ligands, for example Pyridyl; heteroaromatic polycyclic substituents/ligands, for example aza-Naphthyl, aza-Anthryl, aza-Phenanthryl, diaza-Naphthyl, diaza-Anthryl, diaza-Phenanthryl.
An especially preferred compound according to the invention exhibits a molecular structure according to Formula I:
In Formular (I)
The invention further comprises a compound as previously revealed, where the substituents are randomly oriented organic ligands.
The invention further comprises the usage of the compound(s) as previously revealed within an electronic device.
The invention further comprises the usage as previously revealed, characterized in that the electronic device is directionally emitting white light.
The invention further comprises the usage as previously revealed, characterized in that the electronic device is chosen from the list comprising laser-diodes, semiconducting laser-diodes, waveguides, light emitting diodes (LED), organic light emitting diodes (OLED), light emitting transistors, LED-screens, OLED-screens, backlight-devices of TFT-displays.
The invention further comprises the usage as previously revealed, characterized in that the compound is integrated into a monolithic device.
The invention further comprises the usage as previously revealed, characterized in that the compound is applied via vacuum deposition on hydrogen-terminated silicon single crystals and/or on GaAs, whereat the compound forms amorphous layers.
The invention further comprises the usage as previously revealed, characterized in that at least one type of substituent, attached to the diamandoid core-structure is used for further chemical modification and/or covalent attachment of the compound to inorganic materials.
The invention further comprises a polymer film comprising at least one inventive Compound as previously described. The invention also comprises a device comprising the polymer film whereat the polymer film is located distant from an infrared laser diode emitting laser light with a wavelength between 800 nm and 1100 nm. In another embodiment the polymer film is located between two glass slips or other types of coverings from which at least the one which is located more closely to the infrared laser diode is transparent for laser light.
The invention is also comprising a layer comprising at least one inventive Compound as previously described.
Synthesis and Characterization Methods
All manipulations were performed under argon atmosphere. Acetone was dried and freshly distilled prior to use, as well as all other solvents. Distilled water was degassed freshly prior to use. Trichloro(4-vinylphenyl)tin (RdelocSnCl3, Rdeloc=4-(CH2═CH)—C6H4) (A) was prepared according to the method reported in the state of the art. [(MeSn)4S6] (2), [(NpSn)4S6] (3, Np=1-naphthyl), [(StySn)4S6] (1, Sty=para-styryl), and [(PhSn)4S6] (4) are also prepared according to methods reported in the state of the art. Na2S.9H2O and all other reagents are purchased from Sigma-Aldrich.
Melting points were measured in a sealed glass tube on a Krüss KSP1 N meltingpoint apparatus. Nuclear magnetic resonance (1H NMR, 13C NMR, 29Si and 119Sn NMR) measurements were carried out using a Bruker DRX 300 MHz and DRX 500 MHz spectrometer at 298 K. The chemical shifts were quoted in ppm relative to the residual protons of deuterated solvent in 1H NMR and 13C NMR. Me4Sn was used as external standard for 119Sn and 29Si NMR measurements. Infrared (IR) spectra were recorded on a Bruker Tensor 37. ESI-MS measurements were performed on a Thermo Fischer Scientifics LTQ-FT Ultra mass spectrometer. Energy-dispersive X-ray spectroscopy analysis, EDX, was performed using the EDX device Voyager 4.0 of Noran Instruments coupled with the electron microscope CamScan CS 4DV. Data acquisition was performed with an acceleration voltage of 20 kV and 100 s accumulation time. Elemental analysis was performed on an Elementarvario micro apparatus. μRFA is done employing a Bruker Tornado M4.
Na2S.9H2O (0.55 g, 2.3 mmol) was dissolved in a mixture of 5 mL water and 5 mL acetone. A solution of trichloro(4-vinylphenyl)tin (A; RdelocSnCl3, Rdeloc=4-(CH2═CH)—C6H4), 0.50 g, 1.5 mmol) in 3 mL of acetone was added dropwise at a temperature of 268 K. It was stirred at this temperature for 15 minutes. The resulting colorless precipitate was filtered, washed with water, and dried in high vacuum to become a fine homogeneous powder.
Yield: 0.36 g (0.33 mmol, 88%)); m.p.: not observed (slow decomposition above 573 K); 1H-NMR (300 MHz, DMF-d7): δ 7.80-8.22 p.p.m. (m, 8H), 7.46-7.69 (m, 8H, Ph), 6.79 (dd, J=10.9, 17.8 Hz, 4H, CH), 5.92 (d, J=17.8 Hz, 4H, CH2), 5.30 (d, J=10.9 Hz, 4H, CH2); 13C-NMR (75 MHz, DMF-d7): δ 114.94, 126.36, 135.03, 135.32, 136.92, 138.94; 119Sn-NMR (187 MHz, DMF-d7): δ −258; IR: 2849 (w), 1626 (w), 1586 (w), 1547 (w), 1490 (w), 1386 (m), 1295 (w), 1185 (w), 1068 (w), 1024 (w), 1011 (w), 986 (m), 911 (m), 824 (s), 728 (w), 632 (w), 585 (m), 449 (s) cm−1; HRMS (m/z; see
As the compound is intrinsically amorphous, the suggested molecular geometry was calculated and validated by means of DFT calculations (see below).
Anhydrous sodium sulfide, Na2S, (0.906 g, 11.6 mmol) was suspended in tetrahydrofurane (18 mL). At a temperature of 0° C. phenyltrichlorosilane, PhSiCl3, (1.61 g, 7.75 mmol) was added dropwise under stirring. After two hours the reaction was continued at room temperature for 22 hours. The solvent was evaporated and the residue was extracted with toluene (18 mL). The solvent was slowly evaporated and the product was isolated as single crystalline material.
Yield: 0.38 g (0.62 mmol, 33% single crystalline yield based on PhSiCl3). 1H NMR (300 MHz, CDCl3, 25° C.): 7.49-7.93 (m, 20H) ppm. 13C NMR (75 MHz, CDCl3, 25° C.): 129.1, 132.6, 133.1, 135.2 ppm. 29Si NMR (99 MHz, CDCl3, 25° C.): 8.5 ppm. IR: 442 (w), 454 (w), 473 (s), 492 (m), 508 (m), 555 (s), 619 (m), 688 (s), 703 (s), 738 (s), 794 (s), 863 (m), 915 (w), 925 (w), 998 (s), 1014 (s), 1087 (s), 1106 (s), 1184 (w), 1258 (s), 1302 (s), 1334 (s), 1426 (m), 1484 (s), 1587 (s), 2962 (m), 3043 (w), 3066 (w) cm−1. Analysis (% calcd, % found for C24H20S6Si4): C (36.43, 35.91), H (2.55, 2.52). μRFA (calcd, found for S6Si4): S (1.00, 1.00), Si (0.67, 0.66).
Phenyltrichlorogermane, PhGeCl3, (1.52 g, 5.93 mmol) was added at room temperature to a solution of sodium sulfide nonahydrate, Na2S.9H 2 O, (2.12 g, 8.90 mmol) in a solvent-mixture of water (10 mL) and acetone (8 mL). The resulting white precipitate was filtered and washed with water.
Yield: 0.63 g (0.80 mmol, 42% based on PhGeCl3). 1H NMR (300 MHz, DMF-d7, 25° C.): 7.41-8.04 (m, 20H) ppm. 13C NMR (75 MHz, DMF-d7, 25° C.): 130.4, 131.7, 133.0, 133.9 ppm. IR: 420 (m), 457 (m), 537 (m), 617 (w), 690 (s), 732 (s), 815 (s), 834 (m); 883 (w), 929 (m), 996 (w), 1024 (w), 1087 (w), 1099 (w), 1159 (w), 1184 (w), 1260 (w), 1305 (w), 1332 (w), 1432 (m), 1438 (w), 3050 (w), 3070 (w) cm−1. Analysis (% calcd, % found for C24H20Ge4S6): C (36.43, 36.40), H (2.55, 2.64). μRFA (calcd, found for Ge4S6): Ge (0.67, 0.64), S (1.00, 1.00).
Phenyltrichlorogermane, PhGeCl3, (1.52 g, 5.93 mmol) is added at room temperature to a solution of sodium sulfide nonahydrate, Na2S.9H2O, (2.12 g, 8.90 mmol) in a solvent-mixture of water (10 mL) and acetone (8 mL). The resulting white precipitate is filtered and washed with water.
Yield: 0.63 g (0.80 mmol, 42% based on PhGeCl3). 1H NMR (300 MHz, DMF-d7, 25° C.): 7.41-8.04 (m, 20H) ppm. 13C NMR (75 MHz, DMF-d7, 25° C.): 130.4, 131.7, 133.0, 133.9 ppm. IR: 420 (m), 457 (m), 537 (m), 617 (w), 690 (s), 732 (s), 815 (s), 834 (m); 883 (w), 929 (m), 996 (w), 1024 (w), 1087 (w), 1099 (w), 1159 (w), 1184 (w), 1260 (w), 1305 (w), 1332 (w), 1432 (m), 1438 (w), 3050 (w), 3070 (w) cm−1. Analysis (% calcd, % found for C24H20Ge4S6): C (36.43, 36.40), H (2.55, 2.64). μRFA (calcd, found for Ge4S6): Ge (0.67, 0.64), S (1.00, 1.00).
Anhydrous sodium sulfide, Na2S, (0.906 g, 11.6 mmol) is suspended in tetrahydrofurane (18 mL). At a temperature of 0° C. phenyltrichlorosilane, PhSiCl3, (1.61 g, 7.75 mmol) is added dropwise under stirring. After two hours the reaction is continued at room temperature for 22 hours. The solvent is evaporated and the residue was extracted with toluene (18 mL). The solvent is slowly evaporated and the product is isolated as single crystalline material.
Yield: 0.38 g (0.62 mmol, 33% single crystalline yield based on PhSiCl3). 1H NMR (300 MHz, CDCl3, 25° C.): 7.49-7.93 (m, 20H) ppm. 13C NMR (75 MHz, CDCl3, 25° C.): 129.1, 132.6, 133.1, 135.2 ppm. 29Si NMR (99 MHz, CDCl3, 25° C.): 8.5 ppm. IR: 442 (w), 454 (w), 473 (s), 492 (m), 508 (m), 555 (s), 619 (m), 688 (s), 703 (s), 738 (s), 794 (s), 863 (m), 915 (w), 925 (w), 998 (s), 1014 (s), 1087 (s), 1106 (s), 1184 (w), 1258 (s), 1302 (s), 1334 (s), 1426 (m), 1484 (s), 1587 (s), 2962 (m), 3043 (w), 3066 (w) cm−1. Analysis (% calcd, % found for C24H20S6Si4): C (36.43, 35.91), H (2.55, 2.52). μRFA (calcd, found for S6Si4): S (1.00, 1.00), Si (0.67, 0.66).
Thermogravimetric Analysis (TGA) and Differential Scanning Calorimetry (DSC)
The TGA/DSC measurements were performed simultaneously on a Netzsch STA 400 with a heating rate of 10 K/min in Ar atmosphere in an Al2O3 crucible. The compound decomposes slowly above 573 K in an endothermic process (see
The thermal decomposition of the compounds in inert Ar atmosphere is observed at about 220° C. (2), 270° C. (3), 285° C. (1), 250° C. (4), 310° C. (5) and 370° C. (6), as shown in
Methods of Quantum Chemical Investigations
For density functional theory (DFT) calculations the program system TURBOMOLE Version 7.0, using the RIDFT program with the BP86 functional and grid size m3 was used. Basis sets were of def2-TZVP quality. For Sn atoms effective core potentials (ECP-28) have been used. No symmetry restrictions (i.e., C1 symmetry) during simultaneous optimizations of geometry and electronic structure were hold. The accuracy of the structures was found within the typical error of the method. Electronic excitations were calculated within the program system by using the ESCF program.
Quantum-Chemical Investigations of Structural Isomers
According to the obtained sum formula of (RdelocSn)4S6, two isomers for the organotin sulfide cluster exist. One isomer exhibits a hetero adamantane type scaffold with pseudo Td symmetry, the other isomer exhibits a double-decker like scaffold with pseudo D2 symmetry (see
Calculation of the lowest triplet and singlet excitations, gained from time-dependent DFT (TD-DFT) calculations of the most stable isomer, are in perfect agreement to the observed optical absorption behavior. The lowest singlet excitation exhibits 3.15 eV. The lowest triplet excitation exhibits 2.80 eV, being shifted by 0.3 eV towards lower energy due to fact that electron exchange energy is gained in these case. For higher triplet excitations the energies converge beyond 12 eV which is in good agreement with the 13.46 eV ionization energy used in the simulation of the anharmonic potential.
Linear Optical Absorption Spectroscopy
The linear optical absorption behavior was examined by means of UV-visible spectroscopy, measured as powder in reflectance mode under ambient conditions on a Varian Cary5000 spectrometer. Sample spectra are shown in
X-Ray Powder Diffraction
In order to confirm the amorphous nature of compounds 1 to 5 as well as the crystallinity of compound 6, all samples are examined by means of X-ray powder diffraction. The diffractograms are shown in
Single Crystal X-Ray Crystallography of Compound 6
Data of the X-ray diffraction analyses are collected on a diffractometer equipped with a STOE imaging plate detector system IPDS2 using MoKα radiation with graphite monochromatization (λ=0.71073 Å) at 100 K. Structure solution is performed by direct methods, full-matrix-least-squares refinement against F2 using SHELXTL software. Table 4 (
Density Functional Theory (DFT) Calculations
Methods of the quantum chemical investigation of compounds 1-6: For the DFT calculations, the program system TURBOMOLE Version 6.5 using the RIDFT program with the BP86 functional and grid size m3 is applied. Basis sets are of def2-TZVP quality. For Ge and Sn atoms, effective core potentials (ECP-28) is employed. The simultaneous optimization of geometric and electronic structures are done without symmetry restrictions (C1 symmetry). The accuracy of the structures is found within the typical error of the method.
According to the obtained general sum formula of [(RT)4S6] (T=Si, Ge, Sn) two isomers for the organotetrel sulfide cluster exist. One isomer exhibits a hetero adamantane type scaffold with pseudo Td symmetry, the other isomer exhibits a double-decker like scaffold with pseudo D2 symmetry. DFT calculations show that the hetero adamantane topology is energetically favored in every case with various substituents (R═H, Me, Ph) by 20.7 to 41.0 kJ. For compounds 1-6, the calculated values are given in Table 5 (
Angular-Resolved Spectroscopy
The angular-resolved spectroscopy was performed using a 980 nm, 200 mW continuous-wave laser module for excitation. The collimated laser was focused onto the sample using a 5 cm focal-length lens (see
Time-Resolved Photoluminescence Spectroscopy
Time-resolved photoluminescence spectroscopy (TRPL) was performed using a confocal microscopy setup using a streak camera for detection as depicted in FIG. 8, part A. For excitation, we used 100-fs pulses from a Ti:Sapphire laser oscillator with an repetition rate of 78 MHz. Extending its intrinsic operating range, the pulsed could be frequency doubled or tripled. The pulses are focused onto the sample using a 0.5 NA reflective microscope objective. The samples are kept in vacuum inside a cryostat. All measurements are performed at room temperature (293 K). The emission from the sample is collimated in reflection geometry using the same objective and is then imaged either onto a charge-couple device (CCD) camera or onto the entrance slit of a Czerny-Turner-type spectrometer. A spatial resolution <5 μm was achieved for optical control by the CCD-camera. Chromatic dispersion was performed using a 40 g/mm grating with a blaze angle of 500 nm. Time-resolution was provided by a standard synchronously scanning Hamamatsu streak-camera. This setup provides a time-resolution of 1.5 ps with an overall time-window of 1.5 ns.
Steady-State White-Light Spectroscopy
Steady-state white-light emission spectroscopy was performed using the same optical path and sample holder as for TRPL. A 980 nm, 200 mW laser diode module operating in continuous-wave mode was used for excitation instead of the Ti:sapphire laser. A thermoelectrically-cooled Si-CCD camera is used for detection in the VIS/NIR spectral range. For detection in the NIR/IR range a thermoelectrically cooled (Ga,In)As-CCD camera is used. The cameras are mounted to the second output port of the same imaging spectrometer used for the TRPL experiments. However, here a grating with 122 grooves/mm blazed at 500 nm is used.
Spectral Response Correction
All setups were corrected across an extended visible spectral range (300-1100 nm) for the spectral response characteristics to derive the CIE values from the measured spectra. Therefore, a standard traceable tungsten-halogen lamp with a fixed temperature of 2000 K is mounted at a position equivalent to the sample. The spectrum of the lamp was then recorded with both the TRPL and steady state luminescence setup, compared to the supplied black-body spectrum of 2000 K and the correction factor derived.
Influence of Excitation Wavelength
To check on the influence of the excitation wavelength multiple spectra of the white-light were obtained using the Ti:sapphire laser tuned to different wavelength, ranging from 725 to 1050 nm. For all these spectra the laser was operating in CW-mode, i.e., not mode-locked. The resulting spectra are given in
Influence of Sample Temperature
To exclude thermal emission as a source of the white-light multiple spectra at different sample temperatures were obtained using the steady-state setup with the 980 nm, 200 mW laser diode for excitation. The excitation density was held constant for all measurements. Here, the sample was cooled by liquid nitrogen in the flow cryostat in contrast to all other measurements. The resulting spectra are shown in
Light Microscopy
Bright field images of cluster powder layers used to generate supercontinuum were obtained using a standard microscope (Askania RMAS) in reflection geometry. The images were recorded using a Panasonic KR222 CCD-camera. For sample preparation, the powder was dispersed on a coverslip and then capped by another. On a longer-range scale of about 100 μm the powder layer is very inhomogeneous with empty spaces between fully covered areas (see
Microscopy photographs of the compounds 4, 5 and 6 are taken with a stereo microscope (Carl Zeiss-STEMI SV 6) equipped with a standard CMOS camera. The compounds 4 and 5 are obtained as amorphous powders (cf.
Measurements of the Nonlinear Optical Response
The nonlinear responses of the samples are measured using the setup depicted in
Conversion Efficiencies
Both Mie and Rayleigh scattering are very efficient as the samples are very inhomogeneous and the grain size is in the (sub-)μm range (see light-microscopic investigations above and
As first method, the efficiency was measured only in forward direction: a high-sensitivity thermal power meter (Thorlabs S401C) was placed behind the sample. Benefit of this method is that power density impinging on the detector is relatively high resulting in an accurate estimation of the emitted power. Different filters were placed in front of the detector in order to ensure that only the desired powers are measured, i.e., a 3 mm thick Schott color glass filter (RG850) discriminated the laser intensity and a 900 nm cut off hard-coated short pass filter with more than five orders of magnitude rejection was used to measure the white light emission.
This yielded a power of 400 mW with only two coverslips without sample in the beam path. Upon insertion of sample in the beam path, this is reduced to 290 mW; however, it was initially mounted out of focus so that the excitation density is below the supercontinuum threshold and no white light emission occurs. This loss of transmitted laser power is due to the efficient scattering of the sample. Powers of 1.6 mW and 7.36 mW were measured for the white light and the residual laser, respectively, once the sample is placed in the focus and the supercontinuum threshold is overcome. This leads to an efficiency of around 0.5%, but changing the excitation spot size by moving the sample into focus also changes the scattering and thus leads to an underestimation of the efficiency.
To account for the backscattering, the inventors used a 20 cm diameter integrating sphere. While this reduces the errors due to scattering, one can no longer separate the transmitted and scattered contributions and the power density on the detector will be lower resulting in a larger uncertainty of the measured power. This setup yields a laser power of 2.1 mW at the 5 mm diameter output port below supercontinuum threshold. Above threshold, the inventors find powers of 280 μW for the white light and 750 μW for the residual laser, yielding an efficiency of 20.74±5.51%.
To support these values, the inventors repeated the measurements using a calibrated Si-diode based power meter. While this ensures higher accuracy of the power determination due to its larger sensitivity, a proper spectral response needs to be taken into account. The inventors hence used two band pass filters with transmission of 440±10 nm or 632.8±3 nm to measure the power of two different spectral regions. These values were set in proportion to the overall emitted powers by scaling them with the corresponding emitted spectrum. This way, supercontinuum efficiencies of 16.71±10.96% and 9.05±6.02% are found using the 440 nm filter and the 632 nm filter, respectively.
Thresholds
The onset of the supercontinuum generation and the destruction limit of the sample are determined in a setup similar to the steady-state white-light spectroscopy setup discussed above. Now, the spectrometer was replaced by a higher throughput system. This is necessary to ensure more than 4 orders of magnitude in detection sensitivity. The driving laser was focused to a spot size of 0.00138 cm2. The onset of white light generation was observed for ˜1 mW, whereas the sample degenerated above ˜70-80 mW. This yields a threshold value of 0.7 W/cm2 for the onset of supercontinuum generation, and a destruction threshold of 50 W/cm2.
Comparison to Thermal Black-Body Emitter
To further exclude thermal radiation as the white-light source the respective color temperature for every spectrum obtained in the pump-density dependence series was calculated. Then the emitted powers for every color temperature were estimated by integrating the respective spectrum.
The setup used to measure the spectra does not yield absolute values of emitted power hence only the relative powers can be compared. The normalized powers plotted vs. color temperatures are shown in
Furthermore a thermal process can be excluded to be the source of white-light radiation by the fact that the compound decomposes above 573 K (see
Preparation for Immobilization on Semiconductor Surfaces
A freshly prepared hydrogen-terminated Si (001) surface or an oxide-terminated GaAs (001) surface and 10 mg 1 were placed next to each other in a glass vessel under Ar atmosphere. The vessel was heated to 523 K for 15 minutes.
Subsequently, the surface was washed with THF, dried in high vacuum and stored in argon atmosphere. For measurements electron transparent foils of the molecular layers on GaAs (001) and Si (001) substrates were prepared in [110] zone axis of the substrates by conventional mechanical polishing followed by 5 KeV argon ion milling from both sides with an angle of incidence of 4° in a Gatan precision ion polishing system. Final polishing was carried out at 1.7 keV to reduce the amount of amorphous material on the samples.
Electron Microscopy Deposited on a Si (001) Surface
The high angle annular dark field (HAADF)-Scanning TEM (STEM) measurements were carried out in a double aberration corrected JEOL 2200 FS, operating at 200 kV. A beam convergence semi-angle of 24 mrad was used and the annular detector was set to collect electrons scattered in the range between 73 and 173 mrads. For EDX spectroscopy in the STEM a Bruker Quantax X-Flash detector was used. The clusters form a perfectly amorphous layer on an H-terminated Si substrate as can be seen from
White-Light Spectrum Simulation
Without being confined to a certain theory, the principle idea behind the white-light generation mechanism is the reemission from an accelerated electron in an anharmonic molecular ground-state potential. For the simulation, the electron experiences the simplified anharmonic potential (U) of the form:
U(x)=½mω02·x2+⅓ma·x3 (51)
Here, x denotes the elongation of the electron from the potential minimum, m is the electron mass, ω0 the normal mode of the oscillator, and a the strength of nonlinearity. This potential results in a restoring force of the form:
F(x)=−mω02·x−ma·x2 (S2)
To get a rough estimate of the nonlinearity, we apply Miller's rule, i.e., for elongations equal to the size (d) of the oscillator the linear and nonlinear contributions to the restoring force become comparable. Inserting the size in (S2) leads to the following expression for a:
Using this substitution the inventors get the equation of motion of the electron:
Here, γ is the restoring force of the oscillator that is comparable to damping caused by radiative loss and E(t) is the driving external electric field. This differential equation is solved numerically using the odeint algorithm of the SciPy Phython library. Calculations are performed on a time scale up to 100 ps width a step size of 0.1 fs. The electric field was assumed to be sinusoidal with the frequency of the pump-laser used in the experiment, for the used field-strength as well as the other parameters see: Table 3,
Number | Date | Country | Kind |
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16174060.0 | Jun 2016 | EP | regional |
Filing Document | Filing Date | Country | Kind |
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PCT/EP2017/063274 | 6/1/2017 | WO | 00 |