Patent Application
20220048002
This disclosure concerns a versatile method for doping diamond by adding dopants into a carbon precursor and producing diamond at high pressure, high temperature conditions.
The characterization and manipulation of dopants in diamond has generated a wide range of applications spanning quantum computing, sensing, and cryptography, the determination of interstellar origin in meteoritic samples, and biolabeling, due to the remarkable properties of the diamond host.
The dense diamond lattice exhibits a negligible immune response, maintains a wide bandgap, and, notably, restricts heteroatom defect diffusion at temperatures far above the diamond-graphite phase line at atmospheric pressure. For example, a common defect in diamond, substitutional nitrogen, does not diffuse at temperatures below 2000° C.
In quantum sensing applications, this low diffusion coefficient enables the reliable use of single-defects like the nitrogen vacancy center (NV−) to optically measure local spatiotemporal variations, which modify the defect's spin precession rate, without fear of color center migration over long time scales.
Similar applications in quantum cryptography have been proposed for the negatively-charged, silicon-divacancy (SiV−) center. Because diffusion doping is not practical in diamond at ambient pressure, ion implantation is typically used to incorporate heteroatomic defects. This process relies on Poisson statistics, SRIM calculations, and masking techniques to control color center generation in chemical vapor deposition (CVD) diamond substrates.
However, ion implantation also creates significant lattice damage, fragmentation of ions, and cannot deterministically produce polyatomic defects.
Due to these challenges, progress in single-defect applications often occurs by bulk defect production with implantation followed by confocal-scanning searches for ideal color centers.
The current state-of-the-art method for incorporation of dopants into nanodiamond requires ion implantation. However, during implantation, accelerated ions dissociate as they pass through a pre-grown diamond lattice, limiting the composition and location of the resulting color centers achievable with this top-down process, and introducing unwanted radiation-induced defects into the diamond lattice.
In contrast, our synthesis of a doped amorphous carbon precursor and transformation at high pressure, high temperature (HPHT) conditions, we are able to flexibly incorporate dopants across much of the periodic table, including nominally non-reactive species such as noble gases.
Our alternative method for doped, diamond synthesis is high pressure, high temperature (HPHT) equilibrium phase conversion. While HPHT processes have produced doped diamonds, the rational formation of heteroatomic defects has remained elusive.
In addition, HPHT experiments, including diamond syntheses, conventionally employ noble gas pressure media, which, if incorporated into the lattice, have been proposed as defects for quantum sensing.
However, to date, noble gas defect formation, such as xenon-related dopants, has been restricted to ion implantation. Despite its nearly-ubiquitous role in high pressure experiments, noble gas pressure media is widely considered to be inert, and there are no studies regarding the conditions that lead to incorporation within the diamond lattice at HPHT conditions.
To overcome diamond's low diffusion coefficient and to study the incorporation of noble gas dopants without ion implantation, we created a bottom-up methodology to dope diamond by first synthesizing a doped amorphous carbon precursor and then converting it to diamond at HPHT conditions in a noble gas environment. This allows us to integrate the desired dopant into carbon while it is thermodynamically stable with traditional synthetic chemistry techniques, rather than rely on ion implantation into a metastable diamond substrate and investigate noble gas incorporation at HPHT.
This disclosure concerns a versatile method for doping diamond by adding dopants into a carbon precursor and producing diamond at high pressure, high temperature conditions.
Molecularly doped diamond is a new state of matter in which dopants in the form of atoms and molecules are directly incorporated into diamond nanoparticles during high pressure, high temperature synthesis, in order to tune the optical and other functional properties.
The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion implantation, by synthesis of a doped amorphous carbon precursor and transformation at high temperatures and high pressures.
To explore this bottom-up method for color center generation, we rationally create silicon-vacancy defects in nanodiamond and investigate them for optical pressure metrology. In addition, we show that this process can generate noble gas defects within diamond from the typically-inactive argon pressure medium, which explains the hysteresis effects observed in other high pressure experiments and the presence of noble gases in some meteoritic nanodiamonds. Our results illustrate a general method to produce color centers in diamond, and enable the controlled generation of designer defects.
The following description and drawings set forth certain illustrative implementations of the disclosure in detail, which are indicative of several exemplary ways in which the various principles of the disclosure may be carried out. The illustrated examples, however, are not exhaustive of the many possible embodiments of the disclosure. Other objects, advantages and novel features of the disclosure will be set forth in the following detailed description when considered in conjunction with the drawings.
This invention concerns a versatile method for doping diamond by adding dopants into a carbon precursor and producing diamond at high pressure, high temperature conditions.
The molecularly doped diamonds are synthesized in two stages. In the first step, a nanoporous carbon aerogel is produced. Carbon aerogels are synthesized from adding resorcinol, formaldehyde (37 wt-% methanol-stabilized aqueous solution), and hydrochloric acid (37 wt-%) to acetonitrile to achieve a molar ratio of resorcinol to formaldehyde, hydrochloric acid, and acetonitrile of 1:2, 8.4:1, and 1:76.
Molecular dopants that can be dispersed into the organic precursors, e.g., Si, are then added to the sol-gel. For silicon-doped carbon aerogel, we added tetraethyl orthosilicate (98 wt-%) at a final molar ratio of 4.5×10−9 M. The solution is ultrasonicated until the gel solidifies, typically 30 minutes.
Next the acetonitrile solvent is exchanged with ethanol 4 times over 5 days. The gel is dried with supercritical CO2 in an autoclave to prevent pore collapse due to capillary pressure. The gels are then pyrolyzed at 1000° C. in an inert atmosphere for 4 hours to remove oxygen moieties, and sinter the aerogel structure to prevent pore collapse during subsequent processing.
In the second step, the amorphous carbon aerogel is converted under high temperature and pressure (HPHT) into nanodiamond aerogel.
To achieve HPHT conditions, we employed a laser-heated diamond anvil cell (DAC). First, we dimpled a rhenium gasket and drilled a hole in the center of the gasket to form the walls of the high-pressure chamber. We then returned the gasket to the DAC and transferred the carbon aerogel and finely-ground ruby crystals into the DAC's cavity.
The carbon aerogel and ruby act as a diamond precursor and a pressure monitor, respectively. To remove adsorbed species from the aerogel, we placed the DAC into a sealed chamber and flowed argon gas over the aerogel for at least 30 minutes.
Afterward, we used liquid nitrogen to condense the flowing argon and subsequently tightened the DAC to trap liquid argon in the DAC's chamber. By condensing liquid argon from a gaseous argon environment, we infiltrate the carbon aerogel precursor's pores with gaseous and then liquid argon to maintain the aerogel pore structure.
Other noble gases (Kr, Xe, Ne) can be substituted for Ar, at the appropriate liquefaction temperature.
Finally, the DCA loaded with the noble-gas infiltrated aerogel precursor pressurized is pressured to above 20 GPa to thermodynamically favor diamond formation and heated to above 2000 K with a near-infrared, continuous laser.
The conversion of the aerogel to diamond is confirmed with in situ Raman spectroscopy.
There are several advantages to our method.
One advantage of our molecularly doped nanodiamonds is that the direct incorporation of dopants without the need for ion implantation broadens the range of possible molecular dopants to those that can be dispersed in the aerogel precursor.
Dopants that are not stable at the voltages required for ion implantation into diamond, as well as noble gases or other volatiles can be incorporated.
In addition, the HPHT molecularly-doped diamonds have fewer lattice defects because they are not ion irradiated.
The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects.
Presented here is a solution to these long-standing problems.
Here, we present a versatile method to dope diamond without ion implantation, by synthesis of a doped amorphous carbon precursor and transformation at high temperatures and high pressures. To explore this bottom-up method for color center generation, we rationally create silicon-vacancy defects in nanodiamond and investigate them for optical pressure metrology.
In addition, we show that this process can generate noble gas defects within diamond from the typically-inactive argon pressure medium, which may explain the hysteresis effects observed in other high pressure experiments and the presence of noble gases in some meteoritic nanodiamonds.
Our results illustrate a general method to produce color centers in diamond, and may enable the controlled generation of designer defects.
To overcome diamond's low diffusion coefficient and to study the incorporation of noble gas dopants without ion implantation, we propose a bottom-up methodology to dope diamond by first synthesizing a doped amorphous carbon precursor and then converting it to diamond at HPHT conditions in a noble gas environment.
This allows us to integrate the desired dopant into carbon while it is thermodynamically stable with traditional synthetic chemistry techniques, rather than rely on ion implantation into a metastable diamond substrate and investigate noble gas incorporation at HPHT.
Here, we synthesized a nanostructured carbon aerogel precursor with a controlled chemical composition, and subjected it to HPHT conditions in a laser-heated diamond anvil cell (DAC) with an argon pressure medium
Bright-field transmission electron microscopy (BF-TEM) and selected area electron diffraction (SAED) demonstrate that the aerogel consists of 6.8±1.9 nm amorphous carbon grains. We tuned the chemical composition of the aerogel grains by adding tetraethyl orthosilicate (TEOS) molecules directly to the mixture as it gelled. Energy dispersive X-ray spectroscopy (EDS) confirmed that silicon dopants were incorporated throughout the carbon precursor material.
To synthesize diamond, we placed the doped carbon precursor into a diamond anvil cell and condensed solid argon within the high-pressure chamber to infiltrate the microstructure of the aerogel.
We subsequently pressurized the cell above 20 GPa to thermodynamically favor diamond formation and drove grain growth by heating above 2000 K with a near-infrared, continuous laser.
This pressure and temperature can be varied, as it is sensitive to the temperature, pressure, and time. Therefore, other conditions can be used, for example, pressures of about 16 GPa and temperatures of about 1600 K. Furthermore, another example involves pressures of about 16.3 GPa and temperatures of about 1850 K.
To characterize the recovered material, we examined BF-TEM, SAED, and electron energy loss (EEL) spectroscopy. We found that the recovered material exhibited nanocrystalline domains with interlayer distances corresponding to cubic diamond.
The nanodiamond grain sizes ranged from 1-200 nm, indicating that significant carbon diffusion occurs during HPHT synthesis, which was likely enhanced by the high synthesis temperatures that surpass the melting point of argon at 20 GPa (1580 K).
The carbon K-edge EEL spectra of pure diamond has a characteristic near-edge structure with prominent a* peak at 290 eV a dip at 302.5 eV. The carbon K-edge spectrum of the recovered material contained both features, further indicating that the HPHT treatment formed cubic diamond, as well as a small pre-edge peak at 285 eV. This pre-edge feature corresponds to a n* excitation associated with sp2 carbon.
As observed in previous HPHT and CVD experiments, this sp2 carbon likely stems from nanodiamond surface reconstruction and incomplete sample heating due to the self-limiting absorption of amorphous carbon as it converts to diamond.
Low energy loss data and Raman scattering from the recovered material similarly indicate the prevalence of sp3 carbon in a diamond structure with a small amount of sp2 carbon.
EDS and EEL spectroscopy allow us to measure the chemical composition of the recovered nanodiamond and confirm the presence of dopants, including nitrogen, silicon, and argon. Other dopants include any atom or molecule that can be dissolved into the sol gel precursor at about room temperature can be incorporated into the amorphous carbon precursor and any noble gas that can be liquefied can be incorporated. The Z-contrast of high-angle annular dark field scanning transmission electron microscopy (STEM-HAADF) images identify individual atoms and clusters.
Combined, these data unambiguously demonstrate that silicon dopants added to the carbon aerogel precursor remain in and/or on the nanodiamond product after heating, despite significant grain growth.
The presence of argon within the recovered material, despite decompression to atmospheric pressure, transfer to a TEM grid, and analysis at ultrahigh vacuum conditions, demonstrates robust incorporation within the diamond lattice, rather than surface adsorption.
We observed argon in all recovered samples synthesized at a range of pressures and temperatures from 20 to 25 GPa and 1800 to 3000 K. While other reports have demonstrated the effect of noble gas pressure media on samples at elevated pressures, such as partitioning of helium in SiO2, this is the first confirmation of noble gas incorporation and recovery from HPHT.
These results suggest that the aerogel structure allows argon to incorporate within its micropores during compression and that grain growth during laser heating traps these atoms within the lattice.
For optoelectronic color center applications in diamond, this represents a new methodology for the incorporation of noble gas defects, e.g. xenon, for quantum computing and sensing.
In addition, noble gas pressure media are almost exclusively used in HPHT experiments because they remain hydrostatic to high pressures and are chemically and physically inert. The incorporation of noble gas pressure media into materials at HPHT conditions challenges the view of complete inactivity, and could explain hysteresis effects in prior DAC experiments.
It can also provide an explanation for how noble gas atoms are incorporated into nanodiamonds in astrophysical environments.
The PL spectra of all the recovered material contain optically-active color centers from NV centers. The shoulders at 575 and 637 nm and the broad feature centered at 700 nm are uniquely characteristic of NV0 and NV− zero phonon lines (ZPLs) and phonon side bands, which have been observed in multiple HPHT reports due to atmospheric N2 incorporation. PL signal from the argon is neither observed nor expected.
However, the silicon-doped carbon aerogel contains a peak at 739 nm, corresponding to the SiV− color center, that is not present in undoped carbon aerogel.
These observations confirm that dopants added to the carbon aerogel precursor persist within the nanodiamond lattice and provide a new mechanism for engineering dopants in diamond.
Both SiV and NV are lower energy states than their substitutional silicon and nitrogen counterparts due to lattice relaxation, as observed in Jahn-Teller distortion of the lattice.
Unlike ion implantation, which requires annealing to drive vacancy diffusion to activate incorporated heteroatoms, optically-active color centers form immediately upon HPHT conversion to diamond.
This suggests that as the diamond lattice forms around the heteroatomic silicon and nitrogen atoms, the lowest energy structure forms immediately. While silicon atoms have been doped into diamond before, the process involved ion implantation or complete chemical breakdown in a plasma which limited controllable heteroatom defect formation.
This bottom-up approach illustrates the possibility of a new doping paradigm for diamond where molecular dopants can be designed with the precise heteroatomic stoichiometry and three-dimensional stereochemistry to create a wide range of multifunctional polyatomic point defects.
As discussed above, color centers in diamond are attractive materials for optical sensing applications due to their high stability in the chemically inert diamond lattice. Due to its narrow linewidth, the SiV− center may act as a high-resolution pressure sensor. To evaluate the defect for optical pressure metrology and illustrate the efficacy of bottom-up doping, we collected pressure-dependent photoluminescence spectra, which reveals a 0.98 meV/GPa slope from 0 to 25 GPa.
We employed ab initio calculations to model the pressure-dependence of the SiV− by fully simulating a nearly-spherical C119SiH104 nanodiamond (˜1.2 nm in diameter) containing a SiV− defect under the effect of the uniform hydrostatic pressure with density functional theory using the Gaussian electronic structure package.
These theoretical results predict a 0.8 meV/GPa shift from 0 to 25 GPa, in close agreement with experimental observations. Extending the simulation up to 140 GPa demonstrates the viability of optical pressure metrology with SiV− to high pressures. To date, the high quantum efficiency, narrow linewidth d-d transitions of Cr3+ in alumina (ruby) have made it the nearly-ubiquitous choice to measure pressure at in high pressure DAC experiments. However, ruby undergoes a phase transition at 94 GPa at 1300° C., making it unsuitable for the next generation of HPHT experiments, which have recently reached the terapascal range. On the other hand, diamond is the thermodynamically-stable polytype of carbon at all temperatures and pressures above 1 GPa until melting. The lack of phase transformation suggests that SiV−-doped nanodiamond may succeed at conditions where ruby fails.
The rational incorporation of silicon by doping the carbon precursor with TEOS and argon by employing an argon pressure media into nanodiamond illustrate the potential impact of this doping methodology for doped nanodiamond applications, like pressure metrology, without ion implantation. Rather than synthesizing diamond followed by heteroatom ion implantation, vacancy center annealing, and confocal searches for color centers, the HPHT conversion of doped carbon can directly form color centers.
For single-defect applications, this research opens the door to the incorporation of more complex defects into diamond with structures defined by the chemical dopant added into the carbon precursor. If diamond nucleates prior to dissociation of the dopant, defects can be added with chemical precision limited only by molecular synthesis. For extraterrestrial nanodiamonds, where dopants in diamond are used to fingerprint the presolar and interstellar environment, this demonstration unveils the DAC as a tool to study HPHT doping that could occur in astrophysical environments. Given the prevalence of noble gas pressure media, these results have broad implications for high pressure experiments, where, to date, noble gasses had been considered inert.
The above examples are merely illustrative of several possible embodiments of various aspects of the present disclosure, wherein equivalent alterations and/or modifications will occur to others skilled in the art upon reading and understanding this specification and the annexed drawings. In addition, although a particular feature of the disclosure may have been illustrated and/or described with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for any given or particular application. Also, to the extent that the terms “including”, “includes”, “having”, “has”, “with”, or variants thereof are used in the detailed description and/or in the claims, such terms are intended to be inclusive in a manner similar to the term “comprising”.
This application is a non-provisional of, and claims priority to and the benefits of, U.S. patent application Ser. No. 16/297,338 filed on Mar. 8, 2019, and U.S. Patent Application No. 62/645,098 filed on Mar. 19, 2018, the entirety of each is hereby incorporated by reference.
| Number | Date | Country | |
|---|---|---|---|
| 62645098 | Mar 2018 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 16297338 | Mar 2019 | US |
| Child | 17512929 | US |
