This invention relates to a printhead used in equipment for forming, through successive scanning operations, black and colour images on a print medium, usually though not exclusively a sheet of paper, by means of the thermal type ink jet technology, and in particular to the head actuating assembly, and the relative manufacturing process.
Depicted in
The printer may be a stand-alone product, or be part of a photocopier, of a plotter, of a facsimile machine, of a machine for the reproduction of photographs and the like. The printing is effected on a physical medium 46, normally consisting of a sheet of paper, or a sheet of plastic, fabric or similar.
Also shown in
x axis: horizontal, i.e. parallel to the scanning direction of the carriage 42; y axis: vertical, i.e. parallel to the direction of motion of the medium 46 during the line feed function; z axis: perpendicular to the x and y axes, i.e. substantially parallel to the direction of emission of the droplets of ink.
The composition and general mode of operation of a printhead according to the thermal type technology, and of the “top-shooter” type in particular, i.e. those that emit the ink droplets in a direction perpendicular to the actuating assembly, are already widely known in the sector art, and will not therefore be discussed in detail herein, this description instead dwelling more fully on only those features of the heads and the head manufacturing process of relevance for the purposes of understanding this invention.
The current technological trend in ink jet printheads is to produce a large number of nozzles per head (≧300), a definition of more than 600 dpi (dpi=dots per inch), a high working frequency (≧10 kHz) and smaller droplets (≦10 pl) than those produced in earlier technologies.
Requirements such as these are especially important in colour printhead manufacture and make it necessary to produce actuators and hydraulic circuits of increasingly smaller dimensions, greater levels of precision, and strict assembly tolerances.
These drawbacks are solved, for instance, by means of the monolithic printhead described in the Italian patent application TO 99A 000610, a section of which is illustrated in
In the patents U.S. Pat. No. 6,000,787 and EP 0 936 070, heads are described the chambers of which are produced laterally with respect to the grooves: as a result, the resistors are adherent to a body of Silicon having a much greater thickness than that of the lamina and therefore exempt from the above-mentioned vibrations. However the solutions described in the patents quoted do not solve the problem described below.
It is in fact important to ensure that the volume and speed of the droplets successively emitted are as constant as possible, and that no “satellite” droplets are formed as these, with a trajectory generally different from the main droplets, are distributed randomly near the edges of the graphic symbols, reducing their sharpness.
This problem is solved, for instance, by means of the head with multiple ink feeder channels described in the Italian patent application AO 99A 0002.
The patent quoted above discloses the details of a method for calculating the width b and the number N which permit to render minimal the time constant τ of the column of ink that fills the ejector 55′ and at the same time to render critical the damping of the oscillations of the meniscus 54 following emission of the droplet 51, for the purposes of obtaining a high emission frequency of the droplets, of ensuring that their volume and speed are as constant as possible, and of avoiding the formation of satellite droplets. This head, however, is not monolithic.
A further problem found in thermal ink jet printheads will now be illustrated. If various ejectors are driven simultaneously, to print for instance a vertical line, some of the tracks belonging to the microelectronics are passed through by the sum of the driving currents. This sum varies in function of the number of ejectors activated on each occasion, and in turn produces a variable voltage drop.
It is preferable to command the ejectors at different times, so that only the current needed for a single ejector passes through the tracks each time and the voltage drops on each are therefore small and constant. In addition, it is necessary for any two ejectors that are immediately successive in the time sequence of commands not to be adjacent, the purpose being to avoid the phenomenon of intermodulation, known to those acquainted with the sector art.
For these reasons, the ejectors belonging to each column parallel to the y axis are staggered progressively by an interval parallel to the x axis. Compensation for the mechanical stagger is provided by a corresponding time delay in the commands, with the purpose of obtaining the desired figure from printing.
On account of the mechanical stagger, the length G of the duct 53, or the length g of the elementary ducts 72, are different for the different ejectors, with a consequent variation in the time constant τ and in criticality, among the ejectors, of the damping of the oscillations of the meniscus 54.
The object of this invention is that of producing a monolithic head in which the width of the lamina is the lowest possible, so that mechanical robustness of the lamina is maximal.
A further object is that of producing a monolithic head in which the lamina is not subjected to vibrations caused by the sudden formation and successive collapse of the vapour bubble.
Yet another object is that of rendering the emission frequency of the droplets of ink maximal by producing a time constant τ of the ejector that is as short as possible, while simultaneously satisfying the critical damping condition of the meniscus.
A further object is that of producing the time constant τ and the critical damping condition of the meniscus with high precision.
Another object is that of rendering the time constant T and critical damping condition of the meniscus dependent solely upon the dimensions of the elementary ducts, and therefore insensitive to the mechanical tolerances with which the other parts of the ejector are made.
Yet another object is that of increasing the degrees of freedom of design of the ejector, disposing of the additional parameter that is the number of elementary ducts in parallel.
Another object is that of staggering the positions of the successive ejectors of a column without altering either the time constant τ or the criticality of the damping of the oscillations of the meniscus of the different ejectors.
Another object is that of filtering out any impurities in the ink.
These and other objects, characteristics and advantages of the invention will be apparent from the description that follows of a preferred embodiment, provided purely by way of an illustrative, non-restrictive example, and with reference to the accompanying drawings.
In the non-restrictive example of
The whole comprising a chamber 74, a nozzle 56, a resistor 27 and the elementary ducts 75 is called an ejector 73.
The new lamina 67 no longer contains the resistor 27 and is therefore of lesser width K with respect to the width J of the lamina 64 of the known art: this gives it greater mechanical robustness. Also traced in the section B-B are two vertical dashed lines which represent the minimum and maximum value that the width K of the lamina 67 can have due to its manufacturing tolerances. By way of a non-restrictive example, the lamina 67 has a width K of between 100 and 200 μm and a thickness p of between 1 and 50 μm, and preferably between 3 and 10 μm. The resistor 27, always external to the lamina 67, adheres to a body of Silicon exempt from vibrations.
To describe the operation of an ejector 73 of this head, an electrical analogy is used in which the following equivalences are established:
In the equivalent diagram of
The front leg 70 comprises a fixed impedance Lf, Rf corresponding substantially to the chamber 74, a variable impedance Lu, Ru, corresponding substantially to the nozzle 56, and a switch T which, during the phase in which the droplet 51 is formed, introduces a variable resistance Rg corresponding substantially to the droplet itself, whereas, during the phases of withdrawal of the meniscus 54, of filling of the nozzle, of subsequent oscillation and damping of the meniscus, it introduces a capacitance Cm corresponding substantially to the meniscus itself.
Ejection of the ink takes place in accordance with the following phases:
a) An electronic control circuit supplies energy to the resistor 27, so as to produce local boiling of the ink with formation of the bubble 65 of vapour in expansion. During this phase, in the equivalent electric circuit of
b) The electronic circuit completes the delivery of energy to the resistor 27, the vapour condenses, the bubble 65 collapses, the droplet 51 detaches itself, the meniscus 54 withdraws emptying the nozzle 56. There remain the two opposing flows Ip and Ia. In this phase, in the equivalent circuit of
c) The bubble 65 has disappeared, the meniscus 54 demonstrates its capillarity and goes back towards the outer edge 66 of the nozzle 56 sucking new ink 142 into the nozzle 56. Its return completed, the meniscus 54 remains attached to the outer edge 66 oscillating like a vibrating membrane. In the equivalent circuit of
To obtain optimal operation of the ejector 55, it is necessary for the meniscus 54, at the end of the step c), to reach the idle state rapidly without oscillating. In this way, the ink 142 does not wet the outer surface of the nozzle plate 106, thereby avoiding alterations of speed and volume of the successive droplets.
For a given nozzle 56, the parameters Lu, Ru and Cm belonging to the front hydraulic part 70 of the ejector 55 are set and therefore the values of R and L according to the criteria set down below can only be obtained by acting on design of the rear hydraulic part 71.
The expression in function of the time of i, which represents the flow, is given by the known relation:
where Vm represents the pressure generated by the meniscus 54, which is negative during the filling phase, and τ is the time constant measured in seconds of the RLC circuit of
To obtain maximum speed in filling of the nozzle 56, the flow I must be rendered maximal, and for this to happen, L and τ must be rendered minimal.
Also, for the meniscus 54 to reach the idle state rapidly without oscillating, the equivalent circuit of
For an elementary duct 75 having a circular section of radius r and length l, the following known relations apply:
where ρ is the density of the ink in kg/m3, v the viscosity of the ink in m2/s, and all lengths are measured in metres.
The time constant τ is a function of the radius r, while it is independent of the length f.
It is possible to determine a value of r which gives values R and L such as to produce critical damping, according to the expression (2). However the same value of r, substituted in (5), gives a value of τ which limits the flow i, according to the relation (1), and accordingly also limits the emission frequency of the droplets. Moreover, it is not possible to modify the length f at will, as this depends on the thickness p of the lamina 67, which is subject to other technological and functional constraints.
To increase the emission frequency of the droplets, it is necessary to render the time constant τ extremely short, while at the same time satisfying the critical damping condition: this problem is solved in this invention by producing, for each chamber 74, a plurality of N elementary ducts 75 in parallel. A method of procedure for calculating the correct number N will now be described.
The time constant τ is a function of the radius r of each single duct 75, while it is independent of the number N of ducts in parallel, as indicated by the relation (5). It is therefore possible to obtain the shortest possible time constant τ by selecting the smallest possible value for r, compatibly with technological feasibility: in practice, the radius r according to this invention is between, though not exclusively, 4 and 12 μm.
Having thus determined the geometrical dimensions of the single duct 75, values R′ and L′ are obtained for the equivalent resistance and inductance of each duct 75 using the relations (3) and (4). The total resistance R and the total inductance L of the circuit equivalent to the plurality of ducts 75 in parallel are expressed by means of the known formula for parallel impedances, and are:
R=R′/N (6)
L=L′/N (7)
It is now possible to obtain the value of N needed to render damping critical, by substitution of the expressions (6) and (7) in (2), which becomes:
and which enables us to obtain
The value thus obtained for N is generally not a whole number, and must be rounded to the next nearest whole number. If the damping obtained is too different from critical damping, due to the rounding, adjustments may still be made to the various parameters described, by using for instance different values for the radius of one or more elementary ducts 75.
Included in the figure is a junction channel 68, which though present in all the ejectors, is depicted with a shaded surface on only one thereof, having average length F, average width H and height k.
In the section B-B, two dashed vertical lines are also traced representing the minimum and maximum width K which it is possible for the groove 45 to have. In any case, the resistors 27 are always external to the groove 45.
On account of the stagger s, the average lengths F of the junction channels 68 are different for the different ejectors, with consequent variation of the hydraulic impedance, of the time constant τ and of criticality of the damping of the oscillations of the meniscus 54 among the different ejectors. In this invention, this problem is solved by means of the following stratagems:
first—the junction channel 68 is made with a width H as wide as possible, so that it has an impedance that is negligible with respect to that of the elementary ducts 75 and possesses sufficient space on which to produce a greater number of elementary ducts 75. There is still a difference between the hydraulic impedances of the different ejectors, which has to be compensated;
second—the difference between the hydraulic impedances of the different ejectors is compensated for. This could be done by modifying the width H, linked to the length F by the relations
but, to keep R and L constant, the width H would be inversely proportional to F, and would therefore undergo significant variations upon variation of F.
It is more convenient to leave the width H unaltered and instead modify the radius r of the elementary ducts 75 in such a way that the total impedance is the same between the different ejectors. The relations (3) and (4) indicate that the resistance R and the inductance L depend on r respectively to the power of four and to the square, and it is therefore possible to completely compensate the effect of the variation of F with small adjustments of r. At the same time, the critical damping is maintained by means of correctly determining the number N of the ducts 75.
The values of the resistance R and of the inductance L are precise and repetitive, since the radius r is defined with great exactness using photolithographic techniques, and in addition the length f is great enough to give a well-defined and adjustable impedance, being made in the thickness of the lamina 67. The technique employed in producing the latter-named also ensures that tight tolerances are respected.
The manufacturing process of the ejectors 73 for the monolithic ink jet printhead 40 is identical to that described in detail in the above-quoted Italian patent application No. TO 99 A 000610, which is incorporated herein for reference.
This process initially comprises the production of a wafer 60, as shown in
In a first part of the process, when all the dice 61 are still joined in the wafer 60, the microelectronics 62 are made and at the same time, taking advantage of the same process steps and the same masks, the microhydraulics of each die 61 are produced in part.
In a second part of the process, on each of the dice 61 still joined in the wafer 60, the structural layers 107 are made and the microhydraulics 63 completed by means of operations compatible with the first part of the process. At the end of the process, the dice 61 are separated by means of a diamond wheel: the whole consisting of a die 61 and a structural layer 107 thus comes to constitute an actuator 50, as may be seen in
A second embodiment of the manufacturing process consists in carrying out the operations in the order indicated in the flow diagram of
In the step 200, a wafer 60 of Silicon is available as it is at the end of the first part of the process, comprising a plurality of dice 61, with their microelectronics 62 completed, protected by the protective layer 30 of Si3N4 and SiC, on which the conducting layer 26 is deposited, and prepared for the subsequent operations in the areas of microhydraulics 63′ adapted for production of the ejectors 73 constituting the microhydraulics 63.
In the step 201, a protective photoresist 32 is applied on the layer 26, in order to protect the entire wafer 60 in the successive operations. Voids are made in the protective photoresist 32 using known techniques, in order to leave the apertures 125 uncovered.
In the step 202, using as the mask the conducting layer 26, elementary holes 75′ are made in correspondence with the apertures 125, using for example a “dry” type technology known to those acquainted with the sector art as ICP (Inductively Coupled Plasma). The holes 75′ are blind holes and partly enter the substrate 140.
In the step 203, etching of the groove 45 commences, again using ICP technology, for instance. The portion of the groove 45 made in this phase, indicated as 45′, has its walls 126 substantially parallel to the plane y-z, and reaches a distance of between, for example, 100 and 150 μm from the N-well 36.
Depicted in
The protected photoresist 32 is removed in step 204.
In the step 205, applied on top of the conducting layer 26 is a positive photoresist having a thickness equal to the height that the chambers 74 will have, using for instance a centrifuge in a process known as spinner coating. The application is performed in such a way that the positive photoresist can also fill the elementary holes 75′, by means for instance of reducing the speed of the centrifuge during a first phase of the operation. Using a mask not shown in any of the figures, the photoresist is exposed to ultraviolet radiation only in correspondence with windows having the shape of that section parallel to the plane x-y that the future chambers 74 and future junction channels 68 will have. The intensity of the ultraviolet radiation is regulated in such a way that the positive photoresist is depolymerized only as far as the conducting layer 26, but not inside the elementary holes 75′. Finally development is performed, during which the portion of depolymerized photoresist is removed, which in this way leaves cavities having the shape of the future chambers 74 and the future junction channels 68, whereas the elementary holes 75′ continue to be occupied by the positive photoresist, indicated by the shading, which has remained polymerized as it has not been reached by the ultraviolet radiation.
Carrying out the operations in the order indicated by this second embodiment of the manufacturing process gives the advantage of effecting this step while the groove 45′ and the holes 75′ are not in communication, being separated by a layer of Silicon having a thickness of between, for example, 100 and 150 μm, and there is therefore no need to fill the groove with a temporary layer to protect the area in which the positive photoresist is developed.
In the step 206, electrodeposition of a metal, for instance Copper, Gold, or Nickel, is performed inside the cavities made in the step 203, in such a way as to form the sacrificial layers 31, having the shape of the future chambers 74 and future junction channels 68.
In the step 207, on the upper face 170 that contains the sacrificial layers 31, the structural layer 107 is applied of thickness preferably between 15 and 60 μm and consisting of an epoxy or polyamide type negative photoresist, which is partially polymerized, or consisting of an epoxy resin selectively deposited on the area 63′ intended to accommodate the ejectors 73.
In the step 208, etching of the groove 45 is completed by means of a “wet” technology, using, for example, a KOH (Potassium Hydroxide) or TMAH (Tetrametil Ammonium hydroxide) bath, as is known to those acquainted with the sector art. Etching of the groove 45 is conducted according to geometric planes defined by the crystallographic axes of the Silicon, and accordingly forms an angle α=54.7°. The etching is stopped automatically when the N-well layer 36 is reached by way of a method, called “electrochemical etch stop” and known to those acquainted with the sector art. Following this operation, the groove 45 remains bounded by the lamina 67, and the holes 75′ are through holes, their blind bottom having been removed.
In the step 209, the nozzles 56 are opened in the structural layer 107 by means, for instance of a laser drilling, the holes 75′ are freed of the positive photoresist, thereby producing the elementary ducts 75, and the areas corresponding to the soldering pads 77 and the die heads, not depicted in the figures, are freed of the negative photoresist.
In the step 210, hard baking of the structural layer 107 is effected, for the purpose of obtaining its complete polymerization.
In the step 211, the sacrificial layer is removed by means of an electrolytic process. The cavities left empty by the sacrificial layer in this way come to form the chambers 74 and the junction channels 68.
The technology described from step 205 to step 211 is known to those acquainted with the sector art, being that used to produce MEMS/3D (MEMS: Micro Electro Mechanical System).
In the step 212, etching is performed of the protective layer 30 of Si3N4 and of SiC in correspondence with the soldering pads.
In the step 213, the wafer 60 is cut into the individual die 61 using a diamond wheel, not shown in any of the figures.
Finally, in step 214, the following operations, again known to those acquainted with the sector art, are performed:
The step 206, electrodeposition of the sacrificial layer 31; the step 208, wet etching of the oblique walls of the groove 45 with an electrochemical etch stop; and the step 211, electrolytic removal of the sacrificial layer 31, require operations performed by means of electrochemical processes, during which specific layers belonging to all the dice 61 of the wafer 60 and, where applicable, all the segments into which the dice 61 are subdivided must be put at the same electrical potential.
This may be done advantageously as described in the Italian patent application TO 99A 000987, which is incorporated herein.
Number | Date | Country | Kind |
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TO2000A000335 | Apr 2000 | IT | national |
Number | Date | Country | |
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Parent | 10257261 | Oct 2002 | US |
Child | 10924818 | Aug 2004 | US |