Monolithically integrated semiconductor structure containing at least two devices in a common zone and technique for preventing parasitic transistor action

Abstract

to prevent a parasitic lateral transistor or thyristor effect in an integrated structure including a transistor and a further device sharing one common zone, a doped region which is more highly doped with regard to the common zone and which simultaneously constitutes a contact region is arranged between the components to be separated. This separating and contact region acts as a barrier reflecting an undesired minority carrier current flow injected from the further device. In the preferred embodiment, the transistor structure is a bipolar transistor and the further semiconductor device is a Schottky diode integrated into the collector zone of the bipolar transistor.

Description

Priority Claims (1)

Number	Date	Country	Kind
2534398	Aug 1975	DT

Continuations (1)

	Number	Date	Country
Parent	690224	May 1976