Claims
- 1. A random access memory comprising:
- a semiconductor substrate having a plurality of trenches formed in a form of rows and columns on a main surface of said substrate;
- a plurality of capacitors formed in lower portions of said trenches, respectively, each of said plurality of capacitors including a plate electrode composed of said semiconductor substrate, a capacitor insulating film formed thereon, a storage electrode formed on said capacitor insulation film and buried in each of said lower portions of said trenches;
- a plurality of MOS transistors formed in upper portions of said trenches, respectively, each of said transistors including:
- a channel formation region composed of a semiconductor film formed above a side surface of each of said upper portions of said trenches with a first insulating film interposed therebetween;
- a gate electrode formed above said channel formation region with a gate insulation film interposed therebetween and insulatively buried in each of said upper portions of said trenches, said gate electrode being formed so as to continuously extend on said main surface of said substrate in a direction of said rows to serve as a word line;
- a first impurity-doped region formed as said storage electrode and connected to a lower end of said channel formation region;
- a second impurity-doped region formed, above said main surface of said substrate, beside said gate electrode and along one side of said word line; and
- a plurality of bit lines each connected to said second impurity-doped region and formed continuously in a direction of said columns above said main surface of said substrate wherein said second-impurity doped region is shared by adjacent ones of said transistors arranged in the direction of said columns and is connected, exclusively when said gate electrode is supplied with an activation signal to make said channel formation region conductive, to an adjacent one of said second impurity-doped region through an upper end of said channel formation region interposed therebetween on said main surface of said substrate, thereby being continuously linked in the direction of said columns to be served as another bit line.
- 2. The memory according to claim 1, wherein said second impurity-doped region is shared by adjacent ones of said plurality of transistors arranged in the direction of said columns and each of said bit lines is connected to said second impurity-doped region shared by each two of said transistors.
- 3. The memory according to claim 1, wherein said second impurity-doped region is formed above said main surface of said substrate with a second insulating film interposed therebetween.
- 4. The memory according to claim 3, wherein a third insulating film is formed between said main surface of said substrate and said second insulating film under said second impurity-doped region.
- 5. The memory according to claim 1, wherein said second impurity-doped region is directly formed on said main surface of said substrate.
- 6. The memory according to claim 1, wherein adjacent transistors of said plurality of MOS transistors arranged in a direction of said bit lines share said second impurity-doped region with each other, thereby connecting said MOS transistors in series which include a plurality of second impurity-doped regions and each of said plurality of bit lines is connected to said plurality of second impurity-doped regions alternatively along the direction of said bit lines.
Priority Claims (4)
Number |
Date |
Country |
Kind |
4-063890 |
Mar 1992 |
JPX |
|
4-063891 |
Mar 1992 |
JPX |
|
4-242377 |
Sep 1992 |
JPX |
|
5-053171 |
Feb 1993 |
JPX |
|
Parent Case Info
This application is a Continuation of application Ser. No. 08/524,970, filed on Sep. 8, 1995, now abandoned which is a division of application Ser. No. 08/418,877 filed Apr. 7, 1995 which issued as U.S. Pat. No. 5,477,071 which is a continuation of application Ser. No. 08/036,534 filed on Mar. 19, 1993, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (1)
Number |
Date |
Country |
63-17553 |
Jan 1988 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
418877 |
Apr 1995 |
|
Continuations (2)
|
Number |
Date |
Country |
Parent |
524970 |
Sep 1995 |
|
Parent |
36534 |
Mar 1993 |
|