Patent Application
20190252614
The present invention relates to a mother plate, a method of manufacturing the mother plate, a method of manufacturing a mask, and a method of depositing organic light-emitting diode (OLED) pixels and, more particularly, to a mother plate using monocrystalline silicon in a process of electroforming a plated film, a method of manufacturing the mother plate, a method of manufacturing a mask, and a method of depositing OLED pixels.
Currently, research is being conducted on an electroforming method as a thin film manufacturing method. The electroforming method is performed by dipping an anode body and a cathode body in an electrolyte and electrodepositing a metal thin film on the surface of the cathode body by applying electricity, and thus ultra-thin films may be manufactured in a large quantity.
As a pixel deposition technique in an organic light-emitting diode (OLED) manufacturing process, a fine metal mask (FMM) scheme for positioning a thin metal mask (or a shadow mask) in contact with or very close to a substrate and depositing an organic material at desired locations is commonly used.
A general mask manufacturing method includes a method of preparing a metal thin film to be used as a mask, and coating a photoresist (PR) on the metal thin film and then performing pattering, or coating a PR to have patterns and then performing etching to manufacture a patterned mask.
Another general mask manufacturing method includes a method of electroforming a thin film on a metal electrode, and patterning the plated thin film to manufacture a mask.
According to the above-described general FMM mask manufacturing methods, since a PR needs to be coated and etched on a substrate in every process, process time and costs are increased and productivity is reduced.
In an ultra-high-resolution OLED manufacturing process, small defects of several μm may lead to pixel deposition failure and thus defects such as impurities, intervening products, and voids on the surface of an FMM mask need to be minimized. However, when electroforming is performed using a general metal electrode, defects occur on the surface of an electrodeposited film due to micro-scale defects or imperfect or non-uniform crystal structures on the surface of the metal electrode. Therefore, use of a defect-less electrode may be regarded as a first step for manufacturing an FMM mask having uniform thickness and surface state.
The present invention provides a mother plate capable of manufacturing a mask having a uniform thickness and an excellent surface state, a method of manufacturing the mother plate, and a method of manufacturing a mask.
The present invention provides a mother plate capable of reducing process time and costs and increasing productivity by repeatedly reusing the mother plate, a method of manufacturing the mother plate, and a method of manufacturing a mask.
According to an aspect of the present invention, there is provided a method of manufacturing a mother plate used to electroform a mask for organic light-emitting diode (OLED) pixel deposition, the method including (a) providing a substrate made of conductive monocrystalline silicon, and (b) forming an insulator having patterns, on at least one surface of the substrate.
According to an aspect of the present invention, there is provided a method of manufacturing a mother plate used to electroform a mask for organic light-emitting diode (OLED) pixel deposition, the mother plate including a substrate made of conductive monocrystalline silicon and having engraved patterns formed in at least one surface thereof, and an insulator buried in the engraved patterns.
The substrate may be doped at a concentration equal to or higher than 1019 cm−3.
The insulator may include one of a photoresist, a silicon oxide, and a silicon nitride.
A density of defects having a diameter equal to or greater than 2 μm on the surface of the substrate may be 0 pcs/cm2 to 1,156 pcs/cm2.
A uniform electric field may be generated and thus a plated film may be formed on a whole exposed part of the surface of the monocrystalline silicon other than a part of the surface where the insulator is formed, formation of the plated film may be prevented on the insulator to pattern the plated film, and the patterned plated film may serve as a fine metal mask (FMM).
According to an aspect of the present invention, there is provided a mother plate used to electroform a mask for organic light-emitting diode (OLED) pixel deposition, the mother plate including a substrate made of conductive monocrystalline silicon, and an insulator formed on at least one surface of the substrate to have patterns.
According to an aspect of the present invention, there is provided a mother plate used to electroform a mask for organic light-emitting diode (OLED) pixel deposition, the mother plate including a substrate made of conductive monocrystalline silicon, and an insulator formed in engraved patterns formed in at least one surface of the substrate.
A density of defects having a diameter equal to or greater than 2 μm on the surface of the substrate may be 0 pcs/cm2 to 1,156 pcs/cm2.
The substrate may be doped at a concentration equal to or higher than 1019 cm−3.
The insulator may include one of a photoresist, a silicon oxide, and a silicon nitride.
According to an aspect of the present invention, there is provided a method of electroforming a mask for organic light-emitting diode (OLED) pixel deposition, the method including (a) providing a substrate made of conductive monocrystalline silicon, (b) manufacturing a cathode body by forming an insulator having patterns, on at least one surface of the substrate, (c) positioning the cathode body and an anode body spaced apart from the cathode body, and dipping at least a part of the cathode body in a plating solution, and (d) applying an electric field between the cathode body and the anode body.
According to an aspect of the present invention, there is provided a method of electroforming a mask for organic light-emitting diode (OLED) pixel deposition, the method including (a) providing a substrate made of conductive monocrystalline silicon, (b) forming engraved patterns in at least one surface of the substrate, (c) manufacturing a cathode body by forming an insulator in the engraved patterns, (d) positioning the cathode body and an anode body spaced apart from the cathode body, and dipping at least a part of the cathode body in a plating solution, and (e) applying an electric field between the cathode body and the anode body.
A plated film may be formed on the surface of the cathode body to configure a mask body, and formation of the plated film may be prevented on a surface of the insulator to configure mask patterns.
According to an aspect of the present invention, there is provided a method of depositing organic light-emitting diode (OLED) pixels by using a mask electroformed for OLED pixel deposition, the method including (a) positioning a mask electroformed using the above-described method of electroforming the mask, to correspond to a target substrate, (b) supplying an organic material source to the target substrate through the mask, and (c) depositing the organic material source on the target substrate through patterns of the mask.
As described above, according to the present invention, a mask having a uniform thickness and an excellent surface state may be manufactured.
In addition, according to the present invention, process time and costs may be reduced and productivity may be increased by repeatedly reusing a cathode body mold.
10: Electroforming apparatus
11: Plating bath
12: Plating solution
15: Plated film
20: Mother plate, Cathode body
21: Conductive substrate
25, 26: Insulator
28: Cathode patterns
30: Anode body
40: Power supply
100: Mask, Shadow mask, Fine Metal Mask (FMM)
200: OLED pixel deposition apparatus
DP: Display patterns
PP: Pixel patterns, Mask patterns
The following detailed descriptions of the invention will be made with reference to the accompanying drawings illustrating specific embodiments of the invention by way of example. These embodiments will be described in detail such that the invention can be carried out by one of ordinary skill in the art. It should be understood that various embodiments of the invention are different, but are not necessarily mutually exclusive. For example, a specific shape, structure, and characteristic of an embodiment described herein may be implemented in another embodiment without departing from the scope of the invention. In addition, it should be understood that a position or placement of each component in each disclosed embodiment may be changed without departing from the scope of the invention. Accordingly, there is no intent to limit the invention to the following detailed descriptions. The scope of the invention is defined by the appended claims and encompasses all equivalents that fall within the scope of the appended claims. In the drawings, like reference numerals denote like functions, and the dimensions such as lengths, areas, and thicknesses of elements may be exaggerated for clarity.
Hereinafter, to allow one of ordinary skill in the art to easily carry out the invention, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Referring to
A target substrate 900, on which the organic material source 600 is to be deposited, e.g., a glass substrate, may be provided between the magnet plate 300 and the deposition source supply 500. The FMM mask 100 for enabling deposition of the organic material source 600 per pixel may be positioned in contact with or very close to the target substrate 900. The magnet 310 may generate a magnetic field such that the FMM mask 100 is in contact with or very close to the target substrate 900.
The deposition source supply 500 may supply the organic material source 600 while horizontally reciprocating, and the organic material source 600 supplied from the deposition source supply 500 may pass through patterns of the FMM mask 100 and be deposited on a surface of the target substrate 900. The organic material source 600 deposited through the patterns of the FMM mask 100 may serve as pixels 700 of an OLED.
To prevent non-uniform deposition of each pixel 700 due to a shadow effect, the pattern of the FMM mask 100 may have a sloped shape S [or a tapered shape S]. The organic material source 600 passing through the patterns in diagonal directions along sloped surfaces may also contribute to deposition of the pixels 700 and thus the pixels 700 may be deposited to a uniform thickness.
Referring to
The plating bath 11 contains a plating solution 12. The plating solution 12 is an electrolyte and may serve as a material of the plated film 15 to be used as a mask. According to an embodiment, when an Invar thin film made of an iron (Fe)-nickel (Ni) alloy is manufactured as the plated film 15, a mixture of a solution including Ni ions and a solution including Fe ions may be used as the plating solution 12. According to another embodiment, when a Super Invar thin film made of a Fe—Ni—cobalt (Co) alloy is manufactured as the plated film 15, a mixture of a solution including Ni ions, a solution including Fe ions, and a solution including Co ions may be used as the plating solution 12. The Invar thin film or the Super Invar thin film may be used as an FMM mask or a shadow mask in an OLED manufacturing process. Since the Invar thin film has a very low thermal expansion coefficient of about 1.0×10−6/° C. or the Super Invar thin film also has a very low thermal expansion coefficient of about 1.0×10−7/° C., mask patterns may not be easily deformed by heat energy and thus the Invar thin film or the Super Invar thin film may be commonly used in a high-resolution OLED manufacturing process. The plating solution 12 for a desired plated film 15 is not particularly limited and the following description will be focused on manufacturing of the Invar thin film 15.
The plating solution 12 may be supplied from an external plating solution supply means (not shown) into the plating bath 11, and the plating bath 11 may further include therein, for example, a circulation pump (not shown) for circulating the plating solution 12, and a filter (not shown) for removing impurities of the plating solution 12.
A side of the cathode body 20 may have, for example, a flat panel shape, and the entirety of the cathode body 20 may be dipped in the plating solution 12. Although the cathode body 20 and the anode body 30 are vertically positioned in
The cathode body 20 may include a conductive material as a substrate 21 [see
A metal substrate may have metal oxides on the surface thereof and include impurities in a metal substrate manufacturing process, a polycrystalline silicon substrate may have an intervening product or a grain boundary, and a conductive polymer substrate may have a high probability of containing impurities and have low strength and acid resistance. In the following description, elements which hinder uniform generation of an electric field on the surface of the cathode body 20, e.g., the metal oxides, the impurities, the intervening product, and the grain boundary, are called “defects”. Due to the defects, an electric field may not be uniformly applied to the above-described cathode material and thus a part of the plated film 15 may be non-uniformly formed.
In implementing ultra-high-resolution pixels of an ultra-high-definition (UHD) or higher level, non-uniformity of the plated film 15 and plated film patterns may exert bad influence on deposition of pixels. An FMM mask or a shadow mask may have a pattern width of several to several ten μm, and more specifically, less than 30 μm and thus even defects of several μm may be significantly regarded considering the pattern width of the mask.
A process for removing, for example, metal oxides and impurities may be additionally performed to remove defects from the above-described cathode material, and other defects, e.g., etching of the cathode material, may be caused in this process.
Therefore, the present invention is characterized in that the conductive substrate 21 of the cathode body 20 uses a substrate made of monocrystalline silicon. To have conductivity, the substrate 21 may be highly doped at a concentration equal to or higher than 1019 cm−3. The doping may be performed on the entirety of the substrate 21 or on only the surface of the substrate 21.
The doped monocrystalline silicon has no defects and thus a uniform plated film 15 may be formed due to generation of a uniform electric field on a whole surface in an electroforming process. The FMM mask 100 manufactured using the uniform plated film 15 may increase the resolution of OLED pixels. Furthermore, since a process for removing or preventing defects is not additionally required, process costs may be reduced and productivity may be increased.
In addition, since the substrate 21 made of silicon is used, when necessary, an insulator 25 or 26 [or an insulating layer] may be formed by merely oxidizing or nitrifying the surface of the substrate 21. The insulator 25 may prevent electrodeposition of the plated film 15 to pattern the plated film 15.
The plated film 15 may be electrodeposited on the surface of the cathode body 20, and be patterned to correspond to the insulator 25 or 26 of the cathode body 20. The cathode body 20 of the present invention may form and pattern the plated film 15 at the same time, and thus may also be called a “mother plate” 20 or a “mold”. Alternatively, the insulator 25 or 26 may not be formed and the plated film 15 may be electrodeposited on the cathode body 20 and then a process of patterning the plated film 15 may be performed additionally.
The anode body 30 may face and be spaced apart from the cathode body 20 by a predetermined distance, a side of the anode body 30 corresponding to the cathode body 20 may have, for example, a flat panel shape, and the entirety of the anode body 30 may be dipped in the plating solution 12. The anode body 30 may be made of an insoluble material such as titanium (Ti), iridium (Ir), or ruthenium (Ru). The cathode body 20 and the anode body 30 may be spaced apart from each other by about several cm.
The power supply 40 may supply a current required for electroplating, to the cathode body 20 and the anode body 30. A negative (−) terminal of the power supply 40 may be connected to the cathode body 20, and a positive (+) terminal thereof may be connected to the anode body 30.
Referring to
A plurality of display patterns DP may be formed in a body of the mask 100: 100a or 100b. Each display pattern DP is a pattern corresponding to a single display of, for example, a smartphone. When the display pattern DP is magnified, a plurality of pixel patterns PP corresponding to red (R), green (G), and blue (B) pixels are shown. Sides of each pixel pattern PP may have a sloped shape or a tapered shape [see
That is, in this specification, the display pattern DP does not indicate a single pattern and should be understood as a group of a plurality of pixel patterns PP corresponding to a single display.
The mask 100 of the present invention is characterized in that the mask 100 is manufactured with a plurality of display patterns DP and pixel patterns PP without additionally performing a patterning process. The mask 100 of the present invention is also characterized in that the mask 100 is manufactured with tapered patterns [e.g., pixel patterns PP] without additionally performing a tapering process. In other words, the plated film 15 on the surface of the mother plate 20 [or the cathode body 20] of an electroforming apparatus may be electrodeposited by forming the display patterns DP and the tapered pixel patterns PP. In the following description, the display patterns DP and the pixel patterns PP may be used interchangeably with patterns. Furthermore, although the following description is focused on deposition of the pixel patterns PP in a magnified part of the mother plate 20, since a group of the pixel patterns PP configure the display pattern DP, it should be understood that the pixel patterns PP and the display patterns DP are simultaneously formed in the following embodiments.
According to a first embodiment, referring to (a) of
Then, referring to (b) of
Subsequently, referring to (c) of
Since the plated film 15 is electrodeposited and gets thicker from the surface of the substrate 21, the plated film 15 may not be formed over a top surface of the insulator 25. That is, the thickness of the plated film 15 may be less than the thickness of the insulator 25. Since the plated film 15 is electrodeposited by filling pattern spaces of the insulator 25, the plated film 15 may be formed with an inversely tapered shape to that of the patterns of the insulator 25.
Then, referring to (d) of
According to a second embodiment, referring to (a) of
Then, referring to (b) of
Subsequently, referring to (c) of
Then, referring to (d) of
Subsequently, referring to (e) of
According to a third embodiment, referring to (a) of
Then, referring to (b) of
Subsequently, referring to (c) of
Thereafter, referring to (d) of
As described above, the mother plate 20 [or the cathode body 20] including the conductive monocrystalline silicon substrate 21 according to embodiments of the present invention may have no or very few defects on the surface thereof. In particular, defects having a diameter equal to or greater than 2 μm, which may influence mask patterns having a width of several to several ten μm, may not be present. Since the mother plate 20 including the conductive monocrystalline silicon substrate 21 may have a much lower density of defects compared to that of a mother plate [or a cathode body] including a metal or polycrystalline silicon substrate, an electric field may be uniformly applied to the surface of the mother plate 20 and thus the plated film 15 electrodeposited on the mother plate 20 may also have a low density of defects on the surface thereof. Therefore, the plated film 15 may have a uniform thickness and an excellent surface state and stably perform pixel deposition by using accurate mask patterns.
A SUS mother plate will now be compared to a monocrystalline silicon mother plate based on a test.
The monocrystalline silicon mother plate 20 was prepared, and the SUS mother plate was prepared as a comparative example for the monocrystalline silicon mother plate 20. A mixture of a solution including Ni ions and a solution including Fe ions was used as a plating solution 12, and electroforming was performed at a current density of 60 mA/cm2 for 10 minutes. The plated film 15 [or the mask 100] was formed to a thickness of 10 μm.
Defects such as impurities, intervening products, and metal oxides having a diameter equal to or greater than 2 μm were counted. Considering that a width of mask patterns PP may be reduced to 10 μm, 2 μm corresponds to 20% of the mask pattern width and thus defects having a diameter equal to or greater than 2 μm are regarded as a major factor which causes pixel deposition failure. The number of defects within a predetermined area (e.g., 600 μm×500 μm, 0.003 cm2) were counted at a magnification of ×200, and then were multiplied by converting the predetermined area into a unit area of 1 cm2.
(a) of
A density of defects (the number of defects/cm2) is 38,362 pcs/cm2 in (a) of
In particular, a density of defects of 12,396 pcs/cm2 is observed on the electroformed Invar mask [see (c) of
(a) of
A density of defects (the number of defects/cm2) is 0 pcs/cm2 in all of (a), (b), and (c) of
In particular, the density of defects of 0 pcs/cm2 is also observed on the electroformed Invar mask [see (c) of
The density of defects of the monocrystalline silicon mother plate 20 is 0 pcs/cm2 in
As a process for removing surface oxides of the monocrystalline silicon mother plate 20, etching was performed for 15 minutes by using a hydrogen fluoride (HF) (49%) solution. Thereafter, Secco etching was performed for 2 minutes by using a Secco etchant of HF:DI water:K2Cr2O7=1.5L:0.75L:33 g. Secco etching is an etching process for checking defects of silicon. Since parts having defects are etched at a high etching rate, defects of the monocrystalline silicon mother plate 20 may be amplified as much as possible.
(a), (b), and (c) of
Therefore, the density of defects (i.e., 1,156 pcs/cm2) on the monocrystalline silicon mother plate 20 of
Considering
As described above, due to a very low density of surface defects, the monocrystalline silicon mother plate 20 of the present invention may generate a uniform electric field in an electroforming process and manufacture the plated film 15 [or the mask 100] having a uniform thickness and an excellent surface state. In addition, the plated film 15 [or the mask 100] may have accurate mask patterns having no μm-scale errors and thus ultra-high-resolution OLED pixels may be deposited.
While the present invention has been particularly shown and described with reference to embodiments thereof, it will be understood by one of ordinary skill in the art that various changes in form and details may be made therein without departing from the scope of the present invention as defined by the following claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2016-0145918 | Nov 2016 | KR | national |
| 10-2016-0162464 | Dec 2016 | KR | national |
| 10-2017-0054471 | Apr 2017 | KR | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/KR2017/011362 | 10/16/2017 | WO | 00 |
