1. Field of the Invention
The present invention relates to electronics and, more specifically, to amplifiers used in such devices as radio receivers.
2. Description of the Related Art
To accommodate a relatively large, dynamic range in radio receivers, low-noise amplifiers (LNA) are often designed with two gain settings: a high-gain setting and a low-gain setting.
To further understand the operation of LNA 100, representation 200 of the input circuitry for each of left branch 102 and right branch 104 is shown in
where CGS is the effective capacitance across the gate to source terminals of each transistor M1 and ω0 is the desired operating frequency of LNA 100. At resonance, the gate-to-source voltage VGS across each transistor M1 is given by equation (2) as follows:
VGS=QINVS (2)
where source voltage VS is a source voltage. Additionally, the output voltage VOUT (e.g., V1,OUT and V2,OUT) of each branch 102 and 104 may be expressed by equation (3) as follows:
VOUT=gmRLVGS (3)
where RL is the effective load resistance of each load tank 106 at frequency ω0 and gm is the transconductance of each transistor M1. Thus, the overall voltage gain AV of the LNA 100 may be expressed by equation (4) as follows:
Typically, the voltage gain of LNA 100 is switched between high gain and low gain by changing the effective load resistance RL of the right and left load tanks 106. In
Changing the effective load resistance RL of the right and left load tanks 106 is accomplished in
In this implementation, the tail current ITAIL flowing through each input transistor M1 is held constant between the high-gain setting and the low-gain setting, such that the transconductance gm is unchanged. Consequently, power consumption between the high-gain setting and low-gain setting also does not change.
In one embodiment, the present invention is an integrated circuit comprising an amplifier circuit adapted to receive an input signal at least one input node and present an amplified output signal at least one output node. The amplifier circuit comprises at least one branch and current-source circuitry adapted to provide a tail current to the at least one branch. Each branch comprises at least one load tank, at least one input transistor, and variable-impedance circuitry. The at least one input transistor has a gate and is coupled to the at least one load tank, wherein the transconductance of the at least one input transistor is adapted to be altered to achieve two or more different gain settings for the amplifier circuit. The variable impedance circuitry is coupled between the input node and the gate of the input transistor, wherein the variable-impedance circuitry is adapted to be controlled to contribute any one of at least two different levels of impedance to the overall input impedance of the amplifier circuit.
Other aspects, features, and advantages of the present invention will become more fully apparent from the following detailed description, the appended claims, and the accompanying drawings in which like reference numerals identify similar or identical elements.
A second method of reducing gain may be envisioned in which the transconductance gm of each transistor M1 in
A disadvantage of reducing the transconductance gm in the low-gain setting is impedance mismatching. In circuitry design, matching impedances is often desired to eliminate signal reflections between upstream and downstream circuitry. As a result, standards have been established for matching impedances for various applications. For example, in radio frequency (RF) applications, circuitry is typically designed to the S11 design specification, which requires input and output impedances of about 50Ω.
The input impedance ZIN of left branch 102 and right branch 104 of LNA 100 may each be represented by equation (5) as follows:
The gate inductance LG, and source inductance LS shown in
To meet the S11 standard, the real part of equation (5) must be equal to about 50Ω and the imaginary part of equation (5) must be equal to about 0. These two conditions are represented below as equations (6) and (7):
As shown by equation (6), as the transconductance gm decreases, ZIN decreases below the 50Ω standard for fixed values of LS and CGS.
According to certain embodiments of the present invention, impedance matching is maintained while decreasing the transconductance gm to reduce power consumption in the low-gain setting.
In this embodiment, the transconductance gm of each input transistor M1 is altered by changing tail current ITAIL. ITAIL is selectively generated by one or two current sources: I1 which is always on and I2 which may be selectively disconnected by switch S3. In the low-gain setting, switch S3 is open to disconnect current source I2 and thus tail current ITAIL is generated by only current source I1. The resulting transconductance gm of each input transistor M1 is also reduced.
As shown in equation (5), as the transconductance gm is reduced, the input impedance ZIN is also reduced. To maintain constant input impedance ZIN, switches S2 and resistors R2 are added to the inputs of right branch 302 and left branch 304. To compensate for the reduced input impedance ZIN in the low-gain setting, both switches S2 are opened so that the differential input signal flows through both resistors R2. As a result, equation (6) may be modified to represent the input impedance when switches S2 are open as shown in equation (8) below:
Note that R2 is selected during design of the circuit to maintain the 50Ω S11 standard. Also, note that equation (7) is not affected by the reduction of transconductance gm.
In the high-gain setting, switch S3 is closed, tail current ITAIL is generated by I1 and I2, and transconductance gm is restored. With switches S2 closed to short-circuit resistors R2, the input impedance ZIN is restored to equation (6).
Alternative embodiments of the present invention may be realized which reduce the transconductance gm of one or more input transistors M1 in the low-gain setting and utilize the input impedance matching mechanism described above. These embodiments include but are not limited to the following implementations and any combination thereof.
In several possible implementations, the transconductance gm may be reduced using alternative methods. For example, the transconductance gm may be reduced by replacing each input transistor M1 with a set of two or more parallel transistors. One or more of the parallel transistors would be switched so that they could be removed from the circuit, thereby decreasing transconductance gm. The transconductance gm could also be decreased by disconnecting multiple current sources in a circuit with more than two current sources. Additionally, the transconductance gm can be reduced by using programmable current sources that have selectable current levels. Other methods of reducing the transconductance gm can be envisioned by those skilled in the art.
In other possible implementations, the input impedance may be adjusted by using one or more transistors as resistive devices.
In another possible implementation, the low-gain setting may be achieved by reducing the transconductance gm using one of the methods described above and by reducing the load impedance ZLOAD using the method described in the “Background of the Invention.” For example, resistors R1 and switches S1 may be added in parallel to right and left load tanks 306 as illustrated in
In yet other possible implementations, LNA 300 of
In still other possible implementations, the implementations described above could be combined to achieve three or more gain levels. For example, two or more resistive devices may be added to the input and three or more current sources, at least two of which are switched, may used to achieve three or more gain settings.
Additionally, the present invention may be altered with alternative circuit configurations and elements by those skilled in the art without deviating from the spirit of this invention. For example,
Furthermore, alternative embodiments of the present invention may be realized in which the input impedance is controlled to achieve different desired impedance levels rather than simply maintaining a constant input impedance.
Although the present invention has been described as being implemented using NMOS transistor technology, the present invention can also be implemented using PMOS transistors or other transistor technologies, such as bipolar or other integrated circuit (IC) technologies such as GaAs, InP, GaN, and SiGe IC technologies.
It will be further understood that various changes in the details, materials, and arrangements of the parts which have been described and illustrated in order to explain the nature of this invention may be made by those skilled in the art without departing from the scope of the invention as expressed in the following claims. For example, the switches identified in
LNA 300 of
Further devices such as RF transmitters and RF transceivers may use either LNA 300 or any of the alternative embodiments. Moreover, the present invention may be used in receivers, transmitters, and transceivers in applications other than RF. These applications include but are not limited to radio frequency applications, millimeter wave applications, microwave applications, fiber optic applications, and coaxial cable applications. Additional applications commonly known in the art may also be envisioned within the scope of this invention.
The present invention may be implemented as circuit-based processes, including possible implementation as a single integrated circuit (such as an ASIC), a multi-chip module, a single card, or a multi-card circuit pack. As would be apparent to one skilled in the art, various functions of circuit elements may also be implemented as processing blocks in a software program. Such software may be employed in, for example, a digital signal processor, micro-controller, or general-purpose computer.
Unless explicitly stated otherwise, each numerical value and range should be interpreted as being approximate as if the word “about” or “approximately” preceded the value of the value or range.
The use of figure numbers and/or figure reference labels in the claims is intended to identify one or more possible embodiments of the claimed subject matter in order to facilitate the interpretation of the claims. Such use is not to be construed as necessarily limiting the scope of those claims to the embodiments shown in the corresponding figures.
It should be understood that the steps of the exemplary methods set forth herein are not necessarily required to be performed in the order described, and the order of the steps of such methods should be understood to be merely exemplary. Likewise, additional steps may be included in such methods, and certain steps may be omitted or combined, in methods consistent with various embodiments of the present invention.
Although the elements in the following method claims, if any, are recited in a particular sequence with corresponding labeling, unless the claim recitations otherwise imply a particular sequence for implementing some or all of those elements, those elements are not necessarily intended to be limited to being implemented in that particular sequence.
Reference herein to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the invention. The appearances of the phrase “in one embodiment” in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments necessarily mutually exclusive of other embodiments. The same applies to the term “implementation.”
Number | Name | Date | Kind |
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5343162 | Davis | Aug 1994 | A |
6308055 | Welland et al. | Oct 2001 | B1 |
6995611 | Rokhsaz | Feb 2006 | B1 |
7076226 | Bult et al. | Jul 2006 | B2 |
7202740 | Leete | Apr 2007 | B2 |
Number | Date | Country | |
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20080074187 A1 | Mar 2008 | US |