The above and other features and advantages of the present invention will become more apparent to those of ordinary skill in the art by describing in detail preferred embodiments thereof with reference to the attached drawings in which:
Hereinafter, exemplary embodiments according to the present invention will be described in detail with reference to accompanying drawings. The following embodiments will be provided to those skilled in the art to fully understand the present invention.
As shown in
In the above-mentioned CPW, the lowermost metal layer is used as a shield layer using metal multi-layers, and the uppermost metal layer is designed as a CPW. The shield layer and the ground line of the uppermost layer are simply connected by the intermediate metal layers and the via holes, and, in general, the intermediate metal layers have the same width as the ground line of the uppermost layer and are constant in width.
In the CPW transmission line (TL), a structure and a distance between a signal line and ground lines have a sensitive effect on a transmission property. An example of a conventional CPW considering this is illustrated in
Referring to
In the CPW, it is not easy to interconnect between the uppermost ground lines 111 and the lowermost metal layer 113 because of the nature of its structure so it can be floated electrically. Thus, there is a demerit that the lowermost metal layer 113 acting as a ground line having a pattern is not clear in its role.
In consideration of problems of the conventional technique mentioned above, the present invention suggests various structures of an intermediate metal layer so as to electrically connect a lowermost shield layer with an uppermost ground line and to maximize a distance between a signal line and a ground line and an area where an electromagnetic wave spreads, and thus loss of electric waves is reduced and fidelity is improved.
To this end, the present invention provides a CPW having various shapes connected to a shield layer as well as having an intermediate metal layer whose width is different from that of a ground line of an uppermost layer. In addition, the present invention provides a CPW in which both the intermediate metal layer and the lowermost shield layer have slots or the lowermost shield layer has a slot as well.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like numbers refer to like elements throughout the drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Detailed descriptions about a silicon substrate and an interlayer insulator will be omitted in each embodiment.
Referring to
As such, a ground cross-section of a conventional multi-layer interconnection CPW is formed in a square shape, whereas the ground cross-section of the present invention has a trapezoid shape, so that the CPW has a larger area of electromagnetic wave propagation than the conventional square cross-section, thereby reducing transmission loss and improving fidelity.
Referring to
The CPW of the present embodiment has a ground cross-section of an inverse trapezoid shape, which is similar to the CPW of the first embodiment described above. Thus, it has a larger area of electromagnetic wave propagation than a conventional CPW having a square-shaped cross-section. Accordingly, it exhibits reduced transmission loss and improved fidelity.
Referring to
The CPW of the present embodiment has a ground cross-section of a square-shaped, which has a larger area of electromagnetic wave propagation than a conventional CPW having a squared-shaped cross-section. Thus, transmission loss is reduced and fidelity is improved.
Referring to
The CPW of the present embodiment has a function similar to a CPW having a slow-wave effect by forming a slot line on a shield layer, which will be described below. Thus, according to the CPW of the embodiment, transmission loss is reduced and fidelity is improved.
Referring to
To be specific, in the CPW of the embodiment, an uppermost metal layer of an 8-level metal layer is designed to have a ground line 51—a signal line 50—a ground line 51, a lowermost metal layer 54 is designed as a shield layer to reduce an effect of a silicon substrate 55, and the shield layer 54 is connected to the ground line 51 of the uppermost layer using intermediate metal layers 53 and via holes 58. The intermediate metal layers 53 gradually decrease in width from the ground line 51 of the uppermost layer to the lowermost shield layer 54, and are connected to the shield layer 54. Slot patterns 59 for a slow wave effect are formed in the shield layer 54.
Referring to
Compared to the CPW described with reference to
Referring to
To be specific, in the design of the CPW of the embodiment, an uppermost metal layer of an 8-level metal layer is designed to have a ground line 81—a signal line 80—a ground line 81, a lowermost metal layer 84 is designed as a shield layer to reduce an effect of a silicon substrate 85, and the shield layer 84 is connected to the ground line 81 of the uppermost layer using intermediate metal layers 83 and via holes 88. Particularly, the CPW of this embodiment is designed such that the intermediate metal layers 83 connected to the ground line 81 of the uppermost layer and the shield layer 84 have first slot patterns 89 and the shield layer 84 have second slot patterns 90.
In the above-mentioned embodiment of the present invention, the intermediate metal layers have a smaller width than that of the ground line of the uppermost layer, and the widths of the intermediate metal layers are designed to gradually increase or decrease, or to be uneven. However, the present invention is not limited to these structures. The intermediate metal layers can decrease and then increase in width, and thus it can be implemented such that a ground cross-section of the CPW has an oval shape.
For convenience, the above embodiment has been described focusing on a structure in which the intermediate metal layer is narrower than the ground line of the uppermost layer. However, it is not limited to such a structure. When the intermediate metal layers gradually increase or decrease in width, the widest intermediate metal layer can have the same width as the ground line of the uppermost layer.
As can be seen from the foregoing, when a CPW is designed using multi-layer interconnection CMOS technology, in a method of connecting ground lines of uppermost and lowermost layers, an intermediate metal layer can be designed to gradually increase or decrease in width, or to be uneven so as to maximize an area of electromagnetic wave propagation, thereby minimizing CPW loss and maximizing a slow wave effect. As a result, the performance of an ultra-high frequency circuit can be improved and the circuit may be scaled down. In addition, when the CPW suggested by the present invention is applied to the design of the ultra-high frequency circuit, it is possible to implement a low-priced CMOS integrated circuit operating at an ultra-high frequency due to performance improvement of the ultra-high frequency circuit and circuit miniaturization caused by the slow wave effect.
While the present invention has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.
Number | Date | Country | Kind |
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2006-33587 | Apr 2006 | KR | national |