Embodiments described herein relate to transfer tools for surface mount technology.
State of the art surface mount technology (SMT) utilizes a vacuum or electrostatic bonding tool to directly pick electrical components (such as silicon and gallium nitride) from wafers or die and place them on target substrates (such as glass, silicon, printed circuit board, flexible printed circuit board) to create electrical circuits often referred to as surface mount devices (SMD).
Electrical joints can be created on the bottom surface of a component during placement by connecting bond pads with an electrically conductive adhesive bonding material using bonding techniques such as eutectic bonding, soldering, anisotropic conductive paste bonding, etc. Such adhesive bonding techniques can rely on temperature, pressure and the reflow properties of the adhesive bonding material to form a reliable mechanical connection to the substrate.
Electrical connections can also be formed on the top surface of component after placement by subsequent processes. One example of such processing is the deposition of a planarization material followed by patterned metal interconnects. Devices that rely on metal connections formed on a component top surface may also utilize an adhesive bonding material to fix the component to the substrate. The adhesive bonding material may or may not be electrically conductive depending upon connections to be made. Non-conductive adhesive bonding materials include glue, tape, polymer, other adhesive layers, etc. Such thin adhesive layers can be slot die coated, spin coated, dispensed or sprayed onto the substrate.
Embodiments describe multi-port polishing fixture assemblies, pick and place bond heads, split holders and methods of conditioning pick and pace bond heads with the multi-port polishing fixture assemblies. In an embodiment, a multi-port polishing fixture assembly includes a fixture base with a perimeter surface, a plurality of kinematic clamps fastenable along the perimeter surface, and a plurality of split holders fastenable to the perimeter surface with the plurality of kinematic plurality of kinematic clamps. Such a multi-port polishing fixture may be utilized to condition a pick and place bond head by loading the multi-port polishing fixture assembly with a plurality of pick and place bond heads secured within a corresponding plurality of split holders, and polishing the plurality of pick and place bond heads and corresponding plurality of split holders. In such a configuration, the split holders may act as a sacrificial material flattening the polishing pad of the polishing apparatus before it contacts the pick and place bond head in order to mitigate edge-fast polishing. In a particular embodiment, a pick and place bond head includes an elongate body, a pedestal at a distal end of the elongate body, and a plurality of mesa structures extending from the pedestal. Each mesa structure may include a distal bond surface with one or more vacuum holes.
Embodiments describe multi-port polishing fixture assemblies, pick and place bond heads, split holders, and methods of conditioning pick and pace bond heads with the multi-port polishing fixture assemblies for use in surface mount technology (SMT).
It has been observed that conventional bonding tools used to pick and place components have typically greater than 5 μm surface roughness due to machining processes of vacuum holes (laser, drilling) and surface finishing (electric discharge machining, drilling). Flatness of the pick and place tool is also not controlled and can lead to significant topography of the placed component making it difficult or impossible to form top metal connections after placement. Furthermore, such a surface roughness can also damage (e.g. scratch) top contact pads (e.g. metal) when present on components being transferred, leading to possible failure to form electrical connection after placement.
Furthermore, it has been observed that rougher surfaces can directly translate to adhesive wetting bubbles underneath the transferred component. Adhesive wetting is especially sensitive for ultra-thin (e.g. less than 10 μm) chips. Bubbles or non-uniform wetting eventually can affect component total thickness variation (TTV) during final adhesive curing process beyond 2 μm TTV since roughness of the bonding tools can translate to TTV of the transferred components. This variation can affect planarization and contact making process and demands larger margin and effectively larger chip or component area ultimately impacting cost of the materials. Further, this can impact via size and integrity of electrical connection to top contacts of a transferred component.
In one aspect, embodiments describe a pick and place bond head polishing process that can reduce surface roughness and other machining related manufacturing process non-uniformities. The embodiments can also enable re-using contaminated or damaged pick and place bond heads during the manufacturing process, which can reduce cost for SMD.
In an embodiment a multi-port polishing fixture assembly includes a fixture base with a perimeter surface, a plurality of a plurality of kinematic clamps fastenable along the perimeter surface, and a plurality of split holders fastenable to the perimeter surface with the plurality of kinematic plurality of kinematic clamps. In operation, a plurality of pick and place bond heads can be secured within a corresponding plurality of split holders and then polished with a polishing apparatus including the multi-port polishing fixture assembly positioned over a polishing pad. In accordance with embodiments the split holders, used to clamp the pick and place bond heads, act as a sacrificial material, and provide pressure uniformity to the pick and place bond heads and avoid edge-fast polishing that is prevalent in traditional film or chemical mechanical polishing (CMP) based approaches. In accordance with embodiments, the polishing processes and equipment can be utilized to achieve distal bond surfaces of the pick and place bond heads characterized by an average surface roughness (Ra) of 50 nm-0.5 μm and a flatness of less than 300 nm. This can facilitate the transfer of components with lower resulting TTV on the receiving substrate, and enable reliable top side and/or bottom side electrical connections to be made with the components. Where a pick and place bond head includes multiple mesa structures with multiple distal bond surfaces 202, the flatness (e.g. of less than 300 nm) may be extended across a total surface area including each distal bond surface 202 for every mesa structure 250.
In various embodiments, description is made with reference to figures. However, certain embodiments may be practiced without one or more of these specific details, or in combination with other known methods and configurations. In the following description, numerous specific details are set forth, such as specific configurations, dimensions and processes, etc., in order to provide a thorough understanding of the embodiments. In other instances, well-known semiconductor processes and manufacturing techniques have not been described in particular detail in order to not unnecessarily obscure the embodiments. Reference throughout this specification to “one embodiment” means that a particular feature, structure, configuration, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrase “in one embodiment” in various places throughout this specification are not necessarily referring to the same embodiment. Furthermore, the particular features, structures, configurations, or characteristics may be combined in any suitable manner in one or more embodiments.
The terms “over”, “to”, “between”, and “on” as used herein may refer to a relative position of one layer with respect to other layers. One layer “over” or “on” another layer or bonded “to” or in “contact” with another layer may be directly in contact with the other layer or may have one or more intervening layers. One layer “between” layers may be directly in contact with the layers or may have one or more intervening layers.
Referring now to
A connector 124 may be fastened along a length of the pivot arm 120. A multi-port polishing fixture assembly 150 may additionally be connected to a distal end portion of the pivot arm 120. In this manner the pivot arm 120 can be adjusted to provide pressure to the multi-port polishing fixture assembly 150 as it is contacted with a polishing pad 112 on the rotatable platen 110.
In an embodiment, a multi-port polishing fixture assembly 150 includes a fixture base 130 with a perimeter surface 131, a plurality of a plurality of kinematic clamps 140 fastenable along the perimeter surface 131, and a plurality of split holders 160 fastenable to the perimeter surface 131 with the plurality of kinematic plurality of kinematic clamps 140. In use, pick and place bond heads 200 are clamped inside the corresponding split holders 160, and fastened to the perimeter surface 131 using the plurality of kinematic clamps 140. Thus, the kinematic clamps 140 can be used to secure the bond heads 200 inside the corresponding split holders 160, as well as to secure the bond heads and split holders 160 to the fixture base 130.
The multi-port polishing fixture assemblies 150 in accordance with embodiments may be utilized to polish a variety of tools, in particular, pick and place bond heads used for high-throughput pick and place of components from a high density source substrate to a lower density target substrate. Exemplary fields of application can include fan-out wafer level packaging, fan-out panel level packaging, etc. Embodiments described herein may be used to condition tools used for the transfer of any ultra-thin components where bond head surface planarity can affect TTV of the transferred component.
In an embodiment, the perimeter surface 131 includes a plurality of kinematic fixturing patterns 138, which will receive a corresponding plurality of split holders 160. In the illustrated embodiment, the kinematic fixturing patterns 138 are V-grooves, though other configurations may be used, such as semi-circle, rectangle, slot, etc. In an embodiment, the fixture base 130 additionally includes a plurality of threaded holes 136 along the perimeter surface 131 in order to receive a screw 144 of a corresponding kinematic clamp 140. Referring now to the close-up illustration in
Also illustrated in
It is to be appreciated that the particular embodiment illustrated in
Up until this point embodiments have been described in which the split holder 160 is a physically separate component from the kinematic clamp 140 and fixture base 130. Thus, a tubular split holder 160 may be a discrete component. The split holders 160 in accordance with embodiments can also be designed as being a part of the kinematic clamp 140, fixture base 130, or both.
Referring now to
Up until this point the pick and place bond head 200 has been described as including a single distal bond surface 202, however, embodiments envision bond heads 200 with multiple distal bond surfaces 202, which can be used to pick up a same component together, or each distal bond surface 202 to pick up a separate component. Referring now to
In the illustrated embodiment, the pick and place bond head 200 includes an elongate body 230, a pedestal 220 at a distal end of the elongate body 230, and a plurality of mesa structures 250 extending from the pedestal. The pedestal 220 may be an integral distal portion of the elongate body, or alternatively a discrete shape or part of the pick and place bond head 200. Each mesa structure 250 may include a distal bond surface 202 including one or more vacuum holes 210. In an embodiment, each distal bond surface 202 has a maximum lateral dimension of less than 500 μm. In an embodiment, each vacuum hole 210 has a maximum width of less than 75 μm.
The vacuum holes in accordance with embodiments are then connected to one or more vacuum channels within the pick and place bond head 200 for connection to a vacuum source of the mass transfer tool to which the pick and place bond heads 200 will be attached.
The pick and place bond heads 200 in accordance with embodiments may be conditioned with the polishing apparatus 100 before first use, or after use during a sustained period of operation with a mass transfer tool. For example, conditioning prior to initial use may remove defects or surface roughness characteristic of manufacturing process non-uniformities. Conditioning after sustained use can address damaged or contaminated distal bond surfaces. In both applications, the conditioned distal bond surfaces 202 can be characterized by an average surface roughness (Ra) of 50 nm-0.5 μm in an embodiment. In an embodiment, a conditioned distal bond surface 202 is characterized by a flatness of less than 300 nm. In an embodiment, a total surface area including each distal bond surface 202 for every mesa structure 250 is characterized by a flatness of less than 300 nm. Thus, the flatness may be translated across each mesa structure 250 in the pick and place tool. Such parameters may facilitate the ability to transfer flat components with proper adhesive wetting. Additionally, refurbishing of contaminated or damaged pick and place bond heads 200 in a manufacturing process can reduce cost for surface mount devices (SMD).
In an embodiment, an exemplary conditioning process includes loading a multi-port polishing fixture assembly 150 with a plurality of tools (e.g. pick and place bond heads 200) secured within a corresponding plurality of split holders 160, and polishing the plurality of tools and corresponding plurality of split holders, for example, to average surface roughness (Ra) of 50 nm-0.5 μm and flatness of less than 300 nm.
Loading the multi-port polishing fixture assembly 150 may include fastening the plurality of split holders 160 to a perimeter surface 131 of a fixture base 130 with a plurality of kinematic clamps 140. In some embodiments, the split holders 160 (and pick and place bond heads 200) may be loosely fastened initially in order to set a polishing height, and only tightly fastened in place after setting the polishing height. Setting the polishing height may include, prior to polishing, loading one or more dummy rods 400 into the multi-port polishing fixture similarly as the split holders 160, and clamped tight. Dummy rods 400 may, for example, have similar dimensions as the split holders 160, as shown in
In accordance with embodiments, the pick and place bond heads 200 are loaded such that the split holders 160 and distal bond surfaces 202 are planar to each other. The split holders 160 act as a sacrificial material flattening the polishing pad 112 before it contacts the pick and place bond head 200. In accordance with embodiments, an exemplary polishing pad 112 may be an alumina (Al2O3) lapping film. For example, this may be a 0.3-5.0 micron alumina lapping film with no adhesive. The polishing fluid may be deionized (DI) water. In such an embodiment, an abrasive slurry is not utilized.
In order to illustrate effectiveness of the polishing apparatus 100 and conditioning sequence in accordance with embodiments, an as received pick and place bond head 200 was inspected and surface contour were measured with a profilometer, followed by conditioning and again inspecting and measuring the surface contour after conditioning. In this particular example, conditioning was performed with a 5.0 micron alumina polishing pad, 20 rotations per minute (RPM) platen speed, 0.5 pounds of force applied to the multi-port polishing fixture assembly 150, with DI water, for 60 second polishing time.
Images of the pick and place bond head distal surfaces 202 are provided in
Improved planarity across the distal bond surfaces 202 in accordance with embodiments may facilitate the ability to provide a more uniform pressure to a component during pick and place, and in particular, placement onto a receiving substrate. In an embodiment, placement of a component onto a receiving substrate include heat and/or pressure, and potentially reflow or deformation of an adhesive bonding material. Application of non-uniform pressure due to surface roughness or insufficient flatness of the distal bond surfaces 202 can result in non-uniform wetting or bubbles underneath the transferred components and unacceptable TTV of the placed components. This can affect the ability to make either or both top side or bottom side connections to the placed components.
The plurality of components can then be positioned over a receiving substrate 920. As shown in
As shown in
In utilizing the various aspects of the embodiments, it would become apparent to one skilled in the art that combinations or variations of the above embodiments are possible for conditioning a bond head surface. Although the embodiments have been described in language specific to structural features and/or methodological acts, it is to be understood that the appended claims are not necessarily limited to the specific features or acts described. The specific features and acts disclosed are instead to be understood as embodiments of the claims useful for illustration.
This application claims the benefit of priority of U.S. Provisional Application No. 62/959,364 filed Jan. 10, 2020, which is incorporated herein by reference.
Number | Date | Country | |
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62959364 | Jan 2020 | US |