Patent Grant
6994775
The present invention relates to a process and targets for the controlled deposition of multilayer films, e.g., multilayer high temperature superconducting (HTS) films, films having functionally graded compositions, e.g., HTS films having functionally graded compositions, and films doped with minor amounts of a second material, e.g., HTS films doped with minor amounts of a second material.
One conventional process for the deposition of superconducting thick films, such as YBCO, and other industrial films such as semi-conductor films, ferroelectric films, insulating or optical coating films, and the like, is pulsed laser deposition (PLD). In such a process, a target, typically a disk-like shaped target, of the material or materials to be deposited is contacted with a laser beam of the desired energy and frequency. Commonly, such a disk-like target is rotated during the process to avoid contacting only a single spot of the target. In some PLD processes, a laser beam is simply rastered across sections of a target so that it is the laser beam that is moved rather than the target.
Since initial development, coated conductor research on HTS superconductors has focused on fabricating increasing lengths of the material, while increasing the overall critical current carrying capacity. Different research groups have developed several techniques of fabricating coated conductors. Regardless of which techniques are used for the coated conductors, the goal of obtaining highly textured superconducting thick films, such as YBa2Cu3O7-x (YBCO), with high supercurrent carrying capability on metal substrates remains. The use of thick superconducting films for coated conductors appears logical because both the total critical current and the engineering critical current density (defined as the ratio of total critical current and the cross-sectional area of the tape) are directly correlated with the thickness of the superconducting films.
Multilayer HTS films have recently been shown to yield high current superconducting composites because high quality, thick HTS coatings can be grown with multilayers.
U.S. Pat. Nos. 5,356,522 and 5,580,667 by Lai et al. describe the use of sectored targets in the preparation of thin film magnetic disks. Their sectored targets are designed for deposition via sputtering as the target moves consecutively linearly through successive regions of the sputtering system. They do not describe sectored disks, do not describe rotation of sectored targets during deposition, and do not describe deposition of high temperature superconducting materials.
In accordance with the purposes of the present invention, as embodied and broadly described herein, the present invention provides a process of depositing multilayer thin films by rotating a single target having at least two segments with differing compositions under a processing beam to generate processed material from the single target for deposition of the processed material upon a substrate, the processing beam contacting the segments with differing compositions in a controlled defined manner, and contacting the processed material from the single target with the substrate under conditions sufficient to deposit the processed material upon the substrate, where processed material from the segments with differing compositions is deposited in a predetermined defined manner as a multilayer thin film. The segment compositions can be single component or multicomponent materials.
In another embodiment, the present invention provides a process of depositing multilayer thin films by contacting a single target having at least two segments with differing compositions under a processing beam in a controlled defined manner thereby generating processed material from the single target for deposition of the processed material upon a substrate, and contacting the processed material from the single target with the substrate under conditions sufficient to deposit the processed material upon the substrate, where processed material from the segments with differing compositions is deposited in a predetermined defined manner as a multilayer thin film. The segment compositions can be single component or multicomponent materials.
Further, the present invention provides a disk-shaped target for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, such a disk-shaped target including at least two segments with differing compositions. The segments can be single component or multicomponent materials.
Further, the present invention provides a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 50 nanometers. In another embodiment, the alternating layers can include more than two compositionally different layers such that a tri-layer, quad-layer or the like is defined and the thin film structure can include a large multiple of such tri-layers, quad-layers or the like per micron of thin film.
a)–(i) show exemplary configurations for targets in accordance with the present invention.
The present invention is concerned with targets and a process for the preparation of multilayer films, e.g., high temperature superconducting (HTS) films, films having functionally graded compositions, e.g., HTS films having functionally graded compositions, and films doped with minor amounts of a second material, e.g., HTS films doped with minor amounts of a second material. The applications of the present invention are widespread. Not only is it very applicable to the superconductor industry, but also of interest to other film-related industries for films such as semiconductors, ferroelectrics, magnetic coatings, magnetoresistance materials, thermoelectrics, insulators, optical coatings and the like. Multilayer structures with repeating layers have been previously described for magnetic films of, e.g., Pt/Co, PdCo and the like and for such films using intermediate insulating layers of SiO2 and the like, for giant magnetoresistance structures of, e.g., alternating ferromagnetic and non-magnetic layers, for thermoelectric materials such as trilayer structures of repeating layers of PbTe, PbSeTe and Te and the like, and semiconductor structures of, e.g., repeating trilayers of InAs, GaSb and AlSb and the like. Each such previous structure may be prepared using the process and sectored target of the present invention by properly designing the target and process.
The present invention allows the growth of high-density multilayer structures sometimes referred to as superlattice-like structures. The term “superlattice structure” refers to a composite structure made of alternating ultrathin layers of different component materials. A superlattice structure typically has an energy band structure which is different than, but related to, the energy band structures of its component materials. The selection of the component materials of a superlattice structure, and the addition of relative amounts of those component materials, will primarily determine the resulting properties of a superlattice structure as well as whether, and by how much, those properties will differ from those of the individual component materials a superlattice structure.
The process of the present invention can allow preparation of multilayer composites with a wide range of thicknesses with from a single unit (of alternating layers of the different deposited materials, e.g., a bi-layer of a first composition and a second composition) up to many units with total combined thicknesses greater than, e.g., one micron.
The targets and process of the present invention allow the use of only a single pulsed laser deposition (PLD) target in the preparation of multilayer films, e.g., multilayer HTS films. A target is formed prior to use to contain one or more additional sectors, regions, or other shapes that have a different composition of material relative to the primary matrix of the target as shown in
The HTS composites are, in the broadest sense, composed of a substrate, possibly one or more buffer layers, and an HTS film, which is the functional object of the composite. The substrates can be single crystal substrates such as strontium titanate (STO) or yttria-stabilized zirconia (YSZ), textured polycrystalline substrates such as roll-textured nickel (RABiTS), or non-textured polycrystalline substrates that have a textured template film deposited on the surface such as an ion-beam-assist deposited YSZ or MgO film on a nickel alloy, e.g., a nickel-chromium alloy. Often, but not always, buffer layers are employed to facilitate the deposition of a final HTS layer. Examples of buffer materials can include cerium oxide, strontium titanate, strontium ruthenate, yttrium oxide, and lanthanum manganate (LaMnO3). The final layer can be a film or composite film that contains a desired HTS material such as YBCO (Y-123).
The substrates can be other materials for other applications such as semiconductors, ferroelectrics, magnetic coatings, magnetoresistance materials, thermoelectrics, insulators, optical coatings and the like. For example, for ferroelectrics, suitable substrates can include silicon, platinum-coated silicon and other conductive material-coated silicon. For semiconductors, suitable substrates can include stainless steel, molybdenum and silicon. For magnetic coatings, suitable substrates can include silicon. For magnetoresistance materials, suitable substrates can include nonmagnetic materials such as glass, silicon, aluminum oxide (Al2O3), titanium carbide (TiC), silicon carbide (SiC), a sintered product of aluminum oxide and TiO, or ferrite. For thermoelectrics, suitable substrates can include highly insulating silicon or silicon on an insulator (SOI).
The factors of pulsed laser deposition (PLD) that are important in the practice of the present invention to form desired structures include the target rotation speed, pulse rate, pulse energy, and distance from the target center to the point on the target where the laser beam is incident. Variations in these parameters in conjunction with specially designed targets can affect the periodicity and compositional makeup of the resulting film. These variations can be made between runs or changed during film deposition in either a stepwise or continuous manner.
Similarly, the factors of pulsed electron beam deposition (PEBD) that are important in the practice of the present invention to form desired structures include the target rotation speed, pulse rate, pulse energy, and distance from the target center to the point on the target where the electron beam is incident. Variations in these parameters in conjunction with specially designed targets can affect the periodicity and compositional makeup of the resulting film. These variations can be made between runs or changed during film deposition in either a stepwise or continuous manner.
The design of an individual target can allow an additional manner of film deposition control. Examples of these targets are shown in
Other target designs are shown in
Structures such as shown in
The differing segment compositions for superconducting applications can employ various combinations of rare-earth-barium-copper oxides (RE-BCO) for the different layers of a resultant multilayer superconductive structure. The rare earth metals can generally be any suitable rare earth metal from the periodic table, but are preferably chosen from among yttrium, neodymium, samarium, europium, gadolinium, erbium, dysprosium and ytterbium. In a multilayer example, combinations for a first and third layers (with an interlayer of insulating, conducting or superconducting material) may include, for example, both layers of one mixed rare earth oxide combination, or one mixed rare earth oxide combination in the first layer and a different mixed rare earth oxide combination in the third layer. For multilayer composites with more than three layers, the possible mixture combinations would multiply but can readily be worked out by one skilled in the art. Yttrium is a preferred rare earth to include in forming the mixed rare earth oxide combinations.
In other applications such as semiconductors, ferroelectrics, magnetic coatings, ferromagnetic or magnetoresistance materials, thermoelectrics, insulators and the like, the differing materials for the segmented compositions are selected for the particular application. For example, for ferroelectrics, suitable segmented compositions can be of, e.g., strontium titanate, barium titanate, lead zirconium titanate (PZT) and barium titanate. For semiconductors, suitable segmented compositions can be of, e.g., gallium arsenide (GaAs), indium arsenide (InAs), gallium antimonide (GaSb), indium phosphide (InP), lead telluride (PbTe), gallium nitride (GaN), gallium phosphide (GaP), aluminum antimonide (AlSb) and the like. For magnetic coatings, suitable segmented compositions can be of platinum and cobalt, palladium and cobalt, terbium and iron and the like. For magnetoresistance materials, suitable segmented compositions can be of lanthanum strontium manganate (La0 7Sr0 3MnO3), neodymium strontium manganate (Nd0 7Sr0 3MnO3), lanthanum calcium manganate (La0 7Ca0 3MnO3), lanthanum manganate (LaMnO3), and the like. For thermoelectrics, suitable segmented compositions can be, e.g., of lead-telluride (PbTe), lead-selenide-telluride (PbSeTe) and tellurium (Te).
The targets used in the examples were manufactured by traditional bulk sintering techniques. In one embodiment, bulk superconducting powders were manufactured separately by mechanical milling in isopropanol, drying, and then calcinating at 900° C. for 25 hours.
Targets were formed by forming a pie-shaped piece of metal to fit inside a disk-shaped die (2-inch diameter of a circular shape). A first material powder was loaded into the pie-shaped piece of metal while a second material powder was loaded around the remainder of the die. The first material powder can comprise as little or as much of the overall target volume as desired. The metal form can then be removed and the target pressed at 15 kilograms per square inch (kpsi) for a few seconds. The resultant segmented target can then be removed from the die and sintered in an oven to fully form the individual superconducting materials (for the superconducting embodiment) and to bond the first and second materials into a solid target. The target was ramped at 4° C. per minute to 900° C. and held for 25 hours in an oxygen atmosphere. It was then ramped down to 400° C. and held for 25 hours, ramped back up to 925° C. and held for 25 hours, then ramped down to 400° C. and held for an additional 75 hours. After the latter step, the sample was allowed to furnace cool (i.e., cool down by simply turning off the furnace) to room temperature. Such heating stages are not necessary for every type material that can be used as a material of a segment composition.
A film was deposited upon a STO substrate using the above target. The film thickness was about 5000 Angstroms and the Tc was 92 K. The measured Jc of the film was 4×106 amperes per square centimeter (A/cm2) at 75.5 K. The structure of the film consisted of a high-density arrangement of multilayers. The periodicity of the bi-layer structure was less than 20 nm. The number of individual layers, Y-123 and Eu-123, per micron exceeded 140. The field dependence of the superconducting properties of the film is shown at 30 in
Other methods of making, e.g., the multilayer structures are to use individual targets that are then interchanged to make the different layers. However, this is somewhat labor intensive and not practical for making the ultrafine multilayers as described by the present invention. Another method of making multilayers is described in a prior LANL patent where a mixed rare-earth superconducting film is deposited and subsequently post-annealed to produce a layered structure due to solubility instability and film segregation into different phases and multiple layers. However, this approach is limited to certain materials that exhibit a thermodynamic instability and segregate into the two different phases with changes in annealing conditions. In contrast, the present invention is limited only to the extent that the materials put into the target do not significantly react with one another during the final sintering step during preparation of a robust target.
The present invention is seen as having applications in terms of adding a discrete second phase in the superconducting film. Having the second phase as a discrete section of a target results in the PLD system putting selected material at a regular interval onto the substrate that has the stoichiometry only of the second phase. Uniformly mixing this second phase into the target would not accomplish this result.
The process and targets of the present invention are also of interest to other film deposition techniques where a target is employed such as in sputtering. When sputtering, different materials typically have different sputtering rates. With a sectored target of the present invention, only one source or target would be needed which simplifies design and reduces costs for any deposition system. The sector or other shape within the target would be changed to account for different sputtering rates for different materials and to tailor the composition to the desired values. In this manner, only one sputtering target and gun would be needed.
The present invention is more particularly described in the following examples which are intended as illustrative only, since numerous modifications and variations will be apparent to those skilled in the art.
Bulk superconducting powders of Y1.015Ba2Cu3Oy (Y-123) and Eu1 015Ba2Cu3Oy (Eu-123) were manufactured separately by mechanical milling in isopropanol, drying, and then calcinating at 900° C. for 25 hours. A pie-shaped piece of metal was then formed to fit inside a 2-inch diameter die. The Eu-123 powder was loaded into the pie-shaped piece of metal while the Y-123 powder was loaded around the remainder of the 2-inch die. In this example, the Eu-123 powder comprised approximately ⅙ of the overall target volume. The metal was removed and the target pressed at 15,000 pounds per square inch (psi) for a few seconds. The target was removed from the die and then sintered in an oven to fully form the individual superconducting materials and to bond the materials into a solid target. The target was ramped at 4° C. per minute to 900° C. and held for 25 hours in an oxygen atmosphere. It was then ramped down to 400° C. and held for 25 hours, ramped back up to 925° C. and held for 25 hours, then ramped down to 400° C. and held for an additional 75 hours. After the latter step, the sample was allowed to furnace cool (i.e., cool down by simply turning off the furnace) to room temperature.
A film was deposited upon a STO substrate using the target from Example 1. The film thickness was about 5000 Angstroms and the Tc was 92 K. The measured Jc of the film was 4×106 amperes per square centimeter (A/cm2). The structure of the film consisted of a high-density arrangement of multilayers. The periodicity of the bi-layer structure was less than 20 nm. The number of individual layers, Y-123 and Eu-123, per micron exceeded 140. The number of bi-layer pairs (70) translates into a periodicity of less than 20 nm for every pair of alternating layers. Hence, controlled ultra-fine microstructural features in an HTS composite structure can be obtained. The field dependence of the superconducting properties of the film is shown in
Powders of Y-123 and Sm1.015Ba2Cu3Oy (Sm-123) were used to make two targets in a similar manner to the Y/Eu target of Example 1. In the first of these targets, the Sm-123 powder comprised about ⅙ of the target with the balance made up of the Y-123 powder. In the second of these targets, the Y-123 powder comprised about ⅙ of the target with the balance made up of the Sm-123 powder. Films were made on IBAD-YSZ coated Hastelloy metal substrates. An intervening layer of CeO2 was deposited prior to using the sectored target. In the case where the Sm-123 made up ⅙ of the target, a film with a Tc of 92.4 K and an average Jc value from microbridge measurements of 0.775×106 A/cm2 was obtained. In the other film made where the Y-123 made up ⅙ of the target, a film with a Tc of 92.4 K and an average Jc value from microbridge measurements of 1.2×106 A/cm2 was obtained.
A sectored target similar to that shown in
Bulk superconducting powders of Dy1.015Ba2Cu3Oy (Dy-123) and Eu1 015Ba2Cu3Oy (Eu-123) were manufactured separately by mechanical milling in isopropanol, drying, and then calcinating at 900° C. for 25 hours. A pie-shaped piece of metal was then formed to fit inside a 2-inch diameter die. The Eu-123 powder was loaded into the pie-shaped piece of metal while the Dy-123 powder was loaded around the remainder of the 2-inch die. In this example, the Eu-123 powder comprised approximately ⅓ of the overall target volume. The metal was removed and the target pressed at 15 kilograms per square inch (kpsi) for a few seconds. The target was removed from the die and then sintered in an oven to fully form the individual superconducting materials and to bond the materials into a solid target. The target was ramped at 4° C. per minute to 900° C. and held for 25 hours in an oxygen atmosphere. It was then ramped down to 400° C. and held for 25 hours, ramped back up to 925° C. and held for 25 hours, then ramped down to 400° C. and held for an additional 75 hours. After the latter step, the sample was allowed to furnace cool (i.e., cool down by simply turning off the furnace) to room temperature.
A film was deposited upon on an IBAD-YSZ coated Hastelloy metal substrate using the target from Example 5. The film thickness was about 5000 Angstroms and the Tc was 92.9 K and a transition temperature width of 0.5 K.
Although the present invention has been described with reference to specific details, it is not intended that such details should be regarded as limitations upon the scope of the invention, except as and to the extent that they are included in the accompanying claims.
This invention was made with government support under Contract No. W-7405-ENG-36 awarded by the U.S. Department of Energy. The government has certain rights in the invention.
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| 3985635 | Adam et al. | Oct 1976 | A |
| 4866032 | Fujimori et al. | Sep 1989 | A |
| 4915810 | Kestigian et al. | Apr 1990 | A |
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| Number | Date | Country | |
|---|---|---|---|
| 20040110042 A1 | Jun 2004 | US |
