In the following description, like reference characters designate like or corresponding parts throughout the several views shown in the figures. It is also understood that terms such as “top,” “bottom,” “outward,” “inward,” and the like are words of convenience and are not to be construed as limiting terms. Whenever a particular aspect of the invention is said to comprise or consist of at least one of elements of a group and combinations thereof, it is understood that the aspect may comprise or consist of any of the elements of the group, either individually or in combination with any of the other elements of that group.
Referring to the drawings in general, it will be understood that the illustrations are for the purpose of describing a particular embodiment of the invention and are not intended to limit the invention thereto.
As a comparison,
A ceramic nanocomposite of an embodiment of the invention is shown in
In one embodiment, the at least three phases 110, 120, 130 include, but are not limited to, at least one of a carbide, a nitride, a boride, and combinations thereof. Each of the three phases may individually comprise a carbide, a nitride, a boride or any combination thereof. In another embodiment, the three phases 110, 120, and 130, include, but are not limited to, at least one of silicon carbide, silicon nitride, boron nitride, boron carbide, zirconium carbide, zirconium nitride, hafnium carbide, hafnium boride, hafnium nitride, titanium carbide, titanium boride, titanium nitride, and combinations thereof. Each of the three phases may individually comprise any one of the above-referenced materials or in any combination therof.
In one non-limiting example, the at least three phases include silicon carbide (SiC), silicon nitride (Si3N4), and boron nitride (BN).
Each of the at least three phases has an average grain size less than about 100 nm.
The multiphase ceramic nanocomposite 100 is also substantially free of glassy grain boundary phases 102.
Another aspect of the invention is to provide a multiphase ceramic nanocomposite 100 comprising at least three phases. Each of the at least three phases has an average grain size less than 100 nm. The multiphase ceramic nanocomposite 100 is thermally stable up to a temperature of at least about 1500° C. Thermally stable means significant changes in microstructure, grain or phase size, and composition do not occur with extensive exposure to elevated temperature.
In one embodiment, the multiphase ceramic nanocomposite 100 is thermally stable at a temperature in a range from about 1500° C. to about 2000° C.
Each of the at least three phases of the multiphase ceramic nanocomposite 100 maintained an average grain size below 100 nm according to the temperature and time as described, but not limited to, the conditions listed in Table 1.
An example of the thermal stability of the multiphase ceramic nanocomposite 100 after long-term exposure is shown in
The thermal stability of the multiphase ceramic nanocomposite 100 is an indication of low material diffusivity in the multiphase ceramic nanocomposite. The low diffusivity, in turn, indicates that the multiphase ceramic nanocomposites 100 have the potential for high creep resistance, which i indicates high temperature related properties.
The invention also includes a method of making the multiphase ceramic nanocomposite 100 described hereinabove. The method comprises the steps of: providing at least one amorphous ceramic powder that is substantially free of oxides; and crystallizing and densifying the at least one amorphous ceramic powder to form the multiphase ceramic nanocomposite.
First, the at least one amorphous ceramic powder that is substantially free of oxides is provided. In one embodiment, the amorphous power includes, but is not limited to, Si, B, C and N. In one embodiment, the step of providing the amorphous ceramic powder involves: providing at least one polymeric precursor; curing the at least one polymeric precursor; and pyrolyzing the cured at least one polymeric precursor to form the at least one amorphous ceramic powder. The candidate polymeric precursors include, but are not limited to, polysilanes, polysilazanes, polycarbosilanes, polyborosilazanes, polyborazylenes, and combinations thereof. The polymeric precursor may comprise polysilane, polysilazane, polycarbosilane, polyborosilazane, polyborazylenes, either individually or in any combinations with each other. Optionally, the polymeric precursor may be reacted with at least one organometallic dopant. The organometallic dopant provides material for the phases. In one embodiment, the organo-metallic dopant includes, but is not limited to, at least one of an organo-boron, an organo-zirconium, an organo-titanium, an organo-hafnium, an organo-yttrium, a organo-magnesium, an organo-aluminum and combinations thereof. In another embodiment, the at least one organometallic dopant includes, but is not limited to, at least one of hydrides, alkyl derivatives, alkoxyl derivatives, aralkyl derivatives, alkylynyl derivatives, aryl derivatives, cyclopentadienyl derivatives, arene derivatives, olefin complexes, acetylene complexes, isocyanide complexes, and combinations thereof.
For example, the at least one polymeric precursor can be a commercially available polysilazane or polycarbosilane. Optionally, the polymeric precursor may be reacted with the organometallic dopant, such as a boron-containing agent. The boron-containing agent can be a borane, a borazine, or a polyborazine. The boron-containing agent within the resultant doped polymeric precursor can be 0-40% by weight of the polymeric precursor.
The polymeric precursor is then cured. Curing can be performed with the assistance of a radical-generating initiator, such as, but not limited to, an organic peroxide. The organic peroxide may be 0-5% of the weight of the ceramic precursor.
After providing and curing the at least one polymeric precursor, the at least one polymeric precursor may then be pyrolyzed to form the at least one amorphous ceramic powder. Optionally, the polymeric precursor may be pyrolyzed in a reactive atmosphere or in an inert atmosphere. For example, the polymeric precursor may be pyrolyzed in an atmosphere comprising argon, nitrogen, or ammonia at a temperature ranging from about 900° C. to about 1200° C. to form the amorphous ceramic powder.
An advantage of one embodiment of the invention is that boron introduction also leads to the increase of polymer-to-ceramic conversion rate, from around 70-75% towards around 90% by weight.
Optionally, the at least one amorphous ceramic powder that is formed may be heat-treated. In one embodiment, the at least one amorphous ceramic powder may be heat treated at a temperature above the final pyrolysis temperature, but below the onset temperature for crystallization, such as in a range from about 1200° C. to about 1500° C.
The pyrolyzed polymeric precursor can retain amorphous structure up to the temperatures at which the nucleation process for subsequent crystallization is complete.
After providing the at least one amorphous ceramic powder, the second step in the method of making the multiphase ceramic composite includes crystallizing and densifying the amorphous ceramic power to form the multiphase ceramic composite. In one embodiment, the step of crystallizing and densifying the at least one amorphous ceramic powder comprises sintering, such as, but not limited to, spark plasma sintering, hot isostatic pressing, and combinations therof.
As an example, sintering of the amormphous ceramic powder was done by spark plasma sintering (SPS). The powder was loaded into a graphite die and pre-pressed at about 20 MPa pressure before installed in a SPS System. The SPS system sends a pulsing electric field directly through the die and punch assembly, which enables fast heating of the specimen. Moreover, the pulsing electric field also serves to generate an activation effect, which is an acceleration of surface diffusion. The activation effect accelerates the densification process, which in turn leads to more effective sintering than conventional hot pressing. In one embodiment, the sintering is free of oxide-sintering aids.
Control parameters for spark plasma sintering of the amorphous ceramic powder are shown in Table 2.
The above-mentioned sintering process was conducted either in vacuum or in nitrogen atmosphere.
The amorphous Si—B—C—N network of the powder undergoes in-situ crystallization during sintering. The resultant material comprises Si3N4/SiC/BN as major phases as revealed by XRD, as shown in
Densifying includes techniques such as, but not limited to, a combination of SPS and hot-isostatic pressing (HIP), or the use of hot-isostatic pressing alone. In the former case, a spark plasma sintered sample is supplied for HIP at higher temperatures, while in the latter case a powder compact is encapsulated and directly submitted for HIP at a temperature between about such as 1850° C. to about 2050° C.
While typical embodiments have been set forth for the purpose of illustration, the foregoing description should not be deemed to be a limitation on the scope of the invention. Accordingly, various modifications, adaptations, and alternatives may occur to one skilled in the art without departing from the spirit and scope of the invention.
Number | Date | Country | |
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Parent | 10968742 | Oct 2004 | US |
Child | 11548294 | US |