This application claims priority to Chinese Patent Application No. 202310012608.5, filed on Jan. 5, 2023, Chinese Patent Application No. 202310012633.3, filed on Jan. 5, 2023, and Chinese Patent Application No. 202310012688.4, filed on Jan. 5, 2023, all of which are incorporated by reference herein for all purposes.
Certain embodiments of the present disclosure are directed to circuits. More particularly, some embodiments of the disclosure provide multiport USB fast chargers with fast-charging controller chips including transistor combinations. Merely by way of example, some embodiments of the disclosure have been applied to placing the transistor combinations onto different chip bases when packaging each fast-charging controller chip. But it would be recognized that the disclosure has a much broader range of applicability.
With the increasing battery capacity of electronic devices and the continuous development of fast charging protocols for Universal Serial Bus (USB), the use of USB fast chargers has become more and more widespread. Usually a USB fast charger includes two or more USB output ports to charge two or more loads (e.g., two or more mobile electronic devices) at the same time. The USB fast chargers often generate a large charging current, which can cause the USB fast chargers to overheat. Therefore, there is a need to reduce the risk of overheating in the USB fast chargers.
The fast-charging controller chip 120 includes a fast-charging-protocol unit and one or more additional components. In some examples, the one or more additional components of the fast-charging controller chip 120 are parts of a DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output ports 170 and 180, and the DC-to-DC converter also includes the inductive coil 122, the capacitors 173 and 183, and the resistors 172 and 182. The DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output ports 170 and 180 is a buck converter (e.g., a step-down converter), a boost converter (e.g., a step-up converter), or a buck-boost converter. For example, the DC-to-DC converter (e.g., a switching regulator unit) receives the voltage 111 and generates voltages 171 and 181 based at least in part on the voltage 111. As an example, the voltage 171 and the voltage 181 are the same. In certain examples, the voltage 171 is received by the resistor 172 that is connected to the transistor 174, and the voltage 181 is received by the resistor 182 that is connected to the transistor 184. For example, when the transistor 174 is turned on, a voltage 175 is outputted to the USB output port 170. As an example, when the transistor 184 is turned on, a voltage 185 is outputted to the USB output port 180. The capacitor 173, the resistor 172 and the transistor 174 are external to the fast-charging controller chip 120, and the capacitor 183, the resistor 182 and the transistor 184 are also external to the fast-charging controller chip 120.
The fast-charging controller chip 130 includes a fast-charging-protocol unit and one or more additional components. In some examples, the one or more additional components of the fast-charging controller chip 130 are parts of a DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output port 190, and the DC-to-DC converter also includes the inductive coil 132, the capacitor 193, and the resistor 192. The DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output port 190 is a buck converter (e.g., a step-down converter), a boost converter (e.g., a step-up converter), or a buck-boost converter. For example, the DC-to-DC converter (e.g., a switching regulator unit) receives the voltage 111 and generates a voltage 191 based at least in part on the voltage 111. In certain examples, the voltage 191 is received by the resistor 192 that is connected to the transistor 194. For example, when the transistor 194 is turned on, a voltage 195 is outputted to the USB output port 190. The capacitor 193, the resistor 192 and the transistor 194 are external to the fast-charging controller chip 130.
As shown in
When the actual value of the voltage 175, the actual value of the voltage 185, and/or the actual value of the voltage 195 is much smaller than the actual value of the actual voltage 111, the large difference between the actual value of the voltage 175 and the actual value of the voltage 111, the large difference between the actual value of the voltage 185 and the actual value of the voltage 111, and/or the large difference between the actual value of the voltage 195 and the actual value of the voltage 111 often causes an increase in the switching loss and thus a rise in temperature of the USB fast charger 100. When the temperature of the USB fast charger 100 reaches a predetermined threshold, the USB fast charger 100 usually enters the over-temperature protection and stops the normal operation. Therefore, to maintain the normal operation, the risk of overheating of the USB fast charger 100 often needs to be reduced.
Hence it is highly desirable to improve the technique for USB fast chargers.
Certain embodiments of the present disclosure are directed to circuits. More particularly, some embodiments of the disclosure provide multiport USB fast chargers with fast-charging controller chips including transistor combinations. Merely by way of example, some embodiments of the disclosure have been applied to placing the transistor combinations onto different chip bases when packaging each fast-charging controller chip. But it would be recognized that the disclosure has a much broader range of applicability.
According to certain embodiments, a chip package of a charging controller chip for a USB charger includes: a high-side main transistor including a first drain, a first gate and a first source, the first drain being configured to receive an input voltage; a low-side main transistor including a second drain, a second gate and a second source, the second source being configured to receive a ground voltage, the second drain being connected to the first source and a first coil terminal of an inductive coil, the inductive coil further including a second coil terminal; one or more port main transistors, each port main transistor of the one or more port main transistors including a third drain, a third gate and a third source, the third drain being biased to a converter voltage and connected to the second coil terminal of the inductive coil, the third source being connected to a USB output port; and a controller coupled to the high-side main transistor, the low-side main transistor, and the one or more port main transistors; wherein each port main transistor of the one or more port main transistors is a part of a port transistor combination that further includes a port sensing transistor, the port sensing transistor including a fourth drain, a fourth gate and a fourth source, the fourth drain being connected to the third drain, the fourth gate being connected to the third gate, the fourth source being connected to the third source.
According to some embodiments, a chip package of a charging controller chip for a USB charger includes: a high-side transistor including a first drain, a first gate and a first source; a low-side transistor including a second drain, a second gate and a second source, the low-side transistor being connected to the high-side transistor; one or more port transistors corresponding to one or more USB output ports respectively, each port transistor of the one or more port transistors including a third drain, a third gate and a third source; a first chip base; and a second chip base electrically insulated from the first chip base; wherein: the one or more port transistors are located on the first chip base; and the high-side transistor and the low-side transistor are located on the second chip base.
Depending upon embodiment, one or more benefits may be achieved. These benefits and various additional objects, features and advantages of the present disclosure can be fully appreciated with reference to the detailed description and accompanying drawings that follow.
Certain embodiments of the present disclosure are directed to circuits. More particularly, some embodiments of the disclosure provide multiport USB fast chargers with fast-charging controller chips including transistor combinations. Merely by way of example, some embodiments of the disclosure have been applied to placing the transistor combinations onto different chip bases when packaging each fast-charging controller chip. But it would be recognized that the disclosure has a much broader range of applicability.
In some embodiments, the transistors 226 and 228, the inductive coil 222, and the capacitor 224 are parts of a DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output ports 270 and 280. In certain examples, the DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output ports 270 and 280 is a buck converter (e.g., a step-down converter), a boost converter (e.g., a step-up converter), or a buck-boost converter. For example, the DC-to-DC converter that corresponds to the USB output ports 270 and 280 receives the voltage 211 and generates a voltage 271 based at least in part on the voltage 211. As an example, the voltage 271 is received by the resistor 272 that is connected to the transistor 274, and the voltage 271 is also received by the resistor 282 that is connected to the transistor 284. As shown in
In certain embodiments, the transistors 236 and 238, the inductive coil 232, and the capacitor 234 are parts of a DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output port 290. In some examples, the DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output port 290 is a buck converter (e.g., a step-down converter), a boost converter (e.g., a step-up converter), or a buck-boost converter. For example, the DC-to-DC converter that corresponds to the USB output port 290 receives the voltage 211 and generates a voltage 291 based at least in part on the voltage 211. As an example, the voltage 291 is received by the resistor 292 that is connected to the transistor 294. As shown in
According to some embodiments, the transistor 226 is a high-side transistor, and the transistor 228 is a low-side transistor for the DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output ports 270 and 280. For example, the transistor 274 is a USB port transistor that corresponds to the USB output port 270, and the transistor 284 is a USB port transistor that corresponds to the USB output port 280. As an example, all of the transistors 226, 228, 274, and 284 are on the fast-charging controller chip 220.
According to certain embodiments, the transistor 236 is a high-side transistor, and the transistor 238 is a low-side transistor for the DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output port 290. For example, the transistor 294 is a USB port transistor that corresponds to the USB output port 290. As an example, all of the transistors 236, 238, and 294 are on the fast-charging controller chip 230.
In some embodiments, the transistor 274 is connected to the resistor 272, the transistor 284 is connected to the resistor 282, and the transistor 294 is connected to the resistor 292. In certain examples, the resistor 272 is used to detect a current that flows through the transistor 274, the resistor 282 is used to detect a current that flows through the transistor 284, and the resistor 292 is used to detect a current that flows through the transistor 294. For example, the resistor 272 includes one resistor terminal (e.g., SNS+) through which a current flows into the resistor 272, and another resistor terminal (e.g., SNS−) through which the current flows out of the resistor 272. As an example, the resistor 282 includes one resistor terminal (e.g., SNS+) through which a current flows into the resistor 282, and another resistor terminal (e.g., SNS−) through which the current flows out of the resistor 282. For example, the resistor 292 includes one resistor terminal (e.g., SNS+) through which a current flows into the resistor 292, and another resistor terminal (e.g., SNS−) through which the current flows out of the resistor 292.
In certain embodiments, when the fast-charging controller chip 220 is encapsulated into a package with multiple pins, the drain of the transistor 226 is connected to one or more pins of the package through one or more electrically conductive connecting lines, and the terminals (e.g., SNS+) of the resistors 272 and 282 are connected to one or more pins of the package through one or more electrically conductive connecting lines. For example, the one or more electrically conductive connecting lines for the transistor 226 generate significant heat when one or more currents flow through these one or more electrically conductive connecting lines, causing overheating of the fast-charging controller chip 220 as part of the USB fast charger 200. As an example, the one or more electrically conductive connecting lines for the resistors 272 and 282 generate significant heat when one or more currents flow through these one or more electrically conductive connecting lines, causing overheating of the fast-charging controller chip 220 as part of the USB fast charger 200.
In some embodiments, when the fast-charging controller chip 230 is encapsulated into a package with multiple pins, the drain of the transistor 236 is connected to one or more pins of the package through one or more electrically conductive connecting lines, and the terminal (e.g., SNS+) of the resistor 292 is connected to one or more pins of the package through one or more electrically conductive connecting lines. For example, the one or more electrically conductive connecting lines for the transistor 236 generate significant heat when one or more currents flow through these one or more electrically conductive connecting lines, causing overheating of the fast-charging controller chip 230 as part of the USB fast charger 200. As an example, the one or more electrically conductive connecting lines for the resistors 292 generate significant heat when one or more currents flow through these one or more electrically conductive connecting lines, causing overheating of the fast-charging controller chip 230 as part of the USB fast charger 200.
As mentioned above and further emphasized here,
As shown in
In certain embodiments, the transistor combinations 336 and 338, the inductive coil 332, and the capacitor 334 are parts of a DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output port 390. In some examples, the DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output port 390 is a buck converter (e.g., a step-down converter), a boost converter (e.g., a step-up converter), or a buck-boost converter. For example, the DC-to-DC converter that corresponds to the USB output port 390 receives the voltage 311 (e.g., an input voltage) and generates a voltage 391 (e.g., a converter voltage) based at least in part on the voltage 311. As an example, one terminal of the capacitor 334 is biased to the voltage 391, and another terminal of the capacitor 334 is biased to the ground voltage 325. For example, the voltage 391 is received by the transistor combination 394. In certain examples, the transistor combination 394 is on the fast-charging controller chip 330.
According to some embodiments, the transistor combination 326 is a high-side transistor combination, and the transistor 328 is a low-side transistor combination for the DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output ports 370 and 380. For example, the transistor combination 374 is a USB port transistor combination that corresponds to the USB output port 370, and the transistor combination 384 is a USB port transistor combination that corresponds to the USB output port 380. As an example, all of the transistor combinations 326, 328, 374, and 384 are on the fast-charging controller chip 320.
According to certain embodiments, the transistor combination 336 is a high-side transistor combination, and the transistor combination 338 is a low-side transistor combination for the DC-to-DC converter (e.g., a switching regulator unit) that corresponds to the USB output port 390. For example, the transistor combination 394 is a USB port transistor combination that corresponds to the USB output port 390. As an example, all of the transistor combinations 336, 338, and 394 are on the fast-charging controller chip 330.
In some embodiments, the transistor combination 326 includes terminals 340, 342 and 344, the transistor combination 328 includes terminals 346, 348 and 350, the transistor combination 374 includes terminals 352, 354 and 356, the transistor combination 384 includes terminals 358, 360 and 362, the transistor combination 336 includes terminals 364, 366 and 368, the transistor combination 338 includes terminals 372, 376 and 378, and the transistor combination 394 includes terminals 382, 386 and 388. In certain embodiments, the inductive coil 322 includes terminals 312 and 314, and the inductive coil 332 includes terminals 316 and 318.
According to certain embodiments, the transistor combinations 326, 328, 374 and 384 are on the fast-charging controller chip 320. For example, the terminal 340 of the transistor combination 326 receives the voltage 311, the terminal 342 of the transistor combination 326 receives a voltage 343, and the terminal 344 of the transistor combination 326 is biased to a voltage 313 and directly connected to the terminal 312 of the inductive coil 322. As an example, the terminal 346 of the transistor combination 328 is biased to the voltage 313 and directly connected to the terminal 312 of the inductive coil 322, the terminal 348 of the transistor combination 328 receives a voltage 349, and the terminal 350 of the transistor combination 328 is biased to the ground voltage 325. For example, the terminal 352 of the transistor combination 374 is directly connected to the terminal 314 of the inductive coil 322, and the terminal 354 of the transistor combination 374 receives a voltage 355. As an example, the terminal 358 of the transistor combination 384 is directly connected to the terminal 314 of the inductive coil 322, and the terminal 360 of the transistor combination 384 receives a voltage 361. In certain examples, when the transistor combination 326 is turned on, the terminal 344 outputs a current 345. In some examples, when the transistor combination 328 is turned on, the terminal 350 outputs a current 351. In certain examples, when the transistor combination 374 is turned on, the terminal 356 outputs a current 357 and a voltage 375 to the USB output port 370. In some examples, when the transistor combination 384 is turned on, the terminal 362 outputs a current 363 and a voltage 385 to the USB output port 380.
According to some embodiments, the transistor combinations 336, 338, and 386 are on the fast-charging controller chip 330. For example, the terminal 364 of the transistor combination 336 receives the voltage 311, the terminal 366 of the transistor combination 336 receives a voltage 367, and the terminal 368 of the transistor combination 336 is biased to a voltage 317 and directly connected to the terminal 316 of the inductive coil 332. As an example, the terminal 372 of the transistor combination 338 is biased to the voltage 317 and directly connected to the terminal 316 of the inductive coil 332, the terminal 376 of the transistor combination 338 receives a voltage 377, and the terminal 378 of the transistor combination 338 is biased to the ground voltage 325. For example, the terminal 382 of the transistor combination 394 is directly connected to the terminal 318 of the inductive coil 332, and the terminal 386 of the transistor combination 394 receives a voltage 387. In certain examples, when the transistor combination 336 is turned on, the terminal 368 outputs a current 369. In some examples, when the transistor combination 338 is turned on, the terminal 378 outputs a current 379. In certain examples, when the transistor combination 394 is turned on, the terminal 388 outputs a current 389 and a voltage 395 to the USB output port 390.
As mentioned above and further emphasized here,
In certain embodiments, the transistor 460 (e.g., a field-effect transistor) includes a drain 462, a gate 464 and a source 466, and the transistor 470 (e.g., a field-effect transistor) includes a drain 472, a gate 474 and a source 476. For example, the transistor 460 is a MOSFET. As an example, the transistor 470 is a MOSFET. In some examples, the drain 462 of the transistor 460 and the drain 472 of the transistor 470 are connected to the terminal 402, and the gate 464 of the transistor 460 and the gate 474 of the transistor 470 are connected to the terminal 404. For example, the drain 462 of the transistor 460 and the drain 472 of the transistor 470 are biased to a voltage 450. In certain examples, the source 466 of the transistor 460 is connected to the terminal 406, and the source 476 of the transistor 470 is connected to the terminal 410.
In some embodiments, both of the gate 464 of the transistor 460 and the gate 474 of the transistor 470 receive a voltage 440 through the terminal 404. For example, the voltage 440 is used to turn on and/or turn off the transistor 460 and is used to turn on and/or turn off the transistor 470. In certain examples, when the transistor 460 is turned on, the source 466 of the transistor 460 outputs a current 420 through the terminal 406. In some examples, when the transistor 470 is turned on, the source 476 of the transistor 470 outputs a current 430 through the terminal 410. For example, if both of the transistors 460 and 470 are tuned on, the transistor combination 400 is turned on. As an example, if both of the transistors 460 and 470 are turned off, the transistor combination 400 is turned off.
According to certain embodiments, the transistor 470 is used to sample the current that flows from the drain 462 of the transistor 460 to the source 466 of the transistor 460 when the transistor 460 is turned on. For example, when the transistor 460 is turned on, the current 420 is equal to the current that flows from the drain 462 to the source 466 of the transistor 460, and when the transistor 470 is turned on, the current 430 is equal to the current that flows from the drain 472 to the source 476 of the transistor 470.
As an example, the current that flows from the drain 472 of the transistor 470 to the source 476 of the transistor 470 is determined as follows:
where I470 represents the current that flows from the drain 472 of the transistor 470 to the source 476 of the transistor 470, and I460 represents the current that flows from the drain 462 of the transistor 460 to the source 466 of the transistor 460. N is a predetermined constant (e.g., 1000). In some examples, N is equal to 1000, so if the current (e.g., 1460) that flows from the drain 462 to the source 466 of the transistor 460 is equal to 3 A, the current (e.g., I470) that flows from the drain 472 to the source 476 of the transistor 470 is equal to 3 mA. In certain examples, by detecting the current (e.g., I470) that flows from the drain 472 to the source 476 of the transistor 470, the current (e.g., I460) that flows from the drain 462 to the source 466 of the transistor 460 is determined as follows:
where I460 represents the current that flows from the drain 462 of the transistor 460 to the source 466 of the transistor 460, and I470 represents the current that flows from the drain 472 of the transistor 470 to the source 476 of the transistor 470. N is a predetermined constant (e.g., 1000). For example, the transistor 470 is used as a sensing transistor, and the transistor 460 is used a main transistor. As an example, a controller (e.g., a controller 630 as shown in
According to certain embodiments, the transistor combination 400 is used as the transistor combination 326, the transistor combination 328, the transistor combination 374, and/or the transistor combination 384 of the fast-charging controller chip 320. In some examples, the transistor combination 326 is the transistor combination 400, wherein the transistor 460 is used as a high-side main transistor, and the transistor 470 is used as a high-side sensing transistor. For example, the terminal 340 of the transistor combination 326 is the terminal 402 of the transistor combination 400, the terminal 342 of the transistor combination 326 is the terminal 404 of the transistor combination 400, and the terminal 344 of the transistor combination 326 is the terminal 406 of the transistor combination 400. As an example, the voltage 343 is the voltage 440, the current 345 is the current 420, and the voltage 311 is the voltage 450. In certain examples, the transistor combination 328 is the transistor combination 400, wherein the transistor 460 is used as a low-side main transistor, and the transistor 470 is used as a low-side sensing transistor. For example, the terminal 346 of the transistor combination 328 is the terminal 402 of the transistor combination 400, the terminal 348 of the transistor combination 328 is the terminal 404 of the transistor combination 400, and the terminal 350 of the transistor combination 328 is the terminal 406 of the transistor combination 400. As an example, the voltage 349 is the voltage 440, the current 351 is the current 420, and the voltage 313 is the voltage 450. In some examples, the transistor combination 374 is the transistor combination 400, wherein the transistor 460 is used as a port main transistor, and the transistor 470 is used as a port sensing transistor. For example, the terminal 352 of the transistor combination 374 is the terminal 402 of the transistor combination 400, the terminal 354 of the transistor combination 374 is the terminal 404 of the transistor combination 400, and the terminal 356 of the transistor combination 374 is the terminal 406 of the transistor combination 400. As an example, the voltage 355 is the voltage 440, the current 356 is the current 420, and the voltage 371 is the voltage 450. In certain examples, the transistor combination 384 is the transistor combination 400, wherein the transistor 460 is used as a port main transistor, and the transistor 470 is used as a port sensing transistor. For example, the terminal 358 of the transistor combination 384 is the terminal 402 of the transistor combination 400, the terminal 360 of the transistor combination 384 is the terminal 404 of the transistor combination 400, and the terminal 362 of the transistor combination 384 is the terminal 406 of the transistor combination 400. As an example, the voltage 361 is the voltage 440, the current 363 is the current 420, and the voltage 371 is the voltage 450.
According to some embodiments, the transistor combination 400 is used as the transistor combination 336, the transistor combination 338, and/or the transistor combination 394 of the fast-charging controller chip 330. In certain examples, the transistor combination 336 is the transistor combination 400, wherein the transistor 460 is used as a high-side main transistor, and the transistor 470 is used as a high-side sensing transistor. For example, the terminal 364 of the transistor combination 336 is the terminal 402 of the transistor combination 400, the terminal 366 of the transistor combination 336 is the terminal 404 of the transistor combination 400, and the terminal 368 of the transistor combination 336 is the terminal 406 of the transistor combination 400. As an example, the voltage 367 is the voltage 440, the current 369 is the current 420, and the voltage 311 is the voltage 450. In some examples, the transistor combination 338 is the transistor combination 400, wherein the transistor 460 is used as a low-side main transistor, and the transistor 470 is used as a low-side sensing transistor. For example, the terminal 372 of the transistor combination 338 is the terminal 402 of the transistor combination 400, the terminal 376 of the transistor combination 338 is the terminal 404 of the transistor combination 400, and the terminal 378 of the transistor combination 338 is the terminal 406 of the transistor combination 400. As an example, the voltage 377 is the voltage 440, the current 379 is the current 420, and the voltage 317 is the voltage 450. In certain examples, the transistor combination 394 is the transistor combination 400, wherein the transistor 460 is used as a port main transistor, and the transistor 470 is used as a port sensing transistor. For example, the terminal 382 of the transistor combination 394 is the terminal 402 of the transistor combination 400, the terminal 386 of the transistor combination 394 is the terminal 404 of the transistor combination 400, and the terminal 388 of the transistor combination 394 is the terminal 406 of the transistor combination 400. As an example, the voltage 387 is the voltage 440, the current 389 is the current 420, and the voltage 391 is the voltage 450.
In some embodiments, the transistor-combination module 610 for a DC-to-DC converter includes one or more transistor combinations 526, wherein each transistor combination 526 includes terminals 540, 542, 544, and 546. In certain examples, the transistor combination 526 is implemented as the transistor combination 400 as shown in
In certain embodiments, the transistor-combination module 620 for one or more USB output ports includes one or more transistor combinations 574, wherein each transistor combination 574 includes terminals 550, 552, 554, and 556. In some examples, the transistor combination 574 is implemented as the transistor combination 400 as shown in
According to some embodiments, the controller 630 is connected to the transistor-combination module 610 for a DC-to-DC converter and the transistor-combination module 620 for one or more USB output ports. In certain examples, the controller 630 is coupled to the main transistor (e.g., the transistor 460) and the sensing transistor (e.g., the transistor 470) of each transistor combination of the transistor combinations (e.g., the transistor combination 326, the transistor combination 328, the transistor combination 336 and/or the transistor combination 338) as parts of the transistor-combination module 610 for a DC-to-DC converter. In some examples, the controller 630 is coupled to the main transistor (e.g., the transistor 460) and the sensing transistor (e.g., the transistor 470) of each transistor combination of the transistor combinations (e.g., the transistor combination 354, the transistor combination 384, and/or the transistor combination 394) as parts of the transistor-combination module 620 for one or more USB output ports. For example, the controller 630 includes an input-voltage and output-voltage detector 632 for the DC-to-DC converter, a gate driver 634 for the one or more transistor combinations 526, a current detector 636 for the one or more transistor combinations 526, a loop control circuit 638 for the DC-to-DC converter, a fast-charging-protocol communication circuit 640, a logic and protection circuit 642, a gate driver 644 for the one or more transistor combinations 574, and a current detector 646 for the one or more transistor combinations 574.
In certain embodiments, the input-voltage and output-voltage detector 632 for the DC-to-DC converter is configured to detect the input voltage and the output voltage of the DC-to-DC converter. For example, the input-voltage and output-voltage detector 632 for the DC-to-DC converter receives a voltage 511 (e.g., the voltage 311) through a terminal 650 (e.g., VIN sense) and converts the received voltage 511 (e.g., the voltage 311) to a voltage 631 (e.g., VIN_fb) with a voltage divider. As an example, the input-voltage and output-voltage detector 632 for the DC-to-DC converter receives a voltage 571 (e.g., the voltage 371 and/or the voltage 391) through a terminal 652 (e.g., VOUT_sense) and converts the received voltage 571 (e.g., the voltage 371 and/or the voltage 391) to a voltage 633 (e.g., VOUT_fb) with a voltage divider. In some examples, the input-voltage and output-voltage detector 632 for the DC-to-DC converter outputs the voltage 631 (e.g., VIN_fb) and the voltage 633 (e.g., VOUT_fb) to the loop control circuit 638 for the DC-to-DC converter.
In some embodiments, the current detector 636 for the one or more transistor combinations 526 receives the current 661 (e.g., Isense) from the terminal 546 through a terminal 660 and converts the received current 661 (e.g., Isense) to a voltage 637 (e.g., V_Ifb) with a current sensing resistor. For example, the voltage 637 (e.g., V_Ifb) is directly proportional to the current 661 (e.g., Isense). As an example, the current detector 636 for the one or more transistor combinations 526 outputs the voltage 637 (e.g., V_Ifb) to the loop control circuit 638 for the DC-to-DC converter.
According to certain embodiments, the fast-charging-protocol communication circuit 640 communicates with a load 690 (e.g., a mobile electronic device) through a terminal 662 (e.g., CC1), a terminal 664 (e.g., CC2), a terminal 666 (e.g., DM), and a terminal 668 (e.g., DP). In some examples, the fast-charging-protocol communication circuit 640 obtains the magnitude of the charging voltage and/or the magnitude of the charging current that are needed by the load 690. For example, the fast-charging-protocol communication circuit 640 converts the magnitude of the charging voltage needed by the load 690 to a reference voltage 663 (e.g., VREF). As an example, the fast-charging-protocol communication circuit 640 converts the magnitude of the charging current needed by the load 690 to a reference voltage 665 (e.g., V_IREF). In certain examples, the fast-charging-protocol communication circuit 640 outputs the reference voltage 663 (e.g., VREF) and the reference voltage 665 (e.g., V_IREF) to the loop control circuit 638 for the DC-to-DC converter.
According to some embodiments, the current detector 646 for the one or more transistor combinations 574 receives the current 671 (e.g., Isense) from the terminal 556 through a terminal 670 and converts the received current 671 (e.g., Isense) to a voltage 647 (e.g., V_Iload) with a current sensing resistor. For example, the voltage 647 (e.g., V_Iload) is directly proportional to the current 671 (e.g., Isense). As an example, the current detector 646 for the one or more transistor combinations 574 outputs the voltage 647 (e.g., V_Iload) to the logic and protection circuit 642.
In certain embodiments, the logic and protection circuit 642 receives the voltage 647 (e.g., V_Iload). For example, the voltage 647 (e.g., V_Iload) is directly proportional to the current 555. As an example, the current 555 is received by the load 690. In some examples, the logic and protection circuit 642 generates a signal 643 (e.g., EN) based at least in part on the voltage 647 (e.g., V_Iload). For example, if the logic and protection circuit 642 determines that the overheating has occurred and the over-temperature protection needs to be activated, the logic and protection circuit 642 generates the signal 643 (e.g., EN) at a logic low level. As an example, the logic and protection circuit 642 outputs the signal 643 (e.g., EN) to the loop control circuit 638 for the DC-to-DC converter. In certain examples, the logic and protection circuit 642 generates a signal 645 (e.g., Switch_control) based at least in part on the voltage 647 (e.g., V_Iload). For example, if the logic and protection circuit 642 determines that the overheating has occurred and the over-temperature protection needs to be activated, the logic and protection circuit 642 generates the signal 645 (e.g., Switch_control) at a logic low level. As an example, the logic and protection circuit 642 outputs the signal 645 (e.g., Switch_control) to the gate driver 644 for the one or more transistor combinations 574.
In some embodiments, the loop control circuit 638 for the DC-to-DC converter receives the voltage 631 (e.g., VIN_fb), the voltage 633 (e.g., VOUT_fb), the voltage 637 (e.g., V_Ifb), the reference voltage 663 (e.g., VREF), the reference voltage 665 (e.g., V_IREF), and the signal 643 (e.g., EN). For example, the loop control circuit 638 for the DC-to-DC converter generates a control signal 639 (e.g., PWM) based at least in part on the voltage 631 (e.g., VIN_fb), the voltage 633 (e.g., VOUT_fb), the voltage 637 (e.g., V_Ifb), the reference voltage 663 (e.g., VREF), the reference voltage 665 (e.g., V_IREF), and the signal 643 (e.g., EN). As an example, the loop control circuit 638 for the DC-to-DC converter outputs the control signal 639 (e.g., PWM) to the gate driver 634 for the one or more transistor combinations 526.
According to certain embodiments, the gate driver 634 receives the control signal 639 (e.g., PWM) and generates the voltage 657 based at least in part on the control signal 639 (e.g., PWM) to turn on and/or turn off the transistor combination 526. In some examples, the transistor combination 526 is implemented as the transistor combination 400 as shown in
According to some embodiments, the loop control circuit 638 for the DC-to-DC converter receives the signal 643 (e.g., EN). For example, if the signal 643 (e.g., EN) is at the logic low level, the loop control circuit 638 for the DC-to-DC converter stops normal operation and the gate driver 634 generates the voltage 657 (e.g., at a logic low level) to turn off the transistor combination 526. As an example, if the signal 643 (e.g., EN) is at the logic high level, the loop control circuit 638 for the DC-to-DC converter operates normally.
In certain embodiments, the gate driver 644 for the one or more transistor combinations 574 receives the signal 645 (e.g., Switch_control) and generates the voltage 675 based at least in part on the signal 645 (e.g., Switch_control) to turn on and/or turn off the transistor combination 574. In some examples, the transistor combination 574 is implemented as the transistor combination 400 as shown in
As mentioned above and further emphasized here,
In certain embodiments, the fast-charging controller chip 500 includes the transistor-combination module 610 for a DC-to-DC converter, the transistor-combination module 620 for one or more USB output ports, and the controller 630. In some examples, the chip base 1010 is one side of a metal sheet, and another side of the metal sheet is the soldering pad 1030. For example, the transistor-combination module 610 for a DC-to-DC converter and the controller 630 are placed on the chip base 1010. As an example, the soldering pad 1030 (e.g., E-PAD 11) is used to connect the packaged chip (e.g., the fast-charging controller chip 500) to another device (e.g., a PCB board). In some examples, the chip base 1020 is one side of a metal sheet, and another side of the metal sheet is the soldering pad 1040. For example, the transistor-combination module 620 for one or more USB output ports is placed on the chip base 1020. As an example, the soldering pad 1040 (e.g., E-PAD 12) is used to connect the packaged chip (e.g., the fast-charging controller chip 500) to another device (e.g., a PCB board). In some embodiments, the metal sheet for the chip base 1010 and the soldering pad 1030 is electrically insulated from the metal sheet for the chip base 1020 and the soldering pad 1040.
As discussed above and further emphasized here,
In some embodiments, the fast-charging controller chip 500 includes the transistor-combination module 610 for a DC-to-DC converter, the transistor-combination module 620 for one or more USB output ports, and the controller 630. In certain examples, the chip base 710 is one side of a metal sheet, and another side of the metal sheet is the soldering pad 730. For example, the transistor-combination module 610 for a DC-to-DC converter is placed on the chip base 710. As an example, the soldering pad 730 (e.g., E-PAD 21) is used to connect the packaged chip (e.g., the fast-charging controller chip 500) to another device (e.g., a PCB board). In some examples, the chip base 720 is one side of a metal sheet, and another side of the metal sheet is the soldering pad 740. For example, the transistor-combination module 620 for one or more USB output ports and the controller 630 are placed on the chip base 720. As an example, the soldering pad 740 (e.g., E-PAD 22) is used to connect the packaged chip (e.g., the fast-charging controller chip 500) to another device (e.g., a PCB board). In some embodiments, the metal sheet for the chip base 710 and the soldering pad 730 is electrically insulated from the metal sheet for the chip base 720 and the soldering pad 740.
According to certain embodiments, the transistor-combination module 610 for a DC-to-DC converter and the controller 630 are placed on the chip base 1010, and the transistor-combination module 620 for one or more USB output ports is placed on the chip base 1020. For example, the transistor-combination module 610 for a DC-to-DC converter includes the transistor combinations 326 and 328. As an example, the transistor-combination module 620 for one or more USB output ports includes the transistor combinations 374 and 384.
In some embodiments, each transistor combination of the transistor-combination module 610 for a DC-to-DC converter includes two laterally double-diffused metal-oxide-semiconductor field-effect transistors. For example, the transistor combination 326 includes two transistors 460 and 470 that are laterally double-diffused metal-oxide-semiconductor field-effect transistors. As an example, the transistor combination 328 includes two transistors 460 and 470 that are laterally double-diffused metal-oxide-semiconductor field-effect transistors. For example, the transistor combination 336 includes two transistors 460 and 470 that are laterally double-diffused metal-oxide-semiconductor field-effect transistors. As an example, the transistor combination 338 includes two transistors 460 and 470 that are laterally double-diffused metal-oxide-semiconductor field-effect transistors.
In certain embodiments, each transistor combination of the transistor-combination module 620 for one or more USB output ports includes two vertically double-diffused metal-oxide-semiconductor field-effect transistors. For example, the transistor combination 374 includes two transistors 460 and 470 that are vertically double-diffused metal-oxide-semiconductor field-effect transistors, whose drains are bonded to the chip base 1020 through an electrically conductive adhesive. As an example, the transistor combination 384 includes two transistors 460 and 470 that are vertically double-diffused metal-oxide-semiconductor field-effect transistors, whose drains are bonded to the chip base 1020 through an electrically conductive adhesive. For example, the transistor combination 394 includes two transistors 460 and 470 that are vertically double-diffused metal-oxide-semiconductor field-effect transistors, whose drains are bonded to the chip base 1020 through an electrically conductive adhesive.
According to some embodiments, the chip base 1010 is biased to a ground voltage (e.g., the ground voltage 325). In certain examples, if the chip base 1010 is biased to the ground voltage (e.g., the ground voltage 325), the controller 630 is bonded to the chip base 1010 through an electrically conductive adhesive. For example, the controller 630 includes a electrically conductive bottom surface, which is bonded to the chip base 1010 through the electrically conductive adhesive. As an example, the electrically conductive bottom surface of the controller 630 is biased to the ground voltage (e.g., the ground voltage 325) by the chip base 1010 through the electrically conductive adhesive.
According to certain embodiments, the chip base 1020 is biased to a voltage PMID (e.g., the voltage 371 and/or the voltage 391). For example, for each transistor combination of the transistor-combination module 620 for one or more USB output ports, the drains of its two transistors (e.g., the transistor 460 and the transistor 470) are bonded to the chip base 1020 through an electrically conductive adhesive, and the chip base 1020 is biased to the same voltage as the drains of its two transistors (e.g., the transistor 460 and the transistor 470). As an example, each pin of the pins 850, 852, 854, 860, 862 and 864 is electrically connected to the chip base 1020, and is biased to the voltage PMID, to which the chip base 1020 is also biased. In some examples, the chip base 1020 is biased to the voltage 371, the terminal 352 of the transistor combination 374 is biased to the voltage 371, the terminal 358 of the transistor combination 384 is biased to the voltage 371, and each pin of the pins 850, 852, 854, 860, 862 and 864 is biased to the voltage 371. For example, each pin of the pins 850, 852, 854, 860, 862 and 864 is biased to the same voltage 371 as the terminal 352 of the transistor combination 374 and the terminal 358 of the transistor combination 384 without using any electrically conductive connecting lines. In certain examples, the chip base 1020 is biased to the voltage 391, the terminal 382 of the transistor combination 394 is biased to the voltage 391, and each pin of the pins 850, 852, 854, 860, 862 and 864 is biased to the voltage 391. As an example, each pin of the pins 850, 852, 854, 860, 862 and 864 is biased to the same voltage 391 as the terminal 382 of the transistor combination 394 without using any electrically conductive connecting lines.
As shown in
According to certain embodiments, the transistor-combination module 610 for a DC-to-DC converter is placed on the chip base 710, and the transistor-combination module 620 for one or more USB output ports and the controller 630 are placed on the chip base 720. For example, the transistor-combination module 610 for a DC-to-DC converter includes the transistor combinations 326 and 328. As an example, the transistor-combination module 620 for one or more USB output ports includes the transistor combinations 374 and 384.
In some embodiments, each high-side transistor combination of the transistor-combination module 610 for a DC-to-DC converter includes two vertically double-diffused metal-oxide-semiconductor field-effect transistors, and each low-side transistor combination of the transistor-combination module 610 for the DC-to-DC converter includes two laterally double-diffused metal-oxide-semiconductor field-effect transistors. For example, the transistor combination 326 includes two transistors 460 and 470 that are vertically double-diffused metal-oxide-semiconductor field-effect transistors. As an example, the transistor combination 328 includes two transistors 460 and 470 that are laterally double-diffused metal-oxide-semiconductor field-effect transistors. For example, the transistor combination 336 includes two transistors 460 and 470 that are vertically double-diffused metal-oxide-semiconductor field-effect transistors. As an example, the transistor combination 338 includes two transistors 460 and 470 that are laterally double-diffused metal-oxide-semiconductor field-effect transistors.
In certain embodiments, each transistor combination of the transistor-combination module 620 for a DC-to-DC converter includes two laterally double-diffused metal-oxide-semiconductor field-effect transistors. For example, the transistor combination 374 includes two transistors 460 and 470 that are laterally double-diffused metal-oxide-semiconductor field-effect transistors. As an example, the transistor combination 384 includes two transistors 460 and 470 that are laterally double-diffused metal-oxide-semiconductor field-effect transistors. For example, the transistor combination 394 includes two transistors 460 and 470 that are laterally double-diffused metal-oxide-semiconductor field-effect transistors.
According to some embodiments, the chip base 710 is biased to a voltage VIN (e.g., the voltage 311). For example, for each high-side transistor combination of the transistor-combination module 610 for a DC-to-DC converter, the drains of its two transistors (e.g., the transistor 460 and the transistor 470) are bonded to the chip base 710 through an electrically conductive adhesive, and the chip base 710 is biased to the same voltage as the drains of its two transistors (e.g., the transistor 460 and the transistor 470). As an example, each pin of the pins 950, 952, 954, 956 and 958 is electrically connected to the chip base 710, and is biased to the voltage VIN, to which the chip base 710 is also biased.
In some examples, the chip base 710 is biased to the voltage 311, the terminal 340 of the transistor combination 326 is biased to the voltage 311, and each pin of the pins 950, 952, 954, 956 and 958 is biased to the voltage 311. For example, each pin of the pins 950, 952, 954, 956 and 958 is biased to the same voltage 311 as the terminal 340 of the transistor combination 326 without using any electrically conductive connecting lines. In certain examples, the chip base 710 is biased to the voltage 311, the terminal 364 of the transistor combination 336 is biased to the voltage 311, and each pin of the pins 950, 952, 954, 956 and 958 is biased to the voltage 311. As an example, each pin of the pins 950, 952, 954, 956 and 958 is biased to the same voltage 311 as the terminal 364 of the transistor combination 336 without using any electrically conductive connecting lines.
According to certain embodiments, the chip base 720 is biased to a ground voltage (e.g., the ground voltage 325). In some examples, if the chip base 720 is biased to the ground voltage (e.g., the ground voltage 325), the controller 630 is bonded to the chip base 720 through an electrically conductive adhesive. For example, the controller 630 includes an electrically conductive bottom surface, which is bonded to the chip base 720 through the electrically conductive adhesive. As an example, the electrically conductive bottom surface of the controller 630 is biased to the ground voltage (e.g., the ground voltage 325) by the chip base 720 through the electrically conductive adhesive.
As shown in
As discussed above and further emphasized here,
According to some embodiments, the present disclosure provides a USB fast charger that includes one or more fast-charging controller chips, wherein for each transistor combination, a current that flows through a main transistor is determined by using a sensing transistor without including a resistor that is in series with the main transistor, in order to lower the costs of the one or more fast-charging controller chips and/or reduce the size of the one or more fast-charging controller chips, as shown in
According to some embodiments, the present disclosure provides a USB fast charger that includes one or more fast-charging controller chips, wherein for each fast-charging controller chip, the number of electrically conductive connecting lines is significantly reduced, in order to lower heat generation and facilitate heat dissipation, thus reducing the risk of overheating of the fast-charging controller chip and also improving energy efficiency of the fast-charging controller chip, as shown in
According to certain embodiments, a chip package of a charging controller chip for a USB charger includes: a high-side main transistor including a first drain, a first gate and a first source, the first drain being configured to receive an input voltage; a low-side main transistor including a second drain, a second gate and a second source, the second source being configured to receive a ground voltage, the second drain being connected to the first source and a first coil terminal of an inductive coil, the inductive coil further including a second coil terminal; one or more port main transistors, each port main transistor of the one or more port main transistors including a third drain, a third gate and a third source, the third drain being biased to a converter voltage and connected to the second coil terminal of the inductive coil, the third source being connected to a USB output port; and a controller coupled to the high-side main transistor, the low-side main transistor, and the one or more port main transistors; wherein each port main transistor of the one or more port main transistors is a part of a port transistor combination that further includes a port sensing transistor, the port sensing transistor including a fourth drain, a fourth gate and a fourth source, the fourth drain being connected to the third drain, the fourth gate being connected to the third gate, the fourth source being connected to the third source. For example, the chip package is implemented according to at least
As an example, the chip package further includes: a first chip base; and one or more second chip bases, each chip base of the one or more second chip bases being electrically insulated from the first chip base; wherein the one or more port main transistors are located on the first chip base. For example, for each port main transistor of the one or more port main transistors, the port sensing transistor is also located on the first chip base. As an example, the high-side main transistor and the low-side main transistor are located on the one or more second chip bases. For example, the one or more second chip bases include a third chip base; the high-side main transistor and the low-side main transistor are located on the third chip base.
As an example, the controller is located on the third chip base. For example, the third chip base is biased at the ground voltage; and the first chip base is biased to the converter voltage. As an example, each port main transistor of the one or more port main transistors is a vertically double-diffused metal-oxide-semiconductor field-effect transistor. For example, the high-side main transistor is a laterally double-diffused metal-oxide-semiconductor field-effect transistor; and the low-side main transistor is a laterally double-diffused metal-oxide-semiconductor field-effect transistor. As an example, the controller is bonded to the third chip base through an electrically conductive adhesive. The chip package of claim 5 wherein the controller is located on the first chip base.
For example, the third chip base is biased at the input voltage; and the first chip base is biased to the ground voltage. As an example, each port main transistor of the one or more port main transistors is a laterally double-diffused metal-oxide-semiconductor field-effect transistor. For example, the high-side main transistor is a vertically double-diffused metal-oxide-semiconductor field-effect transistor; and the low-side main transistor is a laterally double-diffused metal-oxide-semiconductor field-effect transistor. As an example, the controller is bonded to the first chip base through an electrically conductive adhesive.
For example, the high-side main transistor and the low-side main transistor are parts of a DC-to-DC converter, the DC-to-DC converter further including the inductive coil. As an example, the DC-to-DC converter is a buck converter, a boost converter, or a buck-boost converter. For example, the one or more port main transistors are connected to one or more USB output ports respectively; and each output port of the one or more USB output ports is connected to one port main transistor of the one or more port main transistors. As an example, the high-side main transistor is a part of a high-side transistor combination that further includes a high-side sensing transistor, the high-side sensing transistor including a fifth drain, a fifth gate and a fifth source, the fifth drain being connected to the first drain, the fifth gate being connected to the first gate, the fifth source being connected to the first source; and the low-side main transistor is a part of a low-side transistor combination that further includes a low-side sensing transistor, the low-side sensing transistor including a sixth drain, a sixth gate and a sixth source, the sixth drain being connected to the second drain, the sixth gate being connected to the second gate, the sixth source being connected to the second source.
According to some embodiments, a chip package of a charging controller chip for a USB charger includes: a high-side transistor including a first drain, a first gate and a first source; a low-side transistor including a second drain, a second gate and a second source, the low-side transistor being connected to the high-side transistor; one or more port transistors corresponding to one or more USB output ports respectively, each port transistor of the one or more port transistors including a third drain, a third gate and a third source; a first chip base; and a second chip base electrically insulated from the first chip base; wherein: the one or more port transistors are located on the first chip base; and the high-side transistor and the low-side transistor are located on the second chip base. For example, the chip package is implemented according to at least
As an example, the high-side transistor is a part of a high-side transistor combination that is located on the second chip base; the low-side transistor is a part of a low-side transistor combination that is located on the second chip base; and each port transistor of the one or more port transistors is a part of a port transistor combination that is located on the first chip base. For example, the chip package further includes a controller coupled to the high-side transistor, the low-side transistor, and the one or more port transistors.
As an example, the controller is located on the second chip base. For example, each port transistor of the one or more port transistors is a vertically double-diffused metal-oxide-semiconductor field-effect transistor. As an example, the high-side transistor is a laterally double-diffused metal-oxide-semiconductor field-effect transistor; and the low-side transistor is a laterally double-diffused metal-oxide-semiconductor field-effect transistor. For example, the controller is bonded to the second chip base through an electrically conductive adhesive.
As an example, the controller is located on the first chip base. For example, each port transistor of the one or more port transistors is a laterally double-diffused metal-oxide-semiconductor field-effect transistor. As an example, the high-side transistor is a vertically double-diffused metal-oxide-semiconductor field-effect transistor; and the low-side transistor is a laterally double-diffused metal-oxide-semiconductor field-effect transistor. For example, the controller is bonded to the first chip base through an electrically conductive adhesive.
For example, some or all components of various embodiments of the present disclosure each are, individually and/or in combination with at least another component, implemented using one or more software components, one or more hardware components, and/or one or more combinations of software and hardware components. As an example, some or all components of various embodiments of the present disclosure each are, individually and/or in combination with at least another component, implemented in one or more circuits, such as one or more analog circuits and/or one or more digital circuits. For example, various embodiments and/or examples of the present disclosure can be combined.
Although specific embodiments of the present disclosure have been described, it will be understood by those of skill in the art that there are other embodiments that are equivalent to the described embodiments. Accordingly, it is to be understood that the invention is not to be limited by the specific illustrated embodiments.
Number | Date | Country | Kind |
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202310012608.5 | Jan 2023 | CN | national |
202310012633.3 | Jan 2023 | CN | national |
202310012688.4 | Jan 2023 | CN | national |