Claims
- 1. A layer configuration comprising a layer of a nano-porous n-type metal oxide semiconductor with a band-gap of greater than 2.7 eV, an adsorbed cationic spectral sensitizer and a coadsorber capable of enhancing the adsorption of a cationic spectral sensitizer on a n-type metal oxide semiconductor.
- 2. Layer configuration according to claim 1, wherein said coadsorber is an ortho-dihydroxy-benzene compound.
- 3. Layer configuration according to claim 2, wherein said benzene compound with a nitrile group substituted on the same benzene ring as said ortho-dihydroxy-groups.
- 4. Layer configuration according to claim 1, wherein said coadsorber is selected from the group consisting of 2,3-dihydroxy-benzonitrile, 3,4-dihydroxy-benzonitrile, 3,4,5-trihydroxy-benzonitrile, 3,4-dihydroxy-4′-cyano-benzophenone, 4-nitro-catechol, (3,4-dihydroxy-phenyl)methyl-sulphone, 1,2-dihydroxy-anthraquinone, 3,4-dihydroxy-anthraquinone-2-sulphonic acid, 4,5-dihydroxy-benzene-1,3-disulphonic acid, 6,7-dihydroxy-naphthalene-2-sulphonic acid, 3,4-dihydroxy-benzoic acid and catechol.
- 5. Layer configuration according to claim 1, wherein said coadsorber is selected from the group consisting of 3,4-dihydroxy-benzonitrile, 3,4,5-trihydroxy-benzonitrile, 1,2-dihydroxy-anthraquinone, (3,4-dihydroxy-phenyl)methylsulphone, 4,5-dihydroxy-benzene-1,3-disulphonic acid and catechol.
- 6. Layer configuration according to claim 1, wherein said cationic spectral sensitizer is a cyanine dye.
- 7. A photovoltaic device comprising a layer configuration comprising a layer of a nano-porous n-type metal oxide semiconductor with a band-gap of greater than 2.7 eV, an adsorbed cationic spectral sensitizer and a coadsorber capable of enhancing the adsorption of a cationic spectral sensitizer on a n-type metal oxide semiconductor.
- 8. A solar cell comprising a layer configuration comprising a layer of a nano-porous n-type metal oxide semiconductor with a band-gap of greater than 2.7 eV, an adsorbed cationic spectral sensitizer and a coadsorber capable of enhancing the adsorption of a cationic spectral sensitizer on a n-type metal oxide semiconductor.
- 9. A process for preparing a layer configuration, comprising a layer of a nano-porous n-type metal oxide semiconductor with a band-gap of greater than 2.7 eV, an adsorbed cationic spectral sensitizer and a coadsorber capable of enhancing the adsorption of a cationic spectral sensitizer on a n-type metal oxide semiconductor, comprising the steps of: providing a layer of a nano-porous n-type metal oxide semiconductor with a band-gap of greater than 2.7 eV, adsorbing a coadsorber on said nano-porous n-type metal oxide semiconductor layer and adsorbing a cationic spectral sensitizer on said nano-porous n-type metal oxide semiconductor layer.
- 10. Process according to claim 9, wherein said adsorption of said cationic spectral sensitizer on said nano-porous n-type metal oxide semiconductor layer is carried out simultaneously with said adsorption of said coadsorber on said nano-porous n-type metal oxide semiconductor layer.
- 11. Process according to claim 9, wherein said adsorption of said cationic spectral sensitizer on said nano-porous n-type metal oxide semiconductor layer is carried out after said adsorption of said coadsorber on said nano-porous n-type metal oxide semiconductor layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
PCT/EP02/10269 |
Sep 2002 |
WO |
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Parent Case Info
[0001] This application claims the benefit of U.S. Provisional Application No. 60/411,552 filed Sep. 18, 2002, which is incorporated by reference. In addition, this application claims the benefit of International Application No. PCT/EP 02/10269 filed Sep. 12, 2002, which is also incorporated by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60411552 |
Sep 2002 |
US |