Claims
- 1. A sensor for temperature and gas detection comprising a sol gel nanodisk fabricated between conducting electrodes.
- 2. The sensor of claim 1, wherein the sol gel nanodisk comprises a semi-crystallized structure having surface oxygen ions.
- 3. The sensor of claim 2, wherein the semi-crystallized structure comprises an inorganic molecule selected from the group consisting of SnO2,Ti-SnO2, Co-SnO2, Ni-SnO2, Cu-SnO2, Zn-SnO2, Cd-SnO2, Pt-SnO2, TiO2, ZrO2, ZnO, MgO, CaO, Li2O, B2O3, CO, C02, SiO2, GeO2, N2O, NO, N2O3, NO2, N2O5, SO2, S03, SeO2, SeO3, TeO2, TeO3, Cl2O, ClO2, Cl2O7, Br2O, BrO2, I2O5 and I2O7.
- 4. The sensor of claim 1, wherein the conducting electrodes are comprised of a metal.
- 5. The sensor of claim 1, wherein the sensor is fabricated on an insulating substrate.
- 6. The sensor of claim 1, wherein the sol gel nanodisk has a width of about 4 μM and a length of about 5 μM.
- 7. The sensor of claim 1, wherein the sol gel nanodisk comprises an ionic surfactant.
- 8. The sensor of claim 1, wherein the sol gel nanodisk comprises a nonionic surfactant.
- 9. The sensor of claim 1, wherein the sol gel nanodisk comprises poly(ethyleneoxide)-b-poly(propyleneoxide)-b-poly (ethyleneoxide) copolymer.
- 10. A chemical sensor comprising at least two sol gel nanodisks fabricated between conducting electrodes on a single substrate.
- 11. A method of fabricating a nanodisk sensor comprising,
a. contacting a reservoir of a sol gel with a tip; and, b. contacting the tip between electrodes on a surface to deposit a sol gel nanodisk in ohmic contact with the electrodes.
- 12. The method of claim 11, comprising the additional step of contacting a second surface with the tip after contacting the reservoir of a sol gel and before contacting the surface between the electrodes.
- 13. The method of claim 11, wherein the semiconductor sol comprises a compound selected from the group consisting of surfactant, solvent, metal and combinations thereof.
- 14. The method of claim 11, wherein the semiconductor sol comprises copolymer poly(ethyleneoxide)-b-poly(propyleneoxide)-b-poly(ethyleneoxide), ethanol and tin chloride.
- 15. The method of claim 14, wherein the semiconductor sol additionally comprises the ethanol-solvable salt of a metal selected from the group consisting of titanium, cobalt, nickel, copper, zinc, cadmium and platinum.
- 16. The method of claim 11, wherein the tip is a microcantilever.
- 17. The method of claim 11, comprising the additional step of fabricating the electrodes by photolithography and electron bean deposition on a surface prior to contacting the tip.
- 18. A sensor for temperature and gas detection fabricated by a method comprising,
a. contacting a reservoir of a sol gel with a tip; and, b. contacting the tip between electrodes on a surface to deposit a sol gel nanodisk in ohmic contact with the electrodes.
- 19. The sensor of claim 18, wherein the sol gel comprises a tin dioxide selected from the group consisting of SnO2,Ti-SnO2, Co-SnO2, Ni-SnO2, Cu-SnO2, Zn-SnO2, Cd-SnO2, Pt-SnO2, TiO2, ZrO2, ZnO, MgO, CaO, Li2O, B2O3, CO, CO2, SiO2, GeO2, N2O, NO, N2O3, NO2, N2O5, SO2, SO3, SeO2, SeO3, TeO2, TeO3, Cl2O, ClO2, Cl2O7, Br2O, BrO2, I2O5 and I2O7.
- 20. The sensor of claim 18, wherein the electrodes are comprised of a metal.
- 21. The sensor of claim 18, wherein the surface comprises an insulating substrate.
- 22. The sensor of claim 18, wherein the sol gel comprises poly(ethyleneoxide)-b-poly (propyleneoxide)-b-poly(ethyleneoxide) copolymer.
- 23. The sensor of claim 18, wherein the semiconductor sol comprises copolymer poly(ethyleneoxide)-b-poly(propyleneoxide)-b-poly(ethyleneoxide), ethanol and tin chloride.
- 24. The sensor of claim 18, wherein the tip is a microcantilever.
- 25. The sensor of claim 18, comprising the additional step of fabricating the electrodes by photolithography and electron bean deposition on a surface prior to contacting the tip.
- 26. A method of detecting an ambient chemical comprising exposing a sensor to at least one ambient chemical wherein the sensor comprises a sol gel nanodisk fabricated between conducting electrodes.
- 27. The method of claim 26, wherein the sol gel nanodisk comprises a tin dioxide selected from the group consisting of SnO2,Ti-SnO2, Co-SnO2, Ni-SnO2, Cu-SnO2, Zn-SnO2, Cd-SnO2, Pt-SnO2, TiO2, ZrO2, ZnO, MgO, CaO, Li2O, B2O3, CO, CO2, SiO2, GeO2, N2O, NO, N2O3, NO2, N2O5, SO2, SO3, SeO2, SeO3, TeO2, TeO3, Cl2O, ClO2, Cl2O7, Br2O, BrO2, I2O5 and I2O7.
- 28. The method of claim 26, wherein the conducting electrodes are comprised of metal.
- 29. The method of claim 26, wherein the sensor is fabricated on an insulating substrate.
- 30. The method of claim 26, wherein the sol gel nanodisk has a width of about 4 μM and a length of about 5 μM.
- 31. The method of claim 26, wherein the sol gel nanodisk comprises poly(ethyleneoxide)-b-poly (propyleneoxide)-b-poly(ethyleneoxide) copolymer.
- 32. The method of claim 26, wherein conductance between the electrodes following exposure of the sensor occurs in less than about 200 seconds.
- 33. The method of claim 26, wherein the conductance between the electrodes following exposure of the sensor occurs in less than about 10 seconds.
- 34. The method of claim 26, wherein the conductance between the electrodes following exposure of the sensor recovers in less than about 400 seconds.
- 35. The method of claim 26, wherein the conductance between the electrodes following exposure of the sensor recovers in less than about 30 seconds.
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application claims priority under 35 U.S.C. § 119(e) to U.S. Provisional Patent Application Serial No. 60/448,636, which is incorporated herein in its entirety by this reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60448636 |
Feb 2003 |
US |