1. Field of the Invention
The present invention relates to optoelectronic devices, and particularly to a nanostructured anode-cathode array for optoelectronic devices that provides charge collection and injection electrodes necessary for optoelectronic semiconductor devices, such as organic photovoltaics (OPVs) and organic light emitting diodes (OLEDs).
2. Description of the Related Art
Organic optoelectronic devices rely on efficient charge collection and injection from their anode and cathode contact terminals. The next generation of organic semiconductor optoelectronic devices, e.g., OPVs and OLEDs, rely on improved charge collection and injection from/into the active layers.
Thus, a nanostructured anode-cathode array for optoelectronic devices solving the aforementioned problems is desired.
The nanostructured anode-cathode array for optoelectronic devices is an interdigitated anode-cathode electrode configuration that forms an array that increases efficiency in optoelectronic devices. The array configuration allows improved charge injection in a light emitting device and charge collection in photovoltaic devices. The interdigitated anode-cathode array is arranged as a three-dimensional network of metal-oxide and metal electrodes, which include vertically oriented nanorods disposed in a range of patterns, configurations, and volume fractions. The rod and rod-like structures have lateral dimensions in the range of 1 nm-500 nm and lengths of 1 nm-10,000 nm. Such an anode-cathode array can be tuned by altering the dimensions of the individual electrodes and/or modifying the center-to center distance of anode-anode, cathode-cathode or anode-cathode pairs. Minority carrier injection and collection are balanced, while tunability is enhanced. The array includes vertically extending ZnO nanorods connected to a ZnO base electrode. This ZnO structure serves as an electrode for electron collection. The counterelectrode is made of vertically extending Ag nanorods connected to an Ag base electrode.
These and other features of the present invention will become readily apparent upon further review of the following specification and drawings.
Similar reference characters denote corresponding features consistently throughout the attached drawings.
The nanostructured anode-cathode array for optoelectronic devices is an interdigitated anode-cathode electrode configuration that forms an array that increases efficiency in optoelectronic devices. The array configuration allows improved charge injection in a light emitting device and charge collection in photovoltaic devices (e.g., a solar cell). The interdigitated anode-cathode array is arranged as a three-dimensional network of metal-oxide and metal electrodes, which include vertically oriented nanorods disposed in a range of patterns, configurations and volume fractions. Rod and rod like structures having lateral dimensions in the range of 1 nm-500 nm and lengths of 1 nm-10,000 nm are disclosed. Such an anode-cathode array can be tuned by altering the dimensions of the individual electrodes and/or modifying the center-to center distance of anode-anode, cathode-cathode or anode-cathode pairs.
Minority carrier injection and collection are balanced, while tunability is enhanced. The array includes vertically extending ZnO nanorods connected to a ZnO base electrode. This ZnO structure serves as an electrode for electron collection. The counterelectrode is made of vertically extending Ag nanorods connected to an Ag base electrode.
The present nanorod configuration ensures collection of the generated electrons and holes by ZnO and Ag, respectively. The spacing between nanorods can be controlled by using electron beam lithography. The distance between nanorods can be optimized to ensure the best compromise between light absorption and carrier collection. Ag nanowire electrodes have been shown to have a transparency similar to Indium-Titanium-Oxide (ITO). The Ag nanowire electrodes remain the only solution-deposited ITO alternative that meets the performance requirements for photovoltaics, at 10 Ω/Square with 85% transmissivity over the wavelength from 400 to 800 nm. Arrays of vertically aligned, single crystalline silver nanorods can be deposited on silicon substrates via the glancing angle deposition technique using an e-beam system. The single crystalline Ag nanorods are several tens of nanometers in diameter and several hundred nanometers in length. The present anode-cathode array integrates ZnO and Ag nanorod arrays in an interdigitated electrode, so that further enhancement of charge collection is expected, leading to increasing the photocurrent. This has particular relevance to organic solar cells because of the large area between the organic layer and nanorods, compared to the conventional organic solar cell. The interdigitated electrode based on ZnO and Ag nanorod arrays efficiently separate the excitons. The zinc oxide will serve for electron collections, and the silver for hole collections. Moreover, the spacing between the electrodes can be brought down to the diffusion length of the exciton, which can be achieved by using a focused ion beam (F.I.B). Both ZnO and Ag nanorods are combined for collecting photo electrons and holes separately.
Plot 400 of
An exciton is a bound state of an electron and hole, which are attracted to each other by the electrostatic Coulomb force. It is an electrically neutral quasiparticle that exists in insulators, semiconductors and in some liquids. The exciton is regarded as an elementary excitation of condensed matter that can transport energy without transporting net electric charge. Excitons may exhibit a kind of bond stability, i.e., binding energy, in nanostructures that require a driving force to dissociate excitons into free carriers. With reference to the diagram 400, the difference between electron affinity levels of the ZnO and Ag nanorod arrays is the driving force required for exciton dissociation in the cell. In the anode-cathode array, the photo-induced electrons are transferred from active polymer material (LUMO) to the acceptor molecule (Low work function), then to the conduction band (CB) of ZnO nanowires. The holes are transferred from the HOMO to the electron acceptor material (High work function).
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It is to be understood that the present invention is not limited to the embodiments described above, but encompasses any and all embodiments within the scope of the following claims.