Self-assembly of metallic nanostructures through the evolution of material systems toward states of thermodynamic equilibrium has been known. Creation of numerous different structures has been demonstrated by self-assembly process and is as a result of the complex physics of metal systems. Transformation between states, or phases, of matter is a function of various state variables such as temperature, pressure or composition. A change in a thermodynamic variable of an alloy system causes the system to evolve toward a new state of equilibrium, and a new state of the material.
Self-assembly methods offer less laborious and simpler fabrication approaches for materials, structures, and devices than traditional fabrication methods. With the continually decreasing feature sizes in the field of nanostructure fabrication, and the cost of traditional fabrication methods being considerable, the application of self-assembly methods is predicted to stay appealing.
Developing processes that exploit adequately controllable self-assembly methods, that also demonstrate precision, and repeatability has great potential to reduce manufacturing costs of current conventional fabrication processes. These methods can potentially be used in the fabrication of integrated devices such as micro electro mechanical systems (MEMS), BioMEMS, Microflips, and Lab-on-a-chip devices.
One prerequisite to success in the field, is the ability to securely attach nanowires at desired locations. General approaches used are as follows. One method is using mechanical or fluidics means to transport a nanostructure to a location proximate to the target and applies an electric field or electron beam to attach the object. A second class of methods is to grow nanowires on chemically patterned surfaces. Although nanowires can be grown selectively from catalyst nanoparticles by plasma enhanced chemical vapor deposition, due to the small size of the particles, the required positioning of the nanoparticles at selected locations can be quite difficult. Also, high temperatures in the PECVD and other chemical vapor deposition (CVD) methods can damage the substrate material. However, the goal in all of these approaches has been to attach one end of the nanostructures to only one point of another material, and nanostructures were never seen as means for electrical connections between two or more conductors.
In the past two decades several nano nanomaterial (e.g. nanowires, nanotubes) have been discovered and their very unique electrical and mechanical properties have been demonstrated using state-of-the-art E-Beam nanolithography approach. However, the key limitations of E-Beam lithography are (1) low throughput, (i.e., the very long processing time), (2) high complexity of the process, and (3) being a serial process. Therefore, using E-Beam lithography, it would be very difficult to fabricate inexpensive nanostructure based devices integrated into microelectronic circuits.
In one embodiment of the present inventions, a nano wire-bonding (NWB) instrument is used for electrical wire bonding of nanostructure at the nanoscale. In this embodiment, by mobilizing a gallium droplet, the instrument is capable of creating electrical contact with nanostructures by forming an ohmic contact, via a silver-gallium (Ag2Ga) nanowire, between the nanostructures and the micro pattern in a device. In one embodiment, the instrument is further capable of: (1) Growing nanowires at any selective location and orientation while controlling the length and diameter of nanowires; (2) Growing nanowires that are clamped between two sub-micrometer size patterns (coated with silver) and electrically connecting them; (3) Growing freestanding nanowires at selected location.
In one embodiment the elements and steps of the novel NWB method are: (1) A micromanipulator capable of moving a nozzle or tungsten probe with sub 100 nm resolution; (2)
A micropipette with nozzle as small as 1 to 50 μm; (3) A mechanical syringe to inject gallium into the nozzle. The pressure is adjusted to control the flow of gallium and the size of the droplet; (4) in this embodiment, gallium interacts with the silver film, forming Ag2Ga nanowires, when gallium touches silver. In this embodiment, gallium only sticks to a few metals (silver, gold, aluminum, etc) and does not stick to silicon or silicon oxide, therefore even if the gallium droplet is larger than the silver pattern, liquid gallium self-aligns and no gallium residue is deposited on the area around the silver pattern; (5) In one embodiment, to enhance the needle formation, the nozzle is coated prior to filling it with gallium. This step enhances the wetting effect of gallium in the micropipette and facilitates the gallium fellow. In addition, solution of the silver into the gallium increases the yield of the formation of the nanowire; (6) In one embodiment, Ga droplet size is controlled by the Nozzle size and the pressure is applied by the syringe. Gallium droplet size, the thickness of silver film on the pattern, thickness of the silver film coated on the nozzle, the time that the droplet is in contact with the substrate, and the puling speed are the parameters that can control the length and diameter of the formed nanowires.
In other embodiments, other metal substrates such as platinum, gold, etc may be used for fabrication of different shape nanostructures.
The present invention, in one embodiment, enables a novel nono-device fabrication capability that can be adopted by the microelectronics industry. Nanowire Bonding (NWB) impacts a much broader set of technologies. NWB provides a set of tools to the scientists and technologists enabling them to quickly and inexpensively characterize electrical and electromechanical properties of the nanostructures. Using embodiments of the present invention, many novel nanostructure based devices are fabricated and evaluated for various applications and a much broader class of Nanoelectromechanical Systems (NEMS) could be produced very cost effectively. Since the NWB are fabricated with high throughput, it is expected to be adopted by micro/nanoelectronic industry for integrating nanostructures into electronic circuits
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In one embodiment, suspended nanostructures of silver-gallium (115, 119) are clamped between two patterns of silver (107 and 111) pads that are made by standard optical photolithography. Using a micromanipulator (211), a micro nozzle (103) filled with molten gallium (105) is brought in contact with silver pads (107). In this embodiment, the gallium droplet (105) interacts with the silver to form conductive Ag2Ga nanowires (109) at room temperature. By pulling the micro nozzle from the pad, a single Ag2Ga nonowire forms between the pad and the gallium drop (109). Further pulling the nozzle and touching (113) the other silver pad (111), causes the Ag2Ga nanostructure (115, 119) to be clamped into the other silver pad (111) and suspend between the two silver pads (111, 121). The gallium droplets (113) placed on the contact pads do not spread out across the entire surface of the chip, but instead follow the path defined by the patterned silver (117).
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In an embodiment of the present invention, a method for growing nanostructures comprises forming a pattern on a substrate (107), loading liquid gallium in a micropipette (101) having a nozzle (103); and applying pressure to the micropipette by a mechanical syringe to dispense the liquid gallium in the form of a droplet (105). In this embodiment, the micropipette (101) is guided by a micromanipulator.
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In another embodiment, the nanostructures (109) bridge over one another as shown in
In the embodiment shown in
In an alternative embodiment of the present invention, nanostructures are grown by the following steps: forming a pattern on a substrate, a solid probe (401) carrying liquid gallium; and the liquid gallium (105) being mobilized by the solid probe (401). In this embodiment, the solid probe (401), instead of a micropipette, is guided by a micromanipulator. In a further embodiment, the solid probe (401) is made of tungsten.
In one embodiment the tip of the wire/probe (micronozzle) has a high aspect ratio and is in microscale range (between 1 to 10 um) and the micropipette is highly flexible.
In an embodiment, the internal surface of the micropipette is coated (by for example silver, platinum, gold, aluminum, copper, cobalt or iron) to facilitate the flow of gallium.
In one embodiment, high precision micro injection system, injects small amount of liquid gallium.
In one embodiment, gallium metal in liquid phase mixed with Ag2Ga crystals in solid Phase are used for better ohmic contacts.
In an embodiment of the present invention, nano wire-bonding (NWB) methods include the following. An instrument for wire bonding and nanostructure fabrication at the nanoscale: by mobilizing a gallium droplet, an instrument is designed capable of making different configuration of Ag2Ga nanowires. The instrument is capable of: (1) Growing nanowires at any selective location and orientation while controlling the length and diameter; (2) Growing nanowires that are clamped between two sub micrometer size pattern (coated with silver) and electrically contact them; (3) Growing freestanding nanowires at selected location.
In one embodiment, upon touching the gallium droplet to the silver patterns, gallium interacts with the silver film, forming Ag2Ga nanowires. Gallium only adheres to a few metals (silver, gold, platinum, iron, cobalt, aluminum, etc.) and does not adhere to silicon or silicon oxide. Therefore, even if the gallium droplet is larger than the silver pattern, gallium self aligns with the silver film and no gallium residues are deposited on the area around the silver pattern. Other liquid metals such as mercury, cesium, etc. may be used for other metal crystalline structures.
In one embodiment, to enhance the needle formation, the nozzle is coated with metal such as silver, gold, platinum, iron, cobalt, aluminum, etc, prior to filling it with gallium. This step enhances the gallium wetting to the micropipette and facilitate the gallium follow. In addition, silver film is dissolved into the gallium and this increases the yield of the formation of the nanowire.
In one embodiment, gallium droplet size is controlled by the Nozzle size. Gallium droplet size, the thickness of silver film on the pattern, thickness of the silver film coated on the nozzle, the time that the droplet is in contact with the substrate, and the puling speed are the parameters that can control the length and diameter of the formed nanowires.
In other embodiments, other metal substrates such as platinum, gold, etc may be used for fabrication of different shape nanostructures or coating of the nozzle area. In yet other embodiments, other liquid metals such as mercury, cesium, etc. may use for other metal crystalline structures. In still other embodiments, other metal such as palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof are considered and used.
In other embodiments, the substrates are Silicon, germanium, or gallium containing substrates. In yet other embodiments of the present invention, aluminum or indium is mobilized for fabricating the nanostructures.
In one embodiment, prior to loading mechanical syringe or micropipette with the liquid gallium, the nozzle is coated with a material such as silver, platinum, gold or aluminum.
In another embodiment, to control the flow of liquid gallium and to control the size of the droplets, adjustable pressure is applied to the mechanical syringe (
In one embodiment, excess amounts of the liquid gallium, fuse exclusively to the patterns due to selective adherence of the liquid gallium to the patterns. Therefore, no quantities of the liquid gallium directly contacts the substrate.
In one embodiment as shown in
In one embodiment, the nanostructures are used for sensing applications including similar to sensing applications micro cantilever beams are used for.
A further embodiment of the present invention aims to develop a high throughput and low cost process and tool to make electric contact with nano-materials (e.g. nanotubes and nanowires) and integrate them into electronic circuits. This exemplary method will have enormous impact on using nanomaterial in the chip manufacturing industry.
In a further embodiment, the processes of NWB is performed in parallel as shown in
In one embodiment, the NWB machine grows the nanostructures on predetermined locations on the pattern of the substrate, with various orientations, and with control over the dimensions of the nanostructures. In an alternative embodiment, the NWB machine, simultaneously grows many nanostructures in a parallel process.
A system, an apparatus, a device, or an article of manufacture comprising one of the following items is an example of the invention: nanostructures, nanowires, micromanipulation, micropipettes, silver coatings, gallium droplets, silver-gallium droplets, nano-bonds, applying the method mentioned above, for the purpose of the current invention or nanowire bonding.
An apparatus, device, or an article of manufacture comprising any one of the items mentioned in the above embodiments is an example of the invention. A method comprising one of the following steps, features, or items is an example of the invention: mobilizing gallium in liquid phase, creating gallium droplets, bringing into contact the galliums droplets into coated substrates, pulling the applicator from the substrates, creating nanostructures, or using the apparatus or system mentioned above, for the purpose of the current invention or nanowire/nanostructure bonding.
Any variations of the above teaching are also intended to be covered by this patent application.
This application claims the benefits of the provisional patent application 61/330,123 filed on Apr. 30, 2010.
This invention was made with Government support under Grant #IIP-0944435 awarded by National Science Foundation and Grant #KSTC184-512-10-082 awarded by Kentucky Science Technology Corporation. The government has certain rights in the invention.
Number | Date | Country | |
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61330123 | Apr 2010 | US |