Nanowires and method for making the same

Abstract

A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 a shows a transmission electronic microscopic picture of ZnSe nanowires according to Embodiment 1 of the present invention.

FIG. 1 b shows a scanning electronic microscopic picture of ZnSe nanowires according to Embodiment 1 of the present invention.

FIG. 2 shows a transmission electronic microscopic picture of ZnTe nanowires according to Embodiment 2 of the present invention.

FIG. 3 shows a transmission electronic microscopic picture of ZnS nanowires according to Embodiment 3 of the present invention.

FIG. 4 shows a transmission electronic microscopic picture of CdSe nanowires according to Embodiment 4 of the present invention.

Claims

1. A method for manufacturing nanowires, comprising the steps of: (a) providing a first precursor solution containing a group IIB element, and a second precursor solution containing a group VIA element;(b) heating and mixing the first precursor solution and the second precursor solution to form a mixed solution; and(c) cooling and separating the mixed solution to obtain nanowires;wherein, the first precursor solution comprises a compound of IIB group element and a surfactant, the second precursor solution comprises a compound of VIA group element, and the surfactant is an organic acid having an aromatic functional group or a salt thereof.

2. The method as claimed in claim 1, wherein the length of the nanowire ranges from 150 nm to 1000 nm.

3. The method as claimed in claim 1, wherein the length of the nanowire ranges from 200 nm to 800 nm.

4. The method as claimed in claim 1, wherein the group IIB element is zinc (Zn), cadmium (Cd), mercury (Hg), or the combination thereof.

5. The method as claimed in claim 1, wherein the compound of IIB group element is zinc oxide, cadmium oxide, mercury oxide, or the combination thereof.

6. The method as claimed in claim 1, wherein the compound of IIB group element is zinc oxide.

7. The method as claimed in claim 1, wherein the group VIA element is sulfur (S), selenium (Se), tellurium (Te), or the combination thereof.

8. The method as claimed in claim 1, wherein the nanowire is a compound selected from a group consisting of ZnSe, CdSe, HgSe, ZnS, CdS, HgS, ZnTe, CdTe, HgTe, and ZnSeS.

9. The method as claimed in claim 1, wherein the nanowire is a compound of ZnSe, ZnTe, ZnS, or CdSe.

10. The method as claimed in claim 1, wherein the first precursor solution further comprises a tri-n-octylphosphine oxide (TOPO) solvent.

11. The method as claimed in claim 1, wherein the second precursor solution further comprises a tri-n-octylphosphine (TOP) solvent, or a tributylphosphine (TBP) solvent.

12. The method as claimed in claim 1, wherein the surfactant is benzoic acid, terephthalic acid, para-phenylene-diacetic acid, para-phenylene-diproponic acid, isophthalic acid, meta-phenylene-diacetic acid, meta-phenylene-diproponic acid, phthalic acid, ortho-phenylene-diacetic acid, or ortho-phenylene-diproponic acid.

13. The method as claimed in claim 1, wherein the heating temperature of step (b) ranges from 100° C. to 400° C.

14. The method as claimed in claim 1, further comprising a step of preheating the first precursor solution to a predetermined temperature of 100° C. to 400° C. before the first precursor solution and the second precursor solution is heated and mixed in step (b).

15. A nanowire represented by formula (1): MX   (I)wherein M is zinc (Zn), cadmium (Cd), mercury (Hg), or the combination thereof, X is sulfur (S), selenium (Se), tellurium (Te), or the combination thereof, and the length of the nanowire ranges from 150 nm to 1000 nm.

16. The nanowire as claimed in claim 15, wherein the nanowire is a compound of ZnSe, ZnTe, ZnS, or CdSe.

17. The nanowire as claimed in claim 15, wherein the length of the nanowire ranges from 200 nm to 800 nm.

18. The nanowire as claimed in claim 15, wherein the length of the nanowire ranges from 200 nm to 600 nm.

19. The nanowire as claimed in claim 15, wherein the nanowire is in a shape of wound-thread.

20. The nanowire as claimed in claim 15, wherein the nanowire is in a shape of a rod.