1. Field of the Invention
The present invention relates to integrated circuits and to voltage regulators disposed on integrated circuits. More particularly, the present invention relates to negative voltage regulators for integrated circuits and negative voltage regulators having trimmable settings.
2. The Prior Art
Existing voltage regulator circuits often include a comparator having a non-inverting input coupled to a voltage reference source and an inverting input coupled to a voltage divider having one end coupled to a positive voltage potential and another end coupled to a negative voltage potential. Such a portion of a voltage regulator circuit is shown in
In any given individual circuit such as the one depicted in
According to one aspect of the present invention, a stable reference voltage provides a voltage potential. A first voltage divider includes a first resistor having a first resistance and coupled to a positive voltage reference potential in series with a second resistor having a second resistance and coupled to ground. A second voltage divider includes a first resistor having the first resistance and coupled to a positive voltage reference potential in series with a second resistor having the second resistance, the second resistor in series with a third resistor having a third resistance and coupled to a negative voltage potential. A comparator has an inverting input coupled to the first voltage divider between the first and second resistors and a non-inverting input coupled to the second voltage divider between the second and third resistors. The output of the comparator is used to control the output voltage of the regulator. The values of the first resistors in both voltage dividers are equal. The values of the second resistors in both voltage dividers are equal. The value of the third resistor in the second voltage divider is chosen such that it will drop a voltage equal in magnitude to the target voltage to be regulated when the voltage regulator output is equal to that target voltage.
According to a second aspect of the present invention, the voltage dividers may include electronically trimmable resistors. For example, the third resistor in the second voltage divider may be electronically trimmable. In another example, the first resistor of the first voltage divider and the first resistor of the second voltage divider are both electronically trimmable. In another example, the second resistor of the first voltage divider and the second resistor of the second voltage divider are both electronically trimmable. In yet another example, the first resistor of the first voltage divider and the first resistor of the second voltage divider are both electronically trimmable, and the second resistor of the first voltage divider and the second resistor of the second voltage divider are both electronically trimmable.
Persons of ordinary skill in the art will realize that the following description of the present invention is illustrative only and not in any way limiting. Other embodiments of the invention will readily suggest themselves to such skilled persons.
Referring now to
The output of amplifier 22 drives two voltage dividers. The first voltage divider is formed from resistors 24 and 26 and is referenced to ground potential. The second voltage divider is formed from resistors 28, 30, and 32 and is referenced to the negative voltage (shown in
The node 34, comprising the common terminals of resistors 24 and 26 in the first voltage divider, is coupled to the inverting input of a comparator 36. The node 38, comprising the common terminals of resistors 28 and 30 in the second voltage divider, is coupled to the inverting input of a comparator 36.
According to the present invention, the resistors 24 and 28 have the same value of resistance RA, and the resistors 26 and 30 have the same value RB. The resistor 32 has the value of resistance RC. In addition, all of the resistors 24, 26, 28, 30, and 32 are formed physically adjacent to one another in the integrated circuit in order to track closely with one another as a function of temperature.
The voltage V34 at node 34 can be expressed as:
V34=VBG(RB/(RA+RB))
and the voltage V38 at node 38 can be expressed as:
V38=(VBG−VNEG)((RB+RC)/(RA+RB+RC))
When the voltage VNEG is zero prior to startup of the negative-voltage charge pump, this expression can be rewritten as:
V38=(VBG−0)((RB+RC)/(RA+RB+RC)).
According to the present invention, when the voltage VNEG reaches its target value at the regulation point, the comparator 36 is at its trip point where V34=V38 since the value RC of resistor 32 is chosen such that the voltage will be zero at second voltage divider node 40, comprising the common terminals of resistors 30 and 32 when the voltage VNEG reaches its target value. In this case, the expression for the voltage V38 at node 38 can be rewritten as:
V38=VBG(RB/(RA+RB))
as is the case for the voltage V34, since now V34=V38.
As an example, if VBG is set at +1.25V, and the target value for VNEG is set at −10V, the values of RA, RB, and RC may be chosen to be 50 k ohms, 59.625 k ohms, and 877 k ohms, respectively. At startup, when the voltage VNEG is at zero volts, the voltage V34 at node 34 will be 0.6799 volts, the voltage V38 at node 38 will be 0.949 volts, and the voltage V40 at node 40 will be 0.88 volts.
As the charge pump begins to operate, voltage VNEG starts to drop below zero volts. When VNEG reaches its target value of −10V, the voltage V34 at node 34 in this example will be 0.6799 volts, the voltage V38 at node 38 will also be 0.6799 volts, and the voltage V40 at node 40 will be 0 volts. At this point, the voltages across resistors 24 and 26 will be the same as the voltages across resistors 28 and 30, since the bottom terminals of resistors 26 and 30 are both at ground potential. As VNEG becomes increasingly negative past this point, comparator 36 will trip.
The output of comparator 36 may thus be used to control the voltage VNEG, as shown in
Referring now to
Referring now to
Resistors 52, 54, 56, and 58 may be individually bypassed by short circuiting them. Thus, resistor 52 may be short circuited by turning on n-channel MOS transistor 62 by activating gate bias circuit 64. Similarly, resistor 54 may be short circuited by turning on n-channel MOS transistor 66 by activating gate bias circuit 68, resistor 56 may be short circuited by turning on n-channel MOS transistor 70 by activating gate bias circuit 72, and resistor 58 may be short circuited by turning on n-channel MOS transistor 74 by activating gate bias circuit 76. Resistor 60 is not associated with a bypass transistor.
Typically, the value of resistor 60 is chosen to constitute the majority of the total value of series resistance of resistors 52, 54, 56, 58, and 60, and the remaining component of the total resistance of 52, 54, 56, 58, and 60 is made up of resistors 52, 54, 56, and 58. In an exemplary embodiment, resistor 60 may constitute 90% of the total resistance and the remaining 10% of the total resistance may be equally divided among resistors 52, 54, 56, and 58. Persons skilled in the art will appreciate that other arrangements for splitting the total resistance among resistors 52, 54, 56, 58, and 60 are contemplated within the scope of the present invention.
The trimmable resistor 50 may be used in place of both resistances RA, both resistances RB, or resistance RC. As will be appreciated by persons of ordinary skill in the art, the design of gate bias circuits 64, 68, 72, and 76 will change depending on which resistance trimmable resistor 50 is used to replace as well as on the resistance value allocation scheme employed for trimmable resistor 50. The reason for this is that the gate voltage to be applied to each of n-channel MOS transistors 52, 54, 56, and 58 will have to be positive with respect to the voltage that appears on its source. The source voltage of the n-channel MOS transistor to be turned on will, in turn, depend upon where in the voltage-divider chain trimmable resistor 50 is placed, i.e., which of resistor pairs 24 and 28, 26 and 30, or resistor 32 by itself is replaced by trimmable resistor 50, as well as on the resistance value allocation scheme employed for trimmable resistor 50. As will be appreciated by such skilled persons, the gate bias circuit will consume more die area where resistance RC of resistor 32 is to be replaced by trimmable resistor 50 since the sources of the n-channel MOS transistors will be at negative potentials and it must be assured that the gates and bulks of the n-channel MOS transistors must be biased at the lowest negative voltage to assure that they will be turned off.
While embodiments and applications of this invention have been shown and described, it would be apparent to those skilled in the art that many more modifications than mentioned above are possible without departing from the inventive concepts herein. The invention, therefore, is not to be restricted except in the spirit of the appended claims.
Number | Name | Date | Kind |
---|---|---|---|
5686821 | Brokaw | Nov 1997 | A |
6040736 | Milanesi et al. | Mar 2000 | A |
7023262 | Sim et al. | Apr 2006 | B1 |