Ghandhi, "VLSI Fabrication Principles," Silicon and Gallium Arsenide pp. 495-496, 1983. |
J. Kim, A.B. Joshi, G.W. Yoon and D.L. Kwong, "Effects of Residual Surface Nitrogen on the Dielectric Breakdown Characteristics of Regrown Oxides", Proc. of Symp. on VLSI-TSA, p. 100, 1993. |
A. Battacharyya, C. Vorst and A.H. Carim, "A Two-Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin Oxides", J. Eletrochem. Soc., vol. 132, No. 8, p. 1900, 1985. |
J.C. Chen, S. Holland and C. Hu, "Electrical Breakdown in Thin Gate and Tunnelling Oxides", IEEE Trans. Electron Devices, vol. ED-32, p. 413, 1985. |