Claims
- 1. A semiconductor laser structure comprising:a substrate; a plurality of III-V nitride semiconductor layers formed on said sapphire substrate, at least one of said plurality of III-V nitride semiconductor layers forms an active region; a first semiconductor layer being p-type III-V nitride semiconductor, a second semiconductor layer formed on said first semiconductor layer, said a second semiconductor layer being n-type oxide semiconductor, tunnel junction means disposed between said first semiconductor layer and said second semiconductor layer for injecting current into said active region; and wherein a sufficient forward bias is applied to said active region to cause lasing from a surface of said semiconductor laser structure.
- 2. The semiconductor laser structure of claim 1 wherein one of said plurality of III-V nitride semiconductor layers is an electron blocking layer formed on said active region, said electron blocking layer being p-type III-V nitride semiconductor layer, and said first semiconductor layer is formed on said electron blocking layer.
- 3. The semiconductor laser structure of claim 1 further comprising a first distributed Bragg reflector between said substrate and said active region, a second distributed Bragg reflector formed on said plurality of III-V nitride semiconductor layers, said lasing being from a surface of said second distributed Bragg reflector.
- 4. A semiconductor light emitting diode structure comprising:a substrate; a plurality of III-V nitride semiconductor layers formed on said sapphire substrates at least one of said plurality of III-V nitride semiconductor layers forms an active region; a fist semiconductor layer being p-type III-V nitride semiconductor, a second semiconductor layer formed on said first semiconductor layer, said a second semiconductor layer being n-type oxide semiconductor, tunnel junction means disposed between said first semiconductor layer and said second semiconductor layer for injecting current into said active region; and wherein a sufficient forward bias is applied to said active region to cause light emission from a surface of said semiconductor light emitting diode structure.
- 5. The semiconductor light emitting diode structure of claim 4 wherein one of said plurality of III-V nitride semiconductor layers is an electron blocking layer formed on said active region, said electron blocking layer being p-type III-V nitride semiconductor layer, and said first semiconductor layer is formed on said electron blocking layer.
- 6. The semiconductor light emitting diode structure of claim 4 further comprising a first distributed Bragg reflector between said substrate and said active region.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application contains subject matter that is related to subject matter of U.S. Patent Application Serial. No. 10/024,417 entitled “EDGE-EMITTING NITRIDE-BASED LASER DIODE WITH P-N TUNNEL JUNCTION CURRENT INJECTION”, filed concurrently with this application, commonly assigned to the same assignee herein and herein incorporated by reference.
US Referenced Citations (8)