Claims
- 1. A nitride semiconductor device comprising:a substrate made of a III-V group compound semiconductor containing nitride and having a main surface and primary and secondary cleavage surfaces; and a function region made of a III-V group compound semiconductor layer containing nitride formed on the main surface of the substrate and extending in a [0001] direction; wherein the main surface of the substrate is a surface tilted from a {0001} plane by tilt angle θ of 90° and the primary cleavage surface is along the {0001} plane and the secondary cleavage surface is along an {11-20} plane.
- 2. The nitride semiconductor device of claim 1, wherein the main surface of the substrate is perpendicular to the {11-20} plane.
- 3. The nitride semiconductor device of claim 1, wherein the function region is an active layer that emits light, and the {0001} plane of the substrate is an optical resonator plane.
- 4. The nitride semiconductor device of claim 1, wherein the main surface of the substrate is a {1-100} plane.
- 5. The nitride semiconductor device of claim 4, wherein the function region is an active layer that emits light, and the {0001} plane of the substrate is an optical resonator plane.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-345806 |
Dec 1999 |
JP |
|
Parent Case Info
This appl is a Divisional of prior application Ser. No. 09/729,424 filed Dec. 5, 2000, now U.S. Pat. No. 6,653,663.
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