NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING SAME

Abstract

A nitride semiconductor laser element, comprises a substrate, a nitride semiconductor layer laminated on said substrate and having a ridge on its surface, a first protective film that covers said nitride semiconductor layer, and an electrode form on the ridge and the first protective film, wherein the first protective film covers part of the nitride semiconductor layer surface in a contact state, and covers from the periphery around the base of the ridge to the side faces of the ridge in a non-contact state, resulting in a cavity being disposed from said ridge side faces to the ridge base periphery.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 a and 1c are simplified cross-sectional views of the main components of the nitride semiconductor laser elements of the present invention, 1b is enlarged cross-sectional view of the part structure thereof;

FIG. 2 a to 2d are simplified cross-sectional process views illustrating the method for manufacturing the nitride semiconductor laser element of the present invention;

FIG. 3 a to 3b are simplified cross-sectional process views illustrating the method for manufacturing the nitride semiconductor laser element of the present invention;

FIG. 4 a to 4b are simplified cross-sectional process views illustrating the method for manufacturing the nitride semiconductor laser element of the present invention;

FIG. 5 a to 5f are simplified cross sections illustrating modifications of the cavity in the nitride semiconductor laser element of the present invention;

FIG. 6 is a graph of the relationship between operating current and time for the nitride semiconductor laser element of the present invention; and

FIG. 7 is a graph of the relationship between relative strength and FFP for the nitride semiconductor laser element of the present invention.

Claims

1. A nitride semiconductor laser element, comprising a substrate, a nitride semiconductor layer laminated on said substrate and having a ridge on its surface, a first protective film that covers said nitride semiconductor layer, and an electrode formed on the ridge and the first protective film, wherein the first protective film covers part of the nitride semiconductor layer surface in a contact state, and covers from the periphery around the base of the ridge to the side faces of the ridge in a non-contact state, and a cavity is disposed from said ridge side faces to the ridge base periphery.

2. The element according to claim 1, wherein the cavity is wider at the ridge base periphery than at the ridge side faces.

3. The element according to claim 1, wherein the cavity height is at least 30 nm and 1 μm or less.

4. The element according to claim 1, wherein the first protective film has a lower refractive index than the nitride semiconductor layer.

5. The element according to claim 1, wherein part of the cavity is defined by the electrode.

6. The element according to claim 1, wherein the cavity is disposed substantially parallel to the ridge.

7. The element according to claim 1, wherein the first protective film is a multilayer structure comprising two or more layers of different compositions.

8. The element according to claim 1, further comprising a second protective film on the first protective film.

9. A method for manufacturing a nitride semiconductor laser element, comprising the steps of: forming a nitride semiconductor layer on a substrate;forming a mask pattern on said nitride semiconductor layer and forming a ridge using said mask pattern for etching;forming a first protective film on both sides of the ridge, the mask pattern, and nitride semiconductor layer exposed after the formation of the ridge; andremoving the first protective film present on the mask pattern, and the mask pattern, and removing the first protective film extending from the ridge side faces to the ridge base periphery to form an cavity in at least part of the region which is an interface between the nitride semiconductor layer and the first protective film, and is extending from both sides of the ridge to the surface of the nitride semiconductor layer on both sides of the ridge.

10. The method according to claim 9, wherein the first protective film is a multilayer structure comprising two or more layers of different compositions.

11. The method according to claim 9, wherein the first protective film is formed by a lower layer and an upper layer of different dissolution rates.

12. The method according to claim 9, wherein the lower layer of the first protective film is formed from the same material as the first mask pattern.