Claims
- 1. A resistive structure, comprising:
a diffusion-resistant aluminum conductive layer; and a resistor layer over said conductive layer, wherein said resistor layer comprises nitrogen and phosphorus-doped amorphous silicon comprising between about 5 and 15 atomic percent nitrogen, and about 1×1020 to 5×1020 atoms/cm3 phosphorus.
- 2. The resistive structure of claim 1, further comprising a chromium layer between the aluminum layer and the resistor layer.
- 3. The resistive structure of claim 1, wherein the conductive layer has a thickness of between about 2,000 and 2,500 Å.
- 4. The resistive structure of claim 1, wherein the resistor layer has a thickness of between about 2,000 and 7,500 Å.
- 5. A field emission display device, comprising:
a substrate; a diffusion-resistant conductive layer over the substrate; an amorphous silicon resistor layer over the conductive layer, the resistor layer being doped with nitrogen and phosphorus; a dielectric layer over the resistor layer; and a gate electrode over the dielectric layer, the gate electrode including a gate conductive layer.
- 6. The field emission display device of claim 5, wherein the resistor layer has a nitrogen concentration of between about 5 and 15 atomic percent.
- 7. The field emission display device of claim 5, wherein the conductive layer includes a layer of aluminum.
- 8. The field emission display device of claim 7, wherein the conductive layer further includes a layer of chromium formed over the layer of aluminum to prevent diffusion between the aluminum layer and the amorphous silicon layer.
- 9. A field emission display device, comprising:
a substrate; a diffusion-resistant aluminum conductive layer over the substrate; an amorphous silicon resistor layer over the conductive layer, the resistor layer being doped with nitrogen and phosphorus; a dielectric layer over the resistor layer; and a gate electrode over the dielectric layer, the gate electrode including a gate conductive layer.
- 10. The field emission display device of claim 9, wherein the resistor layer has a nitrogen concentration of between about 5 and 15 atomic percent and about 1×1020 to 5×1020 atoms/cm3 phosphorus.
- 11. A field emission display device, comprising:
a substrate; a diffusion-resistant conductive layer over the substrate; an amorphous silicon resistor layer over the conductive layer, the resistor layer being doped with nitrogen and phosphorus; a dielectric layer over the resistor layer; and a gate electrode over the dielectric layer, the gate electrode including a gate conductive layer, wherein the conductive layer comprises a layer of chromium formed over a layer of aluminum to prevent diffusion between the aluminum layer and the amorphous silicon layer.
- 12. The field emission display device of claim 11, wherein the resistor layer has a nitrogen concentration of between about 5 and 15 atomic percent.
- 13. The resistive structure of claim 11, wherein the conductive layer has a thickness of between about 2,000 and 2,500 Å.
- 14. The resistive structure of claim 11, wherein the resistor layer has a thickness of between about 2,000 and 7,500 Å.
RELATED APPLICATIONS
[0001] This is a continuation of U.S. patent application Ser. No. 09/388,697, filed Sep. 2, 1999, the disclosure of which is incorporated herein by reference in its entirety.
REFERENCE TO GOVERNMENT CONTRACT
[0002] This invention was made with United States Government support under Contract No. DABT63-97-C-0001, awarded by the Advanced Research Projects Agency (ARPA). The United States Government has certain rights in this invention.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09388697 |
Sep 1999 |
US |
Child |
10644443 |
Aug 2003 |
US |