Claims
- 1. A method of fabrication of a non-linear control element for a flat display screen placed on a flat face of a substrate, comprising a plurality of layers stacked on said flat face of the substrate and consisting successively of a first layer of metallic material, a first layer of undoped amorphous semiconductor material, a layer of doped amorphous semiconductor material, a second layer of undoped amorphous semiconductor material, a second layer of metallic material, comprising the following successive steps:
- (a) a first step involving deposition of a first layer of metallic material;
- (b) a second step involving deposition of a first layer of undoped amorphous semiconductor material;
- (c) a third step involving deposition of a layer of doped amrophous semiconductor material;
- (d) a fourth step involving deposition of a second layer of undoped amorphous semiconductor material;
- (e) a fifth step involving deposition of a second layer of metallic material;
- (f) a sixth step which involves etching of a control column in the aforementioned layers deposited during previous steps;
- (g) a seventh step involving passivation of the flanks of the column formed during the preceding step;
- (h) an eighth step involving deposition of a layer of conductive material over both the substrate and the column;
- (i) a ninth step which involves etching of at least one control electrode in the layer of conductive material, said control electrode being connected to the second layer of metallic material.
- 2. A method of fabrication of a non-linear control element for a flat display screen placed on a flat face of a substrate on said flat face of the substrate and consisting successively of a first layer of metallic material, a first layer of undoped amorphous semiconductor material, a layer of doped amorphous semiconductor material, a second layer of undoped amorphous semiconductor material, a second layer of metallic material, comprising the following steps:
- (a) a first step involving deposition of a layer of conductive material;
- (b) a second step involving deposition of a first layer of metallic material;
- (c) a third step which involves forming of at least one ocntrol electrode by ethcing said layer of conductive material and said first layer of metallic material;
- (d) a fourth step involving deposition of a first layer of undoped amorphous semiconductor material;
- (e) a fifth step involving deposition of a layer of doped amorphous semiconductor material;
- (f) a sixth step involving deposition of a second layer of undoped amorphous semiconductor material;
- (g) a seventh step involving deposition of a second layer of metallic material;
- (h) an eighth step which involves etching of a control column in the aforementioned layers deposited during previous steps but without attacking the control electrode and in such a manner as to ensure that a portion of said column is in contact with said control electrode.
- 3. A method according to claim 2, wherein the third etching step is carried out prior to the second step involving deposition of a first layer of metallic material.
- 4. A method of fabrication of a nonlinear control element for a flat display screen placed on a flat face of a substrate, comprising a plurality of layers stacked on said flat face of the substrate and consisting successively of a first layer of metallic material, a first layer of undoped amorphous semiconductor material, a layer of doped amorphous semiconductor material, a second layer of undoped amorphous semiconductor material, a second layer of metallic material, comprising the following successive steps carried out on the substrate:
- (a) a first step involving deposition of a layer of conductive material;
- (b) a second step involving deposition of a first layer of metallic material;
- (c) a third step involving deposition of a first layer of undoped amorphous semiconductor material;
- (d) a fourth step involving deposition of a layer of doped amorphous semiconductor material;
- (e) a fifth step involving deposition of a second layer of undoped amorphous semiconductor material;
- (f) a sixth step which involves etching of at least one control electrode in the previously deposited layers;
- (g) a seventh step involving deposition of a layer of metallic material;
- (h) an eighth step involving deposition of a layer of metallic material;
- (i) a ninth step which involves etching of a control column in the layer of metallic material and the control electrode without attacking the layer of conductive material.
- 5. A method of fabrication of a control element according to claim 4, wherein the ninth step which involves etching of a control column does not attack the first layer of metallic material.
- 6. A method of fabrication according to claim 1, wherein the step which involves etching of a control column is such that one column is coupled with a plurality of control electrodes.
- 7. A method of fabrication according to claim 1, wherein the step which involves etching of a control column is such that one control column is coupled with each control electrode at a number of different points.
Priority Claims (1)
Number |
Date |
Country |
Kind |
85 06964 |
May 1985 |
FRX |
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Parent Case Info
This application is a continuation of application Ser. No. 859,837, filed on May 5, 1986, now abandoned.
US Referenced Citations (13)
Foreign Referenced Citations (7)
Number |
Date |
Country |
0070598 |
Jan 1983 |
EPX |
0073705 |
Sep 1983 |
EPX |
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Jun 1983 |
FRX |
2548450 |
Jan 1985 |
FRX |
0211787 |
Dec 1982 |
JPX |
0177322 |
Sep 1985 |
JPX |
2146827 |
Jun 1985 |
GBX |
Non-Patent Literature Citations (1)
Entry |
Applied Physics Letters, vol. 44, No. 2, Jan. 1984, pp. 205-206, American Institute of Physics, New York; N. Szydlo et al.: "New Amorphous Silicon Nonlinear Element for Liquid Crystal Display Addressing". |
Continuations (1)
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Number |
Date |
Country |
Parent |
859837 |
May 1986 |
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